JP2015533263A5 - - Google Patents
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- Publication number
- JP2015533263A5 JP2015533263A5 JP2015535841A JP2015535841A JP2015533263A5 JP 2015533263 A5 JP2015533263 A5 JP 2015533263A5 JP 2015535841 A JP2015535841 A JP 2015535841A JP 2015535841 A JP2015535841 A JP 2015535841A JP 2015533263 A5 JP2015533263 A5 JP 2015533263A5
- Authority
- JP
- Japan
- Prior art keywords
- directing
- instructions
- ion beam
- focused ion
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000010884 ion-beam technique Methods 0.000 claims 4
Claims (2)
- 前記3次元集積回路構造体に向かって前記集束イオン・ビームを導く前記命令が、前記水平導電層に対して垂直でない角度で前記集束イオン・ビームを導くコンピュータ命令を含む、請求項16に記載のシステム。
- 前記3次元集積回路構造体に向かって前記集束イオン・ビームを導く前記命令が、加工物表面に対して垂直に前記集束イオン・ビームを導くことを含み、ミリングされた表面に対する垂線が垂直成分を有するように、前記加工物を傾けるコンピュータ命令をさらに含む、請求項16または17に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261710668P | 2012-10-05 | 2012-10-05 | |
US61/710,668 | 2012-10-05 | ||
PCT/US2013/063556 WO2014055935A1 (en) | 2012-10-05 | 2013-10-04 | Multidimensional structural access |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015533263A JP2015533263A (ja) | 2015-11-19 |
JP2015533263A5 true JP2015533263A5 (ja) | 2016-12-08 |
JP6429780B2 JP6429780B2 (ja) | 2018-11-28 |
Family
ID=50435492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015535841A Expired - Fee Related JP6429780B2 (ja) | 2012-10-05 | 2013-10-04 | 多次元構造体アクセス |
Country Status (7)
Country | Link |
---|---|
US (1) | US9696372B2 (ja) |
EP (1) | EP2904633B1 (ja) |
JP (1) | JP6429780B2 (ja) |
KR (1) | KR102041272B1 (ja) |
CN (1) | CN104813459B (ja) |
TW (1) | TWI618935B (ja) |
WO (1) | WO2014055935A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10199283B1 (en) | 2015-02-03 | 2019-02-05 | Pdf Solutions, Inc. | Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage |
US9799575B2 (en) | 2015-12-16 | 2017-10-24 | Pdf Solutions, Inc. | Integrated circuit containing DOEs of NCEM-enabled fill cells |
US10978438B1 (en) | 2015-12-16 | 2021-04-13 | Pdf Solutions, Inc. | IC with test structures and E-beam pads embedded within a contiguous standard cell area |
US10593604B1 (en) | 2015-12-16 | 2020-03-17 | Pdf Solutions, Inc. | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells |
US9653446B1 (en) | 2016-04-04 | 2017-05-16 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cells |
US9929063B1 (en) | 2016-04-04 | 2018-03-27 | Pdf Solutions, Inc. | Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates |
US9905553B1 (en) | 2016-04-04 | 2018-02-27 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells |
US9748153B1 (en) | 2017-03-29 | 2017-08-29 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure |
US9773774B1 (en) | 2017-03-30 | 2017-09-26 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells |
US9786649B1 (en) | 2017-06-27 | 2017-10-10 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells |
US9768083B1 (en) | 2017-06-27 | 2017-09-19 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells |
US10096530B1 (en) | 2017-06-28 | 2018-10-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells |
US9865583B1 (en) | 2017-06-28 | 2018-01-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells |
CN108493189B (zh) * | 2018-03-22 | 2019-03-01 | 长江存储科技有限责任公司 | 3d nand检测结构及其形成方法 |
WO2020244795A1 (en) * | 2019-06-07 | 2020-12-10 | Carl Zeiss Smt Gmbh | Cross section imaging with improved 3d volume image reconstruction accuracy |
CN113314542B (zh) * | 2021-04-27 | 2022-01-25 | 长江存储科技有限责任公司 | 一种样品制备方法 |
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IL145699A (en) | 2001-09-30 | 2006-12-10 | Nova Measuring Instr Ltd | Method of thin film characterization |
JP2003114252A (ja) | 2001-10-02 | 2003-04-18 | Hitachi Maxell Ltd | 半導体検査装置 |
JP2004226079A (ja) * | 2003-01-20 | 2004-08-12 | Seiko Instruments Inc | 表面あるいは断面加工観察方法及びその装置 |
US6884641B2 (en) * | 2003-09-18 | 2005-04-26 | International Business Machines Corporation | Site-specific methodology for localization and analyzing junction defects in mosfet devices |
WO2006050495A2 (en) * | 2004-11-03 | 2006-05-11 | Omniprobe, Inc. | Method and apparatus for the automated process of in-situ lift-out |
US20060186874A1 (en) * | 2004-12-02 | 2006-08-24 | The Board Of Trustees Of The University Of Illinois | System and method for mechanical testing of freestanding microscale to nanoscale thin films |
US7253105B2 (en) * | 2005-02-22 | 2007-08-07 | International Business Machines Corporation | Reliable BEOL integration process with direct CMP of porous SiCOH dielectric |
JP4927345B2 (ja) * | 2005-04-07 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 試料体の加工観察装置及び試料体の観察方法 |
US20060292705A1 (en) | 2005-06-24 | 2006-12-28 | Veeco Instruments Inc. | Method and process for fabricating read sensors for read-write heads in mass storage devices |
US7423263B2 (en) | 2006-06-23 | 2008-09-09 | Fei Company | Planar view sample preparation |
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EP1956634A1 (en) * | 2007-02-06 | 2008-08-13 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Method and apparatus for in-situ sample preparation |
JP4974737B2 (ja) | 2007-04-05 | 2012-07-11 | 株式会社日立ハイテクノロジーズ | 荷電粒子システム |
JP5805536B2 (ja) * | 2008-10-12 | 2015-11-04 | エフ・イ−・アイ・カンパニー | 局所領域ナビゲーション用の高精度ビーム配置 |
US8536526B2 (en) * | 2008-12-29 | 2013-09-17 | International Business Machines Corporation | Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit |
US8093074B2 (en) * | 2009-12-18 | 2012-01-10 | United Microelectronics Corp. | Analysis method for semiconductor device |
JP5480110B2 (ja) | 2010-11-22 | 2014-04-23 | 株式会社日立ハイテクノロジーズ | イオンミリング装置及びイオンミリング加工方法 |
KR101919422B1 (ko) | 2012-09-28 | 2019-02-08 | 삼성전자주식회사 | 질화물 반도체 기반의 파워 변환 장치 |
TWI628702B (zh) | 2012-10-05 | 2018-07-01 | Fei公司 | 高「高寬比」結構之分析 |
CN104377101B (zh) | 2013-08-14 | 2017-08-08 | Fei 公司 | 用于带电粒子束系统的电路探头 |
-
2013
- 2013-10-04 CN CN201380063643.4A patent/CN104813459B/zh not_active Expired - Fee Related
- 2013-10-04 WO PCT/US2013/063556 patent/WO2014055935A1/en active Application Filing
- 2013-10-04 KR KR1020157008674A patent/KR102041272B1/ko active IP Right Grant
- 2013-10-04 EP EP13843585.4A patent/EP2904633B1/en not_active Not-in-force
- 2013-10-04 US US14/432,712 patent/US9696372B2/en active Active
- 2013-10-04 JP JP2015535841A patent/JP6429780B2/ja not_active Expired - Fee Related
- 2013-10-07 TW TW102136257A patent/TWI618935B/zh not_active IP Right Cessation
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