JP2015513384A - 水平型パワーled素子及びその製造方法 - Google Patents
水平型パワーled素子及びその製造方法 Download PDFInfo
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Abstract
Description
したがって、本発明の目的は、電極による発光面積の減少を最小化することができ、高出力及び高効率を有する構造の水平型パワーLED素子及びその製造方法を提供することにある。
望ましい実施例において、前記絶縁膜及びp型電極と前記金属基板との間に形成されたシード(seed)層をさらに含む。
つまり、本発明の水平型パワーLED素子は、従来の垂直型チップが大面積化されながら電流スプレッディングを円滑にするために、発光面にグリッドパターン(grid pattern)でn型電極を形成しており、発生し得る発光面積の減少をなくすことができる構造を有するようになる。
先ず、発光構造物形成ステップ(S210)が行われるが、発光構造物形成ステップ(S210)は、基板上にn型窒化ガリウム系半導体層(n−GaN層)、活性層及びp型窒化ガリウム系半導体層(p−GaN層)が順次積層された発光構造物を形成するステップである。
図4cに示すように、p型電極120とn型電極130を形成するが、p型電極120とn型電極130は、それぞれ順序に関係なく、同時に形成することもでき、別々に形成することもできる。ここで、n型電極130は、発光構造物エッチングステップ(S220)で露出されたn−GaN層111の形状に応じてグリッド状に形成することができる。
このような過程(図4a〜図4h)により図2に示すような水平型パワーLED素子100を製造することができる。
Claims (12)
- n型窒化ガリウム系半導体層(n−GaN層)、活性層及びp型窒化ガリウム系半導体層(p−GaN層)が順次積層された発光構造物と、
前記発光構造物のp−GaN層のうち前記活性層と隣接していない表面上に形成されたp型電極と、
前記発光構造物のn−GaN層のうち前記活性層と隣接している裏面上に形成されたn型電極と、
前記p型電極が露出されるようにし、前記露出部分を除いた、前記発光構造物のp−GaN層の表面側の全面に形成された絶縁膜と、
前記絶縁膜及びp型電極を覆うように形成された金属基板と、
前記発光構造物のn−GaN層の表面に形成される貫通孔により前記n型電極と接続されるように形成されたn−padと、を含む水平型パワーLED素子。 - 前記n−padが形成された貫通孔を除いた前記発光構造物のn−GaN層の表面に形成された凹凸をさらに含むことを特徴とする請求項1に記載の水平型パワーLED素子。
- 前記絶縁膜及びp型電極と前記金属基板との間に形成されたシード(seed)層をさらに含むことを特徴とする請求項1又は請求項2に記載の水平型パワーLED素子。
- 前記シード層は、前記p型電極が透明電極である場合、反射膜層として用いられることを特徴とする請求項3に記載の水平型パワーLED素子。
- 前記金属基板は、銅(Cu)、ニッケル、金(Au)、モリブデン(Mo)のうち1つ以上を含むことを特徴とする請求項1又は請求項2に記載の水平型パワーLED素子。
- 基板上にn型窒化ガリウム系半導体層(n−GaN層)、活性層及びp型窒化ガリウム系半導体層(p−GaN層)が順次積層された発光構造物を形成する発光構造物形成ステップと、
前記n−GaN層が露出され、既に設定されたチップサイズに相当する分離部を形成するために前記基板が露出されるように前記発光構造物をエッチングする発光構造物エッチングステップと、
前記p−GaN層上にp型電極を形成し、前記の露出されたn−GaN層上にn型電極を形成する電極形成ステップと、
前記p−GaN層及び前記の露出されたn−GaN層を覆うように絶縁膜を蒸着した後、前記p−GaN層上に形成されたp型電極が露出されるように前記の蒸着された絶縁膜をエッチングする絶縁膜形成ステップと、
前記絶縁膜及び前記p型電極を覆うように金属基板を形成する金属基板形成ステップと、
前記発光構造物から基板を除去する基板除去ステップと、
前記発光構造物のn−GaN層側の表面から前記n型電極と連結される貫通孔を形成し、前記貫通孔により前記n型電極と接続されるようにn−padを蒸着するn−pad形成ステップと、を含む水平型パワーLED素子の製造方法。 - 前記n−pad形成ステップを行う前又は行った後に前記発光構造物のn−GaN層側の表面に凹凸を形成する凹凸形成ステップをさらに含むことを特徴とする請求項6に記載の水平型パワーLED素子の製造方法。
- 前記金属基板形成ステップを行う前に前記絶縁膜及びp型電極を覆うようにシード(seed)層を形成するステップをさらに含むことを特徴とする請求項6又は請求項7に記載の水平型パワーLED素子の製造方法。
- 前記発光構造物エッチングステップは、前記p−GaN層を中心部に位置させて前記n−GaN層が露出されるようにp−GaN層及び活性層をエッチングした後、前記の露出されたn−GaN層の端部側に分離部を形成するために前記基板が露出されるようにエッチングして行われることを特徴とする請求項6又は請求項7に記載の水平型パワーLED素子の製造方法。
- 前記発光構造物エッチングステップは、前記分離部を形成するために前記基板が露出されるようにエッチングした後、前記発光構造物のn−GaN層の一部のみが露出されるようにエッチングして行われることを特徴とする請求項6又は請求項7に記載の水平型パワーLED素子の製造方法。
- 前記分離部を切断して別個のチップを形成するステップをさらに含むことを特徴とする請求項6又は請求項7に記載の水平型パワーLED素子の製造方法。
- 前記金属基板は、銅(Cu)、ニッケル、金(Au)、モリブデン(Mo)のうち1つ以上を含むことを特徴とする請求項6又は請求項7に記載の水平型パワーLED素子の製造方法。
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US10693042B2 (en) | 2017-11-23 | 2020-06-23 | Lg Display Co., Ltd. | Light-emitting device and display device using the same |
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KR102460072B1 (ko) | 2015-09-10 | 2022-10-31 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102443694B1 (ko) | 2016-03-11 | 2022-09-15 | 삼성전자주식회사 | 전류 확산 특성 및 광 추출 효율을 향상시킬 수 있는 발광 소자 |
CN107195747B (zh) * | 2017-06-01 | 2024-03-26 | 华南理工大学 | 一种微米尺寸倒装led芯片及其制备方法 |
KR102030323B1 (ko) * | 2018-11-23 | 2019-10-10 | 엘지디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
KR20200095210A (ko) * | 2019-01-31 | 2020-08-10 | 엘지전자 주식회사 | 반도체 발광 소자, 이의 제조 방법, 및 이를 포함하는 디스플레이 장치 |
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US10693042B2 (en) | 2017-11-23 | 2020-06-23 | Lg Display Co., Ltd. | Light-emitting device and display device using the same |
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US9343623B2 (en) | 2016-05-17 |
US20150053995A1 (en) | 2015-02-26 |
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WO2013141421A1 (ko) | 2013-09-26 |
US20160247963A1 (en) | 2016-08-25 |
US9466760B2 (en) | 2016-10-11 |
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