JP2017087353A - Method for production of electro-deposited grind stone - Google Patents
Method for production of electro-deposited grind stone Download PDFInfo
- Publication number
- JP2017087353A JP2017087353A JP2015220769A JP2015220769A JP2017087353A JP 2017087353 A JP2017087353 A JP 2017087353A JP 2015220769 A JP2015220769 A JP 2015220769A JP 2015220769 A JP2015220769 A JP 2015220769A JP 2017087353 A JP2017087353 A JP 2017087353A
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- JP
- Japan
- Prior art keywords
- base
- protective layer
- grindstone
- forming step
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004575 stone Substances 0.000 title abstract 7
- 239000011241 protective layer Substances 0.000 claims abstract description 73
- 238000007747 plating Methods 0.000 claims abstract description 57
- 239000010410 layer Substances 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000006061 abrasive grain Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 60
- 229910052759 nickel Inorganic materials 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 238000004070 electrodeposition Methods 0.000 claims description 15
- 238000000227 grinding Methods 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 abstract description 6
- 239000010980 sapphire Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 41
- 230000002093 peripheral effect Effects 0.000 description 11
- 125000003118 aryl group Chemical group 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000003868 ammonium compounds Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- GNPSDJOWGWWXSS-UHFFFAOYSA-M 1-benzylpyridin-1-ium;chloride Chemical compound [Cl-].C=1C=CC=C[N+]=1CC1=CC=CC=C1 GNPSDJOWGWWXSS-UHFFFAOYSA-M 0.000 description 1
- GKQHIYSTBXDYNQ-UHFFFAOYSA-M 1-dodecylpyridin-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+]1=CC=CC=C1 GKQHIYSTBXDYNQ-UHFFFAOYSA-M 0.000 description 1
- 125000004343 1-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006201 3-phenylpropyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- -1 4-phenylbutyl Chemical group 0.000 description 1
- RUPBZQFQVRMKDG-UHFFFAOYSA-M Didecyldimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCC[N+](C)(C)CCCCCCCCCC RUPBZQFQVRMKDG-UHFFFAOYSA-M 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- VBIIFPGSPJYLRR-UHFFFAOYSA-M Stearyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C VBIIFPGSPJYLRR-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- JBIROUFYLSSYDX-UHFFFAOYSA-M benzododecinium chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 JBIROUFYLSSYDX-UHFFFAOYSA-M 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- VJGNLOIQCWLBJR-UHFFFAOYSA-M benzyl(tributyl)azanium;chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CC1=CC=CC=C1 VJGNLOIQCWLBJR-UHFFFAOYSA-M 0.000 description 1
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229960004670 didecyldimethylammonium chloride Drugs 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- SFVFIFLLYFPGHH-UHFFFAOYSA-M stearalkonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 SFVFIFLLYFPGHH-UHFFFAOYSA-M 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- MQAYPFVXSPHGJM-UHFFFAOYSA-M trimethyl(phenyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)C1=CC=CC=C1 MQAYPFVXSPHGJM-UHFFFAOYSA-M 0.000 description 1
- CEYYIKYYFSTQRU-UHFFFAOYSA-M trimethyl(tetradecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)C CEYYIKYYFSTQRU-UHFFFAOYSA-M 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0018—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by electrolytic deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
- C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
本発明は、めっき層で砥粒を固定した砥石部を備える電着砥石の製造方法に関する。 The present invention relates to a method for manufacturing an electrodeposition grindstone including a grindstone portion in which abrasive grains are fixed with a plating layer.
ＬＥＤ等に代表される光デバイスの製造には、機械的・熱的特性、及び化学的安定性に優れたサファイア基板を使用することが多い。光デバイスを構成する各種機能膜が形成されたサファイア基板は、例えば、電着によって形成された環状のブレード（電着砥石）で切削され、複数の光デバイスへと分割される（例えば、特許文献１参照）。 In the manufacture of optical devices typified by LEDs and the like, a sapphire substrate having excellent mechanical and thermal characteristics and chemical stability is often used. A sapphire substrate on which various functional films constituting an optical device are formed is cut by, for example, an annular blade (electrodeposition grindstone) formed by electrodeposition and divided into a plurality of optical devices (for example, Patent Documents) 1).
ところで、電着によって形成された上述のようなブレードでは、ニッケル等でなるめっき層によって砥粒が強く固定されている。そのため、サファイア基板のような難切削材を切削すると、古い砥粒が脱落して新たな砥粒が表出するいわゆる自生発刃が生じ難く、ブレードの加工能力を十分に発揮できないという問題が生じていた。 By the way, in the above-described blade formed by electrodeposition, abrasive grains are strongly fixed by a plating layer made of nickel or the like. Therefore, when cutting difficult-to-cut materials such as sapphire substrates, there is a problem that old abrasive grains fall off and new abrasive grains appear, so-called self-generated blades are not easily generated, and the blade's processing ability cannot be fully exhibited. It was.
本発明はかかる問題点に鑑みてなされたものであり、その目的とするところは、サファイア基板のような難切削材を加工する場合にも適切な自生発刃を生じ得る電着砥石の製造方法を提供することである。 The present invention has been made in view of such problems, and the object of the present invention is to provide a method for producing an electrodeposition grindstone capable of producing an appropriate self-generated blade even when processing difficult-to-cut materials such as sapphire substrates. Is to provide.
本発明の一側面によれば、電着砥石の製造方法であって、アルミニウムを含む材料で形成された環状の基台に、多孔性構造のめっき層と該めっき層に分散された砥粒とでなる砥石部を形成する砥石部形成工程と、該砥石部に重なる該基台の一部に薬液を作用させて、該基台の一部を除去する基台除去工程と、該砥石部形成工程の前に、該めっき層を通過した該薬液から該基台を保護するための保護層を該基台の表面に形成する保護層形成工程と、を備えることを特徴とする電着砥石の製造方法が提供される。 According to one aspect of the present invention, there is provided a method for producing an electrodeposition grindstone, wherein a ring-shaped base formed of a material containing aluminum, a porous structure plating layer, and abrasive grains dispersed in the plating layer, A whetstone portion forming step for forming a whetstone portion, a base removal step for removing a portion of the base by applying a chemical solution to a portion of the base overlapping the whetstone portion, and forming the whetstone portion A protective layer forming step for forming on the surface of the base a protective layer for protecting the base from the chemical solution that has passed through the plating layer before the step. A manufacturing method is provided.
本発明の一側面において、前記砥石部形成工程では、前記めっき層を多孔性構造とするための添加剤と前記砥粒とが混入されたニッケルめっき浴槽中に、前記基台とニッケル電極とを浸漬させて、該基台を陰極、該ニッケル電極を陽極として直流電流を流すことで、前記保護層に重なる前記砥石部を形成することが好ましい。 In one aspect of the present invention, in the grinding wheel portion forming step, the base and the nickel electrode are placed in a nickel plating bath in which an additive for making the plating layer a porous structure and the abrasive grains are mixed. It is preferable to form the grindstone portion that overlaps the protective layer by flowing a direct current using the base as a cathode and the nickel electrode as an anode.
また、本発明の一側面において、前記基台除去工程の後、前記保護層の一部を除去して前記砥石部の該保護層で覆われていた領域を露出させる保護層除去工程をさらに備えることが好ましい。 Moreover, one aspect of the present invention further includes a protective layer removing step of removing a part of the protective layer to expose a region covered with the protective layer of the grindstone after the base removing step. It is preferable.
また、本発明の一側面において、前記保護層形成工程では、銅を含む材料で前記保護層を形成し、前記基台除去工程では、前記薬液として水酸化ナトリウム溶液を用いて前記基台の一部を除去し、前記保護層除去工程では、前記基台で覆われていた前記保護層の一部に硫酸アンモニウム溶液を作用させて該保護層の一部を除去することが好ましい。 Further, in one aspect of the present invention, in the protective layer forming step, the protective layer is formed of a material containing copper, and in the base removing step, a sodium hydroxide solution is used as the chemical solution to form a part of the base. In the protective layer removing step, an ammonium sulfate solution is preferably allowed to act on a part of the protective layer covered with the base to remove a part of the protective layer.
本発明の一側面に係る電着砥石の製造方法では、多孔性構造を有するめっき層に砥粒を分散させた砥石部を形成するので、めっき層が適切に消耗し易くなり、自生発刃を促進できる。つまり、本発明の一側面に係る電着砥石の製造方法によれば、サファイア基板のような難切削材を加工する場合にも適切な自生発刃を生じる電着砥石を製造できる。 In the method for producing an electrodeposited grindstone according to one aspect of the present invention, a grindstone portion in which abrasive grains are dispersed in a plating layer having a porous structure is formed. Can promote. That is, according to the method for producing an electrodeposited grindstone according to one aspect of the present invention, an electrodeposited grindstone that produces an appropriate self-generated blade can be produced even when a difficult-to-cut material such as a sapphire substrate is processed.
また、本発明の一側面に係る電着砥石の製造方法では、砥石部を形成する前に、めっき層を通過した薬液から基台を保護するための保護層を基台の表面に形成するので、砥石部に重なる基台の一部を薬液で除去する際に、めっき層を通過した薬液によって砥石部に重なる基台の他の一部が除去されてしまうこともない。 Further, in the method for manufacturing an electrodeposited grindstone according to one aspect of the present invention, before forming the grindstone portion, a protective layer for protecting the base from the chemical solution that has passed through the plating layer is formed on the surface of the base. When removing a part of the base that overlaps the grindstone with a chemical, the other part of the base that overlaps the grindstone is not removed by the chemical that has passed through the plating layer.
添付図面を参照して、本発明の一側面に係る実施形態を説明する。本実施形態に係る電着砥石の製造方法は、保護層形成工程（図１、図２（Ａ）、図２（Ｂ）参照）、砥石部形成工程（図３、図４（Ａ）、図４（Ｂ）参照）、基台除去工程（図５（Ａ）、図５（Ｂ）参照）、及び保護層除去工程（図６（Ａ）、図６（Ｂ）参照）を含む。 Embodiments according to one aspect of the present invention will be described with reference to the accompanying drawings. The electrodeposition grindstone manufacturing method according to this embodiment includes a protective layer forming step (see FIGS. 1, 2A, 2B), a grindstone portion forming step (FIGS. 3, 4A), and FIG. 4 (B)), a base removal step (see FIGS. 5A and 5B), and a protective layer removal step (see FIGS. 6A and 6B).
保護層形成工程では、アルミニウムを含む材料で形成された環状の基台の表面に、基台を保護するための保護層を形成する。砥石部形成工程では、基台に形成された保護層と重なる位置に、多孔性構造のめっき層に砥粒が分散されてなる砥石部を形成する。 In the protective layer forming step, a protective layer for protecting the base is formed on the surface of the annular base made of a material containing aluminum. In the grindstone portion forming step, a grindstone portion in which abrasive grains are dispersed in a plating layer having a porous structure is formed at a position overlapping the protective layer formed on the base.
基台除去工程では、砥石部に重なる基台の一部を薬液で除去する。保護層除去工程では、保護層の一部を除去して砥石部の保護層で覆われていた領域を露出させる。以下、本実施形態に係る電着砥石の製造方法について詳述する。 In the base removal process, a part of the base overlapping the grindstone is removed with a chemical solution. In the protective layer removing step, a part of the protective layer is removed to expose a region covered with the protective layer of the grindstone. Hereinafter, the manufacturing method of the electrodeposition grindstone concerning this embodiment is explained in full detail.
はじめに、アルミニウムを含む材料で形成された環状の基台に保護層を形成する保護層形成工程を実施する。図１は、保護層形成工程の概要を説明するための模式図である。なお、本実施形態では、電着によって形成される銅メッキ層を保護層として用いるが、基台を除去するための薬液に対して耐性のあるスズ、亜鉛、ニッケル等の材料で保護層を形成しても良い。 First, a protective layer forming step for forming a protective layer on an annular base made of a material containing aluminum is performed. FIG. 1 is a schematic diagram for explaining the outline of the protective layer forming step. In this embodiment, a copper plating layer formed by electrodeposition is used as a protective layer, but the protective layer is formed of a material such as tin, zinc, or nickel that is resistant to a chemical solution for removing the base. You may do it.
本実施形態に係る保護層形成工程では、まず、銅めっき液Ａで満たしためっき浴槽２を準備する。銅めっき液Ａとしては、例えば、シアン化銅や硝酸銅等の銅（イオン）を含む材料を溶解させた電解液が用いられる。ただし、銅めっき液Ａの構成や使用量等は任意に設定できる。
In the protective layer forming step according to the present embodiment, first, a plating
次に、基台４と銅電極６とをめっき浴槽２内の銅めっき液Ａに浸漬させる。基台４は、例えば、アルミニウム等の金属材料で円盤状（円環状）に形成されており、その表面には、後の砥石部形成工程で形成される砥石部の形状に対応したマスク４ａが設けられている。なお、本実施形態では、図１に示すように、外周部分において基台４の表面の一部が露出するマスク４ａを使用する。
Next, the
基台４は、スイッチ８を介して直流電源１０のマイナス端子（負極）に接続される。一方、銅電極６は、直流電源１０のプラス端子（正極）に接続される。ただし、スイッチ８は、銅電極６と直流電源１０との間に配置されても良い。
The
基台４と銅電極６とをめっき浴槽２内の銅めっき液Ａに浸漬させた後には、基台４を陰極、銅電極６を陽極として銅めっき液Ａに直流電流を流し、マスク４ａで覆われていない基台４の表面に保護層（銅メッキ層）を形成する。
After the
具体的には、図１に示すように、モータ等の回転駆動源１２でファン１４を回転させて銅めっき液Ａを攪拌しながら、基台４と直流電源１０との間に配置されたスイッチ８を短絡させる。これにより、マスク４ａで覆われていない基台４の表面に保護層（銅メッキ層）を形成できる。
Specifically, as shown in FIG. 1, a switch disposed between the
図２（Ａ）は、保護層形成工程後の基台４の状態を模式的に示す断面図であり、図２（Ｂ）は、図２（Ａ）に示す基台４の外周部分を拡大した断面図である。図２（Ａ）及び図２（Ｂ）に示すように、基台４の表面の一部に所望の厚さ（代表的には、１μｍ〜５μｍ、好ましくは、２μｍ〜３μｍ）の保護層（銅メッキ層）１６が形成されると、保護層形成工程は終了する。
2A is a cross-sectional view schematically showing the state of the
保護層形成工程の後には、基台４の表面に形成された保護層１６に重ねて砥石部を形成する砥石部形成工程を実施する。図３は、砥石部形成工程の概要を説明するための模式図である。本実施形態に係る砥石部形成工程では、まず、図３に示すように、ニッケルめっき液Ｂで満たしためっき浴槽２２を準備する。
After the protective layer forming step, a grindstone portion forming step is performed in which a grindstone portion is formed on the
ニッケルめっき液Ｂは、硫酸ニッケルや硝酸ニッケル等のニッケル（イオン）を含む材料を溶解させた電解液であり、ダイヤモンド等の砥粒が混入されている。なお、本実施形態では、硫酸ニッケルを２７０ｇ／Ｌ、塩化ニッケルを４５ｇ／Ｌ、ホウ酸を４０ｇ／Ｌ含むニッケルめっき液Ｂ（ワット浴）を６Ｌ使用する。ただし、ニッケルめっき液Ｂの構成や使用量等は任意に設定できる。 The nickel plating solution B is an electrolytic solution in which a material containing nickel (ions) such as nickel sulfate and nickel nitrate is dissolved, and abrasive grains such as diamond are mixed therein. In this embodiment, 6 L of nickel plating solution B (Watt bath) containing 270 g / L of nickel sulfate, 45 g / L of nickel chloride, and 40 g / L of boric acid is used. However, the configuration and amount of use of the nickel plating solution B can be arbitrarily set.
このニッケルめっき液Ｂには、図３に示すように、多孔質化を促進するための添加剤Ｃがさらに添加される。添加剤Ｃとしては、アルキル基、アリール基、アラルキル基等の疎水性基を有する水溶性のアンモニウム化合物を含むものを用いることが好ましい。 As shown in FIG. 3, an additive C for promoting porosity is further added to the nickel plating solution B. As the additive C, it is preferable to use an additive C containing a water-soluble ammonium compound having a hydrophobic group such as an alkyl group, an aryl group, or an aralkyl group.
アルキル基としては、例えば、メチル、エチル、ｎ−プロピル、イソプロピル、ｎ−ブチル、イソブチル、ｓｅｃ−ブチル、ｔｅｒｔ−ブチル、ペンチル、ヘキシル、ヘプチル、オクチル、ノニル、デシル、ウンデシル、ドデシル、トリデシル、テトラデシル、ペンタデシル、ヘキサデシル、ヘプタデシル、オクタデシル等の直鎖又は分枝を有する炭素数が１〜２０のアルキル基を挙げることができる。 Examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl , Pentadecyl, hexadecyl, heptadecyl, octadecyl and the like, and straight chain or branched alkyl groups having 1 to 20 carbon atoms.
アリール基としては、例えば、フェニル基、ナフチル基等を挙げることができる。また、アリール基には、フッ素原子、塩素原子等のハロゲン原子、メチル、エチル等のアルキル基、トリフルオロメチル等のハロアルキル基、メトキシ、エトキシ等のアルコキシ基、フェニル等のアリール基等の置換基が結合していてもよい。 Examples of the aryl group include a phenyl group and a naphthyl group. In addition, the aryl group includes a substituent such as a halogen atom such as a fluorine atom and a chlorine atom, an alkyl group such as methyl and ethyl, a haloalkyl group such as trifluoromethyl, an alkoxy group such as methoxy and ethoxy, and an aryl group such as phenyl. May be combined.
アラルキル基としては、例えば、２−フェニルエチル、ベンジル、１−フェニルエチル、３−フェニルプロピル、４−フェニルブチル等の炭素数が７〜１０のアラルキル基等を挙げることができる。アラルキル基には、アリール基と同様の置換基が結合していても良い。 Examples of the aralkyl group include aralkyl groups having 7 to 10 carbon atoms such as 2-phenylethyl, benzyl, 1-phenylethyl, 3-phenylpropyl, 4-phenylbutyl, and the like. A substituent similar to the aryl group may be bonded to the aralkyl group.
アンモニウム化合物としては、ドデシルトリメチルアンモニウムクロライド、テトラデシルトリメチルアンモニウムクロライド、ヘキサデシルトリメチルアンモニウムクロライド、オクタデシルトリメチルアンモニウムクロライド、フェニルトリメチルアンモニウムクロライド、ベンジルトリメチルアンモニウムクロライド、ベンジルトリエチルアンモニウムクロライド、ベンジルトリブチルアンモニウムクロライド、ジデシルジメチルアンモニウムクロライド、ドデシルジメチルベンジルアンモニウムクロライド、テトラデシルジメチルベンジルアンモニウムクロライド、オクタデシルジメチルベンジルアンモニウムクロライド、トリオクチルメチルアンモニウムクロライド、ドデシルピリジニウムクロライド、ベンジルピリジニウムクロライド、これらの臭化物、硫酸塩等を挙げることができる。なお、これらのアンモニウム化合物は、単独で用いても良いし、２種類以上を混合して用いても良い。 As ammonium compounds, dodecyltrimethylammonium chloride, tetradecyltrimethylammonium chloride, hexadecyltrimethylammonium chloride, octadecyltrimethylammonium chloride, phenyltrimethylammonium chloride, benzyltriethylammonium chloride, benzyltriethylammonium chloride, benzyltributylammonium chloride, didecyldimethyl Ammonium chloride, dodecyldimethylbenzylammonium chloride, tetradecyldimethylbenzylammonium chloride, octadecyldimethylbenzylammonium chloride, trioctylmethylammonium chloride, dodecylpyridinium chloride, benzylpyridinium chloride Id, these bromides, may be mentioned sulfates. In addition, these ammonium compounds may be used independently and may be used in mixture of 2 or more types.
本実施形態では、添加剤Ｃとして奥野製薬工業株式会社製の「トップポーラスニッケルＲＳＮ」を用い、ニッケルめっき液Ｂに対して１ｍＬ/Ｌ以上１０ｍＬ/Ｌ以下となるように添加する。 In the present embodiment, “Top Porous Nickel RSN” manufactured by Okuno Pharmaceutical Co., Ltd. is used as the additive C and added to the nickel plating solution B so as to be 1 mL / L or more and 10 mL / L or less.
次に、マスク４ａ及び保護層１６が形成された基台４とニッケル電極２６とをめっき浴槽２２内のニッケルめっき液Ｂに浸漬させる。マスク４ａとしては、保護層形成工程で使用したマスク４ａをそのまま使用できる。もちろん、保護層形成工程の後に新たなマスクを形成しても良い。
Next, the
基台４は、スイッチ２８を介して直流電源３０のマイナス端子（負極）に接続される。一方、ニッケル電極２６は、直流電源３０のプラス端子（正極）に接続される。ただし、スイッチ２８は、ニッケル電極２６と直流電源３０との間に配置されても良い。
The
基台４とニッケル電極２６とをめっき浴槽２２内のニッケルめっき液Ｂに浸漬させた後には、基台４を陰極、ニッケル電極２６を陽極としてニッケルめっき液Ｂに直流電流を流し、マスク４ａで覆われていない領域（すなわち、銅めっき層１６に重なる領域）に砥粒及びめっき層を堆積させて砥石部を形成する。
After the
具体的には、図３に示すように、モータ等の回転駆動源３２でファン３４を回転させてニッケルめっき液Ｂを攪拌しながら、基台４と直流電源３０との間に配置されたスイッチ２８を短絡させる。これにより、多孔性構造のニッケルめっき層中に砥粒が概ね均等に分散された砥石部を形成できる。
Specifically, as shown in FIG. 3, a switch disposed between the
図４（Ａ）は、砥石部形成工程後の基台４の状態を模式的に示す断面図であり、図４（Ｂ）は、図４（Ａ）に示す基台４の外周部分を拡大した断面図である。図４（Ａ）及び図４（Ｂ）に示すように、保護層１６に重なる所望の厚さの砥石部３６が形成されると、砥石部形成工程は終了する。
4A is a cross-sectional view schematically showing the state of the
砥石部形成工程の後には、砥石部３６に重なる基台４の一部を薬液で除去する基台除去工程を実施する。図５（Ａ）は、基台除去工程後の基台４の状態を模式的に示す断面図であり、図５（Ｂ）は、図５（Ａ）に示す基台４の外周部分を拡大した断面図である。なお、図５（Ａ）及び図５（Ｂ）に示すように、基台除去工程を実施する前には、砥石部形成工程で使用したマスク４ａを除去しておく。
After the grinding wheel portion forming step, a base removing step is performed in which a part of the
基台除去工程では、基台４の外周部分に薬液（エッチング用の薬液）を作用させて、図５（Ａ）及び図５（Ｂ）に示すように、基台４の外周部分の一部を除去する。薬液としては、例えば、アルミニウムを溶解する水酸化ナトリウム溶液等を用いることができる。これにより、基台４で覆われていた保護層１６の一部が露出する。
In the base removal process, a chemical solution (chemical solution for etching) is allowed to act on the outer peripheral portion of the
なお、本実施形態では、基台４と砥石部３６との間に保護層１６を設けているので、上述した薬液が多孔性構造のニッケルめっき層（砥石部３６）を通過しても、この通過した薬液によって基台４が除去されることはない。つまり、基台４の砥石部３６を保持する部分が薬液で侵されずに済むので、砥石部３６の脱落等の不良を防止できる。
In this embodiment, since the
基台除去工程の後には、保護層１６の一部を除去して、砥石部３６の保護層１６で覆われていた領域を露出させる保護層除去工程を実施する。図６（Ａ）は、保護層除去工程後の基台４の状態を模式的に示す断面図であり、図６（Ｂ）は、図６（Ａ）に示す基台４の外周部分を拡大した断面図である。
After the base removing process, a part of the
保護層除去工程では、例えば、基台除去工程を経て露出した保護層１６に薬液（エッチング用の薬液）を作用させて、図６（Ａ）及び図６（Ｂ）に示すように、保護層１６の一部を除去する。薬液としては、例えば、銅を溶解する硫酸アンモニウム溶液等を用いることができる。これにより、保護層１６で覆われていた砥石部３６の一部が露出する。
In the protective layer removing step, for example, a chemical solution (chemical solution for etching) is allowed to act on the
なお、本実施形態の保護層除去工程では、薬液を作用させて保護層１６を除去しているが、保護層１６を他の方法で除去することもできる。例えば、ドレッシング用のボード等に砥石部３６を切り込ませることで、保護層１６の一部を削り取るように除去することができる。
In the protective layer removing step of the present embodiment, the
図７は、完成した電着砥石を模式的に示す斜視図である。上述の手順により、円盤状の基台４の外周部分に円環状の砥石部３６が固定されたハブタイプの電着砥石１が完成する。
FIG. 7 is a perspective view schematically showing the completed electrodeposition grindstone. By the above-described procedure, the hub type electrodeposition grindstone 1 in which the
なお、本発明は上記実施形態の記載に限定されず、種々変更して実施可能である。例えば、上記実施形態では、ニッケルめっき液Ｂに添加剤Ｃを添加する方法で、多孔性構造のニッケルめっき層に砥粒が分散された砥石部３６を形成しているが、他の方法で砥石部３６を形成しても良い。
In addition, this invention is not limited to description of the said embodiment, A various change can be implemented. For example, in the above embodiment, the
また、上記実施形態では、砥石部３６の全体に重なる保護層１６を形成しているが、例えば、基台除去工程で除去される基台４の一部と砥石部３６との間で保護層１６を省略することもできる。このように、基台除去工程で除去される基台４の一部と砥石部３６との間に保護層１６を形成しない場合には、基台除去工程の後に除去すべき保護層１６が存在しないので、保護層除去工程を省略できる。
Moreover, in the said embodiment, although the
その他、上記実施形態に係る構造、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 In addition, the structure, method, and the like according to the above-described embodiment can be appropriately modified and implemented without departing from the scope of the object of the present invention.
２ めっき浴槽
４ 基台
４ａ マスク
６ 銅電極
８ スイッチ
１０ 直流電源
１２ 回転駆動源
１４ ファン
１６ 保護層（銅メッキ層）
２２ めっき浴槽
２６ ニッケル電極
２８ スイッチ
３０ 直流電源
３２ 回転駆動源
３４ ファン
３６ 砥石部
１ 電着砥石
Ａ 銅めっき液
Ｂ ニッケルめっき液
Ｃ 添加剤
2 plating
22
Claims (4)
アルミニウムを含む材料で形成された環状の基台に、多孔性構造のめっき層と該めっき層に分散された砥粒とでなる砥石部を形成する砥石部形成工程と、
該砥石部に重なる該基台の一部に薬液を作用させて、該基台の一部を除去する基台除去工程と、
該砥石部形成工程の前に、該めっき層を通過した該薬液から該基台を保護するための保護層を該基台の表面に形成する保護層形成工程と、を備えることを特徴とする電着砥石の製造方法。 A method for producing an electrodeposited grindstone,
A grindstone portion forming step for forming a grindstone portion composed of a porous structure plating layer and abrasive grains dispersed in the plating layer on an annular base formed of a material containing aluminum,
A base removing step of removing a part of the base by causing a chemical solution to act on a part of the base overlapping the grindstone part;
A protective layer forming step for forming a protective layer for protecting the base from the chemical solution that has passed through the plating layer on the surface of the base before the grinding wheel portion forming step. A method for producing an electrodeposited whetstone.
前記基台除去工程では、前記薬液として水酸化ナトリウム溶液を用いて前記基台の一部を除去し、
前記保護層除去工程では、前記基台で覆われていた前記保護層の一部に硫酸アンモニウム溶液を作用させて該保護層の一部を除去することを特徴とする請求項３記載の電着砥石の製造方法。 In the protective layer forming step, the protective layer is formed of a material containing copper,
In the base removal step, a part of the base is removed using a sodium hydroxide solution as the chemical solution,
4. The electrodeposition grindstone according to claim 3, wherein in the protective layer removing step, an ammonium sulfate solution is allowed to act on a part of the protective layer covered with the base to remove a part of the protective layer. Manufacturing method.
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| JP2015220769A JP2017087353A (en) | 2015-11-10 | 2015-11-10 | Method for production of electro-deposited grind stone |
| TW105132589A TW201718182A (en) | 2015-11-10 | 2016-10-07 | Manufacturing method for electrodeposited grindstone capable of producing a self-sharpening effect even when a hard cut material such as a sapphire substrate is processed |
| CN201610952548.5A CN106944940A (en) | 2015-11-10 | 2016-11-02 | The manufacture method of electro-deposition grinding tool |
| KR1020160145758A KR20170054994A (en) | 2015-11-10 | 2016-11-03 | Method of manufacturing electrodeposition grinding wheel |
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| JP2015220769A JP2017087353A (en) | 2015-11-10 | 2015-11-10 | Method for production of electro-deposited grind stone |
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| JP2020151835A (en) * | 2019-03-22 | 2020-09-24 | 株式会社ディスコ | Manufacturing method for annular grindstone |
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| JP7034547B2 (en) * | 2018-02-02 | 2022-03-14 | 株式会社ディスコ | An annular grindstone and a method for manufacturing an annular grindstone |
| JP7098231B2 (en) * | 2018-02-27 | 2022-07-11 | 株式会社ディスコ | Electroplated whetstone |
| JP7094622B2 (en) * | 2018-03-29 | 2022-07-04 | 株式会社ディスコ | Circular whetstone |
| CN108581865A (en) * | 2018-03-30 | 2018-09-28 | 郑州磨料磨具磨削研究所有限公司 | A kind of blade exposure method of hub type plating superthin diamond cutting blade |
| CN108747867A (en) * | 2018-04-24 | 2018-11-06 | 华侨大学 | A kind of micro mist diamond abrasive tool realizes the uniformly distributed experimental provision of abrasive grain in preparing |
| CN109352542B (en) * | 2018-11-15 | 2020-12-29 | 娄底市安地亚斯电子陶瓷有限公司 | Diamond grinding tool and preparation method thereof |
| CN109825860A (en) * | 2018-11-28 | 2019-05-31 | 娄底市安地亚斯电子陶瓷有限公司 | A kind of preparation method of the skive of grinding material sequential arrangement |
| JP7408232B2 (en) * | 2019-06-11 | 2024-01-05 | 株式会社ディスコ | Manufacturing method of circular grindstone |
| CN115874246A (en) * | 2022-12-30 | 2023-03-31 | 长沙岱勒新材料科技股份有限公司 | Sand feeding method for preparing annular diamond wire saw and annular diamond wire saw |
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| KR20170054994A (en) | 2017-05-18 |
| CN106944940A (en) | 2017-07-14 |
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