JP2015501383A5 - - Google Patents

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Publication number
JP2015501383A5
JP2015501383A5 JP2014537511A JP2014537511A JP2015501383A5 JP 2015501383 A5 JP2015501383 A5 JP 2015501383A5 JP 2014537511 A JP2014537511 A JP 2014537511A JP 2014537511 A JP2014537511 A JP 2014537511A JP 2015501383 A5 JP2015501383 A5 JP 2015501383A5
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JP
Japan
Prior art keywords
power
generator
cathode
interval
pulse interval
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Application number
JP2014537511A
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English (en)
Japanese (ja)
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JP6236651B2 (ja
JP2015501383A (ja
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Publication date
Priority claimed from DE102011117177A external-priority patent/DE102011117177A1/de
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Publication of JP2015501383A publication Critical patent/JP2015501383A/ja
Publication of JP2015501383A5 publication Critical patent/JP2015501383A5/ja
Application granted granted Critical
Publication of JP6236651B2 publication Critical patent/JP6236651B2/ja
Active legal-status Critical Current
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JP2014537511A 2011-10-28 2012-10-08 電力パルスシーケンスを提供する方法 Active JP6236651B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011117177.4 2011-10-28
DE102011117177A DE102011117177A1 (de) 2011-10-28 2011-10-28 Verfahren zur Bereitstellung sequenzieller Leistungspulse
PCT/EP2012/004203 WO2013060415A1 (de) 2011-10-28 2012-10-08 Verfahren zur bereitstellung sequenzieller leistungspulse

Publications (3)

Publication Number Publication Date
JP2015501383A JP2015501383A (ja) 2015-01-15
JP2015501383A5 true JP2015501383A5 (https=) 2015-11-26
JP6236651B2 JP6236651B2 (ja) 2017-11-29

Family

ID=47177865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014537511A Active JP6236651B2 (ja) 2011-10-28 2012-10-08 電力パルスシーケンスを提供する方法

Country Status (24)

Country Link
US (1) US9906210B2 (https=)
EP (1) EP2771901B1 (https=)
JP (1) JP6236651B2 (https=)
KR (1) KR101930579B1 (https=)
CN (1) CN104246967B (https=)
AR (1) AR088318A1 (https=)
BR (1) BR112014010115B1 (https=)
CA (1) CA2853699C (https=)
DE (1) DE102011117177A1 (https=)
DK (1) DK2771901T3 (https=)
ES (1) ES2705974T3 (https=)
HU (1) HUE043149T2 (https=)
IN (1) IN2014DN03385A (https=)
MX (1) MX360116B (https=)
MY (1) MY175563A (https=)
PH (1) PH12014500941A1 (https=)
PL (1) PL2771901T3 (https=)
PT (1) PT2771901T (https=)
RU (1) RU2631670C2 (https=)
SG (1) SG11201401877QA (https=)
SI (1) SI2771901T1 (https=)
TR (1) TR201900589T4 (https=)
TW (1) TWI564415B (https=)
WO (1) WO2013060415A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011121770A1 (de) 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren
DE102013011075A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag TiB2 Schichten und ihre Herstellung
DE102013011072A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Targetpräparation
DE102013011071A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach TixSi1-xN Schichten mit CryAl1-yN Haftschicht und ihre Herstellung
RU2674179C2 (ru) 2013-07-03 2018-12-05 Эрликон Серфиз Солюшнз Аг, Пфеффикон СЛОИ TixSi1-xN И ИХ ПОЛУЧЕНИЕ
DE102013011073A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach TlxSi1-xN Schichten und ihre Herstellung
KR102117739B1 (ko) 2016-09-30 2020-06-09 주식회사 엘지화학 음극지지체형 고체산화물 연료전지 제조방법
EP3406761A1 (en) 2017-05-24 2018-11-28 Walter Ag A method for producing a coated cutting tool and a coated cutting tool
EP3406751A1 (en) 2017-05-24 2018-11-28 Walter Ag A coated cutting tool and a method for its production

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6141766A (ja) * 1984-08-06 1986-02-28 Hitachi Ltd スパツタリング方法およびスパツタ−装置
JPH07116596B2 (ja) * 1989-02-15 1995-12-13 株式会社日立製作所 薄膜形成方法、及びその装置
WO1996034124A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6878242B2 (en) * 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
EP1935000A1 (en) * 2005-10-13 2008-06-25 NV Bekaert SA A method to deposit a coating by sputtering
DE102006017382A1 (de) * 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
EP2102889B1 (en) * 2006-12-12 2020-10-07 Evatec AG Rf substrate bias with high power impulse magnetron sputtering (hipims)
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
EP2272080B1 (de) * 2008-04-28 2012-08-01 CemeCon AG Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern
JP5037475B2 (ja) * 2008-11-11 2012-09-26 株式会社神戸製鋼所 スパッタ装置
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
DE102011018363A1 (de) 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle
DE102011121770A1 (de) * 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren
JP7116596B2 (ja) * 2018-05-31 2022-08-10 川崎重工業株式会社 リード線挿入装置およびリード線挿入方法

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