JP2016512395A5 - - Google Patents
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- Publication number
- JP2016512395A5 JP2016512395A5 JP2016500578A JP2016500578A JP2016512395A5 JP 2016512395 A5 JP2016512395 A5 JP 2016512395A5 JP 2016500578 A JP2016500578 A JP 2016500578A JP 2016500578 A JP2016500578 A JP 2016500578A JP 2016512395 A5 JP2016512395 A5 JP 2016512395A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- plasma
- processing chamber
- ammonia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 4
- 229910052756 noble gas Inorganic materials 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361790444P | 2013-03-15 | 2013-03-15 | |
| US61/790,444 | 2013-03-15 | ||
| US14/195,273 US9177787B2 (en) | 2013-03-15 | 2014-03-03 | NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate |
| US14/195,273 | 2014-03-03 | ||
| PCT/US2014/020130 WO2014149656A1 (en) | 2013-03-15 | 2014-03-04 | Nh3 containing plasma nitridation of a layer of a three dimensional structure on a substrate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019035770A Division JP2019125798A (ja) | 2013-03-15 | 2019-02-28 | 基板上の三次元構造の層のｎｈ３含有プラズマ窒化 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016512395A JP2016512395A (ja) | 2016-04-25 |
| JP2016512395A5 true JP2016512395A5 (enExample) | 2017-04-13 |
| JP6749834B2 JP6749834B2 (ja) | 2020-09-02 |
Family
ID=51529015
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016500578A Active JP6749834B2 (ja) | 2013-03-15 | 2014-03-04 | 基板上の三次元構造の層のｎｈ３含有プラズマ窒化 |
| JP2019035770A Pending JP2019125798A (ja) | 2013-03-15 | 2019-02-28 | 基板上の三次元構造の層のｎｈ３含有プラズマ窒化 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019035770A Pending JP2019125798A (ja) | 2013-03-15 | 2019-02-28 | 基板上の三次元構造の層のｎｈ３含有プラズマ窒化 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9177787B2 (enExample) |
| JP (2) | JP6749834B2 (enExample) |
| KR (1) | KR102244381B1 (enExample) |
| CN (1) | CN105009259B (enExample) |
| TW (1) | TWI618152B (enExample) |
| WO (1) | WO2014149656A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9355820B2 (en) | 2013-09-12 | 2016-05-31 | Applied Materials, Inc. | Methods for removing carbon containing films |
| US9312145B2 (en) * | 2014-03-07 | 2016-04-12 | Globalfoundries Inc. | Conformal nitridation of one or more fin-type transistor layers |
| KR101965992B1 (ko) * | 2014-12-25 | 2019-04-04 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기록 매체 및 기판 처리 장치 |
| WO2017100136A1 (en) * | 2015-12-07 | 2017-06-15 | Applied Materials, Inc. | Method and apparatus for clamping and declamping substrates using electrostatic chucks |
| US10510545B2 (en) | 2016-06-20 | 2019-12-17 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
| US10103027B2 (en) | 2016-06-20 | 2018-10-16 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
| US10971357B2 (en) | 2018-10-04 | 2021-04-06 | Applied Materials, Inc. | Thin film treatment process |
| CN111326470A (zh) * | 2018-12-17 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 静电夹盘及半导体设备 |
| WO2021150625A1 (en) | 2020-01-23 | 2021-07-29 | Applied Materials, Inc. | Method of cleaning a structure and method of depositiing a capping layer in a structure |
| CN115602537A (zh) | 2021-07-08 | 2023-01-13 | 长鑫存储技术有限公司（Cn） | 半导体结构及其制备方法 |
| JP2023018347A (ja) * | 2021-07-27 | 2023-02-08 | キオクシア株式会社 | 基板支持装置および基板処理装置 |
| CN118160063A (zh) * | 2021-10-26 | 2024-06-07 | 应用材料公司 | 具有可调氮化的等离子体处理 |
| CN116031141A (zh) * | 2022-12-25 | 2023-04-28 | 北京屹唐半导体科技股份有限公司 | 工件处理方法、工件处理设备及半导体器件 |
| CN115863151B (zh) * | 2022-12-25 | 2023-10-27 | 北京屹唐半导体科技股份有限公司 | 工件处理方法、工件处理设备及半导体器件 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4397491B2 (ja) * | 1999-11-30 | 2010-01-13 | 財団法人国際科学振興財団 | １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法 |
| US6610615B1 (en) * | 2000-11-15 | 2003-08-26 | Intel Corporation | Plasma nitridation for reduced leakage gate dielectric layers |
| CN100533651C (zh) * | 2002-06-12 | 2009-08-26 | 应用材料有限公司 | 用于处理衬底的等离子体方法和装置 |
| JP2004335980A (ja) | 2003-05-12 | 2004-11-25 | Sumitomo Electric Ind Ltd | シリコン窒化膜を形成する方法及び半導体装置の製造方法 |
| CN100461341C (zh) * | 2003-05-28 | 2009-02-11 | 应用材料有限公司 | 使用调幅射频能量的栅极介电层的等离子体氮化方法和设备 |
| US7179754B2 (en) * | 2003-05-28 | 2007-02-20 | Applied Materials, Inc. | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
| JP2005150637A (ja) | 2003-11-19 | 2005-06-09 | Canon Inc | 処理方法及び装置 |
| CN101156234B (zh) * | 2005-03-31 | 2012-01-25 | 东京毅力科创株式会社 | 基板的氮化处理方法和绝缘膜的形成方法 |
| US8318554B2 (en) * | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
| CN101194345B (zh) * | 2005-06-08 | 2010-05-19 | 国立大学法人东北大学 | 等离子体氮化处理方法和处理装置、半导体装置制造方法 |
| KR101163816B1 (ko) * | 2005-09-22 | 2012-07-09 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 장치 |
| WO2007106660A2 (en) * | 2006-03-09 | 2007-09-20 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
| WO2008081724A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
| WO2009024533A1 (en) * | 2007-08-17 | 2009-02-26 | Epispeed Sa | Apparatus and method for producing epitaxial layers |
| US8481433B2 (en) | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
| US20110001169A1 (en) * | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
| US20110061812A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| JP2011077321A (ja) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置 |
| US8962454B2 (en) | 2010-11-04 | 2015-02-24 | Tokyo Electron Limited | Method of depositing dielectric films using microwave plasma |
| US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
-
2014
- 2014-03-03 US US14/195,273 patent/US9177787B2/en active Active
- 2014-03-04 CN CN201480010437.1A patent/CN105009259B/zh active Active
- 2014-03-04 KR KR1020157029863A patent/KR102244381B1/ko active Active
- 2014-03-04 JP JP2016500578A patent/JP6749834B2/ja active Active
- 2014-03-04 WO PCT/US2014/020130 patent/WO2014149656A1/en not_active Ceased
- 2014-03-06 TW TW103107659A patent/TWI618152B/zh active
-
2019
- 2019-02-28 JP JP2019035770A patent/JP2019125798A/ja active Pending
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