JP2017155292A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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Abstract
Description
具体的には、例えば周波数27MHz、印加Vpp700Vの高周波発振電源に対し、負の電圧である−300VのDCを印加することでプラズマのシース電位Vsを低減させるといった事が考えられる。この場合、ウェハW上に形成されるプラズマのシース電位の最大値は約200Vとなる。
この方法により、イオンエネルギーを低下させて堆積膜へのダメージを抑制させることが可能となる。具体的には、高エネルギーでH3 +イオンが堆積膜内部深くに浸入するのが防止され、ダメージが生じるのを防ぐことができる。
この際、高周波発振のための電源の高周波波形を、基本波長の1周期分の長さを変えることなく、その波形を、同じ1周期分の長さにおいて正負電位1波長分の部分と、印加電圧が変化しない部分とで構成される形状(ここでは、Heart Beat波形と称する)に調製することが好ましい。
dV/dt=5.94×1010(V/s) ・・・(1)
dV/dt=9.18×1010(V/s) ・・・(2)
また、図9は、本実施の形態に係る高周波波形において、図8(a)〜(c)に示すように傾斜(dV/dt)を大きくした時の、電子密度(プラズマ密度)の変化及びHラジカルの生成速度の変化を示すグラフである。
例えば、正弦波を基本波とし、そのn倍の高調波までを重畳することにより調製した電位波形を電極に印加する場合、その電極電位V(t)は以下の式(3)で示される。
プラズマ電位を上昇させないため、V0はできる限り小さくすべきであるが、プラズマの生成を促進させるためには、波形を重畳して出現するVpp(V0に比例)の値が処理ガスの電離しきいエネルギー(εion)よりも大となる必要がある。即ち、以下の式(5)を満たす必要がある。
Vpp>εion ・・・(5)
また、図11(a)、(b)は、図10に示した各高周波波形に対応したウェハ(接地電極)−シャワー(駆動電極)間の電子密度分布を示す説明図である。
即ち、本実施の形態に係るプラズマ処理装置1においては、いわゆるHeart Beat波形を調製し得る高周波電源を用いて高周波発振を行うことが望ましく、更には、当該高周波波形については、正負電位1波長分の部分L1の傾斜の符号がdV/dt<0となるような波形にすることで、更なるイオンエネルギーの低下を見込むことができる。これにより、堆積膜へのダメージを更に抑制させることが可能となる。
10…処理容器
11…載置台
12…接地線
13…支持部材
20…電気ヒータ
30…上部電極
31…蓋体
32…ガス拡散室
33…支持部材
50…ガス供給管
51…処理ガス供給源
52…原料ガス供給部
53…還元ガス供給部
54…希ガス供給部
60…高周波電源
70…排気機構
100…制御部
300…シース電位低減手段
W…ウェハ(被処理体)
Claims (7)
- 基板に対して原料ガスを供給し、基板に対してプラズマを照射して成膜処理を行う基板処理装置であって、
基板を載置する載置台を気密に収容する処理容器と、
前記処理容器内にプラズマを生成するプラズマ源と、を備え、
前記プラズマ源には、プラズマ生成用の高周波電源が備えられ、
前記プラズマ源は、生成されるプラズマのシース電位を低減させるシース電位低減手段を備えることを特徴とする、基板処理装置。 - 前記シース電位低減手段は、前記高周波電源に対し重畳印加可能に設けられた直流電源であることを特徴とする、請求項1に記載の基板処理装置。
- 前記高周波電源に対し前記直流電源により印加される電圧は負の電圧であることを特徴とする、請求項2に記載の基板処理装置。
- 前記シース電位低減手段は、前記プラズマ源における高周波波形を波形調製する波形調製機構であり、
当該波形調製機構は、前記プラズマ源の高周波波形を、波形1周期分の長さにおいて、正負電位1波長分の部分と、印加電圧が変化しない部分とで構成される形状に調製することを特徴とする、請求項1に記載の基板処理装置。 - 前記波形調製機構によって調製された高周波波形において、前記正負電位1波長分の部分の傾きdV/dtは負であることを特徴とする、請求項4に記載の基板処理装置。
- 前記波形調製機構によって調製された高周波波形の前記正負電位1波長分の部分の周波数は、13.56MHz超であることを特徴とする、請求項1〜5のいずれか一項に記載の基板処理装置。
- 前記シース電位低減手段は、前記高周波電源に対し重畳印加可能に設けられた直流電源と、前記プラズマ源における高周波波形を波形調製する波形調製機構の両方から構成される、請求項1に記載の基板処理装置。
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US7615132B2 (en) * | 2003-10-17 | 2009-11-10 | Hitachi High-Technologies Corporation | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method |
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JP2011211168A (ja) * | 2010-03-09 | 2011-10-20 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
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US10395895B2 (en) * | 2015-08-27 | 2019-08-27 | Mks Instruments, Inc. | Feedback control by RF waveform tailoring for ion energy distribution |
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