JP2016162795A - プラズマ処理装置およびプラズマ処理方法 - Google Patents
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Abstract
【解決手段】真空容器内部の処理室内に配置された試料台と、当該試料台の内側で中心側の部分とその外周側部分に配置され高周波電力が供給される電極とを備え、前記試料台上面に載置したウエハを当該処理室内に形成したプラズマを用いて処理するプラズマ処理装置であって、前記中心側の電極及び外周側の電極の各々に供給される高周波電力は各々が振幅が所定の周期で大小を繰り返すものであって、前記高周波電力各々の振幅の大きな期間の長さまたは当該期間の長さとその周期に対する比率を異なる値に調節する制御装置とを備えた。
【選択図】図1
Description
この表からは、例えば、求められるエッチング性能がPolyエッチレート均一性:2%以下、OX選択比:30以上の場合、No.1、No.2の高周波バイアス条件ではこれらを満足できないことが判る。
Claims (8)
- 真空容器内部の処理室内に配置された試料台と、当該試料台の内側で中心側の部分とその外周側部分に配置され高周波電力が供給される電極とを備え、前記試料台上面に載置したウエハを当該処理室内に形成したプラズマを用いて処理するプラズマ処理装置であって、
前記中心側の電極及び外周側の電極の各々に供給される高周波電力は各々が振幅が所定の周期で大小を繰り返すものであって、前記高周波電力各々の振幅の大きな期間の長さまたは当該期間の長さとその周期に対する比率を異なる値に調節する制御装置とを備えたプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記中心側の電極及び外周側の電極の各々に供給される高周波電力各々は、一方の振幅の大きな期間が終了後に他方の振幅が大きな期間が開始されるプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記高周波電力を供給する高周波電源からの出力が、前記中心側の電極及び外周側の電極の各々に供給される前記高周波電力の前記振幅の前記周期とは異なる周期で振幅が大小を繰り返すものであって、
前記中心側の電極及び外周側の電極の各々に供給される高周波電力各々の振幅の大きな期間が前記高周波電源からの出力が異なる周期で繰り返す振幅が大きな期間内に含まれるプラズマ処理装置。
- 請求項1乃至3の何れかに記載のプラズマ処理装置であって、
前記中心側の電極及び外周側の電極の各々に供給される前記高周波電力は各々が所定の振幅となるオン状態と0となるオフ状態とを前記周期で繰り返すプラズマ処理装置。
- 真空容器内部の処理室内に試料台上に処理対象のウエハを配置し、当該処理室内にプラズマを形成して前記試料台の内側の中心側の部分とその外周側部分に配置された電極とに高周波電力を供給して前記ウエハを処理するプラズマ処理方法であって、
前記中心側の電極及び外周側の電極の各々に供給される高周波電力は各々が振幅が所定の周期で大小を繰り返すものであって、前記高周波電力各々の振幅の大きな期間の長さまたは当該期間の長さとその周期に対する比率を異なる値に調節して前記ウエハを処理するプラズマ処理方法。
- 請求項5に記載のプラズマ処理方法であって、
前記中心側の電極及び外周側の電極の各々に供給される高周波電力各々は、一方の振幅の大きな期間が終了後に他方の振幅が大きな期間が開始されるプラズマ処理方法。
- 請求項5に記載のプラズマ処理方法であって、
前記高周波電力を供給する高周波電源からの出力が、前記中心側の電極及び外周側の電極の各々に供給される前記高周波電力の前記振幅の前記周期とは異なる周期で振幅が大小を繰り返すものであって、
前記中心側の電極及び外周側の電極の各々に供給される高周波電力各々の振幅の大きな期間が前記高周波電源からの出力が異なる周期で繰り返す振幅が大きな期間内に含まれるプラズマ処理方法。
- 請求項5乃至7の何れかに記載のプラズマ処理方法であって、
前記中心側の電極及び外周側の電極の各々に供給される前記高周波電力は各々が所定の振幅となるオン状態と0となるオフ状態とを前記周期で繰り返すプラズマ処理方法。
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KR1020150122020A KR101750002B1 (ko) | 2015-02-27 | 2015-08-28 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US14/846,736 US9741579B2 (en) | 2015-02-27 | 2015-09-05 | Plasma processing apparatus and plasma processing method |
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JP2019057547A (ja) * | 2017-09-20 | 2019-04-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
JP2019134021A (ja) * | 2018-01-30 | 2019-08-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2021086991A (ja) * | 2019-11-29 | 2021-06-03 | スピードファム株式会社 | エッチング装置、およびエッチング方法 |
JPWO2021157051A1 (ja) * | 2020-02-07 | 2021-08-12 |
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JP6491888B2 (ja) * | 2015-01-19 | 2019-03-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
KR20210034095A (ko) * | 2018-08-17 | 2021-03-29 | 램 리써치 코포레이션 | 기판 벌크 저항률 변동들에 응답하여 증착 레이트 또는 에칭 레이트 변화들을 감소시키기 위한 rf 전력 보상 |
KR20210016946A (ko) * | 2019-08-06 | 2021-02-17 | 삼성전자주식회사 | 샤워헤드 및 이를 구비하는 기판 처리장치 |
KR102258361B1 (ko) * | 2019-09-10 | 2021-05-28 | 포항공과대학교 산학협력단 | 펄스형 전력을 사용한 플라즈마 활성종 생성방법 |
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JP2019134021A (ja) * | 2018-01-30 | 2019-08-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP6997642B2 (ja) | 2018-01-30 | 2022-01-17 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
JP2021086991A (ja) * | 2019-11-29 | 2021-06-03 | スピードファム株式会社 | エッチング装置、およびエッチング方法 |
JP7348640B2 (ja) | 2019-11-29 | 2023-09-21 | スピードファム株式会社 | エッチング装置、およびエッチング方法 |
JPWO2021157051A1 (ja) * | 2020-02-07 | 2021-08-12 | ||
WO2021157051A1 (ja) * | 2020-02-07 | 2021-08-12 | 株式会社日立ハイテク | プラズマ処理装置及びプラズマ処理方法 |
JP7085031B2 (ja) | 2020-02-07 | 2022-06-15 | 株式会社日立ハイテク | プラズマ処理装置及びプラズマ処理方法 |
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KR20160105272A (ko) | 2016-09-06 |
JP6488150B2 (ja) | 2019-03-20 |
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US9741579B2 (en) | 2017-08-22 |
US20160254163A1 (en) | 2016-09-01 |
KR101750002B1 (ko) | 2017-06-22 |
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