JP2016511556A - Ｌｅｄ照明装置 - Google Patents
Ｌｅｄ照明装置 Download PDFInfo
- Publication number
- JP2016511556A JP2016511556A JP2016501845A JP2016501845A JP2016511556A JP 2016511556 A JP2016511556 A JP 2016511556A JP 2016501845 A JP2016501845 A JP 2016501845A JP 2016501845 A JP2016501845 A JP 2016501845A JP 2016511556 A JP2016511556 A JP 2016511556A
- Authority
- JP
- Japan
- Prior art keywords
- light source
- glass
- led
- sealing material
- color conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000011521 glass Substances 0.000 claims abstract description 119
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 239000003566 sealing material Substances 0.000 claims abstract description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 43
- 239000002096 quantum dot Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 25
- 238000007789 sealing Methods 0.000 claims description 21
- 239000006185 dispersion Substances 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 abstract description 23
- 239000000203 mixture Substances 0.000 description 17
- 239000005394 sealing glass Substances 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- GCFDVEHYSAUQGL-UHFFFAOYSA-J fluoro-dioxido-oxo-$l^{5}-phosphane;tin(4+) Chemical compound [Sn+4].[O-]P([O-])(F)=O.[O-]P([O-])(F)=O GCFDVEHYSAUQGL-UHFFFAOYSA-J 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910008449 SnF 2 Inorganic materials 0.000 description 6
- 229920006268 silicone film Polymers 0.000 description 6
- 238000005477 sputtering target Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000005303 fluorophosphate glass Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- -1 tin fluoroborate Chemical compound 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000005365 phosphate glass Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005385 borate glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000124033 Salix Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- General Engineering & Computer Science (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/828,297 US10158057B2 (en) | 2010-10-28 | 2013-03-14 | LED lighting devices |
| US13/828,297 | 2013-03-14 | ||
| PCT/US2014/025418 WO2014159894A1 (en) | 2013-03-14 | 2014-03-13 | Led lighting devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2016511556A true JP2016511556A (ja) | 2016-04-14 |
Family
ID=50639938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016501845A Abandoned JP2016511556A (ja) | 2013-03-14 | 2014-03-13 | Ｌｅｄ照明装置 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2973699A1 (zh) |
| JP (1) | JP2016511556A (zh) |
| KR (1) | KR20150132354A (zh) |
| CN (1) | CN105453262A (zh) |
| WO (1) | WO2014159894A1 (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017028097A (ja) * | 2015-07-22 | 2017-02-02 | シャープ株式会社 | 発光装置および照明装置 |
| CN109564960A (zh) * | 2016-05-11 | 2019-04-02 | 华为技术有限公司 | 量子点发光设备 |
| WO2018022456A1 (en) * | 2016-07-26 | 2018-02-01 | Cree, Inc. | Light emitting diodes, components and related methods |
| CN109721250B (zh) * | 2016-12-01 | 2021-11-26 | 天津理工大学 | 用低熔点玻璃粉制备发光玻璃陶瓷的方法 |
| KR102029932B1 (ko) | 2017-07-28 | 2019-10-08 | 오로라엘이디 주식회사 | 진공을 이용한 led 조명용 방열기구 |
| CN109841052B (zh) * | 2017-11-28 | 2020-07-14 | 群光电子股份有限公司 | 具有复合材罩体的红外线发射装置 |
| US11121298B2 (en) | 2018-05-25 | 2021-09-14 | Creeled, Inc. | Light-emitting diode packages with individually controllable light-emitting diode chips |
| US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
| US11233183B2 (en) | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
| JP2019032563A (ja) * | 2018-11-15 | 2019-02-28 | シャープ株式会社 | 発光装置および照明装置 |
| US11101411B2 (en) | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5089446A (en) | 1990-10-09 | 1992-02-18 | Corning Incorporated | Sealing materials and glasses |
| KR101266130B1 (ko) * | 2005-06-23 | 2013-05-27 | 렌슬러 폴리테크닉 인스티튜트 | 단파장 ｌｅｄ들 및 다운-컨버젼 물질들로 백색광을생성하기 위한 패키지 설계 |
| JP5219331B2 (ja) * | 2005-09-13 | 2013-06-26 | 株式会社住田光学ガラス | 固体素子デバイスの製造方法 |
| US7278408B1 (en) | 2005-11-30 | 2007-10-09 | Brunswick Corporation | Returnless fuel system module |
| US8941293B2 (en) * | 2006-05-11 | 2015-01-27 | Samsung Electronics Co., Ltd. | Solid state lighting devices comprising quantum dots |
| US7723744B2 (en) | 2006-12-08 | 2010-05-25 | Evident Technologies, Inc. | Light-emitting device having semiconductor nanocrystal complexes |
| EP2120271A4 (en) * | 2007-03-01 | 2015-03-25 | Nec Lighting Ltd | LED ARRANGEMENT AND LIGHTING DEVICE |
| KR101442146B1 (ko) * | 2008-02-25 | 2014-09-23 | 삼성디스플레이 주식회사 | 광원 유닛, 이를 포함하는 액정 표시 장치 및 이의 제조방법 |
| KR100982991B1 (ko) * | 2008-09-03 | 2010-09-17 | 삼성엘이디 주식회사 | 양자점 파장변환체, 양자점 파장변환체의 제조방법 및 양자점 파장변환체를 포함하는 발광장치 |
| KR101577300B1 (ko) * | 2008-10-28 | 2015-12-15 | 삼성디스플레이 주식회사 | 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리 |
| US10066164B2 (en) | 2009-06-30 | 2018-09-04 | Tiecheng Qiao | Semiconductor nanocrystals used with LED sources |
| CN102576796B (zh) * | 2009-09-25 | 2015-07-01 | 海洋王照明科技股份有限公司 | 半导体发光器件及其封装方法 |
| US8294168B2 (en) * | 2010-06-04 | 2012-10-23 | Samsung Electronics Co., Ltd. | Light source module using quantum dots, backlight unit employing the light source module, display apparatus, and illumination apparatus |
| US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
| US20120012865A1 (en) * | 2010-07-19 | 2012-01-19 | Jianhua Li | Led array package with a high thermally conductive plate |
| CN103189326B (zh) | 2010-10-28 | 2015-12-02 | 康宁股份有限公司 | 用于led照明应用的含磷光体玻璃料材料 |
| US9412905B2 (en) * | 2011-04-01 | 2016-08-09 | Najing Technology Corporation Limited | White light emitting device |
-
2014
- 2014-03-13 KR KR1020157028982A patent/KR20150132354A/ko not_active Application Discontinuation
- 2014-03-13 EP EP14721609.7A patent/EP2973699A1/en not_active Withdrawn
- 2014-03-13 CN CN201480014703.8A patent/CN105453262A/zh active Pending
- 2014-03-13 WO PCT/US2014/025418 patent/WO2014159894A1/en active Application Filing
- 2014-03-13 JP JP2016501845A patent/JP2016511556A/ja not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150132354A (ko) | 2015-11-25 |
| EP2973699A1 (en) | 2016-01-20 |
| CN105453262A (zh) | 2016-03-30 |
| WO2014159894A1 (en) | 2014-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151209 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170309 |
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| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20171002 |