JP2015503224A5 - - Google Patents

Download PDF

Info

Publication number
JP2015503224A5
JP2015503224A5 JP2014540631A JP2014540631A JP2015503224A5 JP 2015503224 A5 JP2015503224 A5 JP 2015503224A5 JP 2014540631 A JP2014540631 A JP 2014540631A JP 2014540631 A JP2014540631 A JP 2014540631A JP 2015503224 A5 JP2015503224 A5 JP 2015503224A5
Authority
JP
Japan
Prior art keywords
gas
pulsing
inert
source
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014540631A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015503224A (ja
JP6325448B2 (ja
Filing date
Publication date
Priority claimed from US13/550,547 external-priority patent/US8808561B2/en
Application filed filed Critical
Publication of JP2015503224A publication Critical patent/JP2015503224A/ja
Publication of JP2015503224A5 publication Critical patent/JP2015503224A5/ja
Application granted granted Critical
Publication of JP6325448B2 publication Critical patent/JP6325448B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014540631A 2011-11-15 2012-11-12 プラズマ処理システムにおける不活性物優勢パルス化 Active JP6325448B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161560005P 2011-11-15 2011-11-15
US61/560,005 2011-11-15
US13/550,547 US8808561B2 (en) 2011-11-15 2012-07-16 Inert-dominant pulsing in plasma processing systems
US13/550,547 2012-07-16
PCT/IB2012/056348 WO2013072834A1 (en) 2011-11-15 2012-11-12 Inert-dominant pulsing in plasma processing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018076476A Division JP6676094B2 (ja) 2011-11-15 2018-04-12 プラズマ処理システムにおける不活性物優勢パルス化

Publications (3)

Publication Number Publication Date
JP2015503224A JP2015503224A (ja) 2015-01-29
JP2015503224A5 true JP2015503224A5 (cg-RX-API-DMAC7.html) 2015-12-24
JP6325448B2 JP6325448B2 (ja) 2018-05-16

Family

ID=48279609

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014540631A Active JP6325448B2 (ja) 2011-11-15 2012-11-12 プラズマ処理システムにおける不活性物優勢パルス化
JP2018076476A Active JP6676094B2 (ja) 2011-11-15 2018-04-12 プラズマ処理システムにおける不活性物優勢パルス化

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018076476A Active JP6676094B2 (ja) 2011-11-15 2018-04-12 プラズマ処理システムにおける不活性物優勢パルス化

Country Status (7)

Country Link
US (3) US8808561B2 (cg-RX-API-DMAC7.html)
JP (2) JP6325448B2 (cg-RX-API-DMAC7.html)
KR (1) KR102188927B1 (cg-RX-API-DMAC7.html)
CN (3) CN103987876B (cg-RX-API-DMAC7.html)
SG (2) SG11201401749SA (cg-RX-API-DMAC7.html)
TW (2) TWI623017B (cg-RX-API-DMAC7.html)
WO (1) WO2013072834A1 (cg-RX-API-DMAC7.html)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8808561B2 (en) * 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
US9184029B2 (en) 2013-09-03 2015-11-10 Lam Research Corporation System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor
US9318304B2 (en) 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
JP6316735B2 (ja) * 2014-12-04 2018-04-25 東京エレクトロン株式会社 プラズマエッチング方法
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10056264B2 (en) 2015-06-05 2018-08-21 Lam Research Corporation Atomic layer etching of GaN and other III-V materials
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9972504B2 (en) * 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US9872373B1 (en) 2016-10-25 2018-01-16 Applied Materials, Inc. Smart multi-level RF pulsing methods
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
WO2018231732A1 (en) * 2017-06-12 2018-12-20 Tokyo Electron Limited Method for reducing reactive ion etch lag in low k dielectric etching
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
US10784089B2 (en) * 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN112331554B (zh) * 2019-08-05 2022-03-04 长鑫存储技术有限公司 薄膜沉积方法、半导体器件的制作方法及半导体器件
CN112349860B (zh) * 2019-10-15 2023-03-14 广东聚华印刷显示技术有限公司 发光器件及其有机缓冲封装层与制作方法
WO2021076746A1 (en) 2019-10-18 2021-04-22 Lam Research Corporation Selective attachment to enhance sio2:sinx etch selectivity
KR102431292B1 (ko) 2020-01-15 2022-08-09 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
KR20220148249A (ko) 2020-02-28 2022-11-04 램 리써치 코포레이션 EUV 패터닝의 결함 감소를 위한 다층 하드마스크 (multi-layer hardmask)
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
US11651970B2 (en) 2020-05-19 2023-05-16 Tokyo Electron Limited Systems and methods for selective ion mass segregation in pulsed plasma atomic layer etching
EP4235757A3 (en) 2020-07-07 2023-12-27 LAM Research Corporation Integrated dry processes for patterning radiation photoresist patterning
CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具
US12280091B2 (en) 2021-02-03 2025-04-22 Lam Research Corporation Etch selectivity control in atomic layer etching
US20250191909A1 (en) * 2023-12-08 2025-06-12 Applied Materials, Inc. Uniform gapfill deposition on semiconductor substrates with varying geometries

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
US5164040A (en) * 1989-08-21 1992-11-17 Martin Marietta Energy Systems, Inc. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets
JPH04137532A (ja) * 1990-04-23 1992-05-12 Toshiba Corp 表面処理方法及びその装置
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JPH0621008A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 半導体装置の製造装置及び製造方法及び終点判定装置及び終点判定方法
JPH07226397A (ja) * 1994-02-10 1995-08-22 Tokyo Electron Ltd エッチング処理方法
JP3224469B2 (ja) * 1994-02-28 2001-10-29 三菱電機株式会社 薄膜形成法及びその装置
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
JP2000299461A (ja) * 1999-04-15 2000-10-24 Denso Corp 半導体装置の製造方法
EP1214459B1 (en) * 1999-08-17 2009-01-07 Tokyo Electron Limited Pulsed plasma processing method and apparatus
US7199328B2 (en) * 2001-08-29 2007-04-03 Tokyo Electron Limited Apparatus and method for plasma processing
US6991959B2 (en) * 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4066332B2 (ja) * 2002-10-10 2008-03-26 日本エー・エス・エム株式会社 シリコンカーバイド膜の製造方法
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7081414B2 (en) * 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
WO2008020267A2 (en) * 2006-08-16 2008-02-21 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
JP5219562B2 (ja) * 2007-04-02 2013-06-26 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
US8235001B2 (en) * 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
US8299391B2 (en) * 2008-07-30 2012-10-30 Applied Materials, Inc. Field enhanced inductively coupled plasma (Fe-ICP) reactor
US20100258169A1 (en) * 2009-04-13 2010-10-14 Applied Materials , Inc. Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US9324572B2 (en) * 2010-03-04 2016-04-26 Tokyo Electron Limited Plasma etching method, method for producing semiconductor device, and plasma etching device
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
US9318341B2 (en) 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
US8735291B2 (en) * 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8808561B2 (en) * 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems

Similar Documents

Publication Publication Date Title
JP2015503224A5 (cg-RX-API-DMAC7.html)
JP2015503223A5 (cg-RX-API-DMAC7.html)
JP6349257B2 (ja) ハイブリッドパルス化プラズマ処理システム
JP6325448B2 (ja) プラズマ処理システムにおける不活性物優勢パルス化
US12424410B2 (en) RF pulsing within pulsing for semiconductor RF plasma processing
KR102062930B1 (ko) 플라즈마 처리 시스템들에서의 혼합 모드 펄싱 에칭
JP2015505421A5 (cg-RX-API-DMAC7.html)
WO2011006018A3 (en) Apparatus and method for plasma processing
JP4714166B2 (ja) 基板のプラズマ処理装置及びプラズマ処理方法
KR20080020458A (ko) 기판의 플라즈마 처리장치 및 플라즈마 처리방법
CN101137269A (zh) 基板的等离子处理装置和等离子处理方法
WO2020117503A1 (en) Etching isolation features and dense features within a substrate
CN105225913A (zh) 等离子体处理装置以及等离子体处理方法
KR20190116762A (ko) 복합 rf 주파수를 사용하는 플라즈마 건식 세정 장치
JP2007080850A5 (cg-RX-API-DMAC7.html)
JP2007207925A (ja) プラズマエッチング方法
JP6523989B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP2025515937A (ja) 原子層の容量結合プラズマ堆積のための方法
JP2017193783A (ja) プラズマｃｖｄ装置及び膜の製造方法
JP2008066319A (ja) プラズマ処理装置及びプラズマ処理方法