JP2017204528A - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP2017204528A
JP2017204528A JP2016094610A JP2016094610A JP2017204528A JP 2017204528 A JP2017204528 A JP 2017204528A JP 2016094610 A JP2016094610 A JP 2016094610A JP 2016094610 A JP2016094610 A JP 2016094610A JP 2017204528 A JP2017204528 A JP 2017204528A
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JP
Japan
Prior art keywords
diffusion layer
photodiode
distance
gate electrode
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2016094610A
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English (en)
Japanese (ja)
Other versions
JP2017204528A5 (enExample
Inventor
和伸 桑澤
Kazunobu Kuwasawa
和伸 桑澤
紀元 中村
Norimoto Nakamura
紀元 中村
充生 関澤
Atsuo Sekizawa
充生 関澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2016094610A priority Critical patent/JP2017204528A/ja
Priority to CN201710220833.2A priority patent/CN107359171B/zh
Priority to US15/581,812 priority patent/US10020333B2/en
Publication of JP2017204528A publication Critical patent/JP2017204528A/ja
Publication of JP2017204528A5 publication Critical patent/JP2017204528A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016094610A 2016-05-10 2016-05-10 固体撮像装置 Withdrawn JP2017204528A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016094610A JP2017204528A (ja) 2016-05-10 2016-05-10 固体撮像装置
CN201710220833.2A CN107359171B (zh) 2016-05-10 2017-04-06 固体摄像装置
US15/581,812 US10020333B2 (en) 2016-05-10 2017-04-28 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016094610A JP2017204528A (ja) 2016-05-10 2016-05-10 固体撮像装置

Publications (2)

Publication Number Publication Date
JP2017204528A true JP2017204528A (ja) 2017-11-16
JP2017204528A5 JP2017204528A5 (enExample) 2019-05-30

Family

ID=60271468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016094610A Withdrawn JP2017204528A (ja) 2016-05-10 2016-05-10 固体撮像装置

Country Status (3)

Country Link
US (1) US10020333B2 (enExample)
JP (1) JP2017204528A (enExample)
CN (1) CN107359171B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10797100B2 (en) 2018-09-12 2020-10-06 Kabushiki Kaisha Toshiba Imaging device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073733A (ja) * 2004-09-01 2006-03-16 Canon Inc 固体撮像装置及び固体撮像システム
JP2007180336A (ja) * 2005-12-28 2007-07-12 Fujitsu Ltd 半導体撮像装置
JP2012199760A (ja) * 2011-03-22 2012-10-18 Panasonic Corp 固体撮像装置
JP2013048383A (ja) * 2011-08-29 2013-03-07 Canon Inc 撮像素子及び撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031606B2 (ja) 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
JP3988189B2 (ja) 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
US7964929B2 (en) * 2007-08-23 2011-06-21 Aptina Imaging Corporation Method and apparatus providing imager pixels with shared pixel components
JP4760915B2 (ja) 2009-01-08 2011-08-31 ソニー株式会社 固体撮像素子
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP2011159757A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器
JP5547150B2 (ja) 2011-09-16 2014-07-09 株式会社東芝 固体撮像素子
JP5911767B2 (ja) * 2012-07-13 2016-04-27 株式会社東芝 固体撮像装置
JP5700106B2 (ja) 2013-12-18 2015-04-15 ソニー株式会社 固体撮像装置及び電子機器
JP6254048B2 (ja) * 2014-06-05 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073733A (ja) * 2004-09-01 2006-03-16 Canon Inc 固体撮像装置及び固体撮像システム
JP2007180336A (ja) * 2005-12-28 2007-07-12 Fujitsu Ltd 半導体撮像装置
JP2012199760A (ja) * 2011-03-22 2012-10-18 Panasonic Corp 固体撮像装置
JP2013048383A (ja) * 2011-08-29 2013-03-07 Canon Inc 撮像素子及び撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10797100B2 (en) 2018-09-12 2020-10-06 Kabushiki Kaisha Toshiba Imaging device

Also Published As

Publication number Publication date
CN107359171A (zh) 2017-11-17
US20170330904A1 (en) 2017-11-16
US10020333B2 (en) 2018-07-10
CN107359171B (zh) 2023-04-21

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