JP2016171141A - 窒化物発光素子および窒化物発光素子の製造方法 - Google Patents

窒化物発光素子および窒化物発光素子の製造方法 Download PDF

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JP2016171141A
JP2016171141A JP2015048725A JP2015048725A JP2016171141A JP 2016171141 A JP2016171141 A JP 2016171141A JP 2015048725 A JP2015048725 A JP 2015048725A JP 2015048725 A JP2015048725 A JP 2015048725A JP 2016171141 A JP2016171141 A JP 2016171141A
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protective film
nitride
light emitting
nitride semiconductor
emitting element
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JP2016171141A5 (enrdf_load_stackoverflow
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伊藤　由人
Yoshito Ito
由人 伊藤
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Asahi Kasei Corp
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Asahi Kasei Corp
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JP2015048725A 2015-03-11 2015-03-11 窒化物発光素子および窒化物発光素子の製造方法 Pending JP2016171141A (ja)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10686294B2 (en) 2018-02-22 2020-06-16 Nichia Corporation Semiconductor element and method of manufacturing the same
JP7370438B1 (ja) 2022-10-05 2023-10-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7370437B1 (ja) 2022-10-05 2023-10-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218928A (ja) * 1990-05-18 1992-08-10 Seiko Epson Corp 薄膜半導体装置とその製造方法及びシリコン薄膜堆積法
JPH0655737A (ja) * 1991-10-15 1994-03-01 Canon Inc 液体噴射記録ヘッド用基体、その製造方法および液体噴射記録ヘッドならびに液体噴射記録装置
JPH0764030A (ja) * 1993-08-24 1995-03-10 Sumitomo Osaka Cement Co Ltd 導波路型光素子実装筺体構造物
JPH07304127A (ja) * 1994-05-13 1995-11-21 Toppan Printing Co Ltd ガスバリヤー性包装材料およびその製造方法
JPH098348A (ja) * 1995-06-16 1997-01-10 Stanley Electric Co Ltd 発光ダイオード及びその製造方法
JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
JPH10215003A (ja) * 1997-01-31 1998-08-11 Stanley Electric Co Ltd Ｌｅｄチップ
JPH10303460A (ja) * 1997-02-27 1998-11-13 Toshiba Corp 半導体素子およびその製造方法
JP2001141950A (ja) * 1999-09-02 2001-05-25 Hitachi Cable Ltd 光導波路及びその製造方法
JP2001284644A (ja) * 2000-03-30 2001-10-12 Nichia Chem Ind Ltd 発光素子および発光素子パッケージ
US20080308832A1 (en) * 2007-06-14 2008-12-18 Epistar Corporation Light-emitting device
JP2011155084A (ja) * 2010-01-26 2011-08-11 Panasonic Electric Works Co Ltd 紫外半導体発光素子
JP2012049337A (ja) * 2010-08-26 2012-03-08 Sharp Corp 窒化物半導体素子および半導体光学装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218928A (ja) * 1990-05-18 1992-08-10 Seiko Epson Corp 薄膜半導体装置とその製造方法及びシリコン薄膜堆積法
JPH0655737A (ja) * 1991-10-15 1994-03-01 Canon Inc 液体噴射記録ヘッド用基体、その製造方法および液体噴射記録ヘッドならびに液体噴射記録装置
JPH0764030A (ja) * 1993-08-24 1995-03-10 Sumitomo Osaka Cement Co Ltd 導波路型光素子実装筺体構造物
JPH07304127A (ja) * 1994-05-13 1995-11-21 Toppan Printing Co Ltd ガスバリヤー性包装材料およびその製造方法
JPH098348A (ja) * 1995-06-16 1997-01-10 Stanley Electric Co Ltd 発光ダイオード及びその製造方法
JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
JPH10215003A (ja) * 1997-01-31 1998-08-11 Stanley Electric Co Ltd Ｌｅｄチップ
JPH10303460A (ja) * 1997-02-27 1998-11-13 Toshiba Corp 半導体素子およびその製造方法
JP2001141950A (ja) * 1999-09-02 2001-05-25 Hitachi Cable Ltd 光導波路及びその製造方法
JP2001284644A (ja) * 2000-03-30 2001-10-12 Nichia Chem Ind Ltd 発光素子および発光素子パッケージ
US20080308832A1 (en) * 2007-06-14 2008-12-18 Epistar Corporation Light-emitting device
JP2011155084A (ja) * 2010-01-26 2011-08-11 Panasonic Electric Works Co Ltd 紫外半導体発光素子
JP2012049337A (ja) * 2010-08-26 2012-03-08 Sharp Corp 窒化物半導体素子および半導体光学装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10686294B2 (en) 2018-02-22 2020-06-16 Nichia Corporation Semiconductor element and method of manufacturing the same
JP7370438B1 (ja) 2022-10-05 2023-10-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7370437B1 (ja) 2022-10-05 2023-10-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2024054527A (ja) * 2022-10-05 2024-04-17 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2024054528A (ja) * 2022-10-05 2024-04-17 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

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