JP2016508442A - 引き込み装置及びこれを含む反応システム - Google Patents
引き込み装置及びこれを含む反応システム Download PDFInfo
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- JP2016508442A JP2016508442A JP2015557931A JP2015557931A JP2016508442A JP 2016508442 A JP2016508442 A JP 2016508442A JP 2015557931 A JP2015557931 A JP 2015557931A JP 2015557931 A JP2015557931 A JP 2015557931A JP 2016508442 A JP2016508442 A JP 2016508442A
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- 238000006243 chemical reaction Methods 0.000 title claims description 30
- 230000000903 blocking effect Effects 0.000 claims abstract description 92
- 239000007788 liquid Substances 0.000 claims abstract description 43
- 238000004140 cleaning Methods 0.000 claims abstract description 36
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 53
- 239000000376 reactant Substances 0.000 claims description 49
- 239000007921 spray Substances 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000011261 inert gas Substances 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004809 Teflon Substances 0.000 claims description 5
- 229920006362 Teflon® Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 2
- 239000000356 contaminant Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002912 waste gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000007306 turnover Effects 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/76—Gas phase processes, e.g. by using aerosols
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Environmental & Geological Engineering (AREA)
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- Oil, Petroleum & Natural Gas (AREA)
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- Dispersion Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Gas Separation By Absorption (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treating Waste Gases (AREA)
- Nozzles (AREA)
Abstract
Description
Claims (20)
- 内部に流体が通過し得る移送管を含む胴体;
前記胴体の側面の一領域と連結され、前記移送管内に洗浄液を噴射する第1のノズル;及び
前記移送管の内壁から離隔するように前記移送管内に配置される遮断シート;を含み、
前記第1のノズルから噴射される洗浄液は、前記遮断シートの内側に位置する移送管の一領域への流入が遮断される引き込み装置。 - 前記遮断シートの上端は前記ノズルの上部に位置し、前記遮断シートの下端は前記ノズルの下部に位置する、請求項1に記載の引き込み装置。
- 前記胴体は、前記第1のノズルの上部の前記移送管内に位置し、前記遮断シートの上端を支持する固定部を有する、請求項1に記載の引き込み装置。
- 前記固定部は、
前記第1のノズルの上部に位置する胴体の一部領域であり、
前記固定部の内部直径は、前記胴体の残りの部分の内部直径より小さい、請求項3に記載の引き込み装置。 - 前記第1のノズルの数は複数個であり、複数の第1のノズルは互いに離隔して配置される、請求項1に記載の引き込み装置。
- 前記第1のノズルと前記第1のノズルの上側に位置する前記胴体の外壁とがなす角度は、50゜〜70゜である、請求項1に記載の引き込み装置。
- 前記遮断シートは、前記胴体より摩擦係数の小さい樹脂材質である、請求項1に記載の引き込み装置。
- 前記遮断シートはテフロンである、請求項7に記載の引き込み装置。
- 前記遮断シートは、上端、下端、及び前記上端と前記下端との間に位置する側面を含み、前記上端と前記下端が開放された円筒状である、請求項1に記載の引き込み装置。
- 前記遮断シートの上端は、前記固定部に係止されるように前記側面より直径の大きいリング構造である、請求項9に記載の引き込み装置。
- 前記遮断シートの上端は前記側面から突出する、請求項10に記載の引き込み装置。
- 前記遮断シートの下側に位置する前記胴体の側面の他の領域と連結され、前記移送管の内部に非活性ガスを噴射する第2のノズルをさらに含む、請求項1に記載の引き込み装置。
- 前記第2のノズルの数は複数個であり、複数の第2のノズルは離隔して位置する、請求項12に記載の引き込み装置。
- 前記第2のノズルと前記第2のノズルの上側に位置する前記胴体の外壁とがなす角度は、50゜〜70゜である、請求項12に記載の引き込み装置。
- 前記複数の第2のノズルは、前記移送管の内壁に沿って前記非活性ガスを噴射する、請求項13に記載の引き込み装置。
- 前記第2のノズルが前記非活性ガスを噴射する方向と前記移送管の内壁の法線とがなす角は、0゜より大きいか同じで、10゜より小さいか同じである、請求項12に記載の引き込み装置。
- 既に設定された噴射圧力で前記遮断シートの下端に蒸着される反応物、又は前記遮断シートの下側の前記移送管の内壁に蒸着される反応物に気体又は液体を噴射するスプレーノズルをさらに含み、前記反応物は、前記移送管に流入する流体と前記洗浄液との反応による結果物である、請求項1に記載の引き込み装置。
- 前記第1のノズル及び前記スプレーノズルは脱イオン水を噴射し、前記スプレーノズルの数は複数個である、請求項17に記載の引き込み装置。
- 前記第1のノズルから噴射される脱イオン水の噴射圧力と前記スプレーノズルから噴射される脱イオン水の噴射圧力との比は、1:1.5〜1:3である、請求項18に記載の引き込み装置。
- ソースガスを提供するガス流入管;
前記ガス流入管を介して提供される前記ソースガスを用いて反応物を形成する反応器;
前記反応物の生成後に発生するガスを前記反応器から排出するガス排出管;
前記ガス排出管に排出されるガスを洗浄液を用いて洗浄するスクラバー;及び
前記ガス排気管と前記スクラバーとを連結する引き込み装置;を含み、
前記引き込み装置は、
内部に流体が通過し得る移送管を含む胴体;
前記胴体の側面の一領域と連結され、前記移送管内に洗浄液を噴射する第1のノズル;及び
前記移送管の内壁から離隔するように前記移送管内に配置される遮断シート;を含み、
前記第1のノズルから噴射される洗浄液は、前記遮断シートの内側に位置する移送管の一領域への流入が遮断される反応システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130015739A KR101496676B1 (ko) | 2013-02-14 | 2013-02-14 | 인입 장치 및 이를 포함하는 반응 시스템 |
KR10-2013-0015739 | 2013-02-14 | ||
PCT/KR2013/008395 WO2014126318A1 (en) | 2013-02-14 | 2013-09-17 | Inlet and reacting system having the same |
Publications (2)
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JP2016508442A true JP2016508442A (ja) | 2016-03-22 |
JP6078172B2 JP6078172B2 (ja) | 2017-02-08 |
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JP2015557931A Active JP6078172B2 (ja) | 2013-02-14 | 2013-09-17 | 引き込み装置及びこれを含む反応システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US20150368795A1 (ja) |
EP (1) | EP2956958B1 (ja) |
JP (1) | JP6078172B2 (ja) |
KR (1) | KR101496676B1 (ja) |
CN (1) | CN105190833B (ja) |
TW (1) | TWI524373B (ja) |
WO (1) | WO2014126318A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101580368B1 (ko) * | 2013-11-08 | 2016-01-06 | 엠에이티플러스 주식회사 | 스크러버용 인렛 |
KR20190002318A (ko) * | 2017-06-29 | 2019-01-08 | 가부시키가이샤 에바라 세이사꾸쇼 | 배기계 설비 시스템 |
CN111790248B (zh) * | 2020-07-13 | 2022-07-29 | 上海卓鼎模具有限公司 | 一种恒温净化进风装置及其系统 |
KR102513887B1 (ko) | 2021-01-18 | 2023-03-24 | 엠에이티플러스 주식회사 | 압력자동제어 벤츄리를 구비한 스크러버 시스템 |
Citations (2)
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JP2002316015A (ja) * | 2001-04-18 | 2002-10-29 | Sony Corp | 排ガス処理装置 |
JP2006116470A (ja) * | 2004-10-22 | 2006-05-11 | Applied Materials Inc | 排ガス処理方法及び排ガス処理装置 |
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JPS51148673A (en) * | 1975-06-16 | 1976-12-21 | Mitsubishi Heavy Ind Ltd | A wet treatment process for exhaust gas |
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WO1998029178A1 (en) * | 1996-12-31 | 1998-07-09 | Atmi Ecosys Corporation | Inlet structures for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
US5955037A (en) * | 1996-12-31 | 1999-09-21 | Atmi Ecosys Corporation | Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
US5935283A (en) * | 1996-12-31 | 1999-08-10 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
US6830730B2 (en) * | 2001-09-11 | 2004-12-14 | Spectrolanalytical Instruments | Method and apparatus for the on-stream analysis of total sulfur and/or nitrogen in petroleum products |
US20040185661A1 (en) * | 2003-03-17 | 2004-09-23 | Sherer John Michael | Scrubber system for pretreatment of an effluent waste stream containing arsenic |
KR200366263Y1 (ko) * | 2004-07-21 | 2004-11-04 | 비씨엔씨 주식회사 | 배기관 |
KR100724738B1 (ko) * | 2005-08-02 | 2007-06-04 | 이희권 | 접촉여재 필터를 이용한 고밀도 여과장치 |
KR100847656B1 (ko) * | 2006-12-21 | 2008-07-21 | 동부일렉트로닉스 주식회사 | 파우더 트랩이 설치된 드라이 가스 스크러버 |
KR100934478B1 (ko) * | 2008-01-25 | 2009-12-30 | 한국기계연구원 | 유해가스처리장치 |
KR100992752B1 (ko) * | 2008-11-14 | 2010-11-05 | 주식회사 동부하이텍 | 반도체 제조 공정의 폐가스 처리장치 |
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- 2013-02-14 KR KR20130015739A patent/KR101496676B1/ko active IP Right Grant
- 2013-09-17 US US14/767,727 patent/US20150368795A1/en not_active Abandoned
- 2013-09-17 EP EP13874969.2A patent/EP2956958B1/en active Active
- 2013-09-17 WO PCT/KR2013/008395 patent/WO2014126318A1/en active Application Filing
- 2013-09-17 JP JP2015557931A patent/JP6078172B2/ja active Active
- 2013-09-17 CN CN201380073084.5A patent/CN105190833B/zh active Active
- 2013-11-29 TW TW102143897A patent/TWI524373B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002316015A (ja) * | 2001-04-18 | 2002-10-29 | Sony Corp | 排ガス処理装置 |
JP2006116470A (ja) * | 2004-10-22 | 2006-05-11 | Applied Materials Inc | 排ガス処理方法及び排ガス処理装置 |
Also Published As
Publication number | Publication date |
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EP2956958B1 (en) | 2019-10-16 |
CN105190833B (zh) | 2017-11-17 |
KR20140102446A (ko) | 2014-08-22 |
TW201432783A (zh) | 2014-08-16 |
US20150368795A1 (en) | 2015-12-24 |
JP6078172B2 (ja) | 2017-02-08 |
TWI524373B (zh) | 2016-03-01 |
CN105190833A (zh) | 2015-12-23 |
KR101496676B1 (ko) | 2015-02-27 |
EP2956958A4 (en) | 2016-10-19 |
WO2014126318A1 (en) | 2014-08-21 |
EP2956958A1 (en) | 2015-12-23 |
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