CA2938155A1 - Ion sensor based on differential measurement and manufacturing method - Google Patents

Ion sensor based on differential measurement and manufacturing method Download PDF

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Publication number
CA2938155A1
CA2938155A1 CA2938155A CA2938155A CA2938155A1 CA 2938155 A1 CA2938155 A1 CA 2938155A1 CA 2938155 A CA2938155 A CA 2938155A CA 2938155 A CA2938155 A CA 2938155A CA 2938155 A1 CA2938155 A1 CA 2938155A1
Authority
CA
Canada
Prior art keywords
ion
field effect
effect transistor
sensor based
differential measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2938155A
Other languages
English (en)
French (fr)
Inventor
Antoni Baldi Coll
Carlos Dominguez Horna
Cecilia Jimenez Jorquera
Cesar Fernandez Sanchez
Andreu Llobera Adan
Angel Merlos Domingo
Alfredo CADARSO BUSTO
Isabel BURDALLO BAUTISTA
Ferran Vera Gras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Publication of CA2938155A1 publication Critical patent/CA2938155A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16235Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
CA2938155A 2014-02-11 2015-01-29 Ion sensor based on differential measurement and manufacturing method Abandoned CA2938155A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ESP201430180 2014-02-11
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (1)

Publication Number Publication Date
CA2938155A1 true CA2938155A1 (en) 2015-08-20

Family

ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2938155A Abandoned CA2938155A1 (en) 2014-02-11 2015-01-29 Ion sensor based on differential measurement and manufacturing method

Country Status (9)

Country Link
US (3) US10067085B2 (enExample)
EP (1) EP3106865B1 (enExample)
JP (1) JP2017505443A (enExample)
KR (1) KR20160119096A (enExample)
CN (1) CN106104265A (enExample)
CA (1) CA2938155A1 (enExample)
ES (2) ES2542927R1 (enExample)
MX (1) MX2016010017A (enExample)
WO (1) WO2015121516A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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ES2542927R1 (es) 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
WO2018210803A1 (en) * 2017-05-15 2018-11-22 Analog Devices Global Unlimited Company Integrated ion sensing apparatus and methods
WO2019093907A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
WO2021146105A1 (en) * 2020-01-13 2021-07-22 Beckman Coulter, Inc. Solid state ion selective electrodes
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
EP0155725A1 (en) 1984-02-27 1985-09-25 Sentron v.o.f. Ion concentration measurement system that employs measuring and reference field effect transistor electrodes sensitive to the same ion
JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
TW533593B (en) * 2002-05-20 2003-05-21 Univ Nat Yunlin Sci & Tech Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof
GB2416210B (en) * 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP4731544B2 (ja) * 2007-12-17 2011-07-27 株式会社日立製作所 生体分子検出装置及びそれを用いた生体分子検出方法
WO2009119319A1 (ja) * 2008-03-27 2009-10-01 株式会社堀場製作所 イオンセンサ
WO2010017192A1 (en) * 2008-08-05 2010-02-11 Ph Diagnostics Inc. Apparatus, method and system for determining a physiological condition within a mammal
US9518953B2 (en) * 2011-09-07 2016-12-13 Technion Research And Development Foundation Ltd. Ion sensitive detector
EP2570803B1 (en) * 2011-09-16 2018-03-21 Nxp B.V. pH sensor and manufacturing method
US20130158378A1 (en) * 2011-09-22 2013-06-20 The Ohio State University Ionic barrier for floating gate in vivo biosensors
US20130084214A1 (en) * 2011-09-30 2013-04-04 Frederick Quincy Johnson Ion-Selective Ion Concentration Meter
US9304103B2 (en) * 2011-09-30 2016-04-05 Sentient Technologies, Inc. Self-calibrating ion meter
US9459234B2 (en) * 2011-10-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) CMOS compatible BioFET
US9689835B2 (en) * 2011-10-31 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Amplified dual-gate bio field effect transistor
US8963216B2 (en) * 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
EP2986966B1 (en) * 2013-04-18 2023-06-07 Solenis Technologies Cayman, L.P. Device and method for detecting and analyzing deposits
KR101540254B1 (ko) * 2013-06-24 2015-07-30 경북대학교 산학협력단 당을 감지하는 화학감각수용체를 발현하는 세포를 이용한 바이오 센서 및 이를 포함하는 알츠하이머 진단 기기
US9978689B2 (en) * 2013-12-18 2018-05-22 Nxp Usa, Inc. Ion sensitive field effect transistors with protection diodes and methods of their fabrication
ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
US9733210B2 (en) * 2014-12-31 2017-08-15 International Business Machines Corporation Nanofluid sensor with real-time spatial sensing

Also Published As

Publication number Publication date
US20200025710A1 (en) 2020-01-23
CN106104265A (zh) 2016-11-09
ES2818111T3 (es) 2021-04-09
US10067085B2 (en) 2018-09-04
US10436743B2 (en) 2019-10-08
ES2542927A2 (es) 2015-08-12
EP3106865B1 (en) 2020-06-10
KR20160119096A (ko) 2016-10-12
US20190017958A1 (en) 2019-01-17
EP3106865A1 (en) 2016-12-21
US20170010237A1 (en) 2017-01-12
WO2015121516A1 (es) 2015-08-20
MX2016010017A (es) 2016-10-07
ES2542927R1 (es) 2015-09-09
JP2017505443A (ja) 2017-02-16
US11029278B2 (en) 2021-06-08

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Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20210831

FZDE Discontinued

Effective date: 20210831