JP2015533263A - 多次元構造体アクセス - Google Patents
多次元構造体アクセス Download PDFInfo
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- H—ELECTRICITY
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/306—Contactless testing using electron beams of printed or hybrid circuits
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2806—Apparatus therefor, e.g. test stations, drivers, analysers, conveyors
- G01R31/2808—Holding, conveying or contacting devices, e.g. test adapters, edge connectors, extender boards
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2898—Sample preparation, e.g. removing encapsulation, etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/312—Contactless testing by capacitive methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (18)
- 複数の導電材料層を有する3次元集積回路構造体内の関心領域を分析する方法であって、
複数の水平導電層を露出させるために、前記導電材料層に対して垂直でない角度で前記3次元集積回路構造体に向かって集束イオン・ビームを導くこと、
露出させたどの水平導体が関心の構成要素の垂直位置に対応するのかを決定すること、
露出させた前記水平導体に上方から接触させるために、1つまたは複数の電気プローブを移動させること、
前記電気プローブに電圧を印加すること、および
前記関心領域を分析するために、印加した前記電圧の効果を観察すること
を含む方法。 - 前記3次元集積回路構造体に向かって集束イオン・ビームを導くことが、前記関心領域への電気的アクセスを提供するために複数の水平導電層を露出しながら、前記関心領域を無傷のまま残すように前記集束イオン・ビームを導くことを含む、請求項1に記載の方法。
- 露出させた前記水平導体に接触させるために、1つまたは複数の電気プローブを移動させることが、前記プローブを、露出させた前記水平導体の上に配置するために、前記1つまたは複数の電気プローブを移動させること、および、次いで、露出させた前記水平導体に接触させるために、垂直成分を有する方向に前記プローブを移動させることを含む、請求項1または2に記載の方法。
- 前記導電材料表面層に対して垂直でない角度で集束イオン・ビームを導くことが、前記表面に対する垂線から約30°から約45°の間の角度で前記集束イオン・ビームを導くことを含む、請求項1から3のいずれか一項に記載の方法。
- 印加した前記電圧の効果を観察することが、電圧コントラスト画像化を使用すること、電気信号を感知すること、または原子間力顕微鏡プローブを使用することにより、前記関心領域を分析することを含む、請求項1から4のいずれか一項に記載の方法。
- 電気信号を感知することが、1つまたは複数の電気プローブを使用して電圧または電流を感知することを含む、請求項5に記載の方法。
- 前記3次元構造体がデータ記憶回路を含む、請求項1から6のいずれか一項に記載の方法。
- 前記3次元構造体が、論理回路、および/またはNAND、SRAM、DRAMもしくはメモリ・セルを含む、請求項1から7のいずれか一項に記載の方法。
- 3次元集積回路構造体内の関心領域を分析する方法であって、
複数の水平導電層を露出させるよう表面をミリングするために、前記3次元集積回路構造体に向かって集束イオン・ビームを導くこと、
露出させたどの水平導電層が関心領域の垂直位置に対応するのかを決定すること、
関心領域に対応する、決定された前記水平導電層内の導体に接触させるため、電気プローブを下ろすこと、
前記電気プローブに電圧を印加すること、および
前記関心領域を分析するために、印加した前記電圧の効果を観察すること
を含む方法。 - 複数の水平導電層を露出させるよう表面をミリングするために、前記3次元集積回路構造体に向かって集束イオン・ビームを導くことが、加工物表面に対して垂直に前記集束イオン・ビームを導くことを含み、ミリングされた表面に対する垂線が垂直成分を有するように、前記加工物を傾けることをさらに含む、請求項9に記載の方法。
- 前記加工物を傾けることが、約30°から約45°の間の角度に前記加工物を傾けることを含む、請求項10に記載の方法。
- 複数の水平導電層を露出させるように表面をミリングするために、前記3次元集積回路構造体に向かって集束イオン・ビームを導くことが、前記水平導電層に対して垂直でない角度で前記集束イオン・ビームを導くことを含む、請求項9に記載の方法。
- 前記水平導電層に対して垂直でない角度で前記集束イオン・ビームを導くことが、前記水平導電層に対して約30°から約45°の間の角度で前記集束イオン・ビームを導くことを含む、請求項12に記載の方法。
- 前記関心領域を分析するために、印加した前記電圧の効果を観察することが、電圧コントラスト画像化を使用すること、電気信号を感知すること、または原子間力顕微鏡プローブを使用することを含む、請求項9から13のいずれか一項に記載の方法。
- 電気信号を感知することが、1つまたは複数の電気プローブを使用して電圧または電流を感知することを含む、請求項14に記載の方法。
- 3次元集積回路内の関心領域を分析するシステムであって、
集束イオン・ビームを供給するイオン光学カラムと、
集束電子ビームを供給する電子光学カラムと、
試料から放出された2次粒子を検出する粒子検出器と、
3次元で移動可能な電気プローブであり、前記集積回路と接触し、前記関心領域に対する電気接触を提供する電気プローブと、
コンピュータ・メモリと通信するコントローラと
を備え、前記コンピュータ・メモリが、
複数の水平導電層を露出させるように表面をミリングするために、前記3次元集積回路構造体に向かって集束イオン・ビームを導く命令、
露出させたどの水平導電層が関心領域の垂直位置に対応するのかを決定する命令、
関心領域に対応する、決定された前記水平導電層内の導体に接触させるために、電気プローブを下ろす命令、
前記電気プローブに電圧を印加する命令、および
前記関心領域を分析するために、印加した前記電圧の効果を観察する命令
を記憶した
システム。 - 前記3次元集積回路構造体に向かって前記集束イオン・ビームを導く前記コンピュータ・インストラクタが、前記水平導電層に対して垂直でない角度で前記集束イオン・ビームを導くコンピュータ命令を含む、請求項16に記載のシステム。
- 前記3次元集積回路構造体に向かって前記集束イオン・ビームを導く前記コンピュータ・インストラクタが、加工物表面に対して垂直に前記集束イオン・ビームを導くことを含み、ミリングされた表面に対する垂線が垂直成分を有するように、前記加工物を傾けるコンピュータ命令をさらに含む、請求項16または17に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261710668P | 2012-10-05 | 2012-10-05 | |
US61/710,668 | 2012-10-05 | ||
PCT/US2013/063556 WO2014055935A1 (en) | 2012-10-05 | 2013-10-04 | Multidimensional structural access |
Publications (3)
Publication Number | Publication Date |
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JP2015533263A true JP2015533263A (ja) | 2015-11-19 |
JP2015533263A5 JP2015533263A5 (ja) | 2016-12-08 |
JP6429780B2 JP6429780B2 (ja) | 2018-11-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015535841A Expired - Fee Related JP6429780B2 (ja) | 2012-10-05 | 2013-10-04 | 多次元構造体アクセス |
Country Status (7)
Country | Link |
---|---|
US (1) | US9696372B2 (ja) |
EP (1) | EP2904633B1 (ja) |
JP (1) | JP6429780B2 (ja) |
KR (1) | KR102041272B1 (ja) |
CN (1) | CN104813459B (ja) |
TW (1) | TWI618935B (ja) |
WO (1) | WO2014055935A1 (ja) |
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US9768083B1 (en) | 2017-06-27 | 2017-09-19 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells |
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KR20220082802A (ko) * | 2019-06-07 | 2022-06-17 | 칼 짜이스 에스엠테 게엠베하 | 개선된 3d 체적 이미지 재구성 정확도를 갖는 단면 이미징 |
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EP2904633B1 (en) | 2018-06-20 |
US9696372B2 (en) | 2017-07-04 |
EP2904633A1 (en) | 2015-08-12 |
KR102041272B1 (ko) | 2019-11-27 |
WO2014055935A4 (en) | 2014-06-19 |
TWI618935B (zh) | 2018-03-21 |
WO2014055935A1 (en) | 2014-04-10 |
KR20150063410A (ko) | 2015-06-09 |
JP6429780B2 (ja) | 2018-11-28 |
TW201421045A (zh) | 2014-06-01 |
CN104813459B (zh) | 2018-01-19 |
EP2904633A4 (en) | 2016-03-02 |
CN104813459A (zh) | 2015-07-29 |
US20150260784A1 (en) | 2015-09-17 |
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