JP2017502484A - 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用 - Google Patents

検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用 Download PDF

Info

Publication number
JP2017502484A
JP2017502484A JP2016546884A JP2016546884A JP2017502484A JP 2017502484 A JP2017502484 A JP 2017502484A JP 2016546884 A JP2016546884 A JP 2016546884A JP 2016546884 A JP2016546884 A JP 2016546884A JP 2017502484 A JP2017502484 A JP 2017502484A
Authority
JP
Japan
Prior art keywords
electron beam
sample
electron
plasma
plasma probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016546884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017502484A5 (enExample
Inventor
サレハ，ネダル
トエット，ダニエル
スターリン，エンリケ
ローウィンジャー，ローネン
クリシュナスワミ，スリラム
グレイザー，アリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orbotech Ltd
Photon Dynamics Inc
Original Assignee
Orbotech Ltd
Photon Dynamics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orbotech Ltd, Photon Dynamics Inc filed Critical Orbotech Ltd
Publication of JP2017502484A publication Critical patent/JP2017502484A/ja
Publication of JP2017502484A5 publication Critical patent/JP2017502484A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • G01N27/68—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using electric discharge to ionise a gas
    • G01N27/70—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using electric discharge to ionise a gas and measuring current or voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J33/00—Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/07—Non contact-making probes
    • G01R1/072—Non contact-making probes containing ionised gas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2825—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere in household appliances or professional audio/video equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H01J2237/164—Particle-permeable windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2240/00—Testing
    • H05H2240/10—Testing at atmospheric pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Multimedia (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2016546884A 2013-10-03 2014-10-02 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用 Pending JP2017502484A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361886625P 2013-10-03 2013-10-03
US61/886,625 2013-10-03
PCT/US2014/058899 WO2015051175A2 (en) 2013-10-03 2014-10-02 Application of electron-beam induced plasma probes to inspection, test, debug and surface modifications

Publications (2)

Publication Number Publication Date
JP2017502484A true JP2017502484A (ja) 2017-01-19
JP2017502484A5 JP2017502484A5 (enExample) 2017-11-09

Family

ID=52779296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016546884A Pending JP2017502484A (ja) 2013-10-03 2014-10-02 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用

Country Status (6)

Country Link
US (1) US20160299103A1 (enExample)
JP (1) JP2017502484A (enExample)
KR (1) KR20160066028A (enExample)
CN (1) CN105793716A (enExample)
TW (1) TW201530602A (enExample)
WO (1) WO2015051175A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013012616A2 (en) 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
US10590919B2 (en) * 2013-11-04 2020-03-17 Aerojet Rocketdyne, Inc. Ground based systems and methods for testing reaction thrusters
CN104962863B (zh) * 2015-05-06 2018-05-25 中国科学院广州能源研究所 一种原子级真空气态3d打印系统
WO2016205719A1 (en) * 2015-06-19 2016-12-22 Applied Materials, Inc. Additive manufacturing with electrostatic compaction
WO2017201505A2 (en) 2016-05-19 2017-11-23 Plasmotica, LLC Apparatus and method for programmable spatially selective nanoscale surface functionalization, self-flowing micorfluidic analytical chip, and stand alone microfluidic analytical chip device
CN106199392B (zh) * 2016-06-27 2019-02-12 中国科学院深圳先进技术研究院 芯片单粒子效应探测方法及装置
JP7148135B2 (ja) * 2016-06-29 2022-10-05 ティーエーイー テクノロジーズ， インコーポレイテッド 鉱物絶縁された組み合わせられた磁束ループおよびｂドットワイヤ
JP7042071B2 (ja) * 2016-12-20 2022-03-25 エフ・イ－・アイ・カンパニー ｅビーム操作用の局部的に排気された容積を用いる集積回路解析システムおよび方法
WO2019025188A1 (en) 2017-08-02 2019-02-07 Asml Netherlands B.V. SYSTEMS AND METHODS FOR INFLATION OF CHARGED PARTICLES FOR ENHANCEMENT OF A VOLTAGE CONTRAST DEFECT SIGNAL
IL273418B2 (en) 2017-09-26 2026-01-01 Asml Netherlands Bv Identification of inherent properties by scattered particles
US11179808B1 (en) 2018-07-11 2021-11-23 Rosemount Aerospace Inc. System and method of additive manufacturing
KR102697291B1 (ko) * 2018-12-31 2024-08-22 에이에스엠엘 네델란즈 비.브이. 멀티 빔을 갖는 인-렌즈 웨이퍼 사전-충전 및 검사
US11491575B2 (en) 2019-04-16 2022-11-08 Arcam Ab Electron beam melting additive manufacturing machine with dynamic energy adjustment
CN113363197B (zh) * 2019-10-30 2023-11-03 长江存储科技有限责任公司 用于校准粒子束的垂直度的方法以及应用于半导体制造工艺的系统
WO2021083581A1 (en) * 2019-10-31 2021-05-06 Carl Zeiss Smt Gmbh Fib-sem 3d tomography for measuring shape deviations of high aspect ratio structures
KR102411068B1 (ko) * 2020-08-14 2022-06-22 주식회사 아이에스시 피검사 디바이스의 온도 조절을 위한 온도 조절 장치
KR20230052900A (ko) 2020-08-21 2023-04-20 에이에스엠엘 네델란즈 비.브이. 진공 시스템 밀봉용 인쇄 회로 기판
US11664189B2 (en) * 2020-10-04 2023-05-30 Borries Pte. Ltd. Apparatus of charged-particle beam such as scanning electron microscope comprising plasma generator, and method thereof
DE102020216518B4 (de) * 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas
CN114678246B (zh) * 2020-12-24 2025-10-14 中微半导体设备(上海)股份有限公司 用于电容耦合等离子处理器阻抗特性测量的测量装置和方法
CN114256058B (zh) * 2021-07-08 2025-09-09 宁波伯锐锶电子束科技有限公司 一种亲水性基片制作方法及装置
CN117740892B (zh) * 2022-09-14 2026-04-17 中国科学院宁波材料技术与工程研究所 在静水压力下原位测试样品微区电化学性能的装置
US12676280B2 (en) * 2023-06-12 2026-07-07 Airsem Technologies Ltd. Charged particle beam devices and membrane assemblies useful therein

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008292372A (ja) * 2007-05-25 2008-12-04 Oht Inc 検査支援システムを搭載する回路検査装置とその検査支援方法
WO2013012616A2 (en) * 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902741A (en) * 1986-04-18 1999-05-11 Advanced Tissue Sciences, Inc. Three-dimensional cartilage cultures
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6952108B2 (en) * 2003-09-16 2005-10-04 Micron Technology, Inc. Methods for fabricating plasma probes
EP1798751A1 (en) * 2005-12-13 2007-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Protecting aperture for charged particle emitter
US20100068408A1 (en) * 2008-09-16 2010-03-18 Omniprobe, Inc. Methods for electron-beam induced deposition of material inside energetic-beam microscopes
US20130245505A1 (en) * 2011-04-08 2013-09-19 The Board of Trustees of the Leland Stanford Junior University Noninvasive Ultrasound-Based Retinal Stimulator: Ultrasonic Eye
US8716673B2 (en) * 2011-11-29 2014-05-06 Fei Company Inductively coupled plasma source as an electron beam source for spectroscopic analysis

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008292372A (ja) * 2007-05-25 2008-12-04 Oht Inc 検査支援システムを搭載する回路検査装置とその検査支援方法
WO2013012616A2 (en) * 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
JP2014521932A (ja) * 2011-07-15 2014-08-28 オーボテック リミテッド 電子ビーム誘導プラズマプローブを用いた電子装置の電気検査

Also Published As

Publication number Publication date
TW201530602A (zh) 2015-08-01
KR20160066028A (ko) 2016-06-09
US20160299103A1 (en) 2016-10-13
CN105793716A (zh) 2016-07-20
WO2015051175A2 (en) 2015-04-09
WO2015051175A3 (en) 2015-11-19

Similar Documents

Publication Publication Date Title
US20160299103A1 (en) Application of electron-beam induced plasma probes to inspection, test, debug and surface modifications
JP2017535914A (ja) 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマ（ｅＢＩＰ）の適用
JP4657394B2 (ja) ウエハにおける欠陥を検知する方法及び装置
JP6429780B2 (ja) 多次元構造体アクセス
US7602197B2 (en) High current electron beam inspection
CN116195025A (zh) 用于脉冲电压对比度检测和充电动态捕获的系统和方法
US11709199B2 (en) Evaluation apparatus for semiconductor device
KR20140057243A (ko) 전자-빔 유도형 플라스마 프로브를 이용하는 전자 소자의 전기적 검사
KR101682521B1 (ko) 시료 관찰 장치, 커버 어셈블리 및 시료 관찰 방법
US6774363B2 (en) Method of preventing charging, and apparatus for charged particle beam using the same
KR102865964B1 (ko) 신호 전자 검출을 위한 시스템 및 방법
JP2001185593A (ja) 半導体デバイスの評価装置およびその方法並びに半導体デバイスの製造方法
US7525325B1 (en) System and method for floating-substrate passive voltage contrast
US6297503B1 (en) Method of detecting semiconductor defects
JP2008004569A (ja) 帯電中和制御方法、及びそれを用いた荷電粒子線装置
CN119384636A (zh) 通过电压对比成像进行缺陷检测的系统和方法
JP3300545B2 (ja) 半導体材料の電気特性評価方法
US7205539B1 (en) Sample charging control in charged-particle systems
JP7304624B2 (ja) 電子顕微鏡
Zhang THE EDFAS FA TECHNOLOGY ROADMAP DIE-LEVEL POST-ISOLATION DOMAIN TECHNICAL SUMMARY.
JP2003303867A (ja) コンタクトホールの検査方法およびその結果に基づいた不良コンタクトホールの補修加工方法
JP7822335B2 (ja) 荷電粒子線装置及び電気抵抗測定方法
JP2004170395A (ja) 荷電粒子線装置
US20210048450A1 (en) Method for Manufacturing Semiconductor Device
TW202534418A (zh) 帶電粒子束系統中之劑量控制電壓對比檢測及其方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20160607

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7426

Effective date: 20160607

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170929

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170929

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180816

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180828

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190319