JP2017172019A5 - - Google Patents

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Publication number
JP2017172019A5
JP2017172019A5 JP2016061509A JP2016061509A JP2017172019A5 JP 2017172019 A5 JP2017172019 A5 JP 2017172019A5 JP 2016061509 A JP2016061509 A JP 2016061509A JP 2016061509 A JP2016061509 A JP 2016061509A JP 2017172019 A5 JP2017172019 A5 JP 2017172019A5
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JP
Japan
Prior art keywords
cylindrical electrode
spacer
shield
processing apparatus
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016061509A
Other languages
English (en)
Japanese (ja)
Other versions
JP6629116B2 (ja
JP2017172019A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2016061509A external-priority patent/JP6629116B2/ja
Priority to JP2016061509A priority Critical patent/JP6629116B2/ja
Priority to KR1020170029543A priority patent/KR101962531B1/ko
Priority to CN201710148321.XA priority patent/CN107230608B/zh
Priority to US15/467,602 priority patent/US20170275761A1/en
Priority to TW106109641A priority patent/TWI634586B/zh
Publication of JP2017172019A publication Critical patent/JP2017172019A/ja
Publication of JP2017172019A5 publication Critical patent/JP2017172019A5/ja
Publication of JP6629116B2 publication Critical patent/JP6629116B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016061509A 2016-03-25 2016-03-25 プラズマ処理装置 Active JP6629116B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016061509A JP6629116B2 (ja) 2016-03-25 2016-03-25 プラズマ処理装置
KR1020170029543A KR101962531B1 (ko) 2016-03-25 2017-03-08 플라즈마 처리 장치
CN201710148321.XA CN107230608B (zh) 2016-03-25 2017-03-13 等离子体处理装置
TW106109641A TWI634586B (zh) 2016-03-25 2017-03-23 Plasma processing device
US15/467,602 US20170275761A1 (en) 2016-03-25 2017-03-23 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016061509A JP6629116B2 (ja) 2016-03-25 2016-03-25 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019200381A Division JP2020029621A (ja) 2019-11-05 2019-11-05 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2017172019A JP2017172019A (ja) 2017-09-28
JP2017172019A5 true JP2017172019A5 (enExample) 2019-01-24
JP6629116B2 JP6629116B2 (ja) 2020-01-15

Family

ID=59897754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016061509A Active JP6629116B2 (ja) 2016-03-25 2016-03-25 プラズマ処理装置

Country Status (5)

Country Link
US (1) US20170275761A1 (enExample)
JP (1) JP6629116B2 (enExample)
KR (1) KR101962531B1 (enExample)
CN (1) CN107230608B (enExample)
TW (1) TWI634586B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7144219B2 (ja) * 2018-03-22 2022-09-29 芝浦メカトロニクス株式会社 真空処理装置及びトレイ
JP7169786B2 (ja) * 2018-06-25 2022-11-11 東京エレクトロン株式会社 メンテナンス装置
JP7154086B2 (ja) * 2018-09-26 2022-10-17 芝浦メカトロニクス株式会社 成膜装置
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置
JP7162483B2 (ja) * 2018-09-28 2022-10-28 芝浦メカトロニクス株式会社 成膜装置及び成膜製品の製造方法
EP3921860A2 (en) * 2019-02-06 2021-12-15 Evatec AG Method of producing ions and apparatus
CN111850471B (zh) * 2019-04-25 2023-05-12 芝浦机械电子装置株式会社 成膜装置以及成膜方法
US11545347B2 (en) * 2020-11-05 2023-01-03 Applied Materials, Inc. Internally divisible process chamber using a shutter disk assembly
JP7770106B2 (ja) * 2021-03-31 2025-11-14 芝浦メカトロニクス株式会社 成膜装置
DE102021207016B3 (de) * 2021-07-05 2022-10-13 Carl Zeiss Microscopy Gmbh Probenhaltersystem mit frei einstellbaren Neigungswinkeln
JP7719662B2 (ja) * 2021-08-18 2025-08-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN118748984A (zh) * 2022-03-07 2024-10-08 Ａｇｃ株式会社 远红外线透射构件和远红外线透射构件的制造方法
DE102024113393B3 (de) * 2024-05-14 2025-07-03 VON ARDENNE Asset GmbH & Co. KG Vakuumanordnung, Verfahren und Verwendung

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JPS5144759B2 (enExample) * 1972-11-01 1976-11-30
JPS56152973A (en) * 1980-04-30 1981-11-26 Tokuda Seisakusho Ltd Sputter etching device
JPH065522A (ja) * 1992-06-17 1994-01-14 Mitsubishi Heavy Ind Ltd 高周波プラズマｃｖｄ装置
US5264256A (en) * 1992-09-08 1993-11-23 Xerox Corporation Apparatus and process for glow discharge comprising substrate temperature control by shutter adjustment
TW299559B (enExample) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
JPH11120949A (ja) * 1997-10-13 1999-04-30 Nissin Electric Co Ltd イオンビーム照射装置
JP4428873B2 (ja) 2001-02-28 2010-03-10 芝浦メカトロニクス株式会社 スパッタリング装置
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004323965A (ja) * 2003-04-28 2004-11-18 Canon Inc ラジカル発生方法及び同装置
CN100398693C (zh) * 2005-08-11 2008-07-02 孙卓 多功能复合磁控等离子体溅射装置
KR101687565B1 (ko) * 2009-03-30 2016-12-19 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP5648349B2 (ja) * 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
WO2011055671A1 (ja) * 2009-11-04 2011-05-12 東京エレクトロン株式会社 成膜方法およびキャパシタの形成方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP5712874B2 (ja) * 2011-09-05 2015-05-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
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