JP2016132596A - 単結晶製造装置 - Google Patents
単結晶製造装置 Download PDFInfo
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- JP2016132596A JP2016132596A JP2015008728A JP2015008728A JP2016132596A JP 2016132596 A JP2016132596 A JP 2016132596A JP 2015008728 A JP2015008728 A JP 2015008728A JP 2015008728 A JP2015008728 A JP 2015008728A JP 2016132596 A JP2016132596 A JP 2016132596A
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- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 24
- 230000006698 induction Effects 0.000 claims description 20
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 239000002994 raw material Substances 0.000 description 12
- 230000004907 flux Effects 0.000 description 11
- 229910018540 Si C Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】チャンバーは、天板部と、底板部と、胴体部を備えており、胴体部は、中空筒形状の石英ガラス製であり、かつ天板部と底板部を連結しており、胴体部の外周に、開閉可能な反射部材が設けられており、かつ、反射部材は、周方向に分割されており、かつチャンバの内部から発せられる熱と光を反射する、単結晶製造装置。
【選択図】図1
Description
〈1〉坩堝と誘導加熱コイルが収容されたチャンバーを備える単結晶製造装置であって、前記チャンバーは、天板部と、底板部と、胴体部を備えており、前記胴体部は、中空筒形状の石英ガラス製であり、かつ前記天板部と前記底板部を連結しており、前記胴体部の外周に、開閉可能な反射部材が設けられており、かつ、前記反射部材は、周方向に分割されており、かつ前記チャンバの内部から発せられる熱と光を反射する、単結晶製造装置。
〈2〉前記反射部材は、外周から内周に向けて積層された複数の電磁鋼板である、〈1〉項に記載の装置。
2 誘導加熱コイル
3 チャンバ
4 天板部
5 底板部
6 胴体部
7 高周波電源
8 原料溶液
9 種結晶ホルダ
10 種結晶
11 回転軸
12、12a〜12t 反射部材
13 中空円筒状部材
14 磁束
15 渦電流
16 板状部材
17 内周
100 単結晶製造装置
Claims (2)
- 坩堝と誘導加熱コイルが収容されたチャンバを備える単結晶製造装置であって、
前記チャンバは、天板部と、底板部と、胴体部を備えており、
前記胴体部は、中空筒形状の石英ガラス製であり、かつ前記天板部と前記底板部を連結しており、
前記胴体部の外周に、開閉可能な反射部材が設けられており、かつ、
前記反射部材は、周方向に分割されており、かつ前記チャンバの内部から発せられる熱と光を反射する、単結晶製造装置。 - 前記反射部材は、外周から内周に向けて積層された複数の電磁鋼板である、請求項1に記載の装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015008728A JP6094605B2 (ja) | 2015-01-20 | 2015-01-20 | 単結晶製造装置 |
CN201610035873.5A CN105803516B (zh) | 2015-01-20 | 2016-01-20 | 单晶制造装置 |
US15/001,830 US9938636B2 (en) | 2015-01-20 | 2016-01-20 | Single crystal production apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015008728A JP6094605B2 (ja) | 2015-01-20 | 2015-01-20 | 単結晶製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016132596A true JP2016132596A (ja) | 2016-07-25 |
JP6094605B2 JP6094605B2 (ja) | 2017-03-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015008728A Active JP6094605B2 (ja) | 2015-01-20 | 2015-01-20 | 単結晶製造装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9938636B2 (ja) |
JP (1) | JP6094605B2 (ja) |
CN (1) | CN105803516B (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132118A (ja) * | 1983-01-18 | 1984-07-30 | Ushio Inc | 光照射装置 |
JPS61291485A (ja) * | 1985-06-14 | 1986-12-22 | Toshiba Corp | 単結晶育成装置 |
JPS6350391A (ja) * | 1986-08-18 | 1988-03-03 | Sony Corp | 単結晶成長装置 |
JPS63284810A (ja) * | 1987-04-24 | 1988-11-22 | エルピーイー・ソチエタ・ペル・アチオニ | エピタキシヤル反応炉 |
JPS6471117A (en) * | 1987-05-12 | 1989-03-16 | Jiemini Res Inc | Reflector for cvd reactor |
JP2013504513A (ja) * | 2009-09-15 | 2013-02-07 | トゥー‐シックス・インコーポレイテッド | SiC単結晶の昇華成長方法 |
JP2014069991A (ja) * | 2012-09-28 | 2014-04-21 | Denso Corp | 炭化珪素単結晶製造装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3311494A (en) * | 1964-12-07 | 1967-03-28 | Gen Electric | Processes of producing smooth adherent coatings of polytetrafluoroethylene |
US3983051A (en) * | 1973-12-06 | 1976-09-28 | Allied Chemical Corporation | Doped beryllium lanthanate crystals |
US4659601A (en) * | 1984-03-12 | 1987-04-21 | The Babcock & Wilcox Company | Adjustable multilayer thermal mirror insulation |
US4858557A (en) * | 1984-07-19 | 1989-08-22 | L.P.E. Spa | Epitaxial reactors |
JPH05319975A (ja) * | 1992-05-19 | 1993-12-03 | Meidensha Corp | 酸化物単結晶の製造方法 |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JP5854438B2 (ja) * | 2010-12-27 | 2016-02-09 | 新日鐵住金株式会社 | SiC単結晶の製造装置及びSiC単結晶の製造方法 |
US10094041B2 (en) * | 2011-07-04 | 2018-10-09 | Toyota Jidosha Kabushiki Kaisha | SiC single crystal and method of producing same |
CN103342362A (zh) * | 2013-07-12 | 2013-10-09 | 新特能源股份有限公司 | 一种多晶硅cvd反应器隔热罩 |
CN103469298A (zh) * | 2013-08-22 | 2013-12-25 | 昆山开威电子有限公司 | 一种泡生法生长掺铈钇铝石榴石单晶的方法及高温炉 |
CN103603029A (zh) * | 2013-11-28 | 2014-02-26 | 于洪洲 | 一种透明结构的晶体制备装置 |
-
2015
- 2015-01-20 JP JP2015008728A patent/JP6094605B2/ja active Active
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2016
- 2016-01-20 CN CN201610035873.5A patent/CN105803516B/zh not_active Expired - Fee Related
- 2016-01-20 US US15/001,830 patent/US9938636B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132118A (ja) * | 1983-01-18 | 1984-07-30 | Ushio Inc | 光照射装置 |
JPS61291485A (ja) * | 1985-06-14 | 1986-12-22 | Toshiba Corp | 単結晶育成装置 |
JPS6350391A (ja) * | 1986-08-18 | 1988-03-03 | Sony Corp | 単結晶成長装置 |
JPS63284810A (ja) * | 1987-04-24 | 1988-11-22 | エルピーイー・ソチエタ・ペル・アチオニ | エピタキシヤル反応炉 |
JPS6471117A (en) * | 1987-05-12 | 1989-03-16 | Jiemini Res Inc | Reflector for cvd reactor |
JP2013504513A (ja) * | 2009-09-15 | 2013-02-07 | トゥー‐シックス・インコーポレイテッド | SiC単結晶の昇華成長方法 |
JP2014069991A (ja) * | 2012-09-28 | 2014-04-21 | Denso Corp | 炭化珪素単結晶製造装置 |
Also Published As
Publication number | Publication date |
---|---|
CN105803516B (zh) | 2018-06-22 |
US9938636B2 (en) | 2018-04-10 |
US20160208407A1 (en) | 2016-07-21 |
JP6094605B2 (ja) | 2017-03-15 |
CN105803516A (zh) | 2016-07-27 |
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