JP2015518460A - 少なくとも2つの層を有する非緻密焼結セラミック成形体の製造プロセス - Google Patents
少なくとも2つの層を有する非緻密焼結セラミック成形体の製造プロセス Download PDFInfo
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Abstract
Description
前記第1の粉末状材料の予備焼結温度T1は、前記少なくとも第2の粉末状セラミック材料の予備焼結温度TSより高く;
前記少なくとも第1の粉末状セラミック材料の収縮曲線S1のコースは、前記少なくとも第2の粉末状材料の収縮曲線S2のコースと異なり、収縮曲線S1は収縮曲線S2より高温側にシフトしており;
前記複数の層を、予備焼結温度T1より低く且つ少なくともT3と等しい予備焼結温度TSでの共通温度処理に供して、理論密度まで進行していない焼結段階に留まる焼結を生じさせ;
収縮曲線S3を有し、材料が前記粉末状セラミック材料と混和性(Compatible)である−すなわち第1の粉末状セラミック材料より粒度が小さい−少なくとも1つの成分が前記第1の粉末状セラミック材料中に混合されていることで収縮曲線S1が改変され、それにより予備焼結温度TSの領域中で収縮曲線S1およびS2が同等化されている、
少なくとも2つの層を有する非緻密焼結セラミック成形体を製造するためのプロセス、によって本発明の目的は達成される。
成分1は、日本の東ソー株式会社製TZ−3YSB−C(T1:約1076℃) 650gと日本の東ソー株式会社製TZ−PX−242A(T3:約1038℃) 350gを、バッハオーフェン社(Bachofen)のミキサーであるタイプDynaMix(登録商標) CM200(またはCM100、CM500、CM1000)を用いてよく混合することにより得られる。軸圧縮法(axial compression method)を用いた成形では、当業者に公知の充填ユニットを用いて成分1をスタンパーに充填する。充填ユニットを引き離すことにより層を型中に均一に広げる。典型的には、かさ密度は圧縮された密度より低いので、層の厚さは最終製品の所望の層の厚さより厚く、使用される原材料に依存する。典型的には、粉末の充填層の厚さは、前記成分が圧縮された場合の対応する層厚の2.318倍であり、14.88mmである。この層の上に、80重量%の成分1と日本の東ソー株式会社製TZ−Yellow−SBCからなる20重量%の成分2との混合物22.29gを適用する。第2層が充填された後、これも平滑化し、その後、60重量%:40重量%の混合比でよく混合された成分1および2からなる第3の層で覆う。任意に、再度平滑化を行う。その後、型中の積層構造を200〜165MPaの圧力下で密度3.13g/cm3に圧縮する。
以下の成分1および2の混合比を用いて図2b〜2dに示されるブロックを実施例1と同様に製造した。
Claims (10)
- 層を形成する第1の粉末状セラミック材料を、少なくとも第2の層を形成する少なくとも第2の粉末状材料と接触させ;
前記第1の粉末状材料の予備焼結温度T1は、前記少なくとも第2の粉末状セラミック材料の予備焼結温度TSより高く;
前記少なくとも第1の粉末状セラミック材料の収縮曲線S1のコースは、前記少なくとも第2の粉末状材料の収縮曲線S2のコースと異なり、収縮曲線S1は収縮曲線S2より高温側にシフトしており;
前記複数の層を、前記予備焼結温度T1より低く且つ少なくともT3と等しい予備焼結温度TSでの共通温度処理に供して、理論密度まで進行していない焼結段階に留まる焼結を生じさせ;
収縮曲線S3を有し、材料が前記粉末状セラミック材料と混和性である−すなわち前記第1の粉末状セラミック材料より粒度が小さい−少なくとも1つの成分が前記第1の粉末状セラミック材料中に混合されていることで収縮曲線S1が改変され、それにより予備焼結温度TSの領域中で収縮曲線S1およびS2が同等化されている、
少なくとも2つの層を有する非緻密焼結セラミック成形体を製造するためのプロセス。 - 前記第1の粉末状セラミック材料がイットリウム安定化ジルコニアを含む、請求項1に記載のプロセス。
- 前記少なくとも第2の粉末状セラミック材料が、着色されたイットリウム安定化ジルコニアを含む、請求項1または2に記載のプロセス。
- 前記第1の粉末状セラミック材料と混合される、前記第1の粉末状セラミック材料と混和性である前記成分が、前記第1の粉末状材料より焼結活性が高く、且つ場合により前記第1の粉末状材料よりBET表面積が高い、請求項1〜3のいずれか一項に記載のプロセス。
- T1が900℃〜1300℃の範囲内である、請求項1〜4のいずれか一項に記載のプロセス。
- TSが850℃〜1250℃の範囲内である、請求項1〜5のいずれか一項に記載のプロセス。
- T3が850℃〜1200℃の範囲内である、請求項1〜6のいずれか一項に記載のプロセス。
- 得られた前記多孔質焼結成形体を成形プロセスにより更に加工する、請求項1〜7のいずれか一項に記載のプロセス。
- 請求項1〜7のいずれか一項に記載のプロセスによって得ることができる成形体。
- 2つ以上の層を備え、前記層が全て、多孔質焼結中に寸法的に安定である、請求項9に記載の成形体。
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Application Number | Priority Date | Filing Date | Title |
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EP12164282 | 2012-04-16 | ||
EP12164282.1 | 2012-04-16 | ||
US201261644055P | 2012-05-08 | 2012-05-08 | |
US61/644,055 | 2012-05-08 | ||
PCT/EP2013/057917 WO2013156483A1 (en) | 2012-04-16 | 2013-04-16 | Process for producing a non-dense sintered ceramic molded body having at least two layers |
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JP2015518460A true JP2015518460A (ja) | 2015-07-02 |
JP6392203B2 JP6392203B2 (ja) | 2018-09-19 |
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US10391671B2 (en) | 2019-08-27 |
US20150246459A1 (en) | 2015-09-03 |
JP6392203B2 (ja) | 2018-09-19 |
US20190337185A1 (en) | 2019-11-07 |
US11034051B2 (en) | 2021-06-15 |
EP2838466A1 (en) | 2015-02-25 |
WO2013156483A1 (en) | 2013-10-24 |
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