JP2016522529A - 熱アシスト磁気記録のための近接場トランスデューサ - Google Patents
熱アシスト磁気記録のための近接場トランスデューサ Download PDFInfo
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- JP2016522529A JP2016522529A JP2016518330A JP2016518330A JP2016522529A JP 2016522529 A JP2016522529 A JP 2016522529A JP 2016518330 A JP2016518330 A JP 2016518330A JP 2016518330 A JP2016518330 A JP 2016518330A JP 2016522529 A JP2016522529 A JP 2016522529A
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- ceramic
- plasmonic
- plasmonic material
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- field transducer
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
- G11B5/314—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
- G11B5/6088—Optical waveguide in or on flying head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
- G11B5/4866—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives the arm comprising an optical waveguide, e.g. for thermally-assisted recording
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/831—Of specified ceramic or electrically insulating compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Abstract
Description
本出願は、2013年6月7日に出願された米国特許仮出願第61/832,689号および2014年2月13日に出願された米国特許仮出願第61/939,563号に基づく優先権を主張するものであり、これらの文献はその全体が参照により本明細書に組み込まれる。
本明細書において「セラミック材料」または「セラミックプラズモニック材料」は、金属および/または非金属の化合物と定義され、このような化合物として、金属窒化物、金属炭化物、金属ホウ化物、金属ケイ化物および金属酸化物が挙げられるが、これらに限定されない。特に、格子間侵入型セラミック材料および共有結合型セラミック材料は高耐熱性であることが知られており、熱アシスト磁気記録に必要とされる作動条件を満たすものである。本明細書に記載されているように、プラズモニック材料は、Au、Ag、Cu、またはAlなどの任意の元素で構成されていてもよい。あるいは、プラズモニック材料は、セラミック材料、すなわち二元素または三元素からなる不定比化合物で構成されていてもよく、二元素からなる不定比化合物としては、TiNx、ZrNx、HfNx、TaNx、VNx、TiSi2−x(式中、xおよびyは0〜1である)が挙げられ、三元素からなる不定比化合物としては、TiAlxNyおよびTiZrxNy(式中、xおよびyは0〜1である)が挙げられるが、これらに限定されない。
Claims (20)
- 熱アシスト磁気記録のための近接場トランスデューサ(NFT)と、光を照射することによって該近接場トランスデューサを加熱するための光源とを含み、NFTが1以上のセラミックプラズモニック材料とキャップ層とを含むことを特徴とする装置。
- 前記1以上のセラミックプラズモニック材料が、TiNx、ZrNx、HfNx、TaNx、VNx、TiSi2−x、TiAlxNy、TiZrxNy(式中、「x」および「y」は0〜1である)およびこれらの組合せなどの、金属窒化物、金属ホウ化物、金属酸化物、および金属炭化物を含むことを特徴とする、請求項1に記載の装置。
- 前記1以上のセラミックプラズモニック材料が、式AxBy(式中、AおよびBは任意の2種の金属であり、「x」および「y」は0〜1である)を有する金属間化合物を含むことを特徴とする、請求項1に記載の装置。
- 前記セラミックプラズモニック材料が、高耐熱性プラズモニック材料であり、該高耐熱性プラズモニック材料が熱源としてかつ磁気層を直接加熱するための磁場増強部材として機能することを特徴とする、請求項1に記載の装置。
- 前記セラミックプラズモニック材料が100℃を超える温度に耐えることを特徴とする、請求項1に記載の装置。
- 前記セラミックプラズモニック材料が100℃を超える温度で焼結されることを特徴とする、請求項1に記載の装置。
- 誘電性材料を含む第2のキャップ層をさらに含み、該第2のキャップ層が前記NFTのセラミックプラズモニック材料を被覆していることを特徴とする、請求項1に記載の装置。
- 前記近接場トランスデューサのプラズモニック材料が、不活性ガス環境に密閉されていることを特徴とする、請求項1に記載の装置。
- 前記キャップ層が酸化バリアであることを特徴とする、請求項1に記載の装置。
- 前記キャップ層の厚さが0.1〜25nmであることを特徴とする、請求項1に記載の装置。
- 前記光源と前記セラミックプラズモニック材料との間にセラミックプラズモン導波路部分をさらに含むことを特徴とする、請求項1に記載の装置。
- 前記導波路部分がテーパ状誘電性導波路であることを特徴とする、請求項11に記載の装置。
- 前記導波路部分がキャップ層をさらに含むことを特徴とする、請求項11に記載の装置。
- データ保存のために局在表面プラズモン共鳴(LSPR)を用いて熱アシスト磁気記録を行う方法であって、
導波路を通して、セラミックプラズモニック材料からなるナノ構造体端部と該セラミック材料を被覆する誘電性材料からなる保護層とを含む近接場トランスデューサへと光線を送ること、
該ナノ構造体端部において、表面プラズモンにより局所加熱を発生させること、および
該近接場トランスデューサの加熱された端部と記録ディスクとの間に空気潤滑面を介してインターフェースを形成させることにより、磁気記録を可能とすること
を含む方法。 - 前記セラミック化合物が、TiNx、ZrNx、HfNx、TaNx、VNx、TiSi2−x、TiAlxNy、TiZrxNy(式中、「x」および「y」は0〜1である)またはこれらの組合せ(ただし、これらに限定されない)などの、窒化物、酸化物、ホウ化物、および炭化物を含むことを特徴とする、請求項14に記載の方法。
- 100℃を超える温度で前記ナノ構造体端部を焼結することをさらに含む、請求項14に記載の方法。
- 前記局所加熱の作動機構が照射熱の集束であることを特徴とする、請求項14に記載の方法。
- 前記局所加熱の作動機構がナノスケール伝導加熱であることを特徴とする、請求項14に記載の方法。
- 前記局所加熱の作動機構が光閉じ込めであることを特徴とする、請求項14に記載の方法。
- 前記局所加熱の作動機構が、照射熱の集束、ナノスケール伝導加熱、および光閉じ込めの3つすべての組合せであることを特徴とする、請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361832689P | 2013-06-07 | 2013-06-07 | |
US61/832,689 | 2013-06-07 | ||
US201461939563P | 2014-02-13 | 2014-02-13 | |
US61/939,563 | 2014-02-13 | ||
PCT/US2014/038561 WO2014197190A1 (en) | 2013-06-07 | 2014-05-19 | Near field transducer for heat-assisted magnetic recording |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016522529A true JP2016522529A (ja) | 2016-07-28 |
JP6310069B2 JP6310069B2 (ja) | 2018-04-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016518330A Expired - Fee Related JP6310069B2 (ja) | 2013-06-07 | 2014-05-19 | 熱アシスト磁気記録のための近接場トランスデューサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9343088B2 (ja) |
EP (1) | EP3005367A4 (ja) |
JP (1) | JP6310069B2 (ja) |
WO (1) | WO2014197190A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9548076B2 (en) * | 2013-11-08 | 2017-01-17 | Seagate Technology Llc | Magnetic devices with overcoats |
US9741381B1 (en) | 2015-05-28 | 2017-08-22 | Seagate Technology Llc | Near field transducers (NFTs) including a protective layer and methods of forming |
US9460738B1 (en) * | 2015-07-13 | 2016-10-04 | HGST Netherlands B.V. | Method to coat NFT area with highly thermal conducting material in HAMR structure |
US9947346B2 (en) | 2016-03-30 | 2018-04-17 | Western Digital Technologies, Inc. | Using window underlayer structures to protect near field transducers on heat assisted magnetic recording heads |
US10468059B1 (en) | 2018-10-10 | 2019-11-05 | Western Digital Technologies, Inc. | Slider with multiple-channel air-bearing surface |
US10629236B1 (en) | 2018-11-12 | 2020-04-21 | Western Digital Technologies, Inc. | Slider gas-bearing surface designs to mitigate effects of smear in heat-assisted magnetic recording |
CN110387040A (zh) * | 2019-07-17 | 2019-10-29 | 中国科学院上海硅酸盐研究所 | 一种黑色聚酰亚胺膜 |
US11532329B1 (en) * | 2022-01-31 | 2022-12-20 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording (HAMR) head with main pole having recess for plasmonic material |
US11894018B1 (en) | 2022-08-20 | 2024-02-06 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording (HAMR) head with main pole having narrow plasmonic recess |
Citations (8)
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JPH04364217A (ja) * | 1990-12-27 | 1992-12-16 | Internatl Business Mach Corp <Ibm> | 保護被膜を有する磁気ヘッドスライダ及びその製造方法 |
JPH103630A (ja) * | 1996-06-14 | 1998-01-06 | Nec Corp | 薄膜磁気ヘッド及びその製造方法 |
JP2004213824A (ja) * | 2003-01-08 | 2004-07-29 | Shimadzu Corp | 磁気ヘッド用保護膜および保護膜形成方法 |
JP2007193880A (ja) * | 2006-01-18 | 2007-08-02 | Hitachi Maxell Ltd | ディスク記録再生装置 |
JP2009043338A (ja) * | 2007-08-08 | 2009-02-26 | Sharp Corp | 熱アシスト情報記録装置および熱アシスト情報記録方法 |
JP2009295203A (ja) * | 2008-06-02 | 2009-12-17 | Seiko Instruments Inc | 記録再生ヘッド及び情報記録再生装置 |
US20110205863A1 (en) * | 2010-02-23 | 2011-08-25 | Seagate Technology Llc | HAMR NFT Materials With Improved Thermal Stability |
JP2013229094A (ja) * | 2012-04-24 | 2013-11-07 | Seagate Technology Llc | 近接場トランスデューサを備える装置、エネルギ源と導波路と近接場トランスデューサとを備える装置およびディスクドライブ |
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US8451555B2 (en) * | 2009-02-24 | 2013-05-28 | Seagate Technology Llc | Recording head for heat assisted magnetic recording |
US8089830B2 (en) * | 2009-05-13 | 2012-01-03 | Tdk Corporation | Near-field light generating device including near-field light generating element with edge part opposed to waveguide |
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US8268461B1 (en) | 2011-03-16 | 2012-09-18 | Hitachi Global Storage Technologies Netherlands B.V. | Patterned perpendicular magnetic recording medium with ultrathin oxide film and reduced switching field distribution |
US8619512B1 (en) * | 2012-06-22 | 2013-12-31 | Western Digital (Fremont), Llc | Stress buffer for near-field transducer in energy assisted magnetic recording and methods for fabricating the same |
US20140233361A1 (en) * | 2013-02-21 | 2014-08-21 | Tdk Corporation | Thermally-assisted magnetic recording head and method of manufacturing the same |
US20140376340A1 (en) * | 2013-06-24 | 2014-12-25 | Seagate Technology Llc | Peg only near-field transducer |
-
2014
- 2014-05-19 EP EP14807734.0A patent/EP3005367A4/en not_active Withdrawn
- 2014-05-19 JP JP2016518330A patent/JP6310069B2/ja not_active Expired - Fee Related
- 2014-05-19 WO PCT/US2014/038561 patent/WO2014197190A1/en active Application Filing
- 2014-05-19 US US14/401,917 patent/US9343088B2/en active Active
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JPH04364217A (ja) * | 1990-12-27 | 1992-12-16 | Internatl Business Mach Corp <Ibm> | 保護被膜を有する磁気ヘッドスライダ及びその製造方法 |
JPH103630A (ja) * | 1996-06-14 | 1998-01-06 | Nec Corp | 薄膜磁気ヘッド及びその製造方法 |
JP2004213824A (ja) * | 2003-01-08 | 2004-07-29 | Shimadzu Corp | 磁気ヘッド用保護膜および保護膜形成方法 |
JP2007193880A (ja) * | 2006-01-18 | 2007-08-02 | Hitachi Maxell Ltd | ディスク記録再生装置 |
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JP2009295203A (ja) * | 2008-06-02 | 2009-12-17 | Seiko Instruments Inc | 記録再生ヘッド及び情報記録再生装置 |
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JP2013229094A (ja) * | 2012-04-24 | 2013-11-07 | Seagate Technology Llc | 近接場トランスデューサを備える装置、エネルギ源と導波路と近接場トランスデューサとを備える装置およびディスクドライブ |
Also Published As
Publication number | Publication date |
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US20150287425A1 (en) | 2015-10-08 |
WO2014197190A8 (en) | 2015-04-02 |
WO2014197190A1 (en) | 2014-12-11 |
EP3005367A4 (en) | 2016-05-25 |
US9343088B2 (en) | 2016-05-17 |
EP3005367A1 (en) | 2016-04-13 |
JP6310069B2 (ja) | 2018-04-11 |
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