JP2017168555A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017168555A JP2017168555A JP2016050780A JP2016050780A JP2017168555A JP 2017168555 A JP2017168555 A JP 2017168555A JP 2016050780 A JP2016050780 A JP 2016050780A JP 2016050780 A JP2016050780 A JP 2016050780A JP 2017168555 A JP2017168555 A JP 2017168555A
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Abstract
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2002−314079号公報
[特許文献2] 特開2006−351985号公報
なお、第1領域50‐1、第2領域50‐2、および接続領域50‐3のソース電極54の厚みを変更せずに主電流とセンス電流の比が調節できる場合は、第1実施形態と同様に第1領域50‐1、第2領域50‐2および接続領域50‐3のソース電極54の厚みは同じとしてもよい。
Claims (13)
- 半導体基板と、
前記半導体基板の上方に設けられた表面電極と、
前記表面電極に接続された第1端子用の第1ワイヤと、
前記表面電極に接続された電流センス用の第2ワイヤと
を備え、
前記第2ワイヤに流れる電流の経路の抵抗が、前記第1ワイヤに流れる電流の経路の抵抗よりも高い、
半導体装置。 - 前記第1ワイヤの直径は、前記第2ワイヤの直径よりも大きい
請求項1に記載の半導体装置。 - 前記第1ワイヤの単位長さ当たりの抵抗は、前記第2ワイヤの単位長さ当たりの抵抗よりも低い
請求項1または2に記載の半導体装置。 - 前記第1ワイヤが接続する前記表面電極の第1領域は、前記第2ワイヤが接続する前記表面電極の第2領域よりも面積が大きい
請求項1から3のいずれか一項に記載の半導体装置。 - 前記第1ワイヤが接続する前記表面電極の第1領域は、前記第2ワイヤが接続する前記表面電極の第2領域と異なる材料を有する
請求項1から4のいずれか一項に記載の半導体装置。 - 前記第2ワイヤが接続する前記表面電極の第2領域の厚みは、前記第1ワイヤが接続する前記表面電極の第1領域の厚み以下である
請求項1から5いずれか一項に記載の半導体装置。 - 前記第2ワイヤが接続する前記表面電極の第2領域の厚みは、前記第1ワイヤが接続する前記表面電極の第1領域の厚みよりも薄い
請求項1から5いずれか一項に記載の半導体装置。 - 前記表面電極は、前記第1ワイヤが接続する前記表面電極の第1領域と前記第2ワイヤが接続する前記表面電極の第2領域とを第1方向において接続する接続領域を含み、
前記接続領域の前記第1方向に対して直行する第2方向の長さは、前記第2領域の前記第2方向の長さよりも小さい
請求項1から7のいずれか一項に記載の半導体装置。 - 前記第2方向と平行な方向において、前記第2領域および前記接続領域とは異なる位置に、前記半導体装置のゲート電極に接続されるゲート電極パッドをさらに備える
請求項8に記載の半導体装置。 - 前記第2方向と平行な方向において、前記接続領域および前記第2領域に対して、前記ゲート電極パッドとは反対側に、前記半導体装置の温度を測定するための温度センス素子用の温度センス電極パッドをさらに備える
請求項9に記載の半導体装置。 - 前記接続領域の抵抗は、前記半導体装置のオン抵抗の10倍以上である
請求項8から10いずれか一項に記載の半導体装置。 - 前記半導体基板は、電子にとって低抵抗の領域であるソース領域およびエミッタ領域のいずれかを含まないダイオード領域を前記接続領域の下方に有する
請求項8から11いずれか一項に記載の半導体装置。 - 前記表面電極の前記接続領域の厚みは、前記第1領域の厚みよりも薄く、かつ、前記第2領域の厚みよりも薄い
請求項8から12いずれか一項に記載の半導体装置。
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