RU2016143113A - Способ планиризации поверхности наноструктур материалов электронной техники пучком газовых кластерных ионов - Google Patents
Способ планиризации поверхности наноструктур материалов электронной техники пучком газовых кластерных ионов Download PDFInfo
- Publication number
- RU2016143113A RU2016143113A RU2016143113A RU2016143113A RU2016143113A RU 2016143113 A RU2016143113 A RU 2016143113A RU 2016143113 A RU2016143113 A RU 2016143113A RU 2016143113 A RU2016143113 A RU 2016143113A RU 2016143113 A RU2016143113 A RU 2016143113A
- Authority
- RU
- Russia
- Prior art keywords
- nanostructures
- planizing
- materials
- gas cluster
- electronic equipment
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 title claims 2
- 238000000034 method Methods 0.000 title claims 2
- 239000002086 nanomaterial Substances 0.000 title claims 2
- 239000000463 material Substances 0.000 title 1
- 239000012776 electronic material Substances 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Claims (1)
- Способ планиризации поверхности наноструктур материалов электронной техники пучком газовых кластерных ионов, отличающийся тем, что в качестве рабочего газа пучка газовых кластерных ионов используют ксенон.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016143113A RU2695028C2 (ru) | 2016-11-02 | 2016-11-02 | Способ планаризации поверхности наноструктур материалов электронной техники пучком газовых кластерных ионов |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016143113A RU2695028C2 (ru) | 2016-11-02 | 2016-11-02 | Способ планаризации поверхности наноструктур материалов электронной техники пучком газовых кластерных ионов |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| RU2016143113A true RU2016143113A (ru) | 2018-05-03 |
| RU2016143113A3 RU2016143113A3 (ru) | 2019-03-28 |
| RU2695028C2 RU2695028C2 (ru) | 2019-07-18 |
Family
ID=62105912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2016143113A RU2695028C2 (ru) | 2016-11-02 | 2016-11-02 | Способ планаризации поверхности наноструктур материалов электронной техники пучком газовых кластерных ионов |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2695028C2 (ru) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7794798B2 (en) * | 2007-09-29 | 2010-09-14 | Tel Epion Inc. | Method for depositing films using gas cluster ion beam processing |
| US8193094B2 (en) * | 2010-06-21 | 2012-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post CMP planarization by cluster ION beam etch |
-
2016
- 2016-11-02 RU RU2016143113A patent/RU2695028C2/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| RU2695028C2 (ru) | 2019-07-18 |
| RU2016143113A3 (ru) | 2019-03-28 |
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