JP2017188682A5 - - Google Patents

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Publication number
JP2017188682A5
JP2017188682A5 JP2017073471A JP2017073471A JP2017188682A5 JP 2017188682 A5 JP2017188682 A5 JP 2017188682A5 JP 2017073471 A JP2017073471 A JP 2017073471A JP 2017073471 A JP2017073471 A JP 2017073471A JP 2017188682 A5 JP2017188682 A5 JP 2017188682A5
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JP
Japan
Prior art keywords
nitride semiconductor
group iii
semiconductor layer
junction
polarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017073471A
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English (en)
Japanese (ja)
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JP6820224B2 (ja
JP2017188682A (ja
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Publication date
Priority claimed from US15/094,639 external-priority patent/US9660134B1/en
Application filed filed Critical
Publication of JP2017188682A publication Critical patent/JP2017188682A/ja
Publication of JP2017188682A5 publication Critical patent/JP2017188682A5/ja
Application granted granted Critical
Publication of JP6820224B2 publication Critical patent/JP6820224B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2017073471A 2016-04-08 2017-04-03 窒化物半導体分極制御デバイス Expired - Fee Related JP6820224B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/094,639 US9660134B1 (en) 2016-04-08 2016-04-08 Nitride semiconductor polarization controlled device
US15/094,639 2016-04-08

Publications (3)

Publication Number Publication Date
JP2017188682A JP2017188682A (ja) 2017-10-12
JP2017188682A5 true JP2017188682A5 (enExample) 2020-05-14
JP6820224B2 JP6820224B2 (ja) 2021-01-27

Family

ID=58530406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017073471A Expired - Fee Related JP6820224B2 (ja) 2016-04-08 2017-04-03 窒化物半導体分極制御デバイス

Country Status (3)

Country Link
US (1) US9660134B1 (enExample)
EP (1) EP3229277B1 (enExample)
JP (1) JP6820224B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817728B (zh) * 2019-03-20 2023-12-01 河北工业大学 一种pin二极管器件结构及其制备方法
US11848371B2 (en) 2020-07-02 2023-12-19 Xerox Corporation Polarization controlled transistor
CN116569654A (zh) 2020-11-16 2023-08-08 创新半导体公司 单片半导体led显示系统及其装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides
JP2006066556A (ja) * 2004-08-25 2006-03-09 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
CN101238561B (zh) * 2005-06-10 2011-08-24 日本电气株式会社 场效应晶体管
US8203376B2 (en) 2006-11-20 2012-06-19 Panasonic Corporation Semiconductor device and method for driving the same
US8338860B2 (en) * 2009-10-30 2012-12-25 Alpha And Omega Semiconductor Incorporated Normally off gallium nitride field effect transistors (FET)
EP2587528B1 (en) * 2010-06-24 2016-03-30 The University Of Sheffield Semiconductor device
US20150279961A1 (en) 2014-03-31 2015-10-01 National Tsing Hua University METHOD OF MANUFACTURING HIGH POWER VERTICAL GaN-PIN DIODE
US9401455B1 (en) * 2015-12-17 2016-07-26 Bolb Inc. Ultraviolet light-emitting device with lateral tunnel junctions for hole injection

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