JP2017103336A - 半導体装置の製造方法及び製造装置 - Google Patents
半導体装置の製造方法及び製造装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 239000010410 layer Substances 0.000 claims abstract description 438
- 238000005530 etching Methods 0.000 claims abstract description 138
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002344 surface layer Substances 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract 2
- 239000000243 solution Substances 0.000 claims description 78
- 239000011241 protective layer Substances 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
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- 238000001035 drying Methods 0.000 claims description 8
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- 239000007800 oxidant agent Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 1
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- 230000008569 process Effects 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract 6
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- 238000001039 wet etching Methods 0.000 description 28
- 239000011229 interlayer Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
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- 230000000149 penetrating effect Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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Abstract
【解決手段】基体11上に絶縁層21_1〜21_5と犠牲層22_1〜22_4とを交互に複数積層して積層体を形成する工程と、積層体上にシリコン層50を形成する工程と、シリコン層50の一部を除去して絶縁層21_1の一部を露出し、シリコン層50の表面層に保護層50Aを形成する工程と、保護層50Aを形成した後、第1エッチング液を用いて、露出した絶縁層21_1をエッチングして、犠牲層22_1の一部を露出する工程と、絶縁層21_1をエッチングした後、第2エッチング液を用いて、露出した犠牲層22_1をエッチングする工程と、絶縁層21_1及び犠牲層22_1をエッチングした後、第3エッチング液を用いてシリコン層50をエッチングし、絶縁層21_1をさらに露出する工程とを備える。
【選択図】図14
Description
本実施形態の半導体装置の製造方法を説明する前に、半導体装置の全体構造について説明する。
図1は、実施形態における半導体装置のメモリセルアレイの構造を示す図である。なお、図1においては、図を見易くするために、メモリホールMH内に形成された絶縁膜以外の絶縁部分については図示を省略している。また、以下の実施形態では半導体としてシリコンを例示するが、シリコン以外の半導体を用いてもよい。
次に、メモリセルアレイ内のメモリセルの構成を説明する。本実施形態においては、例えば導電層が4層の場合を例示する。
図3は、各導電層WL1〜WL4を、図示しない上層配線と電気的に接続するためのコンタクト領域の断面構造を示す。このコンタクト領域は、各導電層の階段状パターンを有している。コンタクト領域は、図1に示すメモリセルアレイが形成された領域よりもX方向において外側の領域である。
次に、本実施形態における導電層WLと絶縁層21の階段状パターンの形成方法について説明する。ここでは、導電層WLに換えて、先に犠牲層としてのシリコン窒化層が形成され、その後、シリコン窒化層が除去され、このシリコン窒化層が除去された領域に、導電層WLとしての導電材料が形成される場合を例に取る。また、ここでも4層の導電層WL1〜WL4を積層した例を示すが、導電層の層数は任意である。
本実施形態によれば、複数種類の層が積層された複数層の階段状パターンを容易に形成することができる。
前述した実施形態では、絶縁層(第1の層)と犠牲層(第2の層)が積層され、シリコン層がマスク層として用いられた例を示したが、ここでは、第1の層、第2の層、及びマスク層として他の材料を用いた例を説明する。
次に、実施形態及び他の実施形態における絶縁層(第1の層)、犠牲層(第2の層)、及びマスク層のエッチング工程のフローについて詳述する。
まず、第1エッチング液を用いて、ウェハ上の第1の層をウェットエッチングする(S1)。続いて、ウェハを例えば純水によりリンスする(S2)。
メモリセルアレイ内のメモリストリングはU字状に限らず、複数の導電層WLの積層方向に直線状に延びるI字状であってもよい。また、導電層WLとチャネルボディ20との間の絶縁膜構造は、ONO(Oxide-Nitride-Oxide)構造に限らず、例えば電荷蓄積層とゲート絶縁膜との2層構造であってもよい。
Claims (14)
- 基板上に第2の層と第1の層とを交互に複数積層して積層体を形成する工程と、
前記第1の層を表面に有する積層体上にマスク層を形成する工程と、
前記マスク層の一部を除去して前記第1の層の一部を露出し、前記マスク層の表面層に保護層を形成する工程と、
前記保護層を形成した後、第1エッチング液を用いて、露出した前記第1の層をエッチングして、前記第2の層の一部を露出する工程と、
前記第1の層をエッチングした後、第2エッチング液を用いて、露出した前記第2の層をエッチングする工程と、
前記第1の層及び前記第2の層をエッチングした後、第3エッチング液を用いて前記マスク層をエッチングし、前記第1の層をさらに露出する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記第1エッチング液の前記第1の層に対するエッチングレートは、前記第2の層及び前記マスク層に対するエッチングレートより速いことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第2エッチング液の前記第2の層に対するエッチングレートは、前記第1の層及び前記マスク層に対するエッチングレートより速いことを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記第3エッチング液の前記保護層が形成されていないマスク層部分に対するエチングレートは、前記第1の層及び前記第2の層に対するエッチングレートより速いことを特徴とする請求項1乃至3のいずれかに記載の半導体装置の製造方法。
- 前記保護層は、ホウ素(B)、リン(P)、ヒ素(As)、アルミニウム(Al)、炭素(C)の少なくともいずれか1つを含むことを特徴とする請求項1乃至4のいずれかに記載の半導体装置の製造方法。
- 前記第1の層はシリコン酸化層、前記第2の層はシリコン窒化層、前記マスク層はシリコンを含む層であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記第1の層はシリコン酸化層、前記第2の層はメタル層、前記マスク層はシリコンを含む層であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記第1の層はシリコン窒化層、前記第2の層はメタル層、前記マスク層はシリコンを含む層であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記第1の層はシリコン酸化層、前記第2の層はシリコンを含む層、前記マスク層はメタル層とシリコン窒化層の積層であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記第1の層はシリコン窒化層、前記第2の層はシリコンを含む層、前記マスク層はシリコン酸化層とメタル層の積層であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記第1、第2、第3エッチング液の各々は、フッ化水素酸、熱燐酸、酸化剤、及びアルカリ性水溶液のうちの少なくともいずれか1つを含むことを特徴とする請求項1乃至10のいずれかに記載の半導体装置の製造方法。
- 前記酸化剤は、過酸化水素水あるいは硝酸の少なくともいずれか1つを含むことを特徴とする請求項11に記載の半導体装置の製造方法。
- 前記第1の層をエッチングする工程の後、乾燥工程を行うことなく、前記第2の層をエッチングする工程を行い、前記第2の層をエッチングする工程の後、乾燥工程を行うことなく、前記マスク層の端部をエッチングする工程を行うことを特徴とする請求項1乃至12のいずれかに記載の半導体装置の製造方法。
- 第2の層と第1の層とを交互に複数積層した積層体とマスク層が形成された基板をウェットエッチングする半導体装置の製造装置であって、
前記マスク層下に露出した第1の層をエッチングして、前記第2の層の一部を露出するように第1エッチング液を供給する第1のノズルと、
前記第1の層をエッチングした後、露出した前記第2の層をエッチングするように第2エッチング液を供給する第2のノズルと、
前記第1の層及び前記第2の層をエッチングした後、前記マスク層をエッチングし、前記第1の層をさらに露出するように第3エッチング液を供給する第3のノズルと、
を具備することを特徴とする半導体装置の製造装置。
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