JP2017135214A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017135214A JP2017135214A JP2016012709A JP2016012709A JP2017135214A JP 2017135214 A JP2017135214 A JP 2017135214A JP 2016012709 A JP2016012709 A JP 2016012709A JP 2016012709 A JP2016012709 A JP 2016012709A JP 2017135214 A JP2017135214 A JP 2017135214A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000011368 organic material Substances 0.000 claims abstract description 5
- 239000002356 single layer Substances 0.000 claims abstract description 3
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000011347 resin Substances 0.000 description 43
- 229920005989 resin Polymers 0.000 description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 26
- 238000005253 cladding Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/165—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the semiconductor sensitive to radiation being characterised by at least one potential-jump or surface barrier
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
【課題】製造工程を複雑化することなく、発光層の発光強度および発光寿命の低下を防止する。
【解決手段】半導体装置は、発光素子と、発光素子から発光された光の伝搬経路上に配置される受光素子と、を備え、発光素子は、基板上の周縁部よりも内側に配置される発光層と、発光層の上面の一部に配置される電極と、周縁部における基板の上面から、発光層の側面および発光層の上面の一部にかけて配置され、有機材料を含有する単層または積層構造の第1絶縁層と、を備える。
【選択図】図1
Description
図1は第1の実施形態による半導体装置の断面図である。図1の半導体装置は、フォトカプラ1の例を示している。図1のフォトカプラ1は、LED(発光素子)2と、LED2に対向配置された受光素子3とを備えている。LED2は、ボンディングワイヤ4にて第1リードフレーム5に接続され、受光素子3は、別のボンディングワイヤ4にて第2リードフレーム6に接続されている。
第1絶縁層22は、その材料によっては、GaAs基板11との密着性があまりよくない場合がありうる。第1絶縁層22とGaAs基板11との密着性が悪いと、第1絶縁層22とGaAs基板11との間に隙間が生じ、この隙間から水分等が第1絶縁層22の内側に入り込み、発光強度や発光寿命を低下させたり、剥離が生じる要因になりうる。
Claims (6)
- 発光素子と、
前記発光素子から発光された光の伝搬経路上に配置される受光素子と、を備え、
前記発光素子は、
基板上の周縁部よりも内側に配置される発光層と、
前記発光層の上面の一部に配置される電極と、
前記周縁部における前記基板の上面から、前記発光層の側面および前記発光層の上面の一部にかけて配置され、有機材料を含有する単層または積層構造の第1絶縁層と、を備える半導体装置。 - 前記第1絶縁層は、前記有機材料としてポリイミドを含有する請求項1に記載の半導体装置。
- 前記第1絶縁層は、
前記基板の上面から、前記発光層の側面および前記発光層の上面の一部にかけて配置される酸化物または窒化物を含有する第1層と、
前記第1層の上に配置され、有機材料を含有する第2層と、を有する請求項1または2に記載の半導体装置。 - 前記電極および前記第1絶縁層の表面全体を覆うように配置され、前記発光層からの発光光を透過させる第2絶縁層を備える請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記第2絶縁層は、前記受光素子の周囲を覆う請求項4に記載の半導体装置。
- 前記基板は、化合物半導体を含有し、
前記発光層から発光される光は、赤外光である請求項1乃至5のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016012709A JP6416800B2 (ja) | 2016-01-26 | 2016-01-26 | 半導体装置 |
US15/226,681 US9911721B2 (en) | 2016-01-26 | 2016-08-02 | Semiconductor device |
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JP2016012709A JP6416800B2 (ja) | 2016-01-26 | 2016-01-26 | 半導体装置 |
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JP2017135214A true JP2017135214A (ja) | 2017-08-03 |
JP6416800B2 JP6416800B2 (ja) | 2018-10-31 |
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JP2016012709A Active JP6416800B2 (ja) | 2016-01-26 | 2016-01-26 | 半導体装置 |
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US (1) | US9911721B2 (ja) |
JP (1) | JP6416800B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021150534A (ja) * | 2020-03-19 | 2021-09-27 | 株式会社東芝 | 光結合装置 |
Families Citing this family (1)
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US10902405B1 (en) * | 2016-05-11 | 2021-01-26 | Wells Fargo Bank, N.A. | Transient mobile wallets |
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JPS645079A (en) * | 1987-06-26 | 1989-01-10 | Nec Corp | Semiconductor light emitting device |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2021150534A (ja) * | 2020-03-19 | 2021-09-27 | 株式会社東芝 | 光結合装置 |
JP7354034B2 (ja) | 2020-03-19 | 2023-10-02 | 株式会社東芝 | 光結合装置 |
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JP6416800B2 (ja) | 2018-10-31 |
US9911721B2 (en) | 2018-03-06 |
US20170213812A1 (en) | 2017-07-27 |
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