CN107359171B - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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Publication number
CN107359171B
CN107359171B CN201710220833.2A CN201710220833A CN107359171B CN 107359171 B CN107359171 B CN 107359171B CN 201710220833 A CN201710220833 A CN 201710220833A CN 107359171 B CN107359171 B CN 107359171B
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Prior art keywords
diffusion layer
photodiode
distance
gate electrode
center
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CN201710220833.2A
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Chinese (zh)
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CN107359171A (zh
Inventor
桑泽和伸
中村纪元
关泽充生
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Seiko Epson Corp
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201710220833.2A 2016-05-10 2017-04-06 固体摄像装置 Active CN107359171B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-094610 2016-05-10
JP2016094610A JP2017204528A (ja) 2016-05-10 2016-05-10 固体撮像装置

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CN107359171A CN107359171A (zh) 2017-11-17
CN107359171B true CN107359171B (zh) 2023-04-21

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CN201710220833.2A Active CN107359171B (zh) 2016-05-10 2017-04-06 固体摄像装置

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US (1) US10020333B2 (enExample)
JP (1) JP2017204528A (enExample)
CN (1) CN107359171B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7003018B2 (ja) * 2018-09-12 2022-01-20 株式会社東芝 撮像装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1992298A (zh) * 2005-12-28 2007-07-04 富士通株式会社 半导体成像器件
CN102157536A (zh) * 2010-01-28 2011-08-17 索尼公司 固态成像器件和电子装置
CN102196198A (zh) * 2010-01-29 2011-09-21 索尼公司 固体摄像器件、其制造方法和驱动方法、以及电子装置
JP2012199760A (ja) * 2011-03-22 2012-10-18 Panasonic Corp 固体撮像装置
CN103545326A (zh) * 2012-07-13 2014-01-29 株式会社东芝 固体拍摄装置
CN105321969A (zh) * 2014-06-05 2016-02-10 瑞萨电子株式会社 半导体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031606B2 (ja) 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
JP3988189B2 (ja) 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
JP4971586B2 (ja) * 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
US7964929B2 (en) * 2007-08-23 2011-06-21 Aptina Imaging Corporation Method and apparatus providing imager pixels with shared pixel components
JP4760915B2 (ja) 2009-01-08 2011-08-31 ソニー株式会社 固体撮像素子
JP5885431B2 (ja) * 2011-08-29 2016-03-15 キヤノン株式会社 撮像素子及び撮像装置
JP5547150B2 (ja) 2011-09-16 2014-07-09 株式会社東芝 固体撮像素子
JP5700106B2 (ja) 2013-12-18 2015-04-15 ソニー株式会社 固体撮像装置及び電子機器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1992298A (zh) * 2005-12-28 2007-07-04 富士通株式会社 半导体成像器件
CN102157536A (zh) * 2010-01-28 2011-08-17 索尼公司 固态成像器件和电子装置
CN102196198A (zh) * 2010-01-29 2011-09-21 索尼公司 固体摄像器件、其制造方法和驱动方法、以及电子装置
JP2012199760A (ja) * 2011-03-22 2012-10-18 Panasonic Corp 固体撮像装置
CN103545326A (zh) * 2012-07-13 2014-01-29 株式会社东芝 固体拍摄装置
CN105321969A (zh) * 2014-06-05 2016-02-10 瑞萨电子株式会社 半导体装置

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Publication number Publication date
CN107359171A (zh) 2017-11-17
JP2017204528A (ja) 2017-11-16
US20170330904A1 (en) 2017-11-16
US10020333B2 (en) 2018-07-10

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