JP2016012738A5 - - Google Patents
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- Publication number
- JP2016012738A5 JP2016012738A5 JP2015199639A JP2015199639A JP2016012738A5 JP 2016012738 A5 JP2016012738 A5 JP 2016012738A5 JP 2015199639 A JP2015199639 A JP 2015199639A JP 2015199639 A JP2015199639 A JP 2015199639A JP 2016012738 A5 JP2016012738 A5 JP 2016012738A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- layer
- element according
- gas
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 17
- 239000007789 gas Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 230000000694 effects Effects 0.000 claims 5
- 238000010884 ion-beam technique Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 238000005121 nitriding Methods 0.000 claims 5
- 230000001590 oxidative effect Effects 0.000 claims 5
- 150000004767 nitrides Chemical class 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015199639A JP6078610B2 (ja) | 2013-09-25 | 2015-10-07 | 磁気抵抗効果素子の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013197982 | 2013-09-25 | ||
| JP2013197982 | 2013-09-25 | ||
| JP2015199639A JP6078610B2 (ja) | 2013-09-25 | 2015-10-07 | 磁気抵抗効果素子の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015531192A Division JP5824189B2 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016012738A JP2016012738A (ja) | 2016-01-21 |
| JP2016012738A5 true JP2016012738A5 (cg-RX-API-DMAC7.html) | 2016-03-03 |
| JP6078610B2 JP6078610B2 (ja) | 2017-02-08 |
Family
ID=52742389
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015531192A Active JP5824189B2 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造システム |
| JP2015199639A Active JP6078610B2 (ja) | 2013-09-25 | 2015-10-07 | 磁気抵抗効果素子の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015531192A Active JP5824189B2 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造システム |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20160204342A1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP5824189B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101862632B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI557959B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2015045205A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5824189B2 (ja) | 2013-09-25 | 2015-11-25 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造システム |
| US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
| JP2018147916A (ja) * | 2017-03-01 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法 |
| US10522749B2 (en) | 2017-05-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage |
| US10043851B1 (en) * | 2017-08-03 | 2018-08-07 | Headway Technologies, Inc. | Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching |
| WO2019046064A1 (en) | 2017-08-29 | 2019-03-07 | Everspin Technologies, Inc. | MAGNETORESISTIVE CELL ETCHING METHOD |
| WO2019077661A1 (ja) * | 2017-10-16 | 2019-04-25 | Tdk株式会社 | トンネル磁気抵抗効果素子、磁気メモリ、内蔵型メモリ、及びトンネル磁気抵抗効果素子を作製する方法 |
| US11195703B2 (en) | 2018-12-07 | 2021-12-07 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
| US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
| CN113383435A (zh) * | 2019-02-01 | 2021-09-10 | 朗姆研究公司 | 利用气体处理及脉冲化的离子束蚀刻 |
| WO2020176640A1 (en) | 2019-02-28 | 2020-09-03 | Lam Research Corporation | Ion beam etching with sidewall cleaning |
| US20210234091A1 (en) * | 2020-01-24 | 2021-07-29 | Applied Materials, Inc. | Magnetic memory and method of fabrication |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04254328A (ja) * | 1991-02-06 | 1992-09-09 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3603062B2 (ja) * | 2000-09-06 | 2004-12-15 | 松下電器産業株式会社 | 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス |
| JP3558996B2 (ja) * | 2001-03-30 | 2004-08-25 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置 |
| JP3939519B2 (ja) * | 2001-09-14 | 2007-07-04 | アルプス電気株式会社 | 磁気検出素子及びその製造方法 |
| US20030091739A1 (en) | 2001-11-14 | 2003-05-15 | Hitoshi Sakamoto | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
| US7659209B2 (en) | 2001-11-14 | 2010-02-09 | Canon Anelva Corporation | Barrier metal film production method |
| FR2884916B1 (fr) * | 2005-04-25 | 2007-06-22 | Commissariat Energie Atomique | Detecteur optique ultrasensible a grande resolution temporelle, utilisant un plasmon de surface |
| US8540852B2 (en) | 2005-09-13 | 2013-09-24 | Canon Anelva Corporation | Method and apparatus for manufacturing magnetoresistive devices |
| JP2008052840A (ja) * | 2006-08-25 | 2008-03-06 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッドスライダの製造方法 |
| US8119018B2 (en) * | 2006-09-13 | 2012-02-21 | Canon Anelva Corporation | Magnetoresistive effect element manufacturing method and multi-chamber apparatus for manufacturing magnetoresistive effect element |
| US8472149B2 (en) * | 2007-10-01 | 2013-06-25 | Tdk Corporation | CPP type magneto-resistive effect device and magnetic disk system |
| US7863582B2 (en) * | 2008-01-25 | 2011-01-04 | Valery Godyak | Ion-beam source |
| US8871645B2 (en) | 2008-09-11 | 2014-10-28 | Applied Materials, Inc. | Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof |
| JP5117421B2 (ja) * | 2009-02-12 | 2013-01-16 | 株式会社東芝 | 磁気抵抗効果素子及びその製造方法 |
| US20110061812A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20110065276A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| JP5601181B2 (ja) * | 2010-12-02 | 2014-10-08 | 富士通セミコンダクター株式会社 | 磁気抵抗効果素子及びその製造方法 |
| KR101574155B1 (ko) | 2011-06-24 | 2015-12-03 | 캐논 아네르바 가부시키가이샤 | 자기 저항 효과 소자의 제조 방법 |
| WO2013027406A1 (ja) * | 2011-08-25 | 2013-02-28 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法及び磁気抵抗効果膜の加工方法 |
| JP2013247198A (ja) * | 2012-05-24 | 2013-12-09 | Toshiba Corp | 磁気抵抗素子及びその製造方法 |
| JP5824189B2 (ja) | 2013-09-25 | 2015-11-25 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造システム |
-
2014
- 2014-04-18 JP JP2015531192A patent/JP5824189B2/ja active Active
- 2014-04-18 WO PCT/JP2014/002210 patent/WO2015045205A1/ja not_active Ceased
- 2014-04-18 KR KR1020167008946A patent/KR101862632B1/ko active Active
- 2014-08-29 TW TW103129887A patent/TWI557959B/zh active
-
2015
- 2015-10-07 JP JP2015199639A patent/JP6078610B2/ja active Active
-
2016
- 2016-03-21 US US15/075,409 patent/US20160204342A1/en not_active Abandoned
-
2017
- 2017-05-15 US US15/595,103 patent/US10157961B2/en active Active