JP2015508625A5 - - Google Patents
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- Publication number
- JP2015508625A5 JP2015508625A5 JP2014553833A JP2014553833A JP2015508625A5 JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5 JP 2014553833 A JP2014553833 A JP 2014553833A JP 2014553833 A JP2014553833 A JP 2014553833A JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric film
- transducer
- oxide
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 6
- 239000000463 material Substances 0.000 claims 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261591344P | 2012-01-27 | 2012-01-27 | |
| US61/591,344 | 2012-01-27 | ||
| PCT/IB2013/050481 WO2013111040A1 (en) | 2012-01-27 | 2013-01-18 | Capacitive micro-machined transducer and method of manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015508625A JP2015508625A (ja) | 2015-03-19 |
| JP2015508625A5 true JP2015508625A5 (https=) | 2016-03-03 |
| JP6209537B2 JP6209537B2 (ja) | 2017-10-04 |
Family
ID=47780106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014553833A Active JP6209537B2 (ja) | 2012-01-27 | 2013-01-18 | 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9231496B2 (https=) |
| EP (1) | EP2806982B1 (https=) |
| JP (1) | JP6209537B2 (https=) |
| CN (1) | CN104066521B (https=) |
| BR (1) | BR112014018083A8 (https=) |
| MX (1) | MX2014008859A (https=) |
| RU (1) | RU2618731C2 (https=) |
| WO (1) | WO2013111040A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN2014CN04975A (https=) | 2011-12-20 | 2015-09-18 | Koninkl Philips Nv | |
| JP6209537B2 (ja) * | 2012-01-27 | 2017-10-04 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 |
| CN105592940B (zh) * | 2013-09-24 | 2018-09-25 | 皇家飞利浦有限公司 | Cmut装置制造方法、cmut装置和设备 |
| JP6381195B2 (ja) | 2013-10-22 | 2018-08-29 | キヤノン株式会社 | 静電容量型トランスデューサ及びその作製方法 |
| WO2017001965A1 (en) | 2015-07-02 | 2017-01-05 | Koninklijke Philips N.V. | Multi-mode capacitive micromachined ultrasound transducer and associated devices, systems, and methods |
| CN107799386B (zh) | 2016-09-06 | 2020-04-28 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
| CN107092880B (zh) * | 2017-04-14 | 2023-06-20 | 杭州士兰微电子股份有限公司 | 超声波指纹传感器及其制造方法 |
| CN112075090B (zh) * | 2018-05-03 | 2022-10-14 | 蝴蝶网络有限公司 | 用于cmos传感器上的超声换能器的压力端口 |
| JP7688911B2 (ja) | 2018-11-16 | 2025-06-05 | ヴァーモン エス．エー． | 容量性微細加工超音波トランスデューサ及びその製造方法 |
| EP4021649A1 (en) * | 2019-08-30 | 2022-07-06 | Vermon S.A. | Cmut transducer |
| US11988640B2 (en) * | 2020-03-11 | 2024-05-21 | Bfly Operations, Inc. | Bottom electrode material stack for micromachined ultrasonic transducer devices |
| CN113873404A (zh) * | 2021-09-29 | 2021-12-31 | 瑞声声学科技(深圳)有限公司 | 一种振膜及其制备方法、mems麦克风 |
| TWI819775B (zh) * | 2021-10-13 | 2023-10-21 | 台亞半導體股份有限公司 | 矽化物電容式微機電結構及其製造方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831394B2 (en) * | 2002-12-11 | 2004-12-14 | General Electric Company | Backing material for micromachined ultrasonic transducer devices |
| US6885056B1 (en) | 2003-10-22 | 2005-04-26 | Newport Fab, Llc | High-k dielectric stack in a MIM capacitor and method for its fabrication |
| KR100577562B1 (ko) * | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
| JP4347885B2 (ja) * | 2004-06-03 | 2009-10-21 | オリンパス株式会社 | 静電容量型超音波振動子の製造方法、当該製造方法によって製造された静電容量型超音波振動子を備えた超音波内視鏡装置、静電容量型超音波プローブおよび静電容量型超音波振動子 |
| JP4746291B2 (ja) * | 2004-08-05 | 2011-08-10 | オリンパス株式会社 | 静電容量型超音波振動子、及びその製造方法 |
| US7172947B2 (en) * | 2004-08-31 | 2007-02-06 | Micron Technology, Inc | High dielectric constant transition metal oxide materials |
| JP4371092B2 (ja) * | 2004-12-14 | 2009-11-25 | セイコーエプソン株式会社 | 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス |
| US7037746B1 (en) * | 2004-12-27 | 2006-05-02 | General Electric Company | Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane |
| ITRM20050093A1 (it) | 2005-03-04 | 2006-09-05 | Consiglio Nazionale Ricerche | Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato. |
| JP4724505B2 (ja) * | 2005-09-09 | 2011-07-13 | 株式会社日立製作所 | 超音波探触子およびその製造方法 |
| WO2008039845A2 (en) * | 2006-09-26 | 2008-04-03 | Applied Materials, Inc. | Fluorine plasma treatment of high-k gate stack for defect passivation |
| US8736000B1 (en) * | 2006-10-19 | 2014-05-27 | Sandia Corporation | Capacitive chemical sensor |
| JP4961260B2 (ja) * | 2007-05-16 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
| US8203912B2 (en) | 2007-07-31 | 2012-06-19 | Koninklijke Philips Electronics N.V. | CMUTs with a high-k dielectric |
| US8327521B2 (en) | 2007-09-17 | 2012-12-11 | Koninklijke Philips Electronics N.V. | Method for production and using a capacitive micro-machined ultrasonic transducer |
| JP5408937B2 (ja) * | 2007-09-25 | 2014-02-05 | キヤノン株式会社 | 電気機械変換素子及びその製造方法 |
| WO2009055767A2 (en) * | 2007-10-26 | 2009-04-30 | Trs Technologies, Inc. | Micromachined piezoelectric ultrasound transducer arrays |
| US8787116B2 (en) * | 2007-12-14 | 2014-07-22 | Koninklijke Philips N.V. | Collapsed mode operable cMUT including contoured substrate |
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| US9132693B2 (en) * | 2008-09-16 | 2015-09-15 | Koninklijke Philps N.V. | Capacitive micromachine ultrasound transducer |
| FR2939003B1 (fr) * | 2008-11-21 | 2011-02-25 | Commissariat Energie Atomique | Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules |
| JP5547418B2 (ja) * | 2009-03-19 | 2014-07-16 | 株式会社Ａｄｅｋａ | 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法 |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US8188786B2 (en) * | 2009-09-24 | 2012-05-29 | International Business Machines Corporation | Modularized three-dimensional capacitor array |
| CN102870245B (zh) * | 2010-05-07 | 2015-07-29 | 独立行政法人科学技术振兴机构 | 功能设备的制造方法、场效应晶体管和薄膜晶体管 |
| US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
| US9368603B2 (en) * | 2011-09-15 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-k metal gate device |
| US20130187236A1 (en) * | 2012-01-20 | 2013-07-25 | Globalfoundries Inc. | Methods of Forming Replacement Gate Structures for Semiconductor Devices |
| JP6209537B2 (ja) * | 2012-01-27 | 2017-10-04 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 |
| US20130270647A1 (en) * | 2012-04-17 | 2013-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for nfet with high k metal gate |
| US8846468B2 (en) * | 2012-12-17 | 2014-09-30 | Intermolecular, Inc. | Methods to improve leakage of high K materials |
-
2013
- 2013-01-18 JP JP2014553833A patent/JP6209537B2/ja active Active
- 2013-01-18 RU RU2014134810A patent/RU2618731C2/ru not_active IP Right Cessation
- 2013-01-18 WO PCT/IB2013/050481 patent/WO2013111040A1/en not_active Ceased
- 2013-01-18 US US14/369,341 patent/US9231496B2/en active Active
- 2013-01-18 MX MX2014008859A patent/MX2014008859A/es unknown
- 2013-01-18 CN CN201380006576.2A patent/CN104066521B/zh active Active
- 2013-01-18 EP EP13707213.8A patent/EP2806982B1/en active Active
- 2013-01-18 BR BR112014018083A patent/BR112014018083A8/pt not_active IP Right Cessation
-
2015
- 2015-02-18 US US14/624,945 patent/US10008958B2/en active Active
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