JP2016103496A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP2016103496A
JP2016103496A JP2014239439A JP2014239439A JP2016103496A JP 2016103496 A JP2016103496 A JP 2016103496A JP 2014239439 A JP2014239439 A JP 2014239439A JP 2014239439 A JP2014239439 A JP 2014239439A JP 2016103496 A JP2016103496 A JP 2016103496A
Authority
JP
Japan
Prior art keywords
plasma processing
lot
plasma
processing
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014239439A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016103496A5 (https=
Inventor
昭 鹿子嶋
Akira Kagoshima
昭 鹿子嶋
大輔 白石
Daisuke Shiraishi
大輔 白石
裕治 長谷
Yuji Hase
裕治 長谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2014239439A priority Critical patent/JP2016103496A/ja
Priority to KR1020150105988A priority patent/KR102044768B1/ko
Priority to TW104126395A priority patent/TW201619724A/zh
Priority to US14/834,389 priority patent/US10184182B2/en
Publication of JP2016103496A publication Critical patent/JP2016103496A/ja
Publication of JP2016103496A5 publication Critical patent/JP2016103496A5/ja
Priority to KR1020170078360A priority patent/KR102082199B1/ko
Priority to US16/207,434 priority patent/US11643727B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2014239439A 2014-11-27 2014-11-27 プラズマ処理装置 Pending JP2016103496A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014239439A JP2016103496A (ja) 2014-11-27 2014-11-27 プラズマ処理装置
KR1020150105988A KR102044768B1 (ko) 2014-11-27 2015-07-27 플라즈마 처리 장치
TW104126395A TW201619724A (zh) 2014-11-27 2015-08-13 電漿處理裝置
US14/834,389 US10184182B2 (en) 2014-11-27 2015-08-24 Plasma processing apparatus
KR1020170078360A KR102082199B1 (ko) 2014-11-27 2017-06-21 플라즈마 처리 장치
US16/207,434 US11643727B2 (en) 2014-11-27 2018-12-03 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014239439A JP2016103496A (ja) 2014-11-27 2014-11-27 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019007455A Division JP6623315B2 (ja) 2019-01-21 2019-01-21 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2016103496A true JP2016103496A (ja) 2016-06-02
JP2016103496A5 JP2016103496A5 (https=) 2016-12-08

Family

ID=56079611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014239439A Pending JP2016103496A (ja) 2014-11-27 2014-11-27 プラズマ処理装置

Country Status (4)

Country Link
US (2) US10184182B2 (https=)
JP (1) JP2016103496A (https=)
KR (2) KR102044768B1 (https=)
TW (1) TW201619724A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021156906A1 (ja) * 2020-02-03 2021-08-12 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7080065B2 (ja) * 2018-02-08 2022-06-03 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
KR102425936B1 (ko) * 2019-07-30 2022-07-28 주식회사 히타치하이테크 장치 진단 장치, 플라스마 처리 장치 및 장치 진단 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244065A (ja) * 2004-02-27 2005-09-08 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
JP2010219198A (ja) * 2009-03-16 2010-09-30 Hitachi High-Technologies Corp プラズマ処理装置
JP2012216639A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP2013141010A (ja) * 2013-03-11 2013-07-18 Hitachi High-Technologies Corp プラズマ処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP2005038976A (ja) * 2003-07-18 2005-02-10 Hitachi High-Technologies Corp 最適エッチングパラメタ自動設定システムおよびエッチング出来ばえ評価システム
JP5220447B2 (ja) * 2008-03-17 2013-06-26 東京エレクトロン株式会社 基板処理システムの洗浄方法、記憶媒体及び基板処理システム
JP5279627B2 (ja) 2009-06-18 2013-09-04 東京エレクトロン株式会社 基板処理方法及び記憶媒体
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5530794B2 (ja) * 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP5813389B2 (ja) * 2011-06-24 2015-11-17 東京エレクトロン株式会社 基板処理時間設定方法及び記憶媒体
JP5779482B2 (ja) * 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244065A (ja) * 2004-02-27 2005-09-08 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
JP2010219198A (ja) * 2009-03-16 2010-09-30 Hitachi High-Technologies Corp プラズマ処理装置
JP2012216639A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP2013141010A (ja) * 2013-03-11 2013-07-18 Hitachi High-Technologies Corp プラズマ処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021156906A1 (ja) * 2020-02-03 2021-08-12 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JPWO2021156906A1 (https=) * 2020-02-03 2021-08-12
JP7013618B2 (ja) 2020-02-03 2022-01-31 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12154765B2 (en) 2020-02-03 2024-11-26 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
US20160155611A1 (en) 2016-06-02
US11643727B2 (en) 2023-05-09
KR20170076631A (ko) 2017-07-04
KR20160063967A (ko) 2016-06-07
US10184182B2 (en) 2019-01-22
TWI561942B (https=) 2016-12-11
KR102044768B1 (ko) 2019-12-02
US20190100840A1 (en) 2019-04-04
KR102082199B1 (ko) 2020-02-27
TW201619724A (zh) 2016-06-01

Similar Documents

Publication Publication Date Title
JP5779482B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP5334787B2 (ja) プラズマ処理装置
CN109715848B (zh) 复杂多变量晶片处理设备中实现机器学习的方法和过程
KR101113203B1 (ko) 상태 추정 결과에 기초한 샘플링 레이트 조정
US11894220B2 (en) Method and apparatus for controlling a processing reactor
CN114008749B (zh) 用于补偿射频功率损耗的系统和方法
US11643727B2 (en) Plasma processing apparatus
KR20190038070A (ko) 반도체 장치의 제조 시스템 및 반도체 장치의 제조 방법
US6665623B1 (en) Method and apparatus for optimizing downstream uniformity
JP7670439B2 (ja) 温度補正情報算出装置、半導体製造装置、プログラム、温度補正情報算出方法
JP6623315B2 (ja) プラズマ処理装置
TWI810307B (zh) 基板處理裝置、電腦可讀儲存媒體及基板處理方法
JP2009064814A (ja) プラズマ処理装置
JP5596832B2 (ja) プラズマ処理方法のＲｕｎ−ｔｏ−Ｒｕｎ制御方法
JP7760045B2 (ja) チャンバ制御のオートチューニング及び処理パフォーマンス評価のための方法
CN118553589A (zh) 一种腔室清洁控制方法及半导体工艺设备
KR20250133338A (ko) 자동화된 레시피 건강 최적화
CN101432865A (zh) 具有原位监视和过程参数调谐的等离子体处理方法
KR20050069175A (ko) 반도체 장비의 공정 타겟을 제어하는 시스템에서 공정파라메타 변경방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161024

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170117

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170124

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170614

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170614

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170804

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180417

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180529

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20181030