JP2017172019A5 - - Google Patents

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Publication number
JP2017172019A5
JP2017172019A5 JP2016061509A JP2016061509A JP2017172019A5 JP 2017172019 A5 JP2017172019 A5 JP 2017172019A5 JP 2016061509 A JP2016061509 A JP 2016061509A JP 2016061509 A JP2016061509 A JP 2016061509A JP 2017172019 A5 JP2017172019 A5 JP 2017172019A5
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JP
Japan
Prior art keywords
cylindrical electrode
spacer
shield
processing apparatus
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016061509A
Other languages
English (en)
Japanese (ja)
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JP6629116B2 (ja
JP2017172019A (ja
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Publication date
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Priority claimed from JP2016061509A external-priority patent/JP6629116B2/ja
Priority to JP2016061509A priority Critical patent/JP6629116B2/ja
Priority to KR1020170029543A priority patent/KR101962531B1/ko
Priority to CN201710148321.XA priority patent/CN107230608B/zh
Priority to US15/467,602 priority patent/US20170275761A1/en
Priority to TW106109641A priority patent/TWI634586B/zh
Publication of JP2017172019A publication Critical patent/JP2017172019A/ja
Publication of JP2017172019A5 publication Critical patent/JP2017172019A5/ja
Publication of JP6629116B2 publication Critical patent/JP6629116B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016061509A 2016-03-25 2016-03-25 プラズマ処理装置 Active JP6629116B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016061509A JP6629116B2 (ja) 2016-03-25 2016-03-25 プラズマ処理装置
KR1020170029543A KR101962531B1 (ko) 2016-03-25 2017-03-08 플라즈마 처리 장치
CN201710148321.XA CN107230608B (zh) 2016-03-25 2017-03-13 等离子体处理装置
TW106109641A TWI634586B (zh) 2016-03-25 2017-03-23 等離子體處理裝置
US15/467,602 US20170275761A1 (en) 2016-03-25 2017-03-23 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016061509A JP6629116B2 (ja) 2016-03-25 2016-03-25 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019200381A Division JP2020029621A (ja) 2019-11-05 2019-11-05 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2017172019A JP2017172019A (ja) 2017-09-28
JP2017172019A5 true JP2017172019A5 (https=) 2019-01-24
JP6629116B2 JP6629116B2 (ja) 2020-01-15

Family

ID=59897754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016061509A Active JP6629116B2 (ja) 2016-03-25 2016-03-25 プラズマ処理装置

Country Status (5)

Country Link
US (1) US20170275761A1 (https=)
JP (1) JP6629116B2 (https=)
KR (1) KR101962531B1 (https=)
CN (1) CN107230608B (https=)
TW (1) TWI634586B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7144219B2 (ja) * 2018-03-22 2022-09-29 芝浦メカトロニクス株式会社 真空処理装置及びトレイ
JP7169786B2 (ja) * 2018-06-25 2022-11-11 東京エレクトロン株式会社 メンテナンス装置
JP7154086B2 (ja) * 2018-09-26 2022-10-17 芝浦メカトロニクス株式会社 成膜装置
JP7162483B2 (ja) * 2018-09-28 2022-10-28 芝浦メカトロニクス株式会社 成膜装置及び成膜製品の製造方法
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置
CN113366604A (zh) * 2019-02-06 2021-09-07 瑞士艾发科技 产生离子的方法和装置
CN111850471B (zh) * 2019-04-25 2023-05-12 芝浦机械电子装置株式会社 成膜装置以及成膜方法
US11545347B2 (en) * 2020-11-05 2023-01-03 Applied Materials, Inc. Internally divisible process chamber using a shutter disk assembly
JP7770106B2 (ja) * 2021-03-31 2025-11-14 芝浦メカトロニクス株式会社 成膜装置
DE102021207016B3 (de) * 2021-07-05 2022-10-13 Carl Zeiss Microscopy Gmbh Probenhaltersystem mit frei einstellbaren Neigungswinkeln
JP7719662B2 (ja) * 2021-08-18 2025-08-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JPWO2023171313A1 (https=) * 2022-03-07 2023-09-14
DE102024113393B3 (de) * 2024-05-14 2025-07-03 VON ARDENNE Asset GmbH & Co. KG Vakuumanordnung, Verfahren und Verwendung

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Publication number Priority date Publication date Assignee Title
JPS5144759B2 (https=) * 1972-11-01 1976-11-30
JPS56152973A (en) * 1980-04-30 1981-11-26 Tokuda Seisakusho Ltd Sputter etching device
JPH065522A (ja) * 1992-06-17 1994-01-14 Mitsubishi Heavy Ind Ltd 高周波プラズマｃｖｄ装置
US5264256A (en) * 1992-09-08 1993-11-23 Xerox Corporation Apparatus and process for glow discharge comprising substrate temperature control by shutter adjustment
TW299559B (https=) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
JPH11120949A (ja) * 1997-10-13 1999-04-30 Nissin Electric Co Ltd イオンビーム照射装置
JP4428873B2 (ja) 2001-02-28 2010-03-10 芝浦メカトロニクス株式会社 スパッタリング装置
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004323965A (ja) * 2003-04-28 2004-11-18 Canon Inc ラジカル発生方法及び同装置
CN100398693C (zh) * 2005-08-11 2008-07-02 孙卓 多功能复合磁控等离子体溅射装置
TWI522013B (zh) * 2009-03-30 2016-02-11 東京威力科創股份有限公司 Plasma processing device and plasma processing method
JP5648349B2 (ja) * 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
WO2011055671A1 (ja) * 2009-11-04 2011-05-12 東京エレクトロン株式会社 成膜方法およびキャパシタの形成方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP5712874B2 (ja) * 2011-09-05 2015-05-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US9396908B2 (en) * 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
EP2785152A4 (en) * 2011-11-22 2015-07-29 Kobe Steel Ltd PLASMA GENERATING SOURCE AND VACUUM PLASMA PROCESSING DEVICE HAVING THE SAME
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US20140262031A1 (en) * 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
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