JP2016181674A - Semiconductor light-emitting device and apparatus including the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with high operation reliability while preventing the decrease in luminous efficiency.SOLUTION: The semiconductor light-emitting device includes: a semiconductor light-emitting element 10 emitting a deep UV light and including an element substrate 11 and a semiconductor stack portion 12 with a mesa structure formed by stacking an n-type semiconductor layer 121, a light-emitting layer 122, and a p-type semiconductor layer 123 on the element substrate 11 in this order from the element substrate 11 side; and a sub-mount substrate 20 electrically connected to the semiconductor light-emitting element 10 through a plurality of adhesion portions 22. In the plan view, the adhesion portions 22 are disposed so that the total area of the plural adhesion portions 22 on the top surface of the mesa structure of the semiconductor stack portion 12 is 10% or more and 50% or less of the light-emitting area of the light-emitting layer 122, and so that the edge of each of the adhesion portions 22 on the top surface of the mesa structure of the semiconductor stack portion 12 comes on the inside relative to the edge of the top surface of the mesa structure.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor light emitting device and a device including the same.

Conventionally, semiconductor elements have been used in various electronic devices and applied to optical devices such as light emitting elements and light receiving elements, various sensors, and the like. For example, when attention is paid to a light emitting element, development of a semiconductor light emitting element in an ultraviolet region (hereinafter referred to as UVB) having an emission wavelength of 320 nm or less and an ultraviolet region (hereinafter referred to as UVC) having an emission wavelength of 280 nm or less is expected. .
The UVC semiconductor light-emitting element has a structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked in this order from the substrate side on a substrate such as a sapphire substrate or an aluminum nitride (AlN) substrate. ing. Ultraviolet semiconductor light emitting elements often take the form of extracting light from the substrate side from the viewpoint of light extraction efficiency.

  By the way, in a high-intensity light-emitting element, it is important to dissipate heat generated when a current is applied. In particular, an ultraviolet semiconductor light emitting device has a very low luminous efficiency of about 1%, and therefore there is a problem that the light emitting device is quickly deteriorated if heat radiation is insufficient. For this problem, for example, Patent Document 1 proposes that the light-emitting element semiconductor layer is peeled from the substrate and bonded to a support substrate having high heat dissipation.

JP 2007-83112 A

In the semiconductor light emitting device described in Patent Document 1, in order to improve heat dissipation, the light emitting device is peeled off from a substrate having low thermal conductivity and bonded to a substrate having high thermal conductivity. However, when the light-emitting element is peeled off from the substrate as in the invention described in Patent Document 1, the manufacturing procedure of the light-emitting element is complicated, which may cause a decrease in yield, or light emission efficiency may be reduced due to damage at the time of peeling. there's a possibility that. In addition, in order for the light-emitting element to operate for a long time without any trouble, in addition to realizing high heat dissipation and removing the influence of heat, the light-emitting element and the support substrate must be able to withstand external vibration. It must also be glued.
The present invention has been made in view of such problems, and an object of the present invention is to provide a semiconductor light emitting device with high operational reliability and a device including the same while preventing a decrease in light emission efficiency. It is aimed.

A semiconductor light-emitting device according to one embodiment of the present invention includes a semiconductor substrate having a mesa structure in which an element substrate and an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked in this order from the element substrate side. A semiconductor light-emitting element that emits light in the deep ultraviolet region including a stacked portion, and a submount substrate that is electrically connected to the semiconductor light-emitting element through a plurality of adhesive portions. The total area of the plurality of adhesive portions arranged on the upper surface of the mesa structure is 10% to 50% of the light emitting area of the light emitting layer, and each of the adhesive portions arranged on the upper surface of the mesa structure Is characterized in that the edge is inside the edge of the top surface of the mesa structure.
In addition, an apparatus according to another aspect of the present invention is characterized by including the semiconductor light emitting device according to the above aspect.

  According to one embodiment of the present invention, a reduction in light emission efficiency can be prevented and a semiconductor light emitting device with high operation reliability can be obtained, that is, a semiconductor light emitting device with excellent long-term reliability can be realized.

It is a schematic diagram which shows an example of the semiconductor light-emitting device in one Embodiment of this invention. It is a mimetic diagram showing an example of a semiconductor light emitting element contained in a semiconductor light emitting device in one embodiment of the present invention.

  In the following detailed description, numerous specific specific configurations are described to provide a thorough understanding of embodiments of the invention. However, it will be apparent that other embodiments may be practiced without limitation to such specific specific configurations. Further, the following embodiments do not limit the invention according to the claims, but include all combinations of characteristic configurations described in the embodiments.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
A semiconductor light-emitting device according to an embodiment of the present invention includes an element substrate and a semiconductor having a mesa structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked on the element substrate in this order from the element substrate side. A semiconductor light-emitting element that emits light in the deep ultraviolet region, and a submount substrate that is electrically connected to the semiconductor light-emitting element through a plurality of adhesive portions. The total area of the plurality of bonding portions arranged on the top surface of the mesa structure in plan view is 10% or more and 50% or less of the light emitting area of the light emitting layer, and the bonding arranged on the top surface of the mesa structure. The edge of each part is inside the edge of the upper surface of the mesa structure.

In plan view, the total area of the bonding portions arranged on the top surface of the mesa structure is 10% to 50% of the light emitting area of the light emitting layer, and each of the bonding portions arranged on the top surface of the mesa structure By designing the layout of the semiconductor stacked portion and the plurality of bonding portions so that the edge is inside the edge of the upper surface of the mesa structure of the semiconductor stacked portion, the light emitting efficiency is prevented from being lowered and the adhesive property is high. A semiconductor light emitting device can be obtained.
Next, the semiconductor light-emitting device and each component of the embodiment of the present invention will be described. Note that the features of each component can be applied independently or in combination.

<Semiconductor light emitting device>
1A and 1B are schematic views showing an example of a semiconductor light emitting device 100 according to an embodiment of the present invention. FIG. 1A is a plan view, and FIG. 1B is an AA ′ line in FIG. It is sectional drawing. In addition, in the top view of Fig.1 (a), the base part 21 in FIG.1 (b) is abbreviate | omitted.
As shown in FIG. 1, the semiconductor light emitting device 100 includes a semiconductor light emitting element 10 and a submount substrate 20.

FIG. 2 is a schematic view showing an example of the semiconductor light emitting device 10 in one embodiment of the present invention. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along the line AA ′ of FIG. 2A.
A semiconductor light emitting device 10 according to an embodiment of the present invention includes an element substrate 11 and a semiconductor laminated portion 12 having a mesa structure formed on the element substrate 11.

  The semiconductor stacked portion 12 is formed by stacking an n-type semiconductor layer 121, a light emitting layer 122, and a p-type semiconductor layer 123 in this order from the element substrate 11 side. As shown in FIG. 2A, the semiconductor laminated portion 12 has a laminated structure composed of an n-type semiconductor layer 121, a light emitting layer 122, and a p-type semiconductor layer 123 laminated on the element substrate 11. Is formed by etching while leaving a part of the n-type semiconductor layer 121 in a rectangular shape with an opening. The cross section AA ′ of the semiconductor laminated portion 12 has a mesa shape as shown in FIG.

The semiconductor light emitting device 10 further includes an electrode part 13 including a first electrode part 131 formed on the n-type semiconductor layer 121 and a second electrode part 132 formed on the p-type semiconductor layer 123.
The electrode unit 13 may further include a pad electrode unit in a region in contact with the bonding unit 22 of the submount substrate 20 described later.
The second electrode portion 132 formed on the p-type semiconductor layer 123 of the semiconductor stacked portion 12 is formed in a rectangular shape with one side open along the shape of the semiconductor stacked portion 12 as shown in FIG. Is done.

In addition, the first electrode portion 131 is formed by etching at the time of forming the semiconductor multilayer portion 12 between the parallel portion 12a and the parallel portion 12b corresponding to two parallel sides of a rectangle with one side open of the semiconductor multilayer portion 12. It is formed on the remaining n-type semiconductor layer 121.
On the other hand, the submount substrate 20 includes a base portion 21 as a support substrate of the semiconductor light emitting element 10 and an adhesive portion 22 as shown in FIG. A plurality of adhesive portions 22 are arranged at positions facing the second electrode portion 132 and the first electrode portion 131 on the parallel portions 12a and 12b of the semiconductor stacked portion 12, and the adhesive portion 22, the first electrode portion 131, and the second electrode portion By joining the electrode part 132, the submount substrate 20 and the semiconductor light emitting element 10 are electrically joined.

<Semiconductor light emitting device>
(Element board)
As the element substrate 11 in the semiconductor light emitting element 10 of one embodiment of the present invention, a sapphire substrate, an aluminum nitride substrate (AlN substrate) or the like can be adopted. In one embodiment of the present invention, a substrate having a low dislocation density is employed to improve reliability. When a heterogeneous substrate such as a sapphire substrate is used as the element substrate 11, in one embodiment of the present invention, an AlN buffer layer is formed by a well-known method such as a lateral overgrowth method or an ammonia pulse method, and the dislocation density is increased. Reduction is achieved.

(Semiconductor stacking part)
The mesa structure semiconductor stacked portion 12 in the semiconductor light emitting device 10 according to the embodiment of the present invention only needs to include at least the n type semiconductor layer 121, the light emitting layer 122, and the p type semiconductor layer 123. A layer may be provided.
For example, a function for blocking electrons or holes between one or both of the layers between the light-emitting layer 122 and the n-type semiconductor layer 121 or between the light-emitting layer 122 and the p-type semiconductor layer 123. A layer may be provided. In addition, from the viewpoint of improving ohmic contact with the submount substrate 20, the semiconductor stacked portion 12 may include a contact layer doped with impurities at a high concentration.

  In addition, the shape of the semiconductor laminated portion 12 is not particularly limited, but from the viewpoint of easily electrically connecting to the submount substrate 20 and taking out emitted light from the element substrate 11 side, according to an embodiment of the present invention. The semiconductor stacked portion 12 is formed in a single-stage or multi-stage mesa structure in cross-sectional view. Due to the mesa structure, it is possible to electrically connect the submount substrate 20 and the semiconductor light emitting element 10 in a so-called flip chip format. When the shape of the semiconductor stacked portion 12 is a mesa structure in a cross-sectional view, the shape of the semiconductor stacked portion 12 in a plan view is a rectangular shape, a circular or elliptical shape, a polygonal shape, and a combination thereof. It can be adopted.

The semiconductor stacked portion 12 can be formed by, for example, MOCVD (Metal Organic Chemical Vapor Deposition) method. The semiconductor laminated portion 12 can be realized in a mesa structure by etching a desired region after forming the thin film layer constituting the semiconductor laminated portion 12 by the above-described MOCVD method or the like.
From the viewpoint of efficiently applying power to the light emitting layer 122 from the outside, the semiconductor stacked portion 12 in one embodiment of the present invention is applied to one or both of the n-type semiconductor layer 121 and the p-type semiconductor layer 123. The first electrode part 131 and the second electrode part 132 that are electrically connected are provided.

As the first electrode portion 131 formed on the n-type semiconductor layer 121, in one embodiment of the present invention, a laminated body in which any one of titanium Ti, aluminum Al, nickel ni, gold Au, and the like is laminated. Is used. As the second electrode portion 132 formed on the p-type semiconductor layer 123, in one embodiment of the present invention, a stacked body in which nickel Ni and gold Au are stacked in this order from the p-type semiconductor layer 123 side is used. In addition, from the viewpoint of improving contact characteristics, in one embodiment of the present invention, the semiconductor light emitting device 10 is formed in a nitrogen atmosphere after laminating a material for forming the electrode part 13 to be the first electrode part 131 or the second electrode part 132. Alternatively, high temperature annealing is performed in an environment of 500 ° C. or higher in an oxygen atmosphere.
It is also possible to form a pad electrode portion mainly composed of gold Au on the first electrode portion 131 and the second electrode portion 132.

(N-type semiconductor layer, p-type semiconductor layer)
In one embodiment of the present invention, the n-type semiconductor layer 121 and the p-type semiconductor layer 123 included in the semiconductor stacked unit 12 are In _x Al _y Ga _1-xy N (0 ≦ x + y) indicating their respective conductivity types. ≦ 1). Specifically, the n-type semiconductor layer 121 and the p-type semiconductor layer 123 include GaN (x + y = 0), AlN (x = 0, y = 1), InN (x = 1, y = 0), In _x Al _y Ga _1-xy N (0 <x <1, 0 <y <1), Al _y Ga _1-y N (x = 0, 0 <y <1), In _x Ga _1-x N (0 <X <1, y = 0).
The n-type semiconductor layer 121 formed between the element substrate 11 and the light emitting layer 122 or the p-type semiconductor layer 123 stacked on the light emitting layer 122 approaches the lattice constant of the light emitting layer 122 from the lattice constant of the element substrate 11. As such, the composition may change continuously or discretely.

(Light emitting layer)
The light emitting layer 122 emits light corresponding to the band gap of the light emitting layer 122 when power is applied. The semiconductor light emitting device 100 according to an embodiment of the present invention is sufficient even if the semiconductor light emitting element 10 that emits ultraviolet rays having a central emission wavelength of 210 nm or more and 320 nm or less, in which reliability has been particularly a problem in the past, is used. Since reliability is ensured, it can be particularly preferably applied.
As an example of a preferable form of the light emitting layer 122, a multiple quantum well structure can be given. For example, a multiple quantum well structure in which a number of AlGaN layers having different composition ratios (different band gaps) are stacked can be employed.

(Adhesive part)
The bonding portion 22 is disposed on the base portion 21 so as to be electrically connected to a wiring (not shown) formed on the base portion 21. The bonding portion 22 is not particularly limited as long as it can electrically connect the semiconductor light emitting element 10 and the submount substrate 20. Moreover, a single material may be sufficient and the mixture or laminated body of several materials may be sufficient.

From the viewpoint of firmly bonding the semiconductor light emitting element 10 and the submount substrate 20 while arbitrarily aligning them, in one embodiment of the present invention, the bonding portion 22 is temporarily caused by external factors such as pressure, heat, and light. It has the property of softening and then curable.
In FIG. 1, the bonding portion 22 is provided on the submount substrate 20 side, but is not limited thereto.

  As the bonding portion 22, for example, a metal portion disposed on the submount substrate 20 side, that is, the base portion 21, specifically, an electrode portion formed on the base portion 21, a pad portion formed on the electrode portion, A bump part and a solder part may be used as the bonding part 22. Further, a metal part arranged on the semiconductor light emitting element 10 side, specifically, electrode parts 131 and 132, pad parts or bump parts (not shown) further formed on the electrode parts 131 and 132, and a solder part are bonded to the bonding part. 22 may be diverted, or a combination thereof may be diverted as the adhesive portion 22.

(Submount substrate)
The submount substrate 20 is electrically connected to the semiconductor light emitting element 10. From the viewpoint of improving heat dissipation of the semiconductor light emitting device 100, in one embodiment of the present invention, the base portion 21 is formed from a material having high heat dissipation. An example of a material having high heat dissipation is AlN ceramic. From the viewpoint of easily electrically connecting the submount substrate 20 and the semiconductor light emitting element 10, as described above, in one embodiment of the present invention, the submount substrate 20 is formed on the base portion 21 as the bonding portion 22. Has a plurality of metal parts. As the metal part, a spherical or columnar bump containing gold Au can be applied.

  The semiconductor light emitting element 10 and the submount substrate 20 are electrically connected via a plurality of adhesive portions 22. The semiconductor light emitting element 10 and the submount substrate 20 are connected to each other by flip-chip bonding via an adhesive portion 22 made of, for example, gold bumps, and the bonding method is generally performed by a well-known method. For example, gold bumps are formed on the first electrode portion 131 and the second electrode portion 132 of the semiconductor light emitting element 10 by a wire bumping method using a gold wire. On the other hand, on the side of the submount substrate 20, gold plating or solder is prepared as an adhesive part 22 on the base part 21, and after aligning the adhesive part 22, heat is applied while applying pressure using a flip chip bonder. In addition, adhere. For example, after gold plating of about 0.3 μm on the base portion 21, a gold bump is formed as the bonding portion 22 with a φ25 mm gold wire, and the submount substrate 20 and the semiconductor light emitting device are formed using the bonding portion 22 formed of the gold bump. When adhering to the element 10, good adhesion can be obtained by heating for 15 seconds in an environment of about 250 ° C. under a pressure of 70 g per bump. This actual numerical value is an example, and an optimal value may be selected depending on various conditions such as electrode dimensions and bump forming gold wire diameter.

  In the semiconductor light emitting device 100, the bonding portion 22 is the sum of the areas of the plurality of bonding portions 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12 in plan view, that is, the bonded portion on the semiconductor stacked portion 12. The total area 22 is arranged so as to be 10% or more and 50% or less of the light emitting area of the light emitting layer 122. Incidentally, in FIG. 1, the total area of the six bonding portions 22 arranged on the parallel portions 12 a and 12 b is the total area of the bonding portions 22, which is about 30% of the light emitting area of the light emitting layer 122. Yes.

In addition, each of the bonding portions 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12 in a plan view is arranged such that the edge of the bonding portion 22 is inside the edge of the upper surface of the mesa structure. . That is, by arranging the bonding portion 22 so that the edge of the bonding portion 22 is inside the edge of the upper surface of the mesa structure, for example, the bonding portion 22 disposed on the parallel portion 12a and the first electrode portion 131 or the adhesion part 22 arrange | positioned on the 1st electrode part 131 is prevented.
Furthermore, in the semiconductor light emitting device 100, the height of the bonding portion 22, that is, the thickness, is, for example, that the bonding portion 22 disposed on the first electrode portion 131 is bonded to the bonding portion 22 disposed on the second electrode portion 132. The thickness is appropriately set within a range where the second electrode portion 132 and the like are in contact with an unintended portion of the semiconductor light emitting element 10 and do not cause a failure such as an electrical short circuit.

  In this way, a power supply (not shown) is connected to the base portion 21 or to the base portion 21 in a state where the bonding portion 22 of the submount substrate 20 and the electrode portion 13 of the semiconductor light emitting element 10 are electrically connected. To the first electrode portion 131 and the second electrode portion 132 of the semiconductor light-emitting element 10 through the bonding portion 22 via the wiring (not shown) formed in the base portion 21. When power is supplied to the element 10, light is generated in the light emitting layer 122 of the semiconductor light emitting element 10 and is output to the outside from the element substrate 11 side. Further, heat generated in the semiconductor light emitting element 10 is conducted to the base portion 21 side through the bonding portion 22 and is released to the outside.

<Device>
An apparatus according to an embodiment of the present invention includes a semiconductor light emitting device according to an embodiment of the present invention.
The semiconductor light emitting device according to one embodiment of the present invention can be applied to various devices.
The semiconductor light-emitting device according to an embodiment of the present invention can be applied to and replaced by all existing devices in which an ultraviolet lamp is used. In particular, the present invention can be applied to an apparatus using deep ultraviolet light having a wavelength of 280 nm or less.
The semiconductor light emitting device according to an embodiment of the present invention can be applied to, for example, devices in the medical / life science field, the environmental field, the industrial / industrial field, the life / home appliance field, the agricultural field, and other fields.

  A semiconductor light emitting device according to an embodiment of the present invention includes a chemical / chemical substance synthesis / decomposition device, a liquid / gas / solid (container, food, medical device, etc.) sterilizer, a semiconductor cleaning device, a film / glass / Surface modification equipment for metals, etc., exposure equipment for manufacturing semiconductors, flat panel displays (FPD), printed circuit boards (PCBs) and other electronic products, printing / coating equipment, adhesion / sealing equipment, films / patterns / mockups, etc. It can be applied to transfer / molding devices and measuring / inspecting devices for banknotes / scratches / blood / chemical substances.

  Examples of liquid sterilizers include automatic ice making equipment, ice trays, ice storage containers, water storage tanks for ice making machines, ice making machines, freezers, ice making machines, humidifiers, dehumidifiers, water server cold water tanks, hot water tanks, flow paths Pipes, stationary water purifiers, portable water purifiers, water heaters, water heaters, wastewater treatment devices, disposers, toilet drainage traps, washing machines, dialysis water sterilization modules, peritoneal dialysis connector sterilizers, disaster water storage systems, etc. This is not the case.

Examples of gas sterilizers include air purifiers, air conditioners, ceiling fans, floor and bedding vacuum cleaners, futon dryers, shoe dryers, washing machines, clothes dryers, indoor sterilization lights, and storage cabinets. A ventilation system, a shoe box, a chiffon, etc. are mentioned, but not limited to this.
Examples of solid sterilizers (including surface sterilizers) include vacuum packers, belt conveyors, medical / dental / barber / beauty salon hand tool sterilizers, toothbrushes, toothbrush holders, chopstick boxes, cosmetic pouches, Examples include, but are not limited to, drainage lids, toilet bowl cleaners, toilet lids, and the like.

Hereinafter, the semiconductor light emitting device in one embodiment of the present invention will be described more specifically with reference to examples and comparative examples. In addition, this invention is not limited to each Example demonstrated below.
[Example 1]
As one embodiment of the present invention, the following semiconductor light emitting device 100 was fabricated. Here, the bonding portion 22 is provided on the semiconductor light emitting element 10 side.

  An AlN single crystal substrate as the element substrate 11, an n-type AlGaN layer (corresponding to the n-type semiconductor layer 121) formed on the element substrate 11, an AlGaN stack having a multiple quantum well structure (corresponding to the light emitting layer 122), and A semiconductor light emitting device 100 including a mesa structure semiconductor laminated portion 12 in which a p-type GaN layer (corresponding to the p-type semiconductor layer 123) was laminated in order from the element substrate 11 side was produced. On the n-type AlGaN layer (121), an n-type electrode portion (first electrode) made of a laminate in which 20 nm titanium Ti, 150 nm aluminum Al, 30 nm nickel Ni, and 50 nm gold Au are laminated in this order. Electrode section 131) and a p-type electrode section (corresponding to the second electrode section 132) made of a laminate of 20 nm nickel Ni and 35 nm gold Au formed on the p-type GaN layer (123). Provided. Further, a pad electrode portion made of 1000 nm gold Au was formed on the n-type electrode portion (131) and the p-type electrode portion (132). On this pad electrode, a gold bump (corresponding to the bonding portion 22) obtained by wire bumping a gold wire of 25 mmφ was provided.

On the other hand, a gold plating of about 0.3 μm was produced on the base portion 21 on the submount substrate 20 side.
Then, each gold bump (22) is heated at 250 ° C. for 15 seconds while being pressurized with 70 g, thereby bonding the gold plating on the submount substrate 20 side and the bonding portion 22 formed on the semiconductor light emitting element 10 side to bond the submount. The substrate 20 and the semiconductor light emitting device 10 were joined.

In the manufactured semiconductor light emitting device 100, as a result of comparing the area of the light emitting layer 122 in plan view, that is, the light emitting area when power is applied to the semiconductor stacked portion 12, and the total area of the bonding portion 22, The total area of the gold bumps (adhesive portion 22) disposed on the top surface of the twelve mesa structures accounted for 50% of the light emitting area of the light emitting layer 122.
The obtained semiconductor light emitting device 100 was a device that emits ultraviolet rays having a central emission wavelength of 270 nm.

About the semiconductor light-emitting device 100 obtained as mentioned above, the reliability test was done by 100 mA continuous electricity supply in 25 degreeC environment. As a result of this test, the light output deterioration rate was 70% or less.
Further, an external force is applied to the side surface of the element substrate 11 of the semiconductor light emitting device 100 obtained by the same method at a rate of 20 mm per second in a direction parallel to the main surface of the element substrate 11 by a Dage bond tester “4000”. As a result, the semiconductor light emitting device 10 was peeled off from the submount substrate 20 when an external force of 1100 g was applied.

[Example 2]
The light emitting area of the light emitting layer 122 is changed by changing the number of gold bumps as the bonding portions 22 formed on the semiconductor light emitting element 10 side and changing the number of bonding portions 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12. The semiconductor light emitting device 100 was manufactured by the same method as in Example 1 except that the ratio of the total area of the bonding portion 22 was changed to 15%.
The manufactured semiconductor light emitting device 100 was evaluated in the same manner as in Example 1. As a result, the light output deterioration rate was 70% or less, and when an external force of 560 g was applied, the semiconductor light emitting element 10 was peeled from the submount substrate 20. did.

[Example 3]
The light emitting area of the light emitting layer 122 is changed by changing the number of gold bumps as the bonding portions 22 formed on the semiconductor light emitting element 10 side and changing the number of bonding portions 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12. The semiconductor light emitting device 100 was manufactured by the same method as in Example 1 except that the ratio of the total area of the bonding portion 22 was changed to 10%.
The manufactured semiconductor light emitting device 100 was evaluated by the same method as in Example 1. As a result, the light output deterioration rate was 70% or less, and when the external force of 440 g was applied, the semiconductor light emitting element 10 was peeled from the submount substrate 20. did.

[Comparative Example 1]
The light emitting area of the light emitting layer 122 is changed by changing the number of gold bumps as the bonding portions 22 formed on the semiconductor light emitting element 10 side and changing the number of bonding portions 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12. The semiconductor light emitting device 100 was manufactured by the same method as in Example 1 except that the ratio of the total area of the bonding portion 22 to 5% was changed to 5%.
The manufactured semiconductor light emitting device 100 was evaluated by the same method as in Example 1. As a result, the light output deterioration rate was 50% or more, and when an external force of 350 g was applied, the semiconductor light emitting element 10 was peeled from the submount substrate 20. did.

[Comparative Example 2]
Next, a second comparative example will be described.
In the second comparative example, the semiconductor light emitting device 100 was manufactured in the same manner as in Example 1 except that the diameter of the gold wire at the time of manufacturing the gold bump as the bonding portion 22 was 40 mmφ.
As a result of conducting an energization test on the manufactured semiconductor light emitting device 100, no light was emitted due to poor electrical characteristics. As a result of checking the semiconductor light emitting device 100, the cause was that the gold bump (22) protruded from the edge of the p-type electrode portion (132) and was in contact with the n-type electrode portion (131).

From the evaluation results of Examples 1 to 3 and Comparative Examples 1 and 2 described above, in the semiconductor light emitting device 100, the total area of the bonding portion 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12 in plan view is The light emitting area of the light emitting layer 122 is not less than 10% and not more than 50%, and each edge of the bonding portion 22 arranged on the upper surface of the mesa structure of the semiconductor stacked portion 12 has the mesa structure of the semiconductor stacked portion 12. It was confirmed that a highly reliable semiconductor light emitting device can be manufactured by arranging the bonding portion 22 so as to be inside the edge of the upper surface.
On the other hand, in order to increase the total area of the bonding portion 22, if the diameter of the gold wire serving as the gold bump as the bonding portion 22 is increased to a certain level or more, the gold bump as the bonding portion 22 becomes the semiconductor laminated portion 12. It was confirmed that the rate of electrical property failure due to short-circuiting protruded from the top edge of the mesa structure.

(Summary)
As described above, the semiconductor light emitting device 100 according to the embodiment of the present invention has a strong adhesion between the semiconductor light emitting element 10 and the submount substrate 20 side and heat dissipation as compared with the conventional semiconductor light emitting device. It was confirmed that it improved. Therefore, the semiconductor light-emitting device 100 according to an embodiment of the present invention can be applied as a highly reliable light-emitting device that emits deep ultraviolet light of about 210 nm to 320 nm and is preferably used for sterilization, bioanalysis, and the like. it can.

Although the embodiments of the present invention have been described so far, it is needless to say that the present invention is not limited to the above-described embodiments, and may be implemented in various forms within the scope of the technical idea.
In addition, the scope of the present invention is not limited to the illustrated and described exemplary embodiments, and includes all embodiments that provide the same effects as those intended by the present invention. Further, the scope of the invention is not limited to the combinations of features of the invention defined by the claims, but may be defined by any desired combination of specific features among all the disclosed features. .

  The present invention can be used for a flip-chip type semiconductor light emitting device, and is suitably used for, for example, sterilization and bioanalysis.

DESCRIPTION OF SYMBOLS 10 Semiconductor light emitting element 11 Element substrate 12 Semiconductor laminated part 121 N type semiconductor layer 122 Light emitting layer 123 P type semiconductor layer 13 Electrode part 131 First electrode part 132 Second electrode part 20 Submount substrate 21 Base part 22 Adhesion part 100 Semiconductor light emission apparatus

Claims (5)

An element substrate, and a semiconductor laminated portion having a mesa structure in which an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are laminated on the element substrate in this order from the element substrate side. A semiconductor light emitting device that emits light;
A submount substrate electrically connected to the semiconductor light emitting element through a plurality of adhesive portions;
With
In plan view, the total area of the plurality of bonding portions arranged on the upper surface of the mesa structure is 10% or more and 50% or less of the light emitting area of the light emitting layer, and is arranged on the upper surface of the mesa structure. In addition, the semiconductor light emitting device in which an edge of each of the bonding portions is inside an edge of an upper surface of the mesa structure.   2. The semiconductor light emitting device according to claim 1, wherein a central emission wavelength of light emitted from the semiconductor light emitting element is 210 nm or more and 320 nm or less.   The semiconductor light emitting device according to claim 1, wherein the element substrate includes an AlN single crystal substrate or a sapphire substrate. 4. The semiconductor light emitting device according to claim 1, wherein the semiconductor stacked portion includes an In _x Al _y Ga _1-xy N (0 ≦ x + y ≦ 1) layer. 5.   The apparatus provided with the semiconductor light-emitting device of any one of Claims 1-4.

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