JP2016063147A - 基板搬送方法 - Google Patents
基板搬送方法 Download PDFInfo
- Publication number
- JP2016063147A JP2016063147A JP2014191649A JP2014191649A JP2016063147A JP 2016063147 A JP2016063147 A JP 2016063147A JP 2014191649 A JP2014191649 A JP 2014191649A JP 2014191649 A JP2014191649 A JP 2014191649A JP 2016063147 A JP2016063147 A JP 2016063147A
- Authority
- JP
- Japan
- Prior art keywords
- pick
- heat treatment
- substrate
- wafer
- treatment chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 96
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 230000007723 transport mechanism Effects 0.000 claims description 13
- 239000000872 buffer Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 160
- 230000008569 process Effects 0.000 description 25
- 230000032258 transport Effects 0.000 description 14
- 230000006866 deterioration Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007853 buffer solution Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 210000003857 wrist joint Anatomy 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Abstract
Description
まず、本発明の一実施形態に係る処理システム1の構成の一例について、図1を参照しながら説明する。図1に示すように、本実施形態に係る処理システム1は、熱処理室PM1、PM2(以下、総称して熱処理室PMともいう。)を有する。
次に、かかる構成の処理システム1におけるウェハの搬送方法について図2、図3、図4A〜図4Cを参照しながら説明する。図2は、一実施形態に係る熱処理室PM1及び熱処理室PM2の搬送時間及び処理時間の一例を示す。図3は、一実施形態に係るウェハの搬送処理の一例を示すフローチャートを示す。図4A〜図4Cは、一実施形態に係るウェハの搬送動作の一例を説明する図である。図3に示すウェハの搬送処理は、主に制御部40により制御される。
2:共通搬送室
6:ゲートバルブ
8A,8B,8C:ロードロック室
10:搬入側搬送室
12:導入ポート
16:搬入側搬送機構
16A、16B:ピック(搬入側搬送室のピック)
18:共通搬送機構(搬送機構)
18A、18B:ピック(共通搬送機構のピック)
38:バッファ機構
40:制御部
a,b:サセプタ
PM1,PM2:熱処理室
Claims (5)
- 第1のピック及び第2のピックを有する搬送機構を用いて、熱処理室と該熱処理室と異なる他の処理室との間において前記基板を順次搬送する基板搬送方法であって、
未処理の基板を前記第1のピックに保持し、前記熱処理室まで搬送する第1の工程と、
前記熱処理室にて熱処理された処理済の基板を前記第2のピックに保持し、前記第1のピックが保持した未処理の基板を前記熱処理室に搬入する第2の工程と、
前記第2のピックに保持した前記処理済の基板を前記他の処理室まで搬送する第3の工程と、
前記他の処理室内の未処理の基板を前記第1のピックに保持し、前記第2のピックが保持した処理済の基板を前記他の処理室に搬入した後、前記第1のピック及び前記第2のピックのいずれも基板を保持していない状態にする第4の工程と、
を有する、基板搬送方法。 - 前記第4の工程の後、未処理の基板を前記第2のピックに保持し、未処理の基板及び処理済の基板を保持するピックを前記第1のピックと前記第2のピックとの間で切り替える第5の工程、
を有する請求項1に記載の基板搬送方法。 - 前記第4の工程は、
前記熱処理室において基板の熱処理が実行されている間に行われる、
請求項1又は2に記載の基板搬送方法。 - 前記熱処理室において複数の基板が同時に熱処理され、
前記第4の工程は、
前記同時に熱処理された複数の基板のうち前記第2のピックが最後に保持した前記処理済の基板を前記他の処理室に搬入した後、前記第1のピック及び前記第2のピックのいずれも基板を保持していない状態にする、
請求項1〜3のいずれか一項に記載の基板搬送方法。 - 前記第4の工程は、
前記第1のピックが保持した未処理の基板を一時的にバッファ機構に載置することで、前記第1のピック及び前記第2のピックのいずれも基板を保持していない状態にする、
請求項1〜4のいずれか一項に記載の基板搬送方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014191649A JP6338989B2 (ja) | 2014-09-19 | 2014-09-19 | 基板搬送方法 |
PCT/JP2015/075344 WO2016043083A1 (ja) | 2014-09-19 | 2015-09-07 | 基板搬送方法及び処理システム |
US15/512,244 US10128134B2 (en) | 2014-09-19 | 2015-09-07 | Substrate transfer method and processing system |
CN201580050468.4A CN106716617B (zh) | 2014-09-19 | 2015-09-07 | 基板搬送方法和处理系统 |
KR1020177010446A KR101944202B1 (ko) | 2014-09-19 | 2015-09-07 | 기판 반송 방법 및 처리 시스템 |
TW104130723A TWI678752B (zh) | 2014-09-19 | 2015-09-17 | 基板搬送方法及處理系統 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014191649A JP6338989B2 (ja) | 2014-09-19 | 2014-09-19 | 基板搬送方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016063147A true JP2016063147A (ja) | 2016-04-25 |
JP6338989B2 JP6338989B2 (ja) | 2018-06-06 |
Family
ID=55533122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014191649A Active JP6338989B2 (ja) | 2014-09-19 | 2014-09-19 | 基板搬送方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10128134B2 (ja) |
JP (1) | JP6338989B2 (ja) |
KR (1) | KR101944202B1 (ja) |
CN (1) | CN106716617B (ja) |
TW (1) | TWI678752B (ja) |
WO (1) | WO2016043083A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10998209B2 (en) * | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
US11574826B2 (en) * | 2019-07-12 | 2023-02-07 | Applied Materials, Inc. | High-density substrate processing systems and methods |
JP2022540607A (ja) | 2019-07-12 | 2022-09-16 | アプライド マテリアルズ インコーポレイテッド | 同時基板移送用ロボット |
US11117265B2 (en) | 2019-07-12 | 2021-09-14 | Applied Materials, Inc. | Robot for simultaneous substrate transfer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006190894A (ja) * | 2005-01-07 | 2006-07-20 | Tokyo Electron Ltd | クラスタツールの処理システム及びモジュール・サイクル時間監視プログラム |
JP2013161799A (ja) * | 2012-02-01 | 2013-08-19 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4348921B2 (ja) | 2002-09-25 | 2009-10-21 | 東京エレクトロン株式会社 | 被処理体の搬送方法 |
JP4841183B2 (ja) * | 2005-06-28 | 2011-12-21 | 東京エレクトロン株式会社 | 基板処理装置,搬送装置,搬送装置の制御方法 |
JP2007186757A (ja) * | 2006-01-13 | 2007-07-26 | Tokyo Electron Ltd | 真空処理装置及び真空処理方法 |
WO2011119503A2 (en) * | 2010-03-25 | 2011-09-29 | Applied Materials, Inc. | Segmented substrate loading for multiple substrate processing |
KR101390900B1 (ko) * | 2011-05-31 | 2014-04-30 | 세메스 주식회사 | 기판처리장치 |
KR20130009700A (ko) * | 2011-07-15 | 2013-01-23 | 도쿄엘렉트론가부시키가이샤 | 기판 반송 장치, 기판 처리 시스템, 기판 반송 방법, 및 기억 매체 |
JP2013161299A (ja) * | 2012-02-06 | 2013-08-19 | Toyota Motor Corp | 情報処理装置、インタフェースアクセス方法 |
JP6343536B2 (ja) * | 2014-09-25 | 2018-06-13 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
KR20160119380A (ko) * | 2015-04-03 | 2016-10-13 | 삼성전자주식회사 | 기판 제조 장치, 기판 제조 방법, 및 그를 포함하는 패브리케이션 라인 |
JP6089082B1 (ja) * | 2015-09-29 | 2017-03-01 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
JP2017123425A (ja) * | 2016-01-08 | 2017-07-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
-
2014
- 2014-09-19 JP JP2014191649A patent/JP6338989B2/ja active Active
-
2015
- 2015-09-07 KR KR1020177010446A patent/KR101944202B1/ko active IP Right Grant
- 2015-09-07 US US15/512,244 patent/US10128134B2/en active Active
- 2015-09-07 CN CN201580050468.4A patent/CN106716617B/zh active Active
- 2015-09-07 WO PCT/JP2015/075344 patent/WO2016043083A1/ja active Application Filing
- 2015-09-17 TW TW104130723A patent/TWI678752B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006190894A (ja) * | 2005-01-07 | 2006-07-20 | Tokyo Electron Ltd | クラスタツールの処理システム及びモジュール・サイクル時間監視プログラム |
JP2013161799A (ja) * | 2012-02-01 | 2013-08-19 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201624599A (zh) | 2016-07-01 |
US10128134B2 (en) | 2018-11-13 |
KR101944202B1 (ko) | 2019-01-30 |
TWI678752B (zh) | 2019-12-01 |
US20170287746A1 (en) | 2017-10-05 |
KR20170056683A (ko) | 2017-05-23 |
WO2016043083A1 (ja) | 2016-03-24 |
JP6338989B2 (ja) | 2018-06-06 |
CN106716617A (zh) | 2017-05-24 |
CN106716617B (zh) | 2020-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6338989B2 (ja) | 基板搬送方法 | |
TW201709392A (zh) | 基板處理裝置、基板裝載方法及基板卸下方法 | |
KR101227809B1 (ko) | 기판 배치대의 강온 방법, 컴퓨터 판독 가능한 기억 매체, 및 기판 처리 시스템 | |
US10569310B2 (en) | Method for cleaning substrate transfer mechanism and substrate processing system | |
JP7106681B2 (ja) | デュアルロードロックチャンバ | |
US20080223399A1 (en) | Substrate processing apparatus, substrate processing method and storage medium | |
JP2010245127A (ja) | 基板交換方法及び基板処理装置 | |
JP2018056341A (ja) | 姿勢変更装置 | |
JP2011061149A (ja) | 共通搬送装置及びこれを用いた処理システム | |
KR101817216B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP7137976B2 (ja) | 基板処理方法及び基板処理装置 | |
JP5981307B2 (ja) | 処理方法及び処理装置 | |
JP2011035103A (ja) | 搬送装置及び処理システム | |
JP7175151B2 (ja) | 搬送方法 | |
US10916464B1 (en) | Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency | |
TWI838381B (zh) | 基板處理方法及基板處理裝置 | |
WO2020203205A1 (ja) | 基板処理システム及び基板処理方法 | |
KR20240020964A (ko) | 기판처리방법 | |
KR20230090503A (ko) | 기판 처리 시스템 및 방법 | |
KR20230029449A (ko) | 기판 처리 시스템 | |
KR101492258B1 (ko) | 인라인 기판처리 시스템 | |
JP2011210757A (ja) | 処理システム及び搬送機構の冷却方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180130 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180417 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180509 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6338989 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |