JP2016540337A5 - - Google Patents

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Publication number
JP2016540337A5
JP2016540337A5 JP2016536942A JP2016536942A JP2016540337A5 JP 2016540337 A5 JP2016540337 A5 JP 2016540337A5 JP 2016536942 A JP2016536942 A JP 2016536942A JP 2016536942 A JP2016536942 A JP 2016536942A JP 2016540337 A5 JP2016540337 A5 JP 2016540337A5
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JP
Japan
Prior art keywords
address
refresh
weak
equal
refreshing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2016536942A
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English (en)
Japanese (ja)
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JP6178516B2 (ja
JP2016540337A (ja
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Publication date
Priority claimed from US14/276,452 external-priority patent/US9230634B2/en
Application filed filed Critical
Publication of JP2016540337A publication Critical patent/JP2016540337A/ja
Publication of JP2016540337A5 publication Critical patent/JP2016540337A5/ja
Application granted granted Critical
Publication of JP6178516B2 publication Critical patent/JP6178516B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016536942A 2013-12-09 2014-11-20 ネクストビット表を用いたメモリセルのためのリフレッシュ方式 Expired - Fee Related JP6178516B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361913788P 2013-12-09 2013-12-09
US61/913,788 2013-12-09
US14/276,452 US9230634B2 (en) 2013-12-09 2014-05-13 Refresh scheme for memory cells with next bit table
US14/276,452 2014-05-13
PCT/US2014/066726 WO2015088740A1 (en) 2013-12-09 2014-11-20 Refresh scheme for memory cells with next bit table

Publications (3)

Publication Number Publication Date
JP2016540337A JP2016540337A (ja) 2016-12-22
JP2016540337A5 true JP2016540337A5 (enExample) 2017-07-13
JP6178516B2 JP6178516B2 (ja) 2017-08-09

Family

ID=53271839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016536942A Expired - Fee Related JP6178516B2 (ja) 2013-12-09 2014-11-20 ネクストビット表を用いたメモリセルのためのリフレッシュ方式

Country Status (6)

Country Link
US (1) US9230634B2 (enExample)
EP (1) EP3055864B1 (enExample)
JP (1) JP6178516B2 (enExample)
KR (1) KR101766875B1 (enExample)
CN (1) CN105814639A (enExample)
WO (1) WO2015088740A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640242B1 (en) * 2015-12-02 2017-05-02 Qualcomm Incorporated System and method for temperature compensated refresh of dynamic random access memory
US10754988B2 (en) * 2016-08-30 2020-08-25 Winbond Electronics Corporation Anti-rollback version upgrade in secured memory chip
KR20180049314A (ko) * 2016-10-31 2018-05-11 에스케이하이닉스 주식회사 어드레스 카운팅 회로, 메모리 장치 및 메모리 장치의 동작 방법
KR20180136611A (ko) 2017-06-14 2018-12-26 에스케이하이닉스 주식회사 반도체장치
KR20220048857A (ko) 2020-10-13 2022-04-20 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
CN118351907A (zh) * 2023-01-09 2024-07-16 长鑫存储技术有限公司 一种刷新电路、方法及存储器
CN119864062B (zh) * 2023-10-19 2025-10-03 长鑫科技集团股份有限公司 刷新防护电路及存储器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644545A (en) * 1996-02-14 1997-07-01 United Memories, Inc. Bimodal refresh circuit and method for using same to reduce standby current and enhance yields of dynamic memory products
US7020038B2 (en) 2004-05-05 2006-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Efficient refresh operation for semiconductor memory devices
KR20110030779A (ko) * 2009-09-18 2011-03-24 삼성전자주식회사 메모리 장치, 이를 구비하는 메모리 시스템 및 이의 제어 방법
KR101879442B1 (ko) * 2011-05-25 2018-07-18 삼성전자주식회사 휘발성 메모리 장치의 리프레쉬 방법, 리프레쉬 어드레스 생성기 및 휘발성 메모리 장치
DE102012203610A1 (de) 2011-05-25 2012-11-29 Samsung Electronics Co., Ltd. Verfahren zum Auffrischen eines Speicherbauelements, Auffrisch-adressengenerator und Speicherbauelement
US8971094B2 (en) 2011-09-16 2015-03-03 Inphi Corporation Replacement of a faulty memory cell with a spare cell for a memory circuit
KR20130078455A (ko) * 2011-12-30 2013-07-10 삼성전자주식회사 메모리 특성 정보를 저장하는 반도체 메모리 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 반도체 메모리 장치의 동작방법
KR101966858B1 (ko) 2012-04-24 2019-04-08 삼성전자주식회사 휘발성 메모리 장치의 동작 방법, 휘발성 메모리 장치 및 메모리 시스템의 제어 방법
KR101975029B1 (ko) * 2012-05-17 2019-08-23 삼성전자주식회사 리프레쉬 주기를 조절하는 반도체 메모리 장치, 메모리 시스템 및 그 동작방법
KR101977665B1 (ko) * 2012-07-12 2019-08-28 삼성전자주식회사 리프레쉬 주기를 조절하는 반도체 메모리 장치, 메모리 시스템 및 그 동작방법

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