CN105793716A - 应用电子束诱发等离子体探针以进行检验、测试、除错及表面修改 - Google Patents

应用电子束诱发等离子体探针以进行检验、测试、除错及表面修改 Download PDF

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Publication number
CN105793716A
CN105793716A CN201480054629.2A CN201480054629A CN105793716A CN 105793716 A CN105793716 A CN 105793716A CN 201480054629 A CN201480054629 A CN 201480054629A CN 105793716 A CN105793716 A CN 105793716A
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CN
China
Prior art keywords
electron beam
sample
plasma
electron
vacuum enclosure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480054629.2A
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English (en)
Chinese (zh)
Inventor
内达尔·沙利
丹尼尔·托特
安利奎·史特林
罗南·洛温格
斯里蓝·奎许那瓦米
艾利·葛雷瑟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Feiteng Power Co
Orbotech Ltd
Original Assignee
Feiteng Power Co
Orbotech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Feiteng Power Co, Orbotech Ltd filed Critical Feiteng Power Co
Publication of CN105793716A publication Critical patent/CN105793716A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J33/00—Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • G01N27/68—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using electric discharge to ionise a gas
    • G01N27/70—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using electric discharge to ionise a gas and measuring current or voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/07—Non contact-making probes
    • G01R1/072—Non contact-making probes containing ionised gas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2825—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere in household appliances or professional audio/video equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H01J2237/164—Particle-permeable windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2240/00—Testing
    • H05H2240/10—Testing at atmospheric pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Electrochemistry (AREA)
  • Multimedia (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Pathology (AREA)
  • Plasma Technology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Drying Of Semiconductors (AREA)
CN201480054629.2A 2013-10-03 2014-10-02 应用电子束诱发等离子体探针以进行检验、测试、除错及表面修改 Pending CN105793716A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361886625P 2013-10-03 2013-10-03
US61/886,625 2013-10-03
PCT/US2014/058899 WO2015051175A2 (en) 2013-10-03 2014-10-02 Application of electron-beam induced plasma probes to inspection, test, debug and surface modifications

Publications (1)

Publication Number Publication Date
CN105793716A true CN105793716A (zh) 2016-07-20

Family

ID=52779296

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480054629.2A Pending CN105793716A (zh) 2013-10-03 2014-10-02 应用电子束诱发等离子体探针以进行检验、测试、除错及表面修改

Country Status (6)

Country Link
US (1) US20160299103A1 (enExample)
JP (1) JP2017502484A (enExample)
KR (1) KR20160066028A (enExample)
CN (1) CN105793716A (enExample)
TW (1) TW201530602A (enExample)
WO (1) WO2015051175A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN108226737A (zh) * 2016-12-20 2018-06-29 Fei公司 具有用于电子束操作的局部抽空容积的集成电路分析系统和方法
CN114256058A (zh) * 2021-07-08 2022-03-29 聚束科技（北京）有限公司 一种亲水性基片制作方法及装置

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WO2013012616A2 (en) 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
WO2015065518A1 (en) * 2013-11-04 2015-05-07 Aerojet Rocketdyne, Inc. Ground based systems and methods for testing reaction thrusters
CN104962863B (zh) * 2015-05-06 2018-05-25 中国科学院广州能源研究所 一种原子级真空气态3d打印系统
WO2016205719A1 (en) * 2015-06-19 2016-12-22 Applied Materials, Inc. Additive manufacturing with electrostatic compaction
US10832895B2 (en) 2016-05-19 2020-11-10 Plasmotica, LLC Stand alone microfluidic analytical chip device
CN106199392B (zh) * 2016-06-27 2019-02-12 中国科学院深圳先进技术研究院 芯片单粒子效应探测方法及装置
KR102385761B1 (ko) * 2016-06-29 2022-04-11 티에이이 테크놀로지스, 인크. 미네랄로 절연되는, 결합된 선속 루프와 b-도트 와이어
KR20240029107A (ko) * 2017-08-02 2024-03-05 에이에스엠엘 네델란즈 비.브이. 전압 대비 결함 신호를 향상시키는 하전 입자 플러딩을 위한 시스템 및 방법
IL273418B1 (en) * 2017-09-26 2025-09-01 Asml Netherlands Bv Identification of inherent properties by scattered particles
US11179808B1 (en) 2018-07-11 2021-11-23 Rosemount Aerospace Inc. System and method of additive manufacturing
JP7231738B2 (ja) * 2018-12-31 2023-03-01 エーエスエムエル ネザーランズ ビー．ブイ． 複数ビームを用いたインレンズウェーハプリチャージ及び検査
US11491575B2 (en) 2019-04-16 2022-11-08 Arcam Ab Electron beam melting additive manufacturing machine with dynamic energy adjustment
CN110945641B (zh) * 2019-10-30 2021-06-08 长江存储科技有限责任公司 用于校准粒子束的垂直度的方法以及应用于半导体制造工艺的系统
CN114599934B (zh) * 2019-10-31 2024-10-11 卡尔蔡司Smt有限责任公司 用于测量har结构的形状偏差的fib-sem 3d断层成像术
KR102411068B1 (ko) * 2020-08-14 2022-06-22 주식회사 아이에스시 피검사 디바이스의 온도 조절을 위한 온도 조절 장치
EP4200890A1 (en) 2020-08-21 2023-06-28 ASML Netherlands B.V. Detector module comprising printed circuit board for sealing vacuum chamber
US11664189B2 (en) * 2020-10-04 2023-05-30 Borries Pte. Ltd. Apparatus of charged-particle beam such as scanning electron microscope comprising plasma generator, and method thereof
DE102020216518B4 (de) * 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas
CN114678246B (zh) * 2020-12-24 2025-10-14 中微半导体设备(上海)股份有限公司 用于电容耦合等离子处理器阻抗特性测量的测量装置和方法

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US20050057268A1 (en) * 2003-09-16 2005-03-17 Blalock Guy T. Plasma probe, methods for fabricating the same, and methods for using the same
US20070145303A1 (en) * 2005-12-13 2007-06-28 Pavel Adamec Protecting Aperture for Charged Particle Emitter
US20080302964A1 (en) * 1996-03-05 2008-12-11 Hiroyuki Shinada Method and apparatus for inspecting integrated circuit pattern
US20100068408A1 (en) * 2008-09-16 2010-03-18 Omniprobe, Inc. Methods for electron-beam induced deposition of material inside energetic-beam microscopes
WO2013012616A2 (en) * 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
CN103137418A (zh) * 2011-11-29 2013-06-05 Fei公司 作为用于光谱分析的电子束源的感应耦合等离子体源

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JP2008292372A (ja) * 2007-05-25 2008-12-04 Oht Inc 検査支援システムを搭載する回路検査装置とその検査支援方法
US20130245505A1 (en) * 2011-04-08 2013-09-19 The Board of Trustees of the Leland Stanford Junior University Noninvasive Ultrasound-Based Retinal Stimulator: Ultrasonic Eye

Patent Citations (6)

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US20080302964A1 (en) * 1996-03-05 2008-12-11 Hiroyuki Shinada Method and apparatus for inspecting integrated circuit pattern
US20050057268A1 (en) * 2003-09-16 2005-03-17 Blalock Guy T. Plasma probe, methods for fabricating the same, and methods for using the same
US20070145303A1 (en) * 2005-12-13 2007-06-28 Pavel Adamec Protecting Aperture for Charged Particle Emitter
US20100068408A1 (en) * 2008-09-16 2010-03-18 Omniprobe, Inc. Methods for electron-beam induced deposition of material inside energetic-beam microscopes
WO2013012616A2 (en) * 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
CN103137418A (zh) * 2011-11-29 2013-06-05 Fei公司 作为用于光谱分析的电子束源的感应耦合等离子体源

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108226737A (zh) * 2016-12-20 2018-06-29 Fei公司 具有用于电子束操作的局部抽空容积的集成电路分析系统和方法
TWI746740B (zh) * 2016-12-20 2021-11-21 美商Fei公司 用於積體電路(ic)檢查之方法及裝置
CN108226737B (zh) * 2016-12-20 2022-01-11 Fei公司 具有用于电子束操作的局部抽空容积的集成电路分析系统和方法
CN114256058A (zh) * 2021-07-08 2022-03-29 聚束科技（北京）有限公司 一种亲水性基片制作方法及装置
CN114256058B (zh) * 2021-07-08 2025-09-09 宁波伯锐锶电子束科技有限公司 一种亲水性基片制作方法及装置

Also Published As

Publication number Publication date
TW201530602A (zh) 2015-08-01
US20160299103A1 (en) 2016-10-13
KR20160066028A (ko) 2016-06-09
JP2017502484A (ja) 2017-01-19
WO2015051175A3 (en) 2015-11-19
WO2015051175A2 (en) 2015-04-09

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