US3755704A
(en)
|
1970-02-06 |
1973-08-28 |
Stanford Research Inst |
Field emission cathode structures and devices utilizing such structures
|
US3870917A
(en)
|
1971-05-10 |
1975-03-11 |
Itt |
Discharge device including channel type electron multiplier having ion adsorptive layer
|
GB1444951A
(en)
|
1973-06-18 |
1976-08-04 |
Mullard Ltd |
Electronic solid state devices
|
GB1536412A
(en)
|
1975-05-14 |
1978-12-20 |
English Electric Valve Co Ltd |
Photocathodes
|
US4210922A
(en)
|
1975-11-28 |
1980-07-01 |
U.S. Philips Corporation |
Charge coupled imaging device having selective wavelength sensitivity
|
NL7611593A
(nl)
|
1976-10-20 |
1978-04-24 |
Optische Ind De Oude Delft Nv |
Werkwijze voor het in een beeldversterkerbuis aanbrengen van een lichtabsorberende, voor elek- tronen doorlaatbare laag.
|
JPS58146B2
(ja)
|
1980-10-14 |
1983-01-05 |
浜松テレビ株式会社 |
フレ−ミング管
|
US4348690A
(en)
|
1981-04-30 |
1982-09-07 |
Rca Corporation |
Semiconductor imagers
|
US4555731A
(en)
|
1984-04-30 |
1985-11-26 |
Polaroid Corporation |
Electronic imaging camera with microchannel plate
|
US4760031A
(en)
|
1986-03-03 |
1988-07-26 |
California Institute Of Technology |
Producing CCD imaging sensor with flashed backside metal film
|
NL8902271A
(nl)
|
1989-09-12 |
1991-04-02 |
Philips Nv |
Werkwijze voor het verbinden van twee lichamen.
|
US5120949A
(en)
|
1991-01-17 |
1992-06-09 |
Burle Technologies, Inc. |
Semiconductor anode photomultiplier tube
|
US5563702A
(en)
|
1991-08-22 |
1996-10-08 |
Kla Instruments Corporation |
Automated photomask inspection apparatus and method
|
US5376810A
(en)
|
1992-06-26 |
1994-12-27 |
California Institute Of Technology |
Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
|
US5227313A
(en)
|
1992-07-24 |
1993-07-13 |
Eastman Kodak Company |
Process for making backside illuminated image sensors
|
US5315126A
(en)
|
1992-10-13 |
1994-05-24 |
Itt Corporation |
Highly doped surface layer for negative electron affinity devices
|
US5428392A
(en)
*
|
1992-11-20 |
1995-06-27 |
Picker International, Inc. |
Strobing time-delayed and integration video camera system
|
US5475227A
(en)
|
1992-12-17 |
1995-12-12 |
Intevac, Inc. |
Hybrid photomultiplier tube with ion deflector
|
US5326978A
(en)
|
1992-12-17 |
1994-07-05 |
Intevac, Inc. |
Focused electron-bombarded detector
|
FI940740A0
(fi)
|
1994-02-17 |
1994-02-17 |
Arto Salokatve |
Detektor foer paovisning av fotoner eller partiklar, foerfarande foer framstaellning av detektorn och maetningsfoerfarande
|
US6271916B1
(en)
|
1994-03-24 |
2001-08-07 |
Kla-Tencor Corporation |
Process and assembly for non-destructive surface inspections
|
US5493176A
(en)
|
1994-05-23 |
1996-02-20 |
Siemens Medical Systems, Inc. |
Photomultiplier tube with an avalanche photodiode, a flat input end and conductors which simulate the potential distribution in a photomultiplier tube having a spherical-type input end
|
US20080315092A1
(en)
|
1994-07-28 |
2008-12-25 |
General Nanotechnology Llc |
Scanning probe microscopy inspection and modification system
|
EP0702221A3
(en)
|
1994-09-14 |
1997-05-21 |
Delco Electronics Corp |
Sensor integrated on a chip
|
US5852322A
(en)
|
1995-05-19 |
1998-12-22 |
Dr. Johannes Heidenhain Gmbh |
Radiation-sensitive detector element and method for producing it
|
US6362484B1
(en)
|
1995-07-14 |
2002-03-26 |
Imec Vzw |
Imager or particle or radiation detector and method of manufacturing the same
|
US5731584A
(en)
|
1995-07-14 |
1998-03-24 |
Imec Vzw |
Position sensitive particle sensor and manufacturing method therefor
|
US5999310A
(en)
|
1996-07-22 |
1999-12-07 |
Shafer; David Ross |
Ultra-broadband UV microscope imaging system with wide range zoom capability
|
US5717518A
(en)
|
1996-07-22 |
1998-02-10 |
Kla Instruments Corporation |
Broad spectrum ultraviolet catadioptric imaging system
|
US5760899A
(en)
|
1996-09-04 |
1998-06-02 |
Erim International, Inc. |
High-sensitivity multispectral sensor
|
US5940685A
(en)
|
1996-10-28 |
1999-08-17 |
The United States Of America As Represented By The Secretary Of The Air Force |
Fabrication of UV-sensitive back illuminated CCD image sensors
|
JPH10171965A
(ja)
|
1996-12-05 |
1998-06-26 |
Toshiba Corp |
積算型エリアセンサの画像入力方法及びその装置
|
US6608676B1
(en)
|
1997-08-01 |
2003-08-19 |
Kla-Tencor Corporation |
System for detecting anomalies and/or features of a surface
|
US6201601B1
(en)
|
1997-09-19 |
2001-03-13 |
Kla-Tencor Corporation |
Sample inspection system
|
US6403963B1
(en)
|
1997-09-29 |
2002-06-11 |
California Institute Of Technology |
Delta-doped CCD's as low-energy particle detectors and imagers
|
US6278119B1
(en)
|
1997-10-21 |
2001-08-21 |
California Institute Of Technology |
Using a delta-doped CCD to determine the energy of a low-energy particle
|
US6297879B1
(en)
|
1998-02-27 |
2001-10-02 |
Micron Technology, Inc. |
Inspection method and apparatus for detecting defects on photomasks
|
US6162707A
(en)
|
1998-05-18 |
2000-12-19 |
The Regents Of The University Of California |
Low work function, stable thin films
|
US6373869B1
(en)
|
1998-07-30 |
2002-04-16 |
Actinix |
System and method for generating coherent radiation at ultraviolet wavelengths
|
US6013399A
(en)
|
1998-12-04 |
2000-01-11 |
Advanced Micro Devices, Inc. |
Reworkable EUV mask materials
|
US6285018B1
(en)
|
1999-07-20 |
2001-09-04 |
Intevac, Inc. |
Electron bombarded active pixel sensor
|
US6657178B2
(en)
|
1999-07-20 |
2003-12-02 |
Intevac, Inc. |
Electron bombarded passive pixel sensor imaging
|
US6307586B1
(en)
|
1999-07-20 |
2001-10-23 |
Intevac, Inc. |
Electron bombarded active pixel sensor camera incorporating gain control
|
US6549647B1
(en)
|
2000-01-07 |
2003-04-15 |
Cyberoptics Corporation |
Inspection system with vibration resistant video capture
|
US6711283B1
(en)
|
2000-05-03 |
2004-03-23 |
Aperio Technologies, Inc. |
Fully automatic rapid microscope slide scanner
|
US6507147B1
(en)
|
2000-08-31 |
2003-01-14 |
Intevac, Inc. |
Unitary vacuum tube incorporating high voltage isolation
|
US7136159B2
(en)
|
2000-09-12 |
2006-11-14 |
Kla-Tencor Technologies Corporation |
Excimer laser inspection system
|
JP2002184302A
(ja)
|
2000-12-18 |
2002-06-28 |
Hamamatsu Photonics Kk |
半導体光電陰極
|
US6545281B1
(en)
|
2001-07-06 |
2003-04-08 |
The United States Of America As Represented By The United States Department Of Energy |
Pocked surface neutron detector
|
JP3573725B2
(ja)
|
2001-08-03 |
2004-10-06 |
川崎重工業株式会社 |
X線顕微鏡装置
|
JP2003043533A
(ja)
|
2001-08-03 |
2003-02-13 |
Kitakyushu Foundation For The Advancement Of Industry Science & Technology |
レーザーの第二高調波の方向を一定に保つための自動追尾装置
|
US7015452B2
(en)
|
2001-10-09 |
2006-03-21 |
Itt Manufacturing Enterprises, Inc. |
Intensified hybrid solid-state sensor
|
US6747258B2
(en)
|
2001-10-09 |
2004-06-08 |
Itt Manufacturing Enterprises, Inc. |
Intensified hybrid solid-state sensor with an insulating layer
|
AU2002356951A1
(en)
|
2001-11-13 |
2003-05-26 |
Nanosciences Corporation |
Photocathode
|
US7130039B2
(en)
|
2002-04-18 |
2006-10-31 |
Kla-Tencor Technologies Corporation |
Simultaneous multi-spot inspection and imaging
|
JP4165129B2
(ja)
|
2002-06-21 |
2008-10-15 |
三菱電機株式会社 |
裏面入射型固体撮像素子
|
US20040021061A1
(en)
|
2002-07-30 |
2004-02-05 |
Frederik Bijkerk |
Photodiode, charged-coupled device and method for the production
|
US7446474B2
(en)
|
2002-10-10 |
2008-11-04 |
Applied Materials, Inc. |
Hetero-junction electron emitter with Group III nitride and activated alkali halide
|
US7283166B1
(en)
|
2002-10-15 |
2007-10-16 |
Lockheed Martin Corporation |
Automatic control method and system for electron bombarded charge coupled device (“EBCCD”) sensor
|
US7126699B1
(en)
|
2002-10-18 |
2006-10-24 |
Kla-Tencor Technologies Corp. |
Systems and methods for multi-dimensional metrology and/or inspection of a specimen
|
US7005637B2
(en)
|
2003-01-31 |
2006-02-28 |
Intevac, Inc. |
Backside thinning of image array devices
|
US6990385B1
(en)
|
2003-02-03 |
2006-01-24 |
Kla-Tencor Technologies Corporation |
Defect detection using multiple sensors and parallel processing
|
GB2398118B
(en)
|
2003-02-07 |
2006-03-15 |
Imp College Innovations Ltd |
Photon arrival time detection
|
US7141785B2
(en)
|
2003-02-13 |
2006-11-28 |
Micromass Uk Limited |
Ion detector
|
US7313155B1
(en)
|
2004-02-12 |
2007-12-25 |
Liyue Mu |
High power Q-switched laser for soft tissue ablation
|
JP2005241290A
(ja)
|
2004-02-24 |
2005-09-08 |
Toshiba Corp |
画像入力装置及び検査装置
|
JP4365255B2
(ja)
|
2004-04-08 |
2009-11-18 |
浜松ホトニクス株式会社 |
発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置
|
US7301263B2
(en)
|
2004-05-28 |
2007-11-27 |
Applied Materials, Inc. |
Multiple electron beam system with electron transmission gates
|
KR100688497B1
(ko)
|
2004-06-28 |
2007-03-02 |
삼성전자주식회사 |
이미지 센서 및 그 제조방법
|
US7455565B2
(en)
|
2004-10-13 |
2008-11-25 |
The Board Of Trustees Of The Leland Stanford Junior University |
Fabrication of group III-nitride photocathode having Cs activation layer
|
US7952633B2
(en)
*
|
2004-11-18 |
2011-05-31 |
Kla-Tencor Technologies Corporation |
Apparatus for continuous clocking of TDI sensors
|
US7609309B2
(en)
*
|
2004-11-18 |
2009-10-27 |
Kla-Tencor Technologies Corporation |
Continuous clocking of TDI sensors
|
US7491943B2
(en)
*
|
2005-01-13 |
2009-02-17 |
Whitehead Institute For Biomedical Research |
Method and apparatus for UV imaging
|
JP4751617B2
(ja)
|
2005-01-21 |
2011-08-17 |
株式会社日立ハイテクノロジーズ |
欠陥検査方法及びその装置
|
US7335874B2
(en)
*
|
2005-03-18 |
2008-02-26 |
Whitehead Institute For Biomedical Research |
Method and apparatus for generating a circularly polarized illumination beam
|
JP2006284183A
(ja)
*
|
2005-03-31 |
2006-10-19 |
Toshiba Corp |
検査装置及び撮像装置
|
DE602006004913D1
(de)
|
2005-04-28 |
2009-03-12 |
Semiconductor Energy Lab |
Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
|
US7531826B2
(en)
|
2005-06-01 |
2009-05-12 |
Intevac, Inc. |
Photocathode structure and operation
|
US7345825B2
(en)
|
2005-06-30 |
2008-03-18 |
Kla-Tencor Technologies Corporation |
Beam delivery system for laser dark-field illumination in a catadioptric optical system
|
JP5403852B2
(ja)
|
2005-08-12 |
2014-01-29 |
株式会社荏原製作所 |
検出装置及び検査装置
|
WO2007032217A1
(ja)
|
2005-09-16 |
2007-03-22 |
Matsushita Electric Industrial Co., Ltd. |
コンポジット材料、及びこれを用いた光学部品
|
KR101003054B1
(ko)
|
2005-09-21 |
2010-12-21 |
알제이에스 테크놀로지, 인코포레이티드 |
고 분해능 및 넓은 동작범위의 적분기
|
US7715459B2
(en)
|
2005-11-01 |
2010-05-11 |
Cymer, Inc. |
Laser system
|
JP2007133102A
(ja)
|
2005-11-09 |
2007-05-31 |
Canon Inc |
反射防止膜を有する光学素子及びそれを有する露光装置
|
US7329860B2
(en)
*
|
2005-11-23 |
2008-02-12 |
Illumina, Inc. |
Confocal imaging methods and apparatus
|
US7528943B2
(en)
|
2005-12-27 |
2009-05-05 |
Kla-Tencor Technologies Corporation |
Method and apparatus for simultaneous high-speed acquisition of multiple images
|
JP4911494B2
(ja)
|
2006-03-18 |
2012-04-04 |
国立大学法人大阪大学 |
波長変換光学素子、波長変換光学素子の製造方法、波長変換装置、紫外線レーザ照射装置およびレーザ加工装置
|
WO2007112058A2
(en)
|
2006-03-24 |
2007-10-04 |
Applied Materials, Inc. |
Carbon precursors for use during silicon epitaxial firm formation
|
US7113325B1
(en)
|
2006-05-03 |
2006-09-26 |
Mitsubishi Materials Corporation |
Wavelength conversion method with improved conversion efficiency
|
EP2033036A4
(en)
|
2006-06-13 |
2009-07-15 |
Invent Technologies Llc |
DEVICE AND METHOD FOR OPTICAL UV DEEP MICROSCOPY
|
US7457330B2
(en)
|
2006-06-15 |
2008-11-25 |
Pavilion Integration Corporation |
Low speckle noise monolithic microchip RGB lasers
|
US8482197B2
(en)
|
2006-07-05 |
2013-07-09 |
Hamamatsu Photonics K.K. |
Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube
|
US7791170B2
(en)
|
2006-07-10 |
2010-09-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method of making a deep junction for electrical crosstalk reduction of an image sensor
|
KR100826407B1
(ko)
|
2006-10-12 |
2008-05-02 |
삼성전기주식회사 |
자외선 수광용 포토 다이오드 및 이를 포함하는 이미지센서
|
KR100874954B1
(ko)
|
2006-12-04 |
2008-12-19 |
삼성전자주식회사 |
후면 수광 이미지 센서
|
JP5342769B2
(ja)
|
2006-12-28 |
2013-11-13 |
浜松ホトニクス株式会社 |
光電陰極、電子管及び光電子増倍管
|
US8323406B2
(en)
|
2007-01-17 |
2012-12-04 |
Crystal Is, Inc. |
Defect reduction in seeded aluminum nitride crystal growth
|
US9771666B2
(en)
|
2007-01-17 |
2017-09-26 |
Crystal Is, Inc. |
Defect reduction in seeded aluminum nitride crystal growth
|
CN101021490B
(zh)
*
|
2007-03-12 |
2012-11-14 |
3i系统公司 |
平面基板自动检测系统及方法
|
US7586108B2
(en)
|
2007-06-25 |
2009-09-08 |
Asml Netherlands B.V. |
Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
|
US8138485B2
(en)
|
2007-06-25 |
2012-03-20 |
Asml Netherlands B.V. |
Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector
|
WO2009009081A2
(en)
|
2007-07-10 |
2009-01-15 |
Massachusetts Institute Of Technology |
Tomographic phase microscopy
|
WO2009012222A1
(en)
|
2007-07-13 |
2009-01-22 |
Purdue Research Foundation |
Time-resolved raman spectroscopy
|
US7999342B2
(en)
|
2007-09-24 |
2011-08-16 |
Taiwan Semiconductor Manufacturing Company, Ltd |
Image sensor element for backside-illuminated sensor
|
JP5039495B2
(ja)
|
2007-10-04 |
2012-10-03 |
ルネサスエレクトロニクス株式会社 |
マスクブランク検査方法、反射型露光マスクの製造方法、反射型露光方法および半導体集積回路の製造方法
|
US7525649B1
(en)
|
2007-10-19 |
2009-04-28 |
Kla-Tencor Technologies Corporation |
Surface inspection system using laser line illumination with two dimensional imaging
|
JP5132262B2
(ja)
|
2007-11-02 |
2013-01-30 |
三菱電機株式会社 |
裏面入射型リニアイメージセンサ、その駆動方法、及びその製造方法
|
US7741666B2
(en)
|
2008-02-08 |
2010-06-22 |
Omnivision Technologies, Inc. |
Backside illuminated imaging sensor with backside P+ doped layer
|
US20120170021A1
(en)
|
2008-09-02 |
2012-07-05 |
Phillip Walsh |
Method and apparatus for providing multiple wavelength reflectance magnitude and phase for a sample
|
US7880127B2
(en)
|
2008-10-27 |
2011-02-01 |
Itt Manufacturing Enterprises, Inc. |
Apparatus and method for aligning an image sensor including a header alignment means
|
US8581228B2
(en)
|
2009-01-22 |
2013-11-12 |
Bae Systems Information And Electronic Systems Integration Inc. |
Corner cube enhanced photocathode
|
US8624971B2
(en)
|
2009-01-23 |
2014-01-07 |
Kla-Tencor Corporation |
TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
|
US20100301437A1
(en)
|
2009-06-01 |
2010-12-02 |
Kla-Tencor Corporation |
Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems
|
US7985658B2
(en)
|
2009-06-08 |
2011-07-26 |
Aptina Imaging Corporation |
Method of forming substrate for use in imager devices
|
JP5748748B2
(ja)
|
2009-06-19 |
2015-07-15 |
ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation |
極紫外線検査システム
|
JP2012530929A
(ja)
|
2009-06-22 |
2012-12-06 |
エーエスエムエル ネザーランズ ビー.ブイ. |
オブジェクト検査システムおよび方法
|
US8629384B1
(en)
|
2009-10-26 |
2014-01-14 |
Kla-Tencor Corporation |
Photomultiplier tube optimized for surface inspection in the ultraviolet
|
CN102640015B
(zh)
|
2009-12-15 |
2014-10-22 |
圣戈本陶瓷及塑料股份有限公司 |
用于分析由辐射检测器输出的电脉冲的辐射检测系统和方法
|
EP2346094A1
(en)
|
2010-01-13 |
2011-07-20 |
FEI Company |
Method of manufacturing a radiation detector
|
EP2526566B1
(en)
|
2010-01-21 |
2018-03-07 |
Roper Scientific, Inc. |
Solid state back-illuminated photon sensor and its method of fabrication
|
CA2786149C
(en)
|
2010-01-22 |
2019-11-12 |
The Board Of Trustees Of The Leland Stanford Junior University |
Inhibition of axl signaling in anti-metastatic therapy
|
US8558234B2
(en)
|
2010-02-11 |
2013-10-15 |
California Institute Of Technology |
Low voltage low light imager and photodetector
|
WO2011123469A1
(en)
*
|
2010-03-29 |
2011-10-06 |
Intevac, Inc. |
Time resolved photoluminescence imaging systems and methods for photovoltaic cell inspection
|
US8269223B2
(en)
|
2010-05-27 |
2012-09-18 |
The United States Of America As Represented By The Secretary Of The Army |
Polarization enhanced avalanche photodetector and method thereof
|
US8310021B2
(en)
|
2010-07-13 |
2012-11-13 |
Honeywell International Inc. |
Neutron detector with wafer-to-wafer bonding
|
JP6010042B2
(ja)
|
2010-12-16 |
2016-10-19 |
ケーエルエー−テンカー コーポレイション |
ウェーハ検査
|
US8669512B2
(en)
|
2010-12-28 |
2014-03-11 |
Technion Research & Development Foundation Limited |
System and method for analyzing light by three-photon counting
|
US8513587B2
(en)
|
2011-01-24 |
2013-08-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Image sensor with anti-reflection layer and method of manufacturing the same
|
US8455971B2
(en)
|
2011-02-14 |
2013-06-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Apparatus and method for improving charge transfer in backside illuminated image sensor
|
JP2012189385A
(ja)
|
2011-03-09 |
2012-10-04 |
Fujifilm Corp |
放射線画像検出装置の保守方法
|
US9318870B2
(en)
|
2011-05-06 |
2016-04-19 |
Kla-Tencor Corporation |
Deep ultra-violet light sources for wafer and reticle inspection systems
|
US9279774B2
(en)
|
2011-07-12 |
2016-03-08 |
Kla-Tencor Corp. |
Wafer inspection
|
US8871557B2
(en)
|
2011-09-02 |
2014-10-28 |
Electronics And Telecommunications Research Institute |
Photomultiplier and manufacturing method thereof
|
US8872159B2
(en)
|
2011-09-29 |
2014-10-28 |
The United States Of America, As Represented By The Secretary Of The Navy |
Graphene on semiconductor detector
|
US10197501B2
(en)
|
2011-12-12 |
2019-02-05 |
Kla-Tencor Corporation |
Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
|
US8754972B2
(en)
|
2012-02-01 |
2014-06-17 |
Kla-Tencor Corporation |
Integrated multi-channel analog front end and digitizer for high speed imaging applications
|
US9496425B2
(en)
|
2012-04-10 |
2016-11-15 |
Kla-Tencor Corporation |
Back-illuminated sensor with boron layer
|
US10079257B2
(en)
|
2012-04-13 |
2018-09-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Anti-reflective layer for backside illuminated CMOS image sensors
|
KR101914231B1
(ko)
|
2012-05-30 |
2018-11-02 |
삼성디스플레이 주식회사 |
주사 전자 현미경을 이용한 검사 시스템
|
NL2011568A
(en)
|
2012-10-31 |
2014-05-06 |
Asml Netherlands Bv |
Sensor and lithographic apparatus.
|
US8912615B2
(en)
|
2013-01-24 |
2014-12-16 |
Osi Optoelectronics, Inc. |
Shallow junction photodiode for detecting short wavelength light
|
US8929406B2
(en)
|
2013-01-24 |
2015-01-06 |
Kla-Tencor Corporation |
193NM laser and inspection system
|
US9478402B2
(en)
|
2013-04-01 |
2016-10-25 |
Kla-Tencor Corporation |
Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
|
US9350921B2
(en)
|
2013-06-06 |
2016-05-24 |
Mitutoyo Corporation |
Structured illumination projection with enhanced exposure control
|
US9347890B2
(en)
|
2013-12-19 |
2016-05-24 |
Kla-Tencor Corporation |
Low-noise sensor and an inspection system using a low-noise sensor
|
US9748294B2
(en)
|
2014-01-10 |
2017-08-29 |
Hamamatsu Photonics K.K. |
Anti-reflection layer for back-illuminated sensor
|