JP2017135178A - 光源素子放熱構造体および光源装置 - Google Patents
光源素子放熱構造体および光源装置 Download PDFInfo
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- JP2017135178A JP2017135178A JP2016012059A JP2016012059A JP2017135178A JP 2017135178 A JP2017135178 A JP 2017135178A JP 2016012059 A JP2016012059 A JP 2016012059A JP 2016012059 A JP2016012059 A JP 2016012059A JP 2017135178 A JP2017135178 A JP 2017135178A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 20
- 229910052795 boron group element Inorganic materials 0.000 claims abstract description 38
- 150000004767 nitrides Chemical class 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 25
- 239000013078 crystal Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
- F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Devices (AREA)
Abstract
【解決手段】光源素子放熱構造体1は、13族元素窒化物からなり、第一の主面1c、第二の主面1dおよび外側端面1eを有する膜1、第一の主面1cおよび第二の主面1dに開口する貫通孔2からなる光源素子収容部15、および貫通孔2に面し、光源素子に接する光源素子固定面2aを有する。
【選択図】 図1
Description
13族元素窒化物からなり、第一の主面、第二の主面および外側端面を有する膜、
前記第一の主面および前記第二の主面に開口する貫通孔からなる光源素子収容部、および
前記貫通孔に面し、前記光源素子に接する光源素子固定面
を有することを特徴とする。
まず、図4(a)、(b)に示すように、ベース基板20を準備する。次いで、図4(c)に示すように、ベース基板20の成膜面20a上に種結晶膜21を形成する。
Claims (10)
- 半導体レーザを発する光源素子を固定し、放熱するための光源素子放熱構造体であって、
13族元素窒化物からなり、第一の主面、第二の主面および外側端面を有する膜、
前記第一の主面および前記第二の主面に開口する貫通孔からなる光源素子収容部、および
前記貫通孔に面し、前記光源素子に接する光源素子固定面
を有することを特徴とする、光源素子放熱構造体。 - 複数の前記光源素子固定面を有することを特徴とする、請求項1記載の構造体。
- 複数の前記光源素子固定面が前記貫通孔を挟んで対向していることを特徴とする、請求項2記載の構造体。
- 前記13族元素窒化物がGaNであることを特徴とする、請求項1〜3のいずれか一つの請求項に記載の構造体。
- 前記13族元素窒化物に亜鉛がドープされていることを特徴とする、請求項1〜4のいずれか一つの請求項に記載の構造体。
- 前記光源素子用の電極を有することを特徴とする、請求項1〜5のいずれか一つの請求項に記載の構造体。
- 一対の前記電極が、前記第一の主面に設けられており、前記第一の主面上で前記貫通孔を挟んで対向していることを特徴とする、請求項6記載の構造体。
- 前記外側端面に設けられている外側電極を有することを特徴とする、請求項6または7記載の構造体。
- 請求項1〜8のいずれか一つの請求項に記載の構造体、および前記光源素子収容部に収容された光源素子であって、前記光源素子固定面に固定された光源素子を備えていることを特徴とする、光源装置。
- 前記構造体が複数の前記光源素子固定面を有しており、前記光源素子が前記各光源素子固定面に対してそれぞれ接していることを特徴とする、請求項9記載の装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2016012059A JP6510433B2 (ja) | 2016-01-26 | 2016-01-26 | 光源素子放熱構造体の製造方法 |
EP17152832.6A EP3200251B1 (en) | 2016-01-26 | 2017-01-24 | Method of producing heat discharge structures for light source devices |
US15/413,992 US20170211797A1 (en) | 2016-01-26 | 2017-01-24 | Heat Discharge Structures for Light Source Devices and Light Source Systems |
US16/010,977 US10598369B2 (en) | 2016-01-26 | 2018-06-18 | Heat discharge structures for light source devices and light source systems |
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JP2016012059A JP6510433B2 (ja) | 2016-01-26 | 2016-01-26 | 光源素子放熱構造体の製造方法 |
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JP2017135178A true JP2017135178A (ja) | 2017-08-03 |
JP6510433B2 JP6510433B2 (ja) | 2019-05-08 |
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US (2) | US20170211797A1 (ja) |
EP (1) | EP3200251B1 (ja) |
JP (1) | JP6510433B2 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01181490A (ja) * | 1988-01-11 | 1989-07-19 | Canon Inc | 半導体レーザー装置 |
JP2002057158A (ja) * | 2000-08-09 | 2002-02-22 | Sony Corp | 絶縁性窒化物層及びその形成方法、半導体装置及びその製造方法 |
JP2009064961A (ja) * | 2007-09-06 | 2009-03-26 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
WO2013128794A1 (ja) * | 2012-03-02 | 2013-09-06 | パナソニック株式会社 | 半導体発光装置 |
US20140112363A1 (en) * | 2012-10-24 | 2014-04-24 | Alfred Feitisch | Solderless mounting for semiconductor lasers |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6355497B1 (en) * | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
JP4275336B2 (ja) * | 2001-11-16 | 2009-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US10125931B2 (en) * | 2008-03-01 | 2018-11-13 | Goldeneye, Inc. | Barrier with integrated self cooling solid state light sources |
JP5216716B2 (ja) * | 2008-08-20 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
CN102449785A (zh) * | 2009-06-05 | 2012-05-09 | 住友化学株式会社 | 光器件、半导体基板、光器件的制造方法、以及半导体基板的制造方法 |
US9583678B2 (en) * | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US9765934B2 (en) * | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
JP6133191B2 (ja) * | 2013-10-18 | 2017-05-24 | 古河電気工業株式会社 | 窒化物半導体装置、ダイオード、および電界効果トランジスタ |
-
2016
- 2016-01-26 JP JP2016012059A patent/JP6510433B2/ja active Active
-
2017
- 2017-01-24 US US15/413,992 patent/US20170211797A1/en not_active Abandoned
- 2017-01-24 EP EP17152832.6A patent/EP3200251B1/en active Active
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2018
- 2018-06-18 US US16/010,977 patent/US10598369B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01181490A (ja) * | 1988-01-11 | 1989-07-19 | Canon Inc | 半導体レーザー装置 |
JP2002057158A (ja) * | 2000-08-09 | 2002-02-22 | Sony Corp | 絶縁性窒化物層及びその形成方法、半導体装置及びその製造方法 |
JP2009064961A (ja) * | 2007-09-06 | 2009-03-26 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
WO2013128794A1 (ja) * | 2012-03-02 | 2013-09-06 | パナソニック株式会社 | 半導体発光装置 |
US20140112363A1 (en) * | 2012-10-24 | 2014-04-24 | Alfred Feitisch | Solderless mounting for semiconductor lasers |
Also Published As
Publication number | Publication date |
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EP3200251A1 (en) | 2017-08-02 |
US20170211797A1 (en) | 2017-07-27 |
EP3200251B1 (en) | 2019-12-04 |
JP6510433B2 (ja) | 2019-05-08 |
US10598369B2 (en) | 2020-03-24 |
US20180306428A1 (en) | 2018-10-25 |
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