JP2016157879A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016157879A5 JP2016157879A5 JP2015035939A JP2015035939A JP2016157879A5 JP 2016157879 A5 JP2016157879 A5 JP 2016157879A5 JP 2015035939 A JP2015035939 A JP 2015035939A JP 2015035939 A JP2015035939 A JP 2015035939A JP 2016157879 A5 JP2016157879 A5 JP 2016157879A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- crystalline oxide
- semiconductor film
- film
- film according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000003595 mist Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000010431 corundum Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015035939A JP2016157879A (ja) | 2015-02-25 | 2015-02-25 | 結晶性酸化物半導体膜、半導体装置 |
| JP2019227437A JP6980183B2 (ja) | 2015-02-25 | 2019-12-17 | 結晶性酸化物半導体膜、半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015035939A JP2016157879A (ja) | 2015-02-25 | 2015-02-25 | 結晶性酸化物半導体膜、半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019227437A Division JP6980183B2 (ja) | 2015-02-25 | 2019-12-17 | 結晶性酸化物半導体膜、半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016157879A JP2016157879A (ja) | 2016-09-01 |
| JP2016157879A5 true JP2016157879A5 (enExample) | 2018-04-19 |
Family
ID=56826703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015035939A Pending JP2016157879A (ja) | 2015-02-25 | 2015-02-25 | 結晶性酸化物半導体膜、半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2016157879A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3960914A4 (en) * | 2019-04-24 | 2022-12-28 | NGK Insulators, Ltd. | Semiconductor film |
| JP6925548B1 (ja) * | 2020-07-08 | 2021-08-25 | 信越化学工業株式会社 | 酸化ガリウム半導体膜の製造方法及び成膜装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714771A (ja) * | 1993-06-26 | 1995-01-17 | Taiyo Yuden Co Ltd | 薄膜形成方法及び装置 |
| JP6142358B2 (ja) * | 2011-09-08 | 2017-06-07 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系半導体素子 |
| JP6152514B2 (ja) * | 2013-10-17 | 2017-06-28 | 株式会社Flosfia | 半導体装置及びその製造方法、並びに結晶及びその製造方法 |
-
2015
- 2015-02-25 JP JP2015035939A patent/JP2016157879A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hickson et al. | Methylacetylene (CH3CCH) and propene (C3H6) formation in cold dense clouds: A case of dust grain chemistry | |
| CR20140447A (es) | Concepto de soldadura fuerte novedoso | |
| JP2014198460A5 (enExample) | ||
| JP2013540090A5 (enExample) | ||
| CA2889623C (en) | Thermal spraying of ceramic materials | |
| EP3095788A3 (en) | Organoaminosilane precursors and methods for depositing films comprising same | |
| WO2011155858A3 (en) | Method of graphene manufacturing | |
| WO2012112927A3 (en) | Methods of forming semiconductor films including i2-ii-iv-vi4 and i2-(ii,iv)-iv-vi4 semiconductor films and electronic devices including the semiconductor films | |
| EA201990271A1 (ru) | Термическое напыление керамических материалов | |
| CA3010098A1 (en) | Formation of solid salts using high gas flow velocities in humidifiers, such as multi-stage bubble column humidifiers | |
| GB2530675A (en) | Integrated thermoelectric cooling | |
| JP2015199649A5 (enExample) | ||
| JP2016157878A5 (enExample) | ||
| JP2015017027A5 (enExample) | ||
| BR112014018034A8 (pt) | Método para a aspersão de gás frio | |
| JP2015079945A5 (enExample) | ||
| RU2015141001A (ru) | Способ получения поверхностно-обработанного материала из металлического титана или материала из титанового сплава и поверхностно-обработанный материал | |
| JP2015046595A5 (enExample) | ||
| JP2016157879A5 (enExample) | ||
| JP2017022294A5 (enExample) | ||
| JP2017019094A5 (ja) | 表面被覆切削工具の製造方法 | |
| JP2015522509A5 (enExample) | ||
| TW200802551A (en) | Semiconductor layer, process for forming the same, and semiconductor light emitting device | |
| JP2015053452A5 (enExample) | ||
| JP2016155963A5 (enExample) |