JP2016040208A - アルミナ基板 - Google Patents
アルミナ基板 Download PDFInfo
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- JP2016040208A JP2016040208A JP2014164068A JP2014164068A JP2016040208A JP 2016040208 A JP2016040208 A JP 2016040208A JP 2014164068 A JP2014164068 A JP 2014164068A JP 2014164068 A JP2014164068 A JP 2014164068A JP 2016040208 A JP2016040208 A JP 2016040208A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02367—Substrates
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- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02491—Conductive materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- Chemical Kinetics & Catalysis (AREA)
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- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Abstract
Description
なお照射位置431を起点とした照射位置432の変位ベクトルと結像位置441を起点とした結像位置442の変位ベクトルが平行であれば凸、反平行であれば凹となっている。
c面サファイア基板を10mm角サイズに切断し、基板として用いた。濃度2wt%の希土類元素としてYを含有するMOD溶液を、3000rpmで20秒間スピンコートにより塗布した。塗布後、150℃のホットプレート上で10分間乾燥させた後、空気中にて600℃、2時間熱処理した。熱処理後、100mm角のアルミナ板13に載せ、更に基板の横1か所に5mgの粉末状カーボン11を配置した。略密閉状の匣鉢12として、直径30mm、高さ30mmの円筒状アルミナルツボを用いた。当該アルミナルツボを逆さにして基板および粉末状カーボンを覆うことにより、略密閉状態を実現した。図2に示す。窒化処理炉はカーボンをヒーターとする抵抗加熱型の電気炉を用いた。ガス置換のために、加熱前に回転ポンプと拡散ポンプを用いて0.03Paまで脱気し、次いで100kPa(大気圧)になるまで窒素ガスを流した後、窒素ガスのフローを停止した。ガス置換後、加熱し熱処理を行った。処理温度を1750℃、処理時間を4時間、昇降温速度を600℃/時間とした。室温まで冷却後、処理基板を取り出し評価した。
c面サファイアを10mm角に切り出し窒化処理用の基板を準備した。硝酸ユーロピウム水和物をエタノールに溶かし、濃度2wt%とした後、若干界面活性剤を加え、塗布溶液を作成した。スピンコートは3000rpmで20秒間行った。250℃のホットプレート上で10分間乾燥させた後、空気中にて1000℃、2時間熱処理した。窒化処理は実施例1と同様に行った。ただし処理温度は1650℃とした。
実施例1と同様の処理を施したアルミナ基板を準備し、再度実施例1と同様の処理を重ねた。ただしこの処理では粉末状のカーボンを配置せず、基板のみをアルミナルツボで覆い、窒化処理を行った。
実施例2で作成した基板を用い、再度実施例2と同様の処理を重ねた。ただし、この処理では粉末状のカーボン8mgを配置して窒化処理を行った。
実施例2で作成した基板を用い、再度実施例2と同様の処理を重ねた。このときの配置は図3と同様の配置とし、粉末状カーボンを8mg、Eu2O3粉を5mgとした。
11 カーボン
12 略密閉状の匣鉢
13 アルミナ板
14 希土類原料
20 試料設置台
22 カーボンヒーター
23 チャンバー
24 ガス排気口
25 ガス導入口
30 AlN層
31 層状の炭素含有相
32 領域状の炭素含有相
33 窒化されていないアルミナ基板
41 可視のLD、またはLED光源
42 スクリーン
431 本実施形態のアルミナ基板10のAlN層が形成されている側の任意の一点における光の照射位置
432 本実施形態のアルミナ基板10をスクリーン42と平行に移動した後の光の照射位置
441 光の照射位置431に対応してスクリーン上に結像した反射光の結像位置
442 光の照射位置432に対応してスクリーン上に結像した反射光の結像位置
Claims (6)
- 表面にAlN層が形成されたアルミナ基板であって、かつ炭素含有相を含むことを特徴とするアルミナ基板。
- 前記炭素含有相が(AlN)x(Al4C3)yで示される組成であることを特徴とする請求項1記載のアルミナ基板。ここでxおよびyは0を含まない正数。
- 前記炭素含有相がAl5C3Nで示される組成であることを特徴とする請求項1および請求項2記載のアルミナ基板。
- 前記AlN層の厚さが0.02μmから100μmであることを特徴とする請求項1〜請求項3記載のアルミナ基板。
- 前記アルミナ基板はサファイアであることを特徴とする請求項1〜請求項4記載のアルミナ基板。
- 前記AlN層の基板主面に対する面方位は、基板主面の面方位と一致していることを特徴とする請求項5記載のアルミナ基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014164068A JP6394170B2 (ja) | 2014-08-12 | 2014-08-12 | アルミナ基板 |
US15/329,304 US10337120B2 (en) | 2014-08-12 | 2015-08-06 | Alumina substrate |
PCT/JP2015/072316 WO2016024515A1 (ja) | 2014-08-12 | 2015-08-06 | アルミナ基板 |
CN201580042856.8A CN106661762B (zh) | 2014-08-12 | 2015-08-06 | 氧化铝基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014164068A JP6394170B2 (ja) | 2014-08-12 | 2014-08-12 | アルミナ基板 |
Publications (2)
Publication Number | Publication Date |
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JP2016040208A true JP2016040208A (ja) | 2016-03-24 |
JP6394170B2 JP6394170B2 (ja) | 2018-09-26 |
Family
ID=55304144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014164068A Expired - Fee Related JP6394170B2 (ja) | 2014-08-12 | 2014-08-12 | アルミナ基板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10337120B2 (ja) |
JP (1) | JP6394170B2 (ja) |
CN (1) | CN106661762B (ja) |
WO (1) | WO2016024515A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155762A (en) * | 1978-05-15 | 1979-12-08 | Ibm | Method of forming aluminum nitride layer |
JPH03193681A (ja) * | 1989-12-22 | 1991-08-23 | Hitachi Ltd | 表面改質方法およびその装置並びに表面改質基材 |
JPH0992881A (ja) * | 1995-09-21 | 1997-04-04 | Toshiba Corp | 化合物半導体装置 |
JP2003192494A (ja) * | 2001-12-27 | 2003-07-09 | Tokuyama Corp | 基板の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096860A (en) * | 1990-05-25 | 1992-03-17 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
US6744076B2 (en) * | 2002-03-14 | 2004-06-01 | The Circle For The Promotion Of Science And Engineering | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device |
JP4457576B2 (ja) | 2003-05-08 | 2010-04-28 | 住友電気工業株式会社 | Iii−v族化合物結晶およびその製造方法 |
JP4441415B2 (ja) | 2005-02-07 | 2010-03-31 | 国立大学法人東京工業大学 | 窒化アルミニウム単結晶積層基板 |
JP4907127B2 (ja) | 2005-08-26 | 2012-03-28 | 国立大学法人三重大学 | Iii族窒化物の自立単結晶作製方法およびiii族窒化物単結晶層を含む積層体 |
US8142861B2 (en) * | 2009-05-11 | 2012-03-27 | King Fahd University Of Petroleum & Minerals | Method of carbo-nitriding alumina surfaces |
-
2014
- 2014-08-12 JP JP2014164068A patent/JP6394170B2/ja not_active Expired - Fee Related
-
2015
- 2015-08-06 US US15/329,304 patent/US10337120B2/en not_active Expired - Fee Related
- 2015-08-06 CN CN201580042856.8A patent/CN106661762B/zh not_active Expired - Fee Related
- 2015-08-06 WO PCT/JP2015/072316 patent/WO2016024515A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155762A (en) * | 1978-05-15 | 1979-12-08 | Ibm | Method of forming aluminum nitride layer |
JPH03193681A (ja) * | 1989-12-22 | 1991-08-23 | Hitachi Ltd | 表面改質方法およびその装置並びに表面改質基材 |
JPH0992881A (ja) * | 1995-09-21 | 1997-04-04 | Toshiba Corp | 化合物半導体装置 |
JP2003192494A (ja) * | 2001-12-27 | 2003-07-09 | Tokuyama Corp | 基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106661762A (zh) | 2017-05-10 |
US10337120B2 (en) | 2019-07-02 |
WO2016024515A1 (ja) | 2016-02-18 |
JP6394170B2 (ja) | 2018-09-26 |
CN106661762B (zh) | 2018-12-18 |
US20170218535A1 (en) | 2017-08-03 |
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