JP2017174486A - オプションコード供与回路及びその供与方法 - Google Patents
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- option code
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0038—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
【解決手段】オプションコード供与回路は複数の抵抗変化型メモリセルとコントローラを含む。コントローラは、抵抗変化型メモリセルの少なくとも一つに強度にフォーミング処理を実行させるために制御信号を供給するかどうかを決定する。コントローラは抵抗変化型メモリセルのビット数を決定するために抵抗変化型メモリセルに読み出し処理を実行し、強度にフォーミング処理された強度にフォーミング処理された抵抗変化型メモリのビット数又は強度にフォーミング処理されてない抵抗変化型メモリセルのビット数によってオプションコードが決定される。
【選択図】図5
Description
111〜11N,211〜21N,311〜31N,411〜41N:抵抗変化型メモリセル
120,220:コントローラ
OPC:オプションコード
230:ビット数センサ
310:XORゲート
431〜43N:冗長ReRAMセル
S510〜S530:オプションコード供与方法のステップ
Claims (12)
- 複数の抵抗変化型メモリセルと、
前記抵抗変化型メモリセルに結合され、前記抵抗変化型メモリセルの少なくとも一つに強度にフォーミング処理を実行するために制御信号を供給するかどうかを決定するコントローラとを備え、
前記コントローラは強度にフォーミング処理された前記抵抗変化型メモリセルのビット数を決定するために前記抵抗変化型メモリセルに読み出し操作を実行し、強度にフォーミング処理された前記抵抗変化型メモリのビット数又は強度にフォーミング処理されてない前記抵抗変化型メモリセルのビット数によってオプションコードが決定される、
オプションコード供与回路。 - 前記強度にフォーミング処理された抵抗変化型メモリセルのビット数が奇数である場合、前記オプションコードは第1の論理値であり、前記強度にフォーミング処理された抵抗変化型メモリセルのビット数が偶数である場合、前記オプションコードは第2の論理値である、請求項1記載のオプションコード供与回路。
- 前記抵抗変化型メモリセルに結合され、前記抵抗変化型メモリセルの複数の格納データをそれぞれ読み出し、前記格納データに基づいてオプションコードを生成するビット数センサを更に備える、請求項1〜2のいずれかに記載のオプションコード供与回路。
- 前記ビット数センサは論理回路であり、前記論理回路が前記複数の格納データを論理演算して前記オプションコードを生成する、請求項3記載のオプションコード供与回路。
- 前記論理回路は、前記複数の格納データをそれぞれ受信する入力端と前記オプションコードを生成する出力端を有するXORゲートを備える、請求項4記載のオプションコード供与回路。
- 前記格納データの各々は対応する抵抗変化型メモリセルの抵抗値に基づいて得られる、請求項1〜5のいずれかに記載のオプションコード供与回路。
- 前記コントローラに結合された、複数の冗長抵抗変化型メモリセルを更に備え、
前記コントローラは前記抵抗変化型メモリセルを無効化し、前記複数の冗長抵抗変化型メモリセルの少なくとも一つをフォーミング処理して前記オプションコードを更新する、請求項1記載のオプションコード供与回路。 - 複数の抵抗変化型メモリセルに強度にフォーミング処理を実行するために制御信号を供給するかどうかを決定するステップと、
前記抵抗変化型メモリセルに読み出し処理を実行して強度にフォーミング処理された前記抵抗変化型メモリセルのビット数を決定するステップと、
強度にフォーミング処理された前記抵抗変化型メモリセルのビット数又は強度にフォーミング処理されてない前記抵抗変化型メモリセルのビット数に従ってオプションコードを生成するステップと、
を備える、オプションコード供与方法。 - 強度にフォーミング処理された前記抵抗変化型メモリセルのビット数に従ってオプションコードを生成するステップは、前記ビット数が奇数である場合、前記オプションコードは第1の論理値であり、前記ビット数が偶数である場合、前記オプションコードは第2の論理値であり、前記第1の論理値は前記第2の論理値と相違する、請求項8記載のオプションコード供与方法。
- 強度にフォーミング処理された前記抵抗変化型メモリセルのビット数に従ってオプションコードを生成するステップは、前記抵抗変化型メモリセルの複数の格納データをそれぞれ読み出すステップ、及び前記格納データに基づいてオプションコードを生成するステップを備える、請求項8〜9のいずれかに記載のオプションコード供与方法。
- 前記格納データに基づいてオプションコードを生成するステップは、前記複数の格納データを論理演算して前記オプションコードを生成するステップを備える、請求項10記載のオプションコード供与方法。
- 複数の冗長抵抗変化型メモリセルを備えるステップ、及び
前記抵抗変化型メモリセルを無効化し、前記複数の冗長抵抗変化型メモリセルの少なくとも一つをフォーミング処理して前記オプションコードを更新するステップ、
を更に備える、請求項8〜11のいずれかに記載のオプションコード供与方法。
Applications Claiming Priority (2)
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US15/077,916 | 2016-03-23 | ||
US15/077,916 US10579290B2 (en) | 2016-03-23 | 2016-03-23 | Option code providing circuit and providing method thereof |
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JP2017174486A true JP2017174486A (ja) | 2017-09-28 |
JP6586398B2 JP6586398B2 (ja) | 2019-10-02 |
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US (1) | US10579290B2 (ja) |
EP (1) | EP3223282B1 (ja) |
JP (1) | JP6586398B2 (ja) |
KR (1) | KR101892110B1 (ja) |
CN (1) | CN107230493B (ja) |
ES (1) | ES2728519T3 (ja) |
TW (1) | TWI597727B (ja) |
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- 2016-06-06 TW TW105117839A patent/TWI597727B/zh active
- 2016-06-23 JP JP2016124233A patent/JP6586398B2/ja active Active
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- 2016-07-28 ES ES16181783T patent/ES2728519T3/es active Active
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KR101892110B1 (ko) | 2018-08-27 |
JP6586398B2 (ja) | 2019-10-02 |
US10579290B2 (en) | 2020-03-03 |
ES2728519T3 (es) | 2019-10-25 |
KR20170110490A (ko) | 2017-10-11 |
TW201735035A (zh) | 2017-10-01 |
CN107230493A (zh) | 2017-10-03 |
EP3223282A1 (en) | 2017-09-27 |
EP3223282B1 (en) | 2019-03-06 |
CN107230493B (zh) | 2021-05-18 |
TWI597727B (zh) | 2017-09-01 |
US20170277465A1 (en) | 2017-09-28 |
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