JP2017103446A - p型金属酸化物半導体材料及びトランジスタ - Google Patents
p型金属酸化物半導体材料及びトランジスタ Download PDFInfo
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- JP2017103446A JP2017103446A JP2016099185A JP2016099185A JP2017103446A JP 2017103446 A JP2017103446 A JP 2017103446A JP 2016099185 A JP2016099185 A JP 2016099185A JP 2016099185 A JP2016099185 A JP 2016099185A JP 2017103446 A JP2017103446 A JP 2017103446A
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- metal oxide
- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000000463 material Substances 0.000 title claims abstract description 47
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 40
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 40
- 238000009413 insulation Methods 0.000 abstract 1
- -1 aluminum-substituted germanium oxide Chemical class 0.000 description 20
- 238000004364 calculation method Methods 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 239000010409 thin film Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000004088 simulation Methods 0.000 description 12
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical class [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 229910005793 GeO 2 Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/1025—Channel region of field-effect devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
p型金属酸化物半導体材料を提供する。
【解決手段】
p型金属酸化物半導体材料は、AlxGe(1−x)Oy(0<x≦0.6であり、1.0≦y≦2.0)で構成されている。このp型金属酸化物半導体材料は、トランジスタに適用され得る。このトランジスタは、ゲート電極と、ゲート絶縁層によってゲート電極から隔てられたチャネル層と、チャネル層の両側に接触するソース電極及びドレイン電極と、を含み得る。チャネル層は、上記のp型金属酸化物半導体材料である。
【選択図】図2
Description
10…基板
20…ゲート電極
30…ゲート絶縁層
40…チャネル層
50…ソース電極
52…ドレイン電極
60…保護層
Claims (10)
- AlxGe(1−x)Oy(0<x≦0.6であり、1.0≦y≦2.0)で構成されたp型金属酸化物半導体材料。
- アモルファスである、請求項1に記載のp型金属酸化物半導体材料。
- 抵抗率が10−3Ω・cm〜103Ω・cmである、請求項1に記載のp型金属酸化物半導体材料。
- 正孔移動度が0.5cm2V−1s−1〜75cm2V−1s−1である、請求項1に記載のp型金属酸化物半導体材料。
- 正孔キャリア濃度が1013cm−3〜1021cm−3である、請求項1に記載のp型金属酸化物半導体材料。
- ゲート電極と、
ゲート絶縁層によって前記ゲート電極から隔てられたチャネル層と、
前記チャネル層の両側に接触するソース電極及びドレイン電極と、
を含むトランジスタであって、
前記チャネル層は、AlxGe(1−x)Oy(0<x≦0.6であり、1.0≦y≦2.0)で構成されたp型金属酸化物半導体材料である、トランジスタ。 - 前記p型金属酸化物半導体材料はアモルファスである、請求項6に記載のトランジスタ。
- 前記p型金属酸化物半導体材料の抵抗率は、10−3Ω・cm〜103Ω・cm〜である、請求項6に記載のトランジスタ。
- 前記p型金属酸化物半導体材料の正孔移動度は、0.5cm2V−1s−1〜75cm2V−1s−1である、請求項6に記載のトランジスタ。
- 前記p型金属酸化物半導体材料の正孔キャリア濃度は、1013cm−3〜1021cm−3である、請求項6に記載のトランジスタ。
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TW104140699 | 2015-12-04 | ||
TW104140699A TWI566417B (zh) | 2015-12-04 | 2015-12-04 | p型金屬氧化物半導體材料與電晶體 |
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JP2017103446A true JP2017103446A (ja) | 2017-06-08 |
JP6186042B2 JP6186042B2 (ja) | 2017-08-23 |
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US (1) | US9401433B1 (ja) |
JP (1) | JP6186042B2 (ja) |
CN (1) | CN106847915B (ja) |
TW (1) | TWI566417B (ja) |
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WO2023008452A1 (ja) * | 2021-07-30 | 2023-02-02 | 株式会社Flosfia | 酸化物半導体および半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228516A (ja) * | 1999-02-08 | 2000-08-15 | Tdk Corp | 半導体積層薄膜、電子デバイスおよびダイオード |
JP2010212285A (ja) * | 2009-03-06 | 2010-09-24 | Canon Inc | 半導体素子の形成方法および半導体素子 |
JP2010219536A (ja) * | 2009-03-18 | 2010-09-30 | Taiwan Semiconductor Manufacturing Co Ltd | 半導体装置及びその製造方法 |
JP2012216780A (ja) * | 2011-03-31 | 2012-11-08 | Ricoh Co Ltd | p型酸化物、p型酸化物製造用組成物、p型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
JP2013058637A (ja) * | 2011-09-08 | 2013-03-28 | Tamura Seisakusho Co Ltd | Ga2O3系半導体素子 |
JP2015129079A (ja) * | 2013-12-31 | 2015-07-16 | 財團法人工業技術研究院Industrial Technology Research Institute | p型金属酸化物半導体材料とその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2501147B2 (ja) * | 1991-06-05 | 1996-05-29 | 株式会社ジャパンエナジー | 高純度アルキルホスフィンの製造方法 |
US6821707B2 (en) * | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
SG93843A1 (en) * | 1996-03-11 | 2003-01-21 | Matsushita Electric Ind Co Ltd | Method of producing an optical information recording medium |
JP2003179242A (ja) | 2001-12-12 | 2003-06-27 | National Institute Of Advanced Industrial & Technology | 金属酸化物半導体薄膜及びその製法 |
CN1202264C (zh) * | 2002-04-02 | 2005-05-18 | 浙江大学 | 基于基因组外显子芯片的数量性状基因位点定位方法 |
US7141489B2 (en) | 2003-05-20 | 2006-11-28 | Burgener Ii Robert H | Fabrication of p-type group II-VI semiconductors |
JP4216707B2 (ja) * | 2003-12-25 | 2009-01-28 | 株式会社東芝 | 半導体装置の製造方法 |
KR100711203B1 (ko) | 2005-08-23 | 2007-04-24 | 한국과학기술연구원 | 산화아연을 이용한 p형-진성-n형 구조의 발광 다이오드제조방법 |
US20100183500A1 (en) | 2009-01-17 | 2010-07-22 | Henry Lee | Germane gas production from germanium byproducts or impure germanium compounds |
US20110007426A1 (en) * | 2009-07-13 | 2011-01-13 | Seagate Technology Llc | Trapezoidal back bias and trilayer reader geometry to enhance device performance |
PT105039A (pt) | 2010-04-06 | 2011-10-06 | Univ Nova De Lisboa | Ligas de óxidos tipo p baseados em óxidos de cobre, óxidos estanho, óxidos de ligas de estanho-cobre e respectiva liga metálica, e óxido de níquel, com os respectivos metais embebidos, respectivo processo de fabrico e utilização |
US9012278B2 (en) * | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228516A (ja) * | 1999-02-08 | 2000-08-15 | Tdk Corp | 半導体積層薄膜、電子デバイスおよびダイオード |
JP2010212285A (ja) * | 2009-03-06 | 2010-09-24 | Canon Inc | 半導体素子の形成方法および半導体素子 |
JP2010219536A (ja) * | 2009-03-18 | 2010-09-30 | Taiwan Semiconductor Manufacturing Co Ltd | 半導体装置及びその製造方法 |
JP2012216780A (ja) * | 2011-03-31 | 2012-11-08 | Ricoh Co Ltd | p型酸化物、p型酸化物製造用組成物、p型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
JP2013058637A (ja) * | 2011-09-08 | 2013-03-28 | Tamura Seisakusho Co Ltd | Ga2O3系半導体素子 |
JP2015129079A (ja) * | 2013-12-31 | 2015-07-16 | 財團法人工業技術研究院Industrial Technology Research Institute | p型金属酸化物半導体材料とその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023008452A1 (ja) * | 2021-07-30 | 2023-02-02 | 株式会社Flosfia | 酸化物半導体および半導体装置 |
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CN106847915B (zh) | 2019-08-30 |
US9401433B1 (en) | 2016-07-26 |
TW201721875A (zh) | 2017-06-16 |
CN106847915A (zh) | 2017-06-13 |
JP6186042B2 (ja) | 2017-08-23 |
TWI566417B (zh) | 2017-01-11 |
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