JP2016118482A - 原子炉構造物の製造方法 - Google Patents
原子炉構造物の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000919 ceramic Substances 0.000 claims abstract description 105
- 239000011162 core material Substances 0.000 claims abstract description 73
- 239000000835 fiber Substances 0.000 claims abstract description 66
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 28
- 239000010439 graphite Substances 0.000 claims abstract description 28
- 239000002131 composite material Substances 0.000 claims abstract description 20
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 238000004804 winding Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000002759 woven fabric Substances 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 229910010271 silicon carbide Inorganic materials 0.000 description 21
- 239000000446 fuel Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 6
- 239000003758 nuclear fuel Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 239000004745 nonwoven fabric Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000004992 fission Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920003257 polycarbosilane Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- WZECUPJJEIXUKY-UHFFFAOYSA-N [O-2].[O-2].[O-2].[U+6] Chemical compound [O-2].[O-2].[O-2].[U+6] WZECUPJJEIXUKY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011226 reinforced ceramic Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229910000439 uranium oxide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C1/00—Reactor types
- G21C1/04—Thermal reactors ; Epithermal reactors
- G21C1/06—Heterogeneous reactors, i.e. in which fuel and moderator are separated
- G21C1/07—Pebble-bed reactors; Reactors with granular fuel
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C11/00—Shielding structurally associated with the reactor
- G21C11/06—Reflecting shields, i.e. for minimising loss of neutrons
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C21/00—Apparatus or processes specially adapted to the manufacture of reactors or parts thereof
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C5/00—Moderator or core structure; Selection of materials for use as moderator
- G21C5/12—Moderator or core structure; Selection of materials for use as moderator characterised by composition, e.g. the moderator containing additional substances which ensure improved heat resistance of the moderator
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C5/00—Moderator or core structure; Selection of materials for use as moderator
- G21C5/14—Moderator or core structure; Selection of materials for use as moderator characterised by shape
- G21C5/16—Shape of its constituent parts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Abstract
Description
(1)黒鉛からなる芯材を、略等脚台形を底面とする四角柱に加工する芯材加工工程と、前記芯材をセラミック繊維からなる骨材で覆い、基材を得る工程と、前記基材をCVD炉に投入し、前記骨材の隙間にSiCマトリックスを形成することにより、前記芯材の表面にセラミック/セラミック複合材を形成するCVD工程と、を備える。
(2)前記基材を得る工程は、前記芯材を前記骨材で覆った後に樹脂を含浸する工程を含む。
(3)前記基材を得る工程は、前記樹脂を含浸する工程の後に加熱する工程を含む。
(4)前記基材を得る工程は、前記芯材を前記骨材および樹脂で同時に覆う工程を含む。
(5)前記基材を得る工程は、前記芯材を前記骨材および前記樹脂で同時に覆う工程の後に加熱する工程を含む。
(6)前記樹脂は、有機珪素系樹脂または珪化物系セラミック粒子を含有する樹脂である。
(7)前記骨材は、前記芯材を巻回する前記セラミック繊維の巻回体である。
(8)前記骨材は、前記芯材を覆う前記セラミック繊維からなる布である。
(9)前記骨材は、前記芯材を覆う前記セラミック繊維からなる織布である。
(10)前記セラミック繊維はSiC繊維である。
・平板状の物体が積層し、平板状の物体に繊維状の物体が隙間なく充填されている。平板とは、例えば四角柱の繊維状の物体が横に並び平板状の物体を構成している状態、四角柱の繊維状の物体が平面内で巻回されている状態。
2:原子炉容器
3:炉心
4:ペブル
10:原子炉構造物
11:芯材
12:セラミック/セラミック複合材
13:骨材
20:ペブル収納空間
Claims (10)
- 黒鉛からなる芯材を、略等脚台形を底面とする四角柱に加工する芯材加工工程と、
前記芯材をセラミック繊維からなる骨材で覆い、基材を得る工程と、
前記基材をCVD炉に投入し、前記骨材の隙間にSiCマトリックスを形成することにより、前記芯材の表面にセラミック/セラミック複合材を形成するCVD工程と、
を備える原子炉構造物の製造方法。 - 請求項1に記載の原子炉構造物の製造方法であって、
前記基材を得る工程は、前記芯材を前記骨材で覆った後に樹脂を含浸する工程を含む、原子炉構造物の製造方法。 - 請求項2に記載の原子炉構造物の製造方法であって、
前記基材を得る工程は、前記樹脂を含浸する工程の後に加熱する工程を含む、原子炉構造物の製造方法。 - 請求項1に記載の原子炉構造物の製造方法であって、
前記基材を得る工程は、前記芯材を前記骨材および樹脂で同時に覆う工程を含む、原子炉構造物の製造方法。 - 請求項4に記載の原子炉構造物の製造方法であって、
前記基材を得る工程は、前記芯材を前記骨材および前記樹脂で同時に覆う工程の後に加熱する工程を含む、原子炉構造物の製造方法。 - 請求項2から5のいずれか1項に記載の原子炉構造物の製造方法であって、
前記樹脂は、有機珪素系樹脂または珪化物系セラミック粒子を含有する樹脂である、原子炉構造物の製造方法。 - 請求項1から6のいずれか1項に記載の原子炉構造物の製造方法であって、
前記骨材は、前記芯材を巻回する前記セラミック繊維の巻回体である、原子炉構造物の製造方法。 - 請求項1から7のいずれか1項に記載の原子炉構造物の製造方法であって、
前記骨材は、前記芯材を覆う前記セラミック繊維からなる布である、原子炉構造物の製造方法。 - 請求項8に記載の原子炉構造物の製造方法であって、
前記骨材は、前記芯材を覆う前記セラミック繊維からなる織布である、原子炉構造物の製造方法。 - 請求項1から9のいずれか1項に記載の原子炉構造物の製造方法であって、
前記セラミック繊維はSiC繊維である、原子炉構造物の製造方法。
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JP2014258777A JP6484024B2 (ja) | 2014-12-22 | 2014-12-22 | 原子炉構造物の製造方法 |
US15/538,375 US20170349496A1 (en) | 2014-12-22 | 2015-12-17 | Production method of nuclear reactor structure |
PCT/JP2015/085400 WO2016104337A1 (ja) | 2014-12-22 | 2015-12-17 | 原子炉構造物の製造方法 |
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JP6484024B2 JP6484024B2 (ja) | 2019-03-13 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60117178A (ja) * | 1983-11-30 | 1985-06-24 | 東芝セラミツクス株式会社 | 核熱高温ガス炉用黒鉛構造材料 |
JPS61197472A (ja) * | 1985-02-27 | 1986-09-01 | 工業技術院長 | 炭化ケイ素繊維強化炭化ケイ素複合体の製造方法 |
JPS61206897U (ja) * | 1985-06-17 | 1986-12-27 | ||
JPH08143364A (ja) * | 1994-11-15 | 1996-06-04 | Agency Of Ind Science & Technol | 繊維強化炭化ケイ素複合セラミックス成形体の製造方法 |
JPH11116337A (ja) * | 1997-10-14 | 1999-04-27 | Kakunenryo Cycle Kaihatsu Kiko | SiC複合材料スリーブおよびその製造方法 |
JPH11174186A (ja) * | 1997-12-11 | 1999-07-02 | Japan Nuclear Cycle Development Inst State Of Projects(Jnc) | 原子炉制御棒要素 |
JP2009210266A (ja) * | 2008-02-29 | 2009-09-17 | Ibiden Co Ltd | 管状体 |
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US2795607A (en) * | 1951-10-17 | 1957-06-11 | Basf Ag | Production of thioether dicarboxylic acids |
US3833470A (en) * | 1969-06-27 | 1974-09-03 | Kernforschungsanlage Juelich | Method of making fuel and fertile elements for nuclear-reactor cores |
JPS57158235A (en) * | 1981-03-26 | 1982-09-30 | Toray Ind Inc | Plastic molding |
FR2807563B1 (fr) * | 2000-04-07 | 2002-07-12 | Framatome Sa | Assemblage de combustible nucleaire pour un reacteur refroidi par de l'eau legere comportant un materiau combustible nucleaire sous forme de particules |
US6865245B2 (en) * | 2002-10-03 | 2005-03-08 | Massachusetts Institute Of Technology | Guide ring to control granular mixing in a pebble-bed nuclear reactor |
US7961835B2 (en) * | 2005-08-26 | 2011-06-14 | Keller Michael F | Hybrid integrated energy production process |
NL2000078C2 (nl) * | 2006-05-19 | 2007-11-20 | Gerrit Clemens Van Uitert | Kernreactor. |
KR100957052B1 (ko) * | 2008-03-17 | 2010-05-13 | 한국원자력연구원 | 노심배럴 주입연장덕트를 구비한 안전주입계통 |
US20130083878A1 (en) * | 2011-10-03 | 2013-04-04 | Mark Massie | Nuclear reactors and related methods and apparatus |
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JPS60117178A (ja) * | 1983-11-30 | 1985-06-24 | 東芝セラミツクス株式会社 | 核熱高温ガス炉用黒鉛構造材料 |
JPS61197472A (ja) * | 1985-02-27 | 1986-09-01 | 工業技術院長 | 炭化ケイ素繊維強化炭化ケイ素複合体の製造方法 |
JPS61206897U (ja) * | 1985-06-17 | 1986-12-27 | ||
JPH08143364A (ja) * | 1994-11-15 | 1996-06-04 | Agency Of Ind Science & Technol | 繊維強化炭化ケイ素複合セラミックス成形体の製造方法 |
JPH11116337A (ja) * | 1997-10-14 | 1999-04-27 | Kakunenryo Cycle Kaihatsu Kiko | SiC複合材料スリーブおよびその製造方法 |
JPH11174186A (ja) * | 1997-12-11 | 1999-07-02 | Japan Nuclear Cycle Development Inst State Of Projects(Jnc) | 原子炉制御棒要素 |
JP2009210266A (ja) * | 2008-02-29 | 2009-09-17 | Ibiden Co Ltd | 管状体 |
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JP6484024B2 (ja) | 2019-03-13 |
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