JP2016500845A5 - - Google Patents

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Publication number
JP2016500845A5
JP2016500845A5 JP2015538484A JP2015538484A JP2016500845A5 JP 2016500845 A5 JP2016500845 A5 JP 2016500845A5 JP 2015538484 A JP2015538484 A JP 2015538484A JP 2015538484 A JP2015538484 A JP 2015538484A JP 2016500845 A5 JP2016500845 A5 JP 2016500845A5
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JP
Japan
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region
optical
mark
optical position
position mark
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JP2015538484A
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JP6367209B2 (ja
JP2016500845A (ja
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Priority claimed from PCT/EP2013/072518 external-priority patent/WO2014064290A1/en
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JP2015538484A 2012-10-26 2013-10-28 リソグラフィシステムにおいて基板の位置を測定すること Active JP6367209B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261718872P 2012-10-26 2012-10-26
US61/718,872 2012-10-26
US201261732445P 2012-12-03 2012-12-03
US61/732,445 2012-12-03
PCT/EP2013/072518 WO2014064290A1 (en) 2012-10-26 2013-10-28 Determining a position of a substrate in lithography

Publications (3)

Publication Number Publication Date
JP2016500845A JP2016500845A (ja) 2016-01-14
JP2016500845A5 true JP2016500845A5 (https=) 2018-04-12
JP6367209B2 JP6367209B2 (ja) 2018-08-01

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JP2015538484A Active JP6367209B2 (ja) 2012-10-26 2013-10-28 リソグラフィシステムにおいて基板の位置を測定すること

Country Status (9)

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US (1) US10054863B2 (https=)
EP (1) EP2912521A1 (https=)
JP (1) JP6367209B2 (https=)
KR (2) KR102042212B1 (https=)
CN (1) CN104885014B (https=)
NL (1) NL2011681C2 (https=)
RU (1) RU2659967C2 (https=)
TW (1) TWI617903B (https=)
WO (1) WO2014064290A1 (https=)

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US10418290B2 (en) * 2017-02-02 2019-09-17 United Microelectronics Corp. Method of patterning semiconductor device
US10585360B2 (en) 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
US10670802B2 (en) 2017-08-31 2020-06-02 University of Pittsburgh—of the Commonwealth System of Higher Education Method of making a distributed optical fiber sensor having enhanced Rayleigh scattering and enhanced temperature stability, and monitoring systems employing same
CN107728236B (zh) * 2017-10-26 2019-07-05 鲁东大学 超构表面元件的制造方法及其产生纳米尺度纵向光斑链的方法
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
WO2020180470A1 (en) * 2019-03-01 2020-09-10 Applied Materials, Inc. Transparent wafer center finder
KR102785614B1 (ko) 2020-03-13 2025-03-27 에이에스엠엘 네델란즈 비.브이. 다중 하전 입자 빔 검사에서의 레벨링 센서
KR102937512B1 (ko) 2020-09-29 2026-03-12 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법

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NL2008679C2 (en) * 2011-04-22 2013-06-26 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark.

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