JP6820224B2 - 窒化物半導体分極制御デバイス - Google Patents

窒化物半導体分極制御デバイス Download PDF

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JP6820224B2
JP6820224B2 JP2017073471A JP2017073471A JP6820224B2 JP 6820224 B2 JP6820224 B2 JP 6820224B2 JP 2017073471 A JP2017073471 A JP 2017073471A JP 2017073471 A JP2017073471 A JP 2017073471A JP 6820224 B2 JP6820224 B2 JP 6820224B2
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nitride semiconductor
layer
group iii
iii nitride
semiconductor layer
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JP2017188682A5 (enExample
JP2017188682A (ja
Inventor
ジョン・イー・ノースラップ
トーマス・ヴンデラー
ジェン・ピン・ルー
ノーブル・エム・ジョンソン
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パロ アルト リサーチ センター インコーポレイテッド
パロ アルト リサーチ センター インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2017073471A 2016-04-08 2017-04-03 窒化物半導体分極制御デバイス Expired - Fee Related JP6820224B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/094,639 US9660134B1 (en) 2016-04-08 2016-04-08 Nitride semiconductor polarization controlled device
US15/094,639 2016-04-08

Publications (3)

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JP2017188682A JP2017188682A (ja) 2017-10-12
JP2017188682A5 JP2017188682A5 (enExample) 2020-05-14
JP6820224B2 true JP6820224B2 (ja) 2021-01-27

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US (1) US9660134B1 (enExample)
EP (1) EP3229277B1 (enExample)
JP (1) JP6820224B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817728B (zh) * 2019-03-20 2023-12-01 河北工业大学 一种pin二极管器件结构及其制备方法
US11848371B2 (en) 2020-07-02 2023-12-19 Xerox Corporation Polarization controlled transistor
CN116569654A (zh) 2020-11-16 2023-08-08 创新半导体公司 单片半导体led显示系统及其装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides
JP2006066556A (ja) * 2004-08-25 2006-03-09 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
CN101238561B (zh) * 2005-06-10 2011-08-24 日本电气株式会社 场效应晶体管
US8203376B2 (en) 2006-11-20 2012-06-19 Panasonic Corporation Semiconductor device and method for driving the same
US8338860B2 (en) * 2009-10-30 2012-12-25 Alpha And Omega Semiconductor Incorporated Normally off gallium nitride field effect transistors (FET)
EP2587528B1 (en) * 2010-06-24 2016-03-30 The University Of Sheffield Semiconductor device
US20150279961A1 (en) 2014-03-31 2015-10-01 National Tsing Hua University METHOD OF MANUFACTURING HIGH POWER VERTICAL GaN-PIN DIODE
US9401455B1 (en) * 2015-12-17 2016-07-26 Bolb Inc. Ultraviolet light-emitting device with lateral tunnel junctions for hole injection

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EP3229277A1 (en) 2017-10-11
US9660134B1 (en) 2017-05-23
JP2017188682A (ja) 2017-10-12
EP3229277B1 (en) 2019-09-25

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