JP2015185749A - semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor module which can achieve further reduction of inductance.SOLUTION: In a semiconductor module 10a, a positive electrode 40a, an upper arm element 20, an output electrode 50, a lower arm element 30 and a negative electrode 60a are sequentially layered. A connection part 59 of the output electrode 50 connects an upper arm part 51 of the output electrode 50, which is located closer to the negative electrode 60a than to the positive electrode 40a and a lower arm part 52 of the output electrode 50, which is located closer to the positive electrode 40a than to the negative electrode 60a so as to form a level difference. The upper arm element 20 and the lower arm element 30 are arranged in a space obtained by the level difference.

Description

  The present invention relates to a semiconductor module.

  A semiconductor module in which an IGBT (Insulated Gate Bipolar Transistor) element that is a switching element and a diode element that is a rectifying element are stacked and connected is manufactured.

  For example, Patent Document 1 discloses a semiconductor module including an upper arm element and a lower arm element connected in series with each other. In the semiconductor module of Patent Document 1, a flat output electrode plate is disposed between a positive electrode plate and a negative electrode plate. An upper arm element is disposed between the positive electrode plate and the output electrode plate. A lower arm element is disposed between the negative electrode plate and the output electrode plate.

JP 2009-089491 A

  As the distance between the positive electrode plate and the negative electrode plate becomes shorter, the current magnetic field of each of the positive electrode plate and the negative electrode plate when current flows in the opposite direction to the positive electrode plate and the negative electrode plate. The effects of canceling each other out are increased. However, in the semiconductor module of Patent Document 1, the upper arm element, the output electrode plate, and the lower arm element are disposed between the positive electrode plate and the negative electrode plate. For this reason, in the semiconductor module of Patent Document 1, it is difficult to reduce inductance.

  The present invention provides a semiconductor module that can further reduce inductance.

  A semiconductor module according to an aspect of the present invention includes a first electrode having a first surface, a second surface facing the first surface, a second electrode having a third surface opposite to the second surface, and a third electrode. A third electrode having a fourth surface facing the surface, a fifth surface and a sixth surface opposite to the fifth surface, the fifth surface being connected to the first surface, and the sixth surface being the second surface And a seventh surface and an eighth surface opposite to the seventh surface, the seventh surface is connected to the third surface, and the eighth surface is connected to the fourth surface. A second semiconductor element; and an insulating resin portion provided between the first surface and the second surface and between the third surface and the fourth surface, wherein the first surface is formed on the fifth surface. The first connection region that is connected and the first opposing region that does not overlap the first connection region, the second surface is the second connection region that is connected to the sixth surface, and the second opposing surface that faces the first opposing region Including the area, the third side A third connection region located on the opposite side of the second opposing region and connected to the seventh surface; and a third opposing region opposite to the second connection region, wherein the fourth surface is connected to the eighth surface. A fourth connection region and a fourth counter region opposite to the third counter region, wherein the second electrode includes a first part having the second connection region and the third counter region, and a second counter region and a third connection. A connecting portion that connects a second portion having a region, a first portion located closer to the third electrode than the first electrode, and a second portion located closer to the first electrode than the third electrode The connection part is a semiconductor module that connects the first part and the second part so as to form a step.

  According to the above aspect, the first part and the second part of the second electrode are connected to form a step, and the first semiconductor element and the second semiconductor element are arranged in the space obtained by the step, The distance between the first electrode and the second electrode can be shortened. Therefore, the inductance can be further reduced.

  In the above aspect, the semiconductor device further includes an insulating portion that is disposed in contact with the first opposing region and the second opposing region and has higher thermal conductivity than the resin portion, and the first electrode has a resin portion on the opposite side of the first surface. You may have the 9th surface exposed from.

  According to the above aspect, the second semiconductor element has the heat dissipation path via the second electrode, the insulating portion, and the ninth surface of the first electrode. Therefore, the heat dissipation performance of the second semiconductor element can be improved.

  The first electrode includes a first bonding region having a first connection region and a first bonding region opposite to the first connection region, a first bonding region, and a second bonding region facing the first bonding region. The second adhesive portion may include a first adhesive region and the second adhesive region, and an adhesive layer having conductivity.

  According to the above aspect, since the first adhesive region and the second adhesive region are adhered by the adhesive layer, the distance between the first connection region and the first opposing region is adjusted by adjusting the thickness of the adhesive layer. It becomes possible.

  The first semiconductor element has a first transistor, the second semiconductor element has a second transistor, the collector of the first transistor is connected to the fifth surface, and the emitter of the first transistor is connected to the sixth surface. The collector of the second transistor may be connected to the seventh surface, and the emitter of the second transistor may be connected to the eighth surface.

  According to the said aspect, since the collector and emitter of a 1st semiconductor element and a 2nd semiconductor element are arrange | positioned so that it may face the same direction, productivity of a semiconductor module can be improved.

  According to the semiconductor module of one embodiment of the present invention, inductance can be further reduced.

It is a circuit diagram which shows the three-phase inverter comprised by the semiconductor module of 1st Embodiment. It is sectional drawing which shows the semiconductor module of 1st Embodiment. It is the top view which looked at the semiconductor module of a 1st embodiment from the negative electrode side. It is sectional drawing which shows the semiconductor module of 2nd Embodiment. It is sectional drawing which shows the semiconductor module of 3rd Embodiment. It is sectional drawing which shows the semiconductor module of 4th Embodiment.

<First Embodiment>
Hereinafter, a semiconductor module according to an embodiment of the present invention will be described in detail with reference to the drawings. The semiconductor module of 1st Embodiment of this invention is used for the three-phase inverter which converts the direct-current power supplied from the vehicle-mounted battery into a three-phase alternating current, and performs the power conversion for a motor drive, for example. The semiconductor module of this embodiment is used for a three-phase inverter that performs power conversion of a motor that drives wheels of an electric vehicle or a hybrid car. As shown in FIG. 1, for example, in the three-phase inverter according to the present embodiment, a positive electrode 40 a that is a positive bus and a first electrode, and a negative electrode 60 a that is a negative bus and a third electrode. In addition, a DC voltage B, a capacitor CAP that smoothes the DC voltage applied from the DC voltage B, and three semiconductor modules 10a that are inverter circuits for converting the DC voltage B into an AC voltage are connected in parallel. ing.

  The semiconductor module 10a includes an upper arm element 20 that is a first semiconductor element and a lower arm element 30 that is a second semiconductor element. The upper arm element 20 is connected by stacking a first transistor Tr1 such as an IGBT element that is a switching element and a first diode D1 that is a rectifying element. The lower arm element 30 is connected by stacking a second transistor Tr2 such as an IGBT element that is a switching element and a second diode D2 that is a rectifying element.

  The collector C of the first transistor Tr1 of the upper arm element 20 is connected to a fifth surface 21 of the upper arm element 20 described later. The collector C of the first transistor Tr1 is connected to the positive electrode 40a via the fifth surface 21. The emitter E of the second transistor Tr2 of the lower arm element 30 is connected to an eighth surface 32 of the lower arm element 30 described later. The emitter E of the lower arm element 30 is connected to the negative electrode 60 a through the eighth surface 32.

  The emitter E of the first transistor Tr1 of the upper arm element 20 is connected to a sixth surface 22 of the upper arm element 20 described later. The emitter E of the first transistor Tr1 of the upper arm element 20 is connected to the output electrode 50, which is the second electrode, via the sixth surface 22. The collector C of the second transistor Tr2 of the lower arm element 30 is connected to a seventh surface 31 of the lower arm element 30 described later. The collector C of the second transistor Tr <b> 2 of the lower arm element 30 is connected to the output electrode 50 via the seventh surface 31. The output electrodes 50 of the three semiconductor modules 10a are connected to output terminals 50U, 50V, and 50W, respectively. The output terminals 50U, 50V and 50W are connected to the U-phase coil U, V-phase coil V and W-phase coil W of the motor M, respectively.

  Hereinafter, details of the configuration of the semiconductor module 10a of the present embodiment will be described. As shown in FIG. 2, for example, the semiconductor module 10a of this embodiment includes an upper arm element 20, a lower arm element 30, a positive electrode 40a, an output electrode 50, a negative electrode 60a, a mold resin 70, solder 80, and high heat. A conductive insulating resin sheet 90 is provided. In the semiconductor module 10a, a positive electrode 40a that is a first electrode, an output electrode 50 that is a second electrode, and a negative electrode 60a that is a third electrode are sequentially arranged with a space therebetween. Between the positive electrode 40a and the output electrode 50, the upper arm element 20 which is a first semiconductor element is disposed. A lower arm element 30 as a second semiconductor element is disposed between the output electrode 50 and the negative electrode 60a.

In the semiconductor module 10a, the upper arm element 20, the lower arm element 30, and the output electrode 50 are sealed with a mold resin 70 that is an insulating resin part between the positive side electrode 40a and the negative side electrode 60a. It is united. The mold resin 70 is a thermosetting resin containing a filler material such as SiO _{2 in} an epoxy resin. As shown in FIGS. 2 and 3, the positive electrode 40a and the negative electrode 60a extend in a direction perpendicular to the paper surface of FIG. As shown in FIG. 3, the output terminal 50U of the output electrode 50 extends in the same direction as the positive electrode 40a and the negative electrode 60a. The output terminals 50V and 50W of the other semiconductor module 10a of the three-phase inverter are the same as the output terminal 50U.

  The positive electrode 40a that is the first electrode is a metal plate having a flat plate shape. As the positive electrode 40a, a metal plate made of Cu, Ni, Al or the like, or a plate obtained by plating the surface of these metal plates with Ag, Au or the like can be used. The positive electrode 40a has a first surface 41 including a first connection region 43, a first opposing region 44, and a step region 41s. The positive electrode 40 a has a ninth surface 42 exposed from the mold resin 70, which is a resin portion, on the opposite side of the first surface 41. The first surface 41 includes a step region 41 s between the first connection region 43 and the first facing region 44. The first connection region 43 and the first counter region 44 do not overlap each other. In the facing direction D in which the first surface 41 of the positive electrode 40a and the second surface 53 of the output electrode 50 described later face each other due to the step region 41s, the distance between the first connection region 43 and the ninth surface 42 is It is longer than the distance between the one facing region 44 and the ninth surface 42.

  As described above, the upper arm element 20 that is the first semiconductor element includes the first transistor Tr1 and the first diode D1. The upper arm element 20 has a fifth surface 21 and a sixth surface 22 opposite to the fifth surface 21. The fifth surface 21 is connected to the collector C of the first transistor Tr1 and the cathode of the first diode D1. The sixth surface 22 is connected to the emitter E of the first transistor Tr1 and the anode of the first diode D1. The fifth surface 21 of the upper arm element 20 is connected to the first connection region 43 of the positive electrode 40a through the solder 80. Thus, the collector C of the first transistor Tr1 and the cathode of the first diode D1 are connected to the positive electrode 40a.

  The output electrode 50 that is the second electrode includes an upper arm portion 51, a lower arm portion 52, and a connection portion 59 that are metal plates each having a plate shape. As the output electrode 50, a metal plate such as Cu, Ni, Al or the like, or a surface of these metal plates subjected to plating treatment such as Ag or Au can be used. As for the output electrode 50, the upper arm part 51 and the lower arm part 52 are united by connecting with the connection surface 59c of the connection part 59. As shown in FIG. The output electrode 50 has a second surface 53 on the positive electrode 40 a side and a third surface 54 on the opposite side of the second surface 53. Between the first surface 41 of the positive electrode 40a and the second surface 53 of the output electrode 50, an insulating mold resin 70 is provided. The second surface 53 includes a second connection region 55 connected to the sixth surface 22 of the upper arm element 20 and a second facing region 56 facing the first facing region 44 of the positive electrode 40a. The third surface 54 is located on the opposite side of the second opposing region 56 and is connected to the seventh surface 31 of the lower arm element 30 and the third opposing region on the opposite side of the second connecting region 55. 58.

  The upper arm 51, which is the first part, is located closer to the negative electrode 60a than the positive electrode 40a. The upper arm portion 51 includes a second connection region 55 on the second surface 53 side, and includes a third facing region 58 on the third surface 54 side. For this reason, the third facing region 58 is located on the opposite side of the second connection region 55. The lower arm portion 52, which is the second portion, is located closer to the positive electrode 40a than the negative electrode 60a. The lower arm portion 52 includes a second facing region 56 on the second surface 53 side, and includes a third connection region 57 on the third surface 54 side. For this reason, the third connection region 57 is located on the opposite side of the second facing region 56.

  The connection part 59 connects the upper arm part 51 located on the negative electrode 60a side and the lower arm part 52 located on the positive electrode 40a side. The connecting portion 59 includes a bent portion 51b bent to the third surface 54 side and reaching the upper arm portion 51 on the negative electrode 60a side. The connecting portion 59 is bent to the second surface side and positive. A bent portion 52b reaching the lower arm portion 52 on the electrode 40a side is included. The bent portion 51b and the bent portion 52b are connected by welding at the connection surface 59c. The bent portion 51b and the bent portion 52b may be connected by bonding at the connection surface 59c. By the bent portion 51b and the bent portion 52b, the connecting portion 59 connects the upper arm portion 51 and the lower arm portion 52 so as to form a step. In the present embodiment, as a result, if the connecting portion 59 connects the upper arm portion 51 and the lower arm portion 52 so as to form a step, the upper arm portion 51 and the lower arm portion 52 from the beginning. An integrated member may be used. As a result, the connecting portion 59 may have any shape as long as it connects the upper arm portion 51 and the lower arm portion 52 so as to form a step.

  The second connection region 55 of the upper arm portion 51 is connected to the sixth surface 22 of the upper arm element 20 via the solder 80. Thus, the emitter E of the first transistor Tr1 and the anode of the first diode D1 are connected to the output electrode 50. The second opposing region 56 of the lower arm portion 52 opposes the first opposing region 44 of the positive electrode 40a along the opposing direction D. A high thermal conductive insulating resin sheet 90 that is an insulating portion is disposed so as to contact the first opposing region 44 of the positive electrode 40 a and the second opposing region 56 of the lower arm portion 52 of the output electrode 50. The high thermal conductive insulating resin sheet 90 insulates between the first facing region 44 and the second facing region 56.

The high thermal conductive insulating resin sheet 90 has a higher thermal conductivity than the mold resin 70. The high thermal conductive insulating resin sheet 90 has a uniform thickness in the opposing direction D over the entire surface. It should be noted that a high heat-dissipating filler material such as Al ₂ O ₃ , BN, or AlN that has a higher heat conductivity than the filler material such as SiO ₂ that is generally included in the mold resin 70 is mixed in the resin of the high heat-conductive insulating resin sheet 90. Therefore, heat dissipation can be further improved. The high thermal conductive insulating resin sheet 90 can be disposed by a technique such as potting.

  As described above, the lower arm element 30 that is the second semiconductor element includes the second transistor Tr2 and the second diode D2. The lower arm element 30 has a seventh surface 31 and an eighth surface 32 opposite to the seventh surface 31. The seventh surface 31 is connected to the collector C of the second transistor Tr2 and the cathode of the second diode D2. The eighth surface 32 is connected to the emitter E of the second transistor Tr2 and the anode of the second diode D2. The seventh surface 31 of the lower arm element 30 is connected to the third connection region 57 of the lower arm portion 52 of the output electrode 50 via the solder 80. Thus, the collector C of the second transistor Tr2 and the cathode of the second diode D2 are connected to the output electrode 50.

  The negative electrode 60a as the third electrode is a metal plate having a flat plate shape. As the negative electrode 60a, a metal plate made of Cu, Ni, Al or the like, or a plate obtained by performing a plating treatment of Ag, Au or the like on the surface of these metal plates can be used. The negative electrode 60a has a fourth surface 61 including a fourth connection region 63, a fourth counter region 64, and a step region 61s. An insulating mold resin 70 is provided between the third surface 54 of the output electrode 50 and the fourth surface 61 of the negative electrode 60a. The negative electrode 60 a has a tenth surface 62 exposed from the mold resin 70 on the opposite side of the fourth surface 61. The fourth surface 61 includes a step region 61 s between the fourth connection region 63 and the fourth counter region 64. Due to the step region 61 s, the distance between the fourth connection region 63 and the tenth surface 62 in the facing direction D is longer than the distance between the fourth facing region 64 and the tenth surface 62.

  The fourth connection region 63 of the negative electrode 60 a is connected to the eighth surface 32 of the lower arm element 30 via the solder 80. Thereby, the emitter E of the second transistor Tr2 and the anode of the second diode D2 are connected to the negative electrode 60a. Therefore, the upper arm element 20 and the lower arm element 30 are arranged so that the collectors C and emitters E thereof face the same direction.

  The fourth opposing region 64 of the negative electrode 60 a faces the third opposing region 58 of the upper arm portion 51 of the output electrode 50 along the opposing direction D. The high thermal conductive insulating resin sheet 90 is disposed so as to contact the fourth opposing region 64 of the negative electrode 60 a and the third opposing region 58 of the upper arm portion 51 of the output electrode 50. The high thermal conductive insulating resin sheet 90 insulates between the third opposing region 58 and the fourth opposing region 64.

As described above, the connection portion 59 of the output electrode 50 connects the upper arm portion 51 located on the negative electrode 60a side and the lower arm portion 52 located on the positive electrode 40a side so as to form a step. To do. For this reason, the first connection region 43 of the positive electrode 40a and the third connection region 57 of the output electrode 50 are located on substantially the same plane. Therefore, in the facing direction D in which the first surface 41 of the positive electrode 40a and the second surface 53 of the output electrode 50 face each other, the first connection region 43 of the positive electrode 40a and the third connection region 57 of the output electrode 50 The distance d ₁ is shorter than the distance d ₂ between the first connection region 43 of the positive electrode 40 a and the third facing region 58 of the output electrode 50.

  Similarly, the fourth connection region 63 of the negative electrode 60a and the second connection region 55 of the output electrode 50 are located on substantially the same plane. Therefore, in the facing direction D, the distance between the fourth connection region 63 of the negative electrode 60a and the second connection region 55 of the output electrode 50 is the second facing of the fourth connection region 63 of the negative electrode 60a and the output electrode 50. The distance from the region 56 is shorter.

  2 and 3, the width of the positive electrode 40a and the width of the negative electrode 60a are the same. Therefore, the entire range of the first surface 41 of the positive electrode 40a is opposed to the entire range of the fourth surface 61 of the negative electrode 60a in the direction horizontal to the paper surface of FIGS.

  In the present embodiment, the connection part 59 of the output electrode 50 connects the upper arm part 51 located on the negative electrode 60a side and the lower arm part 52 located on the positive electrode 40a side so as to form a step. To do. For this reason, although the output electrode 50 is disposed between the positive electrode 40a and the negative electrode 60a, the upper arm element 20 and the lower arm element 30 are disposed in the space obtained by the step. Therefore, the distance between the positive electrode 40a and the negative electrode 60a can be shortened. Therefore, when current flows in the opposite direction to the positive electrode 40a and the negative electrode 60a, the effects of canceling out the magnetic fields of the currents of the positive electrode 40a and the negative electrode 60a are increased. Therefore, the inductance can be further reduced. In addition, since the distance between the positive electrode 40a and the negative electrode 60a can be shortened, the semiconductor module 10a can be further downsized.

  In a semiconductor module having a heat dissipation path through another element, the heat dissipation element is far from the heat dissipation surface, and the thermal resistance is large. Further, thermal interference occurs between the elements that dissipate heat, resulting in poor heat dissipation. On the other hand, in the present embodiment, the collector C side of the upper arm element 20 has a heat dissipation path via the positive electrode 40a. The emitter E side of the upper arm element 20 has a heat dissipation path through the output electrode 50, the high thermal conductive insulating resin sheet 90, and the negative electrode 60a. Similarly, the emitter E side of the lower arm element 30 has a heat dissipation path through the negative electrode 60a. The collector C side of the lower arm element 30 has a heat radiation path through the output electrode 50, the high thermal conductive insulating resin sheet 90, and the positive electrode 40a. Therefore, both the upper arm element 20 and the lower arm element 30 have a heat dissipation path that does not pass through other elements. Further, heat can be efficiently radiated from both the ninth surface 42 of the positive electrode 40a and the tenth surface 62 of the negative electrode 60a exposed from the mold resin 70. For this reason, heat dissipation can be improved.

  When adjacent electrodes are exposed from one outer surface of the mold resin, the resistance to migration is lowered, and there is a risk of creeping discharge through the outer surface of the mold resin. For this reason, the distance between electrodes is required. On the other hand, in the present embodiment, the ninth surface 42 of the positive electrode 40a and the tenth surface 62 of the negative electrode 60a are each exposed from the mold resin 70 one by one. Therefore, resistance to migration can be improved. Further, the risk of creeping discharge through the outer surface of the mold resin 70 can be reduced. For this reason, the distance between electrodes becomes unnecessary. The semiconductor module 10a can be reduced in size.

  Moreover, in this embodiment, the area of the positive side electrode 40a and the negative side electrode 60a which oppose each other can be expanded. For this reason, the effect that the magnetic fields of the currents of the positive electrode 40a and the negative electrode 60a cancel each other is increased. Therefore, the inductance can be further reduced. Therefore, for example, when the semiconductor module 10a of this embodiment is applied to a hybrid car, fuel efficiency can be improved.

  Further, if the collector and emitter of the two IGBTs are inverted and arranged in different directions, the positions of the IGBT junctions differ between the collector side and the emitter side. Therefore, in the manufacture of a semiconductor module, when a void inspection is performed at a solder joint location, the inspection must be performed with a focus on each solder joint location. As a result, the inspection time becomes longer and the productivity is lowered. On the other hand, in the present embodiment, the upper arm element 20 and the lower arm element 30 are arranged such that their collectors C and emitters E face the same direction. Therefore, inspection time can be shortened and productivity can be improved.

Second Embodiment
For example, the positive electrode 40b that is the first electrode of the semiconductor module 10b according to the second embodiment of the present invention shown in FIG. 4 includes a first adhesive portion 45, a second adhesive portion 46, and an interelectrode solder 47. The first bonding portion 45 includes a first connection region 43 to which the fifth surface 21 of the upper arm element 20 is connected and a first bonding region 48 on the opposite side of the first connection region 43. The second adhesive portion 46 includes a first opposing region 44 that faces the second opposing region 56 of the output electrode 50 and a second adhesive region 49 that faces the first adhesive region 48 of the first adhesive portion 45. The inter-electrode solder 47 as an adhesive layer bonds the first adhesive region 48 of the first adhesive portion 45 and the second adhesive region 49 of the second adhesive portion 46 in the facing direction D. Further, the interelectrode solder 47 has conductivity. The interelectrode solder 47 has an arbitrary thickness in the facing direction D.

  Similarly, the negative electrode 60 b that is the third electrode includes a first adhesive portion 65, a second adhesive portion 66, and an interelectrode solder 67. The first bonding portion 65 has a fourth connection region 63 to which the eighth surface 32 of the lower arm element 30 is connected and a first bonding region 68 on the opposite side of the fourth connection region 63. The second adhesive portion 66 includes a fourth opposing region 64 that faces the third opposing region 58 of the output electrode 50 and a second adhesive region 69 that faces the first adhesive region 68 of the first adhesive portion 65. The inter-electrode solder 67 as an adhesive layer bonds the first adhesive region 68 of the first adhesive portion 65 and the second adhesive region 69 of the second adhesive portion 66 in the facing direction D. Further, the interelectrode solder 67 has conductivity. The interelectrode solder 67 has an arbitrary thickness in the facing direction D.

  In the present embodiment, since the first adhesion region 48 and the second adhesion region 49 are connected by the interelectrode solder 47, the distance in the facing direction D between the first connection region 43 and the first facing region 44 can be adjusted. Become. Further, since the first adhesive region 68 and the second adhesive region 69 are connected by the inter-electrode solder 67, the distance in the opposing direction D between the fourth connecting region 63 and the fourth opposing region 64 can be adjusted. Therefore, it can be manufactured easily.

  That is, in the present embodiment, the thickness of the solder 80 that connects the positive electrode 40b, the upper arm element 20, the output electrode 50, the lower arm element 30, and the negative electrode 60b by the interelectrode solder 47 and the interelectrode solder 67. Variations can be absorbed. Therefore, for example, variation in heat generation that occurs when the motor M cannot rotate can be reduced. In addition, when the electrode is used as a lead frame when the semiconductor module 10b is manufactured, the lead frame having a uniform thickness can be used, which facilitates the manufacture. Moreover, the freedom degree of the thickness of the components which comprise the semiconductor module 10b increases. Moreover, since the freedom degree of the thickness of the 2nd adhesion parts 46 and 66 increases, the optimization of the thickness of the 2nd adhesion parts 46 and 66 used as a heat sink can be aimed at more.

<Third Embodiment>
For example, in the semiconductor module 10c of the third embodiment of the present invention shown in FIG. 5, the high thermal conductivity insulating resin sheet 90 in the first embodiment is replaced with the high thermal conductivity liquid resin 110 which is a liquid resin having high thermal conductivity. It has been replaced. Like the high thermal conductive insulating resin sheet 90 disposed by potting or the like, the high thermal conductive liquid resin 110 is a resin in which a high heat dissipation filler material such as Al ₂ O ₃ , BN or AlN is mixed in addition to the SiO ₂ filler material. It is. Before sealing with the mold resin 70, the high thermal conductive liquid resin 110 is applied between the positive electrode 40a and the output electrode 50 and between the negative electrode 60a and the output electrode 50. The curing condition of the high thermal conductive liquid resin 110 is set to a condition that is cured simultaneously when the mold resin 70 is cured. In the present embodiment, the positive electrode 40a and the output electrode 50 and the negative electrode 60a and the output electrode 50 are insulated from each other by the liquid high thermal conductive liquid resin 110. For this reason, when manufacturing the semiconductor module 10c, it is possible to absorb variations in the thickness of the solder 80 that connects the positive side electrode 40a, the upper arm element 20, the output electrode 50, the lower arm element 30, and the negative side electrode 60a. Therefore, the semiconductor module 10c can be more easily manufactured.

<Fourth embodiment>
For example, in the semiconductor module 10d of the fourth embodiment of the present invention shown in FIG. 6, the high thermal conductive insulating resin sheet 90 in the first embodiment is removed, and the negative electrode is provided between the positive electrode 40a and the output electrode 50. 60a and the output electrode 50 are insulated by the mold resin 70. In the present embodiment, the mold resin 70 can be a resin having high thermal conductivity. Specifically, as the mold resin 70, a high heat dissipation filler material such as Al ₂ O ₃ , BN, or AlN having a higher thermal conductivity than a filler material such as SiO ₂ generally included in the mold resin 70 is mixed in the epoxy resin. A thermosetting resin can be used.

  In the present embodiment, the high-side conductive insulating resin sheet 90 is not provided between the positive electrode 40 a and the output electrode 50 and between the negative electrode 60 a and the output electrode 50, and is insulated by the mold resin 70. For this reason, the number of parts can be reduced and the manufacturing cost can be reduced. Also. Since the positive electrode 40a and the output electrode 50 and the negative electrode 60a and the output electrode 50 are insulated by the mold resin 70, the positive electrode 40a, the upper arm element 20, Variations in the thickness of the solder 80 connecting the output electrode 50, the lower arm element 30, and the negative electrode 60a can be absorbed. Therefore, the semiconductor module 10d can be more easily manufactured.

  The semiconductor module according to the embodiment of the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the embodiment of the present invention. For example, in the above description, the description has focused on an aspect in which the pair of upper arm element 20 and lower arm element 30 in FIG. 1 are provided in one semiconductor module 10a. However, the semiconductor modules 10a to 10d shown in the embodiments of the present invention can be configured such that, for example, three pairs of the upper arm element 20 and the lower arm element 30 are provided in one semiconductor module.

  In the above embodiment, the positive side electrodes 40a and 40b, the upper arm portion 51, the lower arm portion 52, and the negative side electrodes 60a and 60b have a flat plate shape, and the first surface 41, the second surface 53, The third surface 54, the fourth surface 61, the fifth surface 21, the sixth surface 22, the seventh surface 31, the eighth surface 32, the ninth surface 42, and the tenth surface 62 have been mainly described. However, in this embodiment, the positive side electrodes 40a and 40b, the upper arm part 51, the lower arm part 52, and the negative side electrodes 60a and 60b have shapes other than flat plates, and the first surface 41, the second surface 53, The third surface 54, the fourth surface 61, the fifth surface 21, the sixth surface 22, the seventh surface 31, the eighth surface 32, the ninth surface 42, and the tenth surface 62 may be curved surfaces.

DESCRIPTION OF SYMBOLS 10a-10d ... Semiconductor module, 20 ... Upper arm element, 21 ... 5th surface, 22 ... 6th surface, 30 ... Lower arm element, 31 ... 7th surface, 32 ... 8th surface, 40a, 40b ... Positive side electrode 41 ... first surface, 41s ... step region, 42 ... 9th surface, 43 ... first connection region, 44 ... first opposing region, 45 ... first adhesive portion, 46 ... second adhesive portion, 47 ... between electrodes Solder, 48 ... first adhesive region, 49 ... second adhesive region, 50 ... output electrode, 50U, 50V, 50W ... output terminal, 51 ... upper arm portion, 51b ... bending portion, 52 ... lower arm portion, 52b ... bending 53, second surface, 54, third surface, 55, second connection region, 56, second opposing region, 57, third connection region, 58, third opposing region, 59, connection portion, 59c, connection. Surface, 60a, 60b ... negative electrode, 61 ... fourth surface, 61s ... step region, 62 ... tenth surface 63 ... 4th connection area, 64 ... 4th opposing area, 65 ... 1st adhesion part, 66 ... 2nd adhesion part, 67 ... Solder between electrodes, 68 ... 1st adhesion area, 69 ... 2nd adhesion area, 70 ... Mold resin, 80 ... solder, 90 ... high thermal conductive insulating resin sheet, 110 ... high thermal conductive liquid resin, Tr1 ... first transistor, Tr2 ... second transistor, D1 ... first diode, D2 ... second diode, E ... emitter, C ... collector, B ... DC voltage, CAP ... capacitors, M ... motor, U ... U-phase coil, V ... V-phase coil, W ... W-phase coils, D ... opposite direction, _{d 1, d} 2 _... distance.

Claims (4)

A first electrode having a first surface;
A second electrode having a second surface facing the first surface and a third surface opposite to the second surface;
A third electrode having a fourth surface facing the third surface;
A first semiconductor element having a fifth surface and a sixth surface opposite to the fifth surface, wherein the fifth surface is connected to the first surface, and the sixth surface is connected to the second surface; ,
A second semiconductor element having a seventh surface and an eighth surface opposite to the seventh surface, wherein the seventh surface is connected to the third surface, and the eighth surface is connected to the fourth surface; ,
An insulating resin portion provided between the first surface and the second surface and between the third surface and the fourth surface;
With
The first surface includes a first connection region connected to the fifth surface, and a first opposing region that does not overlap the first connection region,
The second surface includes a second connection region connected to the sixth surface, and a second facing region facing the first facing region,
The third surface includes a third connection region located on the opposite side of the second opposing region and connected to the seventh surface, and a third opposing region on the opposite side of the second connection region,
The fourth surface includes a fourth connection region connected to the eighth surface, and a fourth facing region facing the third facing region,
The second electrode is
A first portion having the second connection region and the third opposing region;
A second part having the second opposing region and the third connection region;
A connecting portion connecting the first portion located closer to the third electrode than the first electrode and the second portion located closer to the first electrode than the third electrode;
Have
The said connection part is a semiconductor module which connects the said 1st part and the said 2nd part so that a level | step difference may be made. An insulating portion that is disposed so as to be in contact with the first opposing region and the second opposing region, and has higher thermal conductivity than the resin portion;
2. The semiconductor module according to claim 1, wherein the first electrode has a ninth surface exposed from the resin portion on a side opposite to the first surface. The first electrode is
A first adhesive portion having the first connection region and a first adhesion region opposite to the first connection region;
A second adhesive portion having the first opposing region and a second adhesive region facing the first adhesive region;
Adhering the first adhesive region and the second adhesive region, and having a conductive adhesive layer;
The semiconductor module according to claim 1, comprising: The first semiconductor element includes a first transistor;
The second semiconductor element includes a second transistor;
A collector of the first transistor is connected to the fifth surface;
An emitter of the first transistor is connected to the sixth surface;
A collector of the second transistor is connected to the seventh surface;
The semiconductor module according to claim 1, wherein an emitter of the second transistor is connected to the eighth surface.

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