JP2016157878A5 - - Google Patents

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Publication number
JP2016157878A5
JP2016157878A5 JP2015035938A JP2015035938A JP2016157878A5 JP 2016157878 A5 JP2016157878 A5 JP 2016157878A5 JP 2015035938 A JP2015035938 A JP 2015035938A JP 2015035938 A JP2015035938 A JP 2015035938A JP 2016157878 A5 JP2016157878 A5 JP 2016157878A5
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JP
Japan
Prior art keywords
oxide semiconductor
layer
semiconductor film
main component
crystalline oxide
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JP2015035938A
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English (en)
Japanese (ja)
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JP2016157878A (ja
JP6876895B2 (ja
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Publication of JP2016157878A5 publication Critical patent/JP2016157878A5/ja
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JP2015035938A 2015-02-25 2015-02-25 結晶性酸化物半導体膜、半導体装置 Active JP6876895B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015035938A JP6876895B2 (ja) 2015-02-25 2015-02-25 結晶性酸化物半導体膜、半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015035938A JP6876895B2 (ja) 2015-02-25 2015-02-25 結晶性酸化物半導体膜、半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019226565A Division JP7016489B2 (ja) 2019-12-16 2019-12-16 結晶性酸化物半導体膜、半導体装置

Publications (3)

Publication Number Publication Date
JP2016157878A JP2016157878A (ja) 2016-09-01
JP2016157878A5 true JP2016157878A5 (OSRAM) 2018-04-19
JP6876895B2 JP6876895B2 (ja) 2021-05-26

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ID=56826701

Family Applications (1)

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JP2015035938A Active JP6876895B2 (ja) 2015-02-25 2015-02-25 結晶性酸化物半導体膜、半導体装置

Country Status (1)

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JP (1) JP6876895B2 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
JP7160318B2 (ja) * 2018-08-01 2022-10-25 国立研究開発法人物質・材料研究機構 半導体装置および半導体装置の製造方法
JP6934852B2 (ja) * 2018-12-18 2021-09-15 信越化学工業株式会社 酸化ガリウム膜の製造方法
CN113677834A (zh) * 2019-04-24 2021-11-19 日本碍子株式会社 半导体膜
WO2020261574A1 (ja) * 2019-06-28 2020-12-30 日本碍子株式会社 半導体膜
JPWO2022064783A1 (OSRAM) * 2020-09-24 2022-03-31
WO2023053817A1 (ja) 2021-09-30 2023-04-06 信越化学工業株式会社 積層構造体、半導体装置及び結晶性酸化物膜の成膜方法
JPWO2024122463A1 (OSRAM) 2022-12-06 2024-06-13

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3929964B2 (ja) * 2003-11-14 2007-06-13 独立行政法人科学技術振興機構 薄膜積層構造体の製造方法
JP2009013028A (ja) * 2007-07-06 2009-01-22 Nippon Light Metal Co Ltd 酸化アルミニウム−酸化ガリウム固溶体およびその製造方法
JP5665676B2 (ja) * 2011-07-11 2015-02-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法
JP6142358B2 (ja) * 2011-09-08 2017-06-07 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
JP5397795B1 (ja) * 2013-06-21 2014-01-22 Ｒｏｃａ株式会社 半導体装置及びその製造方法、結晶及びその製造方法
JP6152514B2 (ja) * 2013-10-17 2017-06-28 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法

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