JP2015535038A - 平らな被処理材料の処理のための装置と方法 - Google Patents
平らな被処理材料の処理のための装置と方法 Download PDFInfo
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Abstract
Description
− 処理液を所定の浴レベルまで蓄積可能な少なくとも1つの処理室;
− 処理液を前記少なくとも1つの処理室に供給するための少なくとも1つの供給装置;
− 前記被処理材料が前記少なくとも1つの処理室を通って前記浴レベルより低い搬送面にて水平位置で搬送されることが可能な少なくとも1つの搬送装置;
− 処理液を受けるための少なくとも1つの受け範囲;及び
− 処理液を前記少なくとも1つの処理室から夫々の排出率で前記少なくとも1つの受け範囲に輸送するための処理液用排出開口を夫々少なくとも1つ備え、並びに夫々少なくとも1つの制御系を備えた少なくとも1つの排出装置。
− 少なくとも1つの供給装置によって処理液を処理室へ供給するステップ;
− 排出装置の夫々少なくとも1つの排出開口を通して処理室から少なくとも1つの受け範囲へ処理液を夫々の排出率で排出するステップ;
− 少なくとも1つの搬送装置により処理室を通って搬送面にて水平位置にて被処理材料を、処理室における処理液の浴レベルより下で搬送するステップ:及び
− 処理室からの処理液の夫々の排出率を制御系によって調整するステップ。
図面において、同じ参照符号は同じ機能を備えた要素、及び/又は同じ要素を意味し、表す。
4 受け範囲/貯蔵容器
7 供給装置、ペンストック
9 ノズル
20 処理室
21 側壁
22 底壁
30 搬送装置
31,31’ 搬送手段(ホイール、ローラ)
35 陽極
36 接触クランプ
40 排出装置
41 排出開口
43 制御系
44 制御要素、翼板、フラップ
45 駆動装置
46 排出ライン
47 排出ダクト
48 翼板における開口
49 駆動装置のためのハウジング
60 スクリーン装置
61 排出室
62 通路開口
63 ドレンプレート
64 ガイド要素、折れ縁
65 流出室の下壁
70 貯蔵容器、装置ハウジング
80 レバーロッド組立品、調整軸
B 被処理材料
b’ 被処理材料片
E 搬送面
F 処理液
M 処理室における浴レベル
N 液レベル
T 搬送方向
Claims (17)
- 平らな被処理材料(B)を処理液(F)で化学的処理又は電解処理するための装置(1)であって、
− 処理液(F)を浴レベル(M)まで蓄積可能な少なくとも1つの処理室(20)と、
− 処理液(F)を前記少なくとも1つの処理室(20)に供給するための少なくとも1つの供給装置(7)と、
− 前記平らな被処理材料(B)が前記少なくとも1つの処理室(20)を通って前記浴レベル(M)より低い搬送面(E)にて水平位置で搬送されることが可能な少なくとも1つの搬送装置(30)と、
− 処理液(F)を受けるための少なくとも1つの受け範囲(4)と、
− 処理液(F)を前記少なくとも1つの処理室(20)から夫々の排出率で前記少なくとも1つの受け範囲(4)に輸送するための処理液(F)用排出開口(41)を夫々少なくとも1つ備えた少なくとも1つの排出装置(40)と
を有し、前記少なくとも1つの排出装置(40)が夫々、少なくとも1つの制御系(43)を有し、この制御系で前記少なくとも1つの排出開口(41)を通る処理液(F)の排出率が調整可能である、化学的処理又は電解処理のための装置(1)。 - 浴レベル(M)が前記制御系(43)によって調整可能である、請求項1に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの排出装置(4)が夫々、少なくとも1つの排出ダクト(47)を有することを特徴とする、請求項1又は2に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの制御系(43)が前記少なくとも1つの排出ダクト(47)上に、及び/又は該ダクト内に配置されていることを特徴とする、請求項3に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの制御系(43)が、ポンプと前記少なくとも1つの排出ダクト(47)の横断面を変更する要素とを有する群から選択された少なくとも1つの制御要素(44)を有することを特徴とする、請求項3又は4に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの排出ダクト(47)の横断面を変更する前記少なくとも1つの要素(44)が、弁、フラップ及び翼板を有する群から選択されることを特徴とする、請求項5に記載の化学的処理又は電解処理のための装置(1)。
- 少なくとも2つの排出ダクト(47)が設けられ、前記排出率が前記少なくとも2つの排出ダクト(47)を介して前記少なくとも1つの制御系(43)を用いて一緒に調整可能であることを特徴とする、請求項3〜6のいずれか一項に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの排出ダクト(47)が前記少なくとも1つの受け範囲における液レベル(N)の下で終端することを特徴とする、請求項3〜7のいずれか一項に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの排出ダクト(47)が少なくとも1つの排出ライン(46)を有し、このラインの夫々が夫々の排出ダクト(47)を画定することを特徴とする、請求項3〜8のいずれか一項に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つの制御系(43)が夫々駆動装置(45)を有し、この駆動装置が前記少なくとも1つの制御要素(44)から空間的に離れて配置されていることを特徴とする、請求項1〜9のいずれか一項に記載の化学的処理又は電解処理のための装置(1)。
- 少なくとも1つのスクリーン装置(60)が夫々、前記少なくとも1つの処理室(20)と前記少なくとも1つの排出装置(40)の間に配置されていることを特徴とする、請求項1〜10のいずれか一項に記載の化学的処理又は電解処理のための装置(1)。
- 夫々排出室(61)が前記少なくとも1つのスクリーン装置(60)と前記少なくとも1つの排出開口(41)の間に形成されることを特徴とする、請求項11に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つのスクリーン装置(60)が夫々、被処理材料(B)のための搬送面(B)の高さレベルに配置された前記少なくとも1つの排出室(61)への処理液(F)の通過のための少なくとも1つの通路開口(62)を有することを特徴とする、請求項11又は12に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つのスクリーン装置(6)が夫々、少なくとも部分的に処理室(20)の底を形成し、前記排出室(61)の下壁に本質的に平行に延在し、該排出室から離れていることで前記排出室(61)の下壁と通路開口(62)を形成するスクリーン装置(60)との間に通路間隔が形成されることを特徴とする、請求項11又は12に記載の化学的処理又は電解処理のための装置(1)。
- 前記少なくとも1つのスクリーン装置(60)が夫々ドレンプレート(63)によって形成され、前記少なくとも1つのドレンプレート(63)が夫々排出室(61)の下壁の方に向いた少なくとも1つのガイド要素(64)を備えて形成されることで、通路間隔の減少が前記排出室(61)の下壁と前記少なくとも1つのガイド要素(64)の間に生じて、通路開口(62)を形成することを特徴とする、請求項14に記載の化学的処理又は電解処理のための装置(1)。
- 前記通路間隔が、排出開口(41)に隣接する前記少なくとも1つのガイド要素(64)の位置で、前記排出開口(41)から更に離れた前記少なくとも1つのガイド要素(64)の別の位置よりも小さいことを特徴とする、請求項15に記載の化学的処理又は電解処理のための装置(1)。
- 処理室(20)内の被処理材料(B)を処理液(F)で化学的処理又は電解処理する方法であって、
− 処理液(F)を少なくとも1つの供給装置(7)を介して処理室(20)に供給するステップと、
− 処理液(F)を夫々の排出率で、排出装置(40)の夫々少なくとも1つの排出開口(41)を通して処理室(20)から少なくとも1つの受け範囲(4)に排出するステップと、
− 少なくとも1つの搬送装置(30)を用いて被処理材料(B)を処理室(20)を通して搬送面(B)における水平位置で搬送するステップであって、被処理材料(B)が処理室(20)内の処理液(F)の浴レベル(M)より下で搬送される搬送ステップと、
− 勝利室(20)からの処理液(F)の夫々の排出率を制御系(43)を用いて調整するステップと、
を有する、特に請求項1〜16のいずれか一項に記載の化学的処理又は電解処理のための装置(1)を用いて化学的処理又は電解処理する方法。
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