JP2017218341A - ハニカム構造体 - Google Patents
ハニカム構造体 Download PDFInfo
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- JP2017218341A JP2017218341A JP2016112740A JP2016112740A JP2017218341A JP 2017218341 A JP2017218341 A JP 2017218341A JP 2016112740 A JP2016112740 A JP 2016112740A JP 2016112740 A JP2016112740 A JP 2016112740A JP 2017218341 A JP2017218341 A JP 2017218341A
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- honeycomb structure
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- 239000002245 particle Substances 0.000 claims abstract description 66
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 238000005192 partition Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 10
- 238000012856 packing Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 238000012545 processing Methods 0.000 description 16
- 238000004891 communication Methods 0.000 description 14
- 238000005245 sintering Methods 0.000 description 11
- 238000010306 acid treatment Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005238 degreasing Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000005470 impregnation Methods 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000013001 point bending Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
たとえば、上記特許文献1に開示されたハニカム構造体の場合、セラミック粒子同士は、焼結によって結合された構成となっている。これに対し、上記構成では、骨格部分におけるセラミック粒子は、充填された充填部材によって形状が保持され、セラミック粒子同士の結合は抑制されている。こうした構造を骨格部分において採用しているため、ひずみに対する耐性を向上させることができる。すなわちヤング率を高くすることができる。
図1に示すように、ハニカム構造体10は、筒状の周壁11と、周壁11の内部を周壁11の軸方向に延びる複数のセルに区画する断面ハニカム形状の区画壁12と備えている。周壁11の両端部には、径方向外方に突出する環状のリブ13がそれぞれ設けられている。
たとえば、ハニカム構造体内に大きな温度差がつくと、断面ハニカム形状の区画壁にひずみが生じる。このとき、セラミック粒子のいずれかに亀裂が生じ、この亀裂が伸展することが考えられる。焼結ハニカム構造体の場合、ネックを介してセラミック粒子同士が結合されて相応の大きさに形成されていることがあり、それが故に、亀裂が伸展しやすく、ひずみが大きくなるのではないかと考えられる。これに対し、本実施形態のハニカム構造体の場合、セラミック粒子は、互いに結合されることが抑制されている。そのため、仮に、いずれかのセラミック粒子に亀裂が生じたとしても、セラミック粒子がより小さく構成されていることから、その亀裂が伸展されにくく、ひずみが大きくなるのを抑制していると考えられる。こうしたことから、本実施形態のハニカム構造体は、焼結ハニカム構造体と比較して、ヤング率が高く、変形しにくい性質を有し、ひずみに対する耐性を向上させることができる。また、セラミック粒子間の隙間に金属ケイ素が充填されていることにより、焼結ハニカム構造体と同程度の強度を確保できている。
ハニカム構造体10の成形に用いる原料として、公知のハニカム構造体10に用いられるセラミック粒子と、有機バインダーと、分散媒とを含有する粘土状の混合物を調製する。図8に示すように、成形工程では、公知のハニカム構造体10に用いられる混合物と同様の混合物を用いて、筒状の周壁11と、周壁11の内部を周壁11の軸方向に延びる複数のセルSに区画する断面ハニカム形状の区画壁12とを備える成形体10Aを成形する。この成形体10Aは、環状のリブ13が省略された形状であるとともに、全てのセルSについて、その両端が開放された状態となっている。成形体10Aは、例えば、押し出し成形により成形することができる。得られた成形体10Aに対して、成形体10Aを乾燥させる乾燥処理を行う。
加工工程は、成形体10Aの外形状をハニカム構造体10の外形状と略同一形状に加工した加工成形体10Bを得る工程である。加工工程においては、成形体10Aにリブ13を形成する第1加工、成形体10Aに第1連通部14a及び第2連通部14bを形成する第2加工、及び成形体10Aにおける一部のセルSの両端部を封止する第3加工を行う。
(脱脂工程)
脱脂工程は、加工成形体10Bを加熱することによって、加工成形体10Bに含まれる有機バインダーを燃焼させ、焼失させることにより、加工成形体10Bから有機バインダーが除去された脱脂体10Cを得る工程である。図12に示すように、脱脂工程を経ることにより、加工成形体10Bから有機バインダーが除去されて、セラミック粒子間に隙間を有する脱脂体10Cが得られる。
含浸工程は、脱脂体10Cの各壁の内部に金属ケイ素を含浸させる工程である。含浸工程においては、脱脂体10Cに対して金属ケイ素の塊を接触させた状態として、金属ケイ素の融点以上(例えば、1450℃以上)に加熱する。これにより、図13に示すように、溶融した金属ケイ素が毛細管現象によって、脱脂体10Cの各壁を構成するセラミック粒子間の隙間へ入り込み、同隙間に金属ケイ素が含浸される。
ここで、本実施形態においては、脱脂工程以降の工程において特別な温度管理を行っている。すなわち、脱脂工程以降の工程においては、成形工程に用いた混合物に含まれるセラミック粒子の焼結温度未満の温度下にて実施し、加工成形体10B、脱脂体10Cを上記焼結温度以上の温度下に曝さないようにしている。したがって、脱脂工程においては、有機バインダーが焼失可能な温度以上、かつ上記焼結温度未満の温度で加熱を行う。同様に、含浸工程においては、金属ケイ素の融点以上、かつ上記焼結温度未満の温度で加熱を行う。
・ハニカム構造体の外形状は円柱に限定されず、楕円筒状や角筒状の外形状としてもよい。また、本実施形態では、周壁と区画壁とを同一の材料によって構成するものとしたが、周壁と区画壁とを異なる材料から構成するものとしてもよい。たとえば、区画壁の外周に被覆層を形成することにより、被覆層を周壁としてもよい。
・ハニカム構造体は、区画壁によって区画された複数のセルが長手方向に並設されている柱状のハニカム部材が、接合層を介して複数個結束されたものであってもよい。
(イ)セラミック粒子の結合部率が5%以下であるハニカム構造体。
(実施例)
まず、下記組成の混合物を調製した。
平均粒子径0.5μmの炭化ケイ素の粒子(小粒子):23.6質量部
メチルセルロース(有機バインダー):5.4質量部
グリセリン(潤滑剤):1.1質量部
ポリオキシアルキレン系化合物(可塑剤):3.2質量部
水(分散媒):11.5質量部
この混合物を用いて、直径35mm、長さ100mm、周壁の厚さ0.3mm、区画壁の厚さ0.1mm、セル幅0.94mmのハニカム構造を有する円柱状の成形体を成形した。次に、成形体を450℃で5時間加熱することにより、有機バインダーが除去された脱脂体を得た。その後、脱脂体の上に金属ケイ素の板材20gを載置した状態として、真空下、1550℃で7時間、加熱することにより、金属ケイ素を含浸させて、実施例1のハニカム構造体を得た。また、上記含浸を、アルゴン雰囲気下、1700℃で7時間、加熱することにより金属ケイ素を含浸させて、実施例2のハニカム構造体を得た。なお、図4、5に示す顕微鏡写真は、実施例1、2のハニカム構造体を撮影したものである。
実施例と同様にして成形体及び脱脂体を得た。脱脂体をアルゴン雰囲気下、2200℃で3時間、加熱することにより焼成体を得た。そして、焼成体の上に金属ケイ素の板材20gを載置した状態として、真空下、1550℃で7時間、加熱することにより、金属ケイ素を含浸させて、比較例1のハニカム構造体を得た。なお、図6に示す顕微鏡写真は、比較例のハニカム構造体を撮影したものである。
実施例1〜3及び比較例1のハニカム構造体の曲げ強度及びヤング率を測定した。それらの結果を表1に示す。
3点曲げ強度測定用サンプルとして、実施例および比較例のハニカム構造体から、周壁及び封止部を除く2セル×4セル×40mmの大きさの基材を10本切り出した。そして、3点曲げ強度測定用サンプルの主面(広い方の面)に対して垂直な方向に荷重を印加し、破壊荷重(サンプルが破壊した荷重)を測定した。10本の3点曲げ強度測定用サンプルについて破壊荷重を測定し、その平均値を曲げ強度とした。3点曲げ強度試験は、JIS R 1601を参考に、インストロン5582を用い、スパン間距離:30mm、スピード1mm/minで行った。
Claims (4)
- 筒状の周壁と、前記周壁の内部を前記周壁の軸方向に延びる複数のセルに区画する断面ハニカム形状の区画壁とを備えるハニカム構造体であって、
前記区画壁は、複数のセラミック粒子が前記区画壁に相当する形状に配置されてなる骨格部分と、前記骨格部分におけるセラミック粒子間の隙間に充填された金属ケイ素からなる充填部分とから構成されており、
前記骨格部分は、前記充填部分によって前記区画壁に相当する形状に保持されていることを特徴とするハニカム構造体。 - 前記セラミック粒子は未焼結であることを特徴とする請求項1に記載のハニカム構造体。
- 前記セラミック粒子と前記金属ケイ素の体積比は、60:40〜40:60であることを特徴とする請求項1又は2に記載のハニカム構造体。
- 前記セラミック粒子が炭化ケイ素粒子であることを特徴とする請求項1〜3のいずれか1項に記載のハニカム構造体。
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