JP2017034028A5 - - Google Patents
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- Publication number
- JP2017034028A5 JP2017034028A5 JP2015150723A JP2015150723A JP2017034028A5 JP 2017034028 A5 JP2017034028 A5 JP 2017034028A5 JP 2015150723 A JP2015150723 A JP 2015150723A JP 2015150723 A JP2015150723 A JP 2015150723A JP 2017034028 A5 JP2017034028 A5 JP 2017034028A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- field relaxation
- type field
- type
- electron multiplication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000031700 light absorption Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015150723A JP6507912B2 (ja) | 2015-07-30 | 2015-07-30 | 半導体受光素子 |
| US15/054,841 US10079324B2 (en) | 2015-07-30 | 2016-02-26 | Semiconductor light-receiving device |
| CN201610617954.6A CN106409966B (zh) | 2015-07-30 | 2016-07-29 | 半导体受光元件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015150723A JP6507912B2 (ja) | 2015-07-30 | 2015-07-30 | 半導体受光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017034028A JP2017034028A (ja) | 2017-02-09 |
| JP2017034028A5 true JP2017034028A5 (OSRAM) | 2018-03-29 |
| JP6507912B2 JP6507912B2 (ja) | 2019-05-08 |
Family
ID=57882981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015150723A Active JP6507912B2 (ja) | 2015-07-30 | 2015-07-30 | 半導体受光素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10079324B2 (OSRAM) |
| JP (1) | JP6507912B2 (OSRAM) |
| CN (1) | CN106409966B (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102868049B1 (ko) * | 2020-02-03 | 2025-10-01 | 삼성전자주식회사 | 적외선 검출 소자 및 이를 포함하는 적외선 검출 시스템 |
| US20230420595A1 (en) * | 2020-12-04 | 2023-12-28 | Hamamatsu Photonics K.K. | Semiconductor light reception element |
| JP7024918B1 (ja) * | 2021-01-21 | 2022-02-24 | 三菱電機株式会社 | アバランシェフォトダイオード |
| WO2025134267A1 (ja) * | 2023-12-20 | 2025-06-26 | 三菱電機株式会社 | 半導体受光素子、光回線終端装置、多値強度変調送受信装置、デジタルコヒーレント受信装置、光ファイバ無線システム、spadセンサーシステム、及びライダー装置 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5771191A (en) * | 1980-10-21 | 1982-05-01 | Fujitsu Ltd | Photosemiconductor element |
| US5171707A (en) * | 1990-09-13 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions |
| US5212395A (en) | 1992-03-02 | 1993-05-18 | At&T Bell Laboratories | P-I-N photodiodes with transparent conductive contacts |
| JPH0730185A (ja) | 1993-07-07 | 1995-01-31 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
| JPH0883904A (ja) | 1994-09-14 | 1996-03-26 | Toshiba Corp | 電界効果トランジスタ |
| US5771256A (en) * | 1996-06-03 | 1998-06-23 | Bell Communications Research, Inc. | InP-based lasers with reduced blue shifts |
| JPH10247727A (ja) | 1997-03-05 | 1998-09-14 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ |
| JP3705013B2 (ja) * | 1999-05-24 | 2005-10-12 | 日本電気株式会社 | 半導体素子 |
| JP3470065B2 (ja) | 1999-07-01 | 2003-11-25 | 日本電信電話株式会社 | 半導体集積回路とその製造方法 |
| JP3689621B2 (ja) * | 2000-09-04 | 2005-08-31 | シャープ株式会社 | 半導体発光素子 |
| US6839491B2 (en) * | 2000-12-21 | 2005-01-04 | Xponent Photonics Inc | Multi-layer dispersion-engineered waveguides and resonators |
| JP4072937B2 (ja) * | 2001-05-11 | 2008-04-09 | 日本電信電話株式会社 | 半導体光素子 |
| TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| EP1436931B1 (en) * | 2001-10-09 | 2005-12-28 | Infinera Corporation | Digital optical network architecture |
| WO2004055900A1 (ja) * | 2002-12-16 | 2004-07-01 | Japan Science And Technology Agency | 不均一な量子ドットを有する半導体積層構造、それを用いた発光ダイオード、半導体レーザダイオード及び半導体光増幅器並びにそれらの製造方法 |
| US20050189552A1 (en) * | 2003-12-26 | 2005-09-01 | Nobuyuki Ikoma | Semiconductor light-emitting device |
| JP4306508B2 (ja) * | 2004-03-29 | 2009-08-05 | 三菱電機株式会社 | アバランシェフォトダイオード |
| JP4370203B2 (ja) | 2004-05-25 | 2009-11-25 | 三菱電機株式会社 | 半導体素子 |
| JP2006040919A (ja) * | 2004-07-22 | 2006-02-09 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
| JP5433948B2 (ja) | 2006-01-30 | 2014-03-05 | 日本電気株式会社 | 半導体受光素子 |
| US20070284614A1 (en) * | 2006-05-24 | 2007-12-13 | Ilesanmi Adesida | Ohmic contacts for semiconductor devices |
| US20080023726A1 (en) * | 2006-05-24 | 2008-01-31 | Ilesanmi Adesida | Schottky gate metallization for semiconductor devices |
| US8124959B2 (en) * | 2007-06-28 | 2012-02-28 | Intel Corporation | High hole mobility semiconductor device |
| US8030684B2 (en) * | 2007-07-18 | 2011-10-04 | Jds Uniphase Corporation | Mesa-type photodetectors with lateral diffusion junctions |
| US7795064B2 (en) * | 2007-11-14 | 2010-09-14 | Jds Uniphase Corporation | Front-illuminated avalanche photodiode |
| JP2009252769A (ja) * | 2008-04-01 | 2009-10-29 | Nec Corp | 半導体受光素子 |
| JP5555036B2 (ja) * | 2009-04-15 | 2014-07-23 | 住友化学株式会社 | 半導体基板の電気的特性の測定方法 |
| JP5942068B2 (ja) | 2010-01-25 | 2016-06-29 | アイアールスペック株式会社 | 化合物半導体受光素子アレイ |
| JP5100881B1 (ja) * | 2011-11-07 | 2012-12-19 | 古河電気工業株式会社 | 集積型半導体レーザ素子 |
| JP2013236012A (ja) * | 2012-05-10 | 2013-11-21 | Mitsubishi Electric Corp | アバランシェフォトダイオード及びその製造方法 |
| GB2504977B (en) * | 2012-08-16 | 2017-10-04 | Airbus Defence & Space Gmbh | Laser power converter |
| US20140339501A1 (en) * | 2013-05-16 | 2014-11-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices |
| TW201504599A (zh) * | 2013-05-30 | 2015-02-01 | Univ California | 具有高對比光柵及可作爲雙重用途之高對比光柵垂直腔表面發射雷射檢測器之二維週期結構的極化無關光檢測器 |
| US9337622B2 (en) * | 2014-07-18 | 2016-05-10 | Wisconsin Alumni Research Foundation | Compact distributed bragg reflectors |
-
2015
- 2015-07-30 JP JP2015150723A patent/JP6507912B2/ja active Active
-
2016
- 2016-02-26 US US15/054,841 patent/US10079324B2/en active Active
- 2016-07-29 CN CN201610617954.6A patent/CN106409966B/zh active Active
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