JP2017069424A5 - - Google Patents

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Publication number
JP2017069424A5
JP2017069424A5 JP2015194330A JP2015194330A JP2017069424A5 JP 2017069424 A5 JP2017069424 A5 JP 2017069424A5 JP 2015194330 A JP2015194330 A JP 2015194330A JP 2015194330 A JP2015194330 A JP 2015194330A JP 2017069424 A5 JP2017069424 A5 JP 2017069424A5
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JP
Japan
Prior art keywords
semiconductor film
film according
crystalline semiconductor
plane
crystalline
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JP2015194330A
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English (en)
Japanese (ja)
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JP2017069424A (ja
JP6945121B2 (ja
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Publication of JP2017069424A5 publication Critical patent/JP2017069424A5/ja
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JP2015194330A 2015-09-30 2015-09-30 結晶性半導体膜および半導体装置 Active JP6945121B2 (ja)

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Application Number Priority Date Filing Date Title
JP2015194330A JP6945121B2 (ja) 2015-09-30 2015-09-30 結晶性半導体膜および半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015194330A JP6945121B2 (ja) 2015-09-30 2015-09-30 結晶性半導体膜および半導体装置

Publications (3)

Publication Number Publication Date
JP2017069424A JP2017069424A (ja) 2017-04-06
JP2017069424A5 true JP2017069424A5 (enExample) 2018-11-22
JP6945121B2 JP6945121B2 (ja) 2021-10-06

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JP2015194330A Active JP6945121B2 (ja) 2015-09-30 2015-09-30 結晶性半導体膜および半導体装置

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JP (1) JP6945121B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6934852B2 (ja) * 2018-12-18 2021-09-15 信越化学工業株式会社 酸化ガリウム膜の製造方法
JP7179294B2 (ja) * 2019-04-12 2022-11-29 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法
WO2020217563A1 (ja) * 2019-04-24 2020-10-29 日本碍子株式会社 半導体膜
JP7066658B2 (ja) * 2019-06-14 2022-05-13 信越化学工業株式会社 酸化物半導体膜の製造方法
JP7289357B2 (ja) * 2019-09-02 2023-06-09 日本碍子株式会社 半導体膜
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
JP7708348B2 (ja) * 2020-06-30 2025-07-15 株式会社Flosfia 結晶性酸化物膜および半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120045661A1 (en) * 2010-08-19 2012-02-23 Raveen Kumaran Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods
WO2013035843A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ2Ｏ3系半導体素子
WO2013035472A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 エピタキシャル成長用基板及び結晶積層構造体
JP5948581B2 (ja) * 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP6152514B2 (ja) * 2013-10-17 2017-06-28 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法
JP2015164158A (ja) * 2014-02-28 2015-09-10 株式会社Flosfia 半導体装置用積層構造体、半導体装置
CN106796891B (zh) * 2014-09-02 2020-07-17 株式会社Flosfia 层叠结构体及其制造方法、半导体装置、以及晶体膜
JP6967213B2 (ja) * 2015-04-10 2021-11-17 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置

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