JP5811072B2 - Power module - Google Patents

Description

  The present invention relates to a power module, and particularly to a power module including a pair of switching elements.

  In a power control power module including a pair of switching elements, since a large current flows intermittently, a reduction in circuit inductance is required from the viewpoint of suppressing a surge voltage during switching. For example, in Patent Document 1, the P terminal plate (P bus bar) of one switching element and the N terminal plate (N bus bar) of the other switching element are insulated so that the directions of currents flowing through them are opposite. A power module arranged with a substrate interposed therebetween is disclosed. Patent Document 2 discloses a power module in which a P terminal plate and an N terminal plate are arranged up and down across the output terminal plates of both switching elements.

JP 2009-295633 A JP 2001-332688 A

  However, in the power module as described in Patent Document 1, since only the P terminal plate and the N terminal plate are arranged so that the directions of the currents are opposite, the effect of reducing the inductance is insufficient. is there.

  Further, in the power module described in Patent Document 2, as shown in FIG. 21, the P terminal plate P of the first transistor Tr1, the N terminal plate N of the second transistor Tr2, and the first transistor Tr1 An output terminal plate U common to the second transistor Tr2 is provided. In a power module such as Patent Document 2, as shown in FIG. 22, the P terminal plate P and the N terminal plate N that are arranged above and below the output terminal plate U are separated from each other. The effect of reducing the inductance with the N terminal plate N is poor. In the power module as in Patent Document 2, the effect of reducing the inductance is obtained only in the region z1 and the region z2, and thus the effect of reducing the inductance is insufficient.

  This invention is made | formed in view of the said subject, and it aims at providing the power module which can improve the effect of reducing an inductance.

  The present invention includes a first switching element having a P terminal on the high potential side and a first output terminal on the lower potential side than the P terminal, and a second output on the higher potential side than the N terminal on the low potential side and the N terminal. And the P terminal and the N terminal are arranged in parallel so that the direction of the current flowing through the P terminal and the direction of the current flowing through the N terminal are opposite to each other in parallel. The first output terminal is connected between the N terminal and the first output terminal so that the direction of the current flowing through the P terminal and the direction of the current flowing through the first output terminal are parallel to each other. The second output terminal is disposed between the P terminal and the second output terminal so that the direction of the current flowing through the N terminal and the direction of the current flowing through the second output terminal are parallel to each other. Power module arranged with N terminal in between It is.

  According to this configuration, the first switching element having the P terminal on the high potential side and the first output terminal on the low potential side, the second terminal having the N terminal on the low potential side and the second output terminal on the high potential side. In a power module including a switching element, the P terminal and the N terminal are arranged in parallel so that the direction of the current flowing through the P terminal and the direction of the current flowing through the N terminal are parallel to each other. The first output terminal sandwiches the P terminal between the N terminal and the first output terminal so that the direction of the current flowing through the terminal and the direction of the current flowing through the first output terminal are parallel to each other. The second output terminal is arranged between the P terminal and the second output terminal so that the direction of the current flowing through the N terminal and the direction of the current flowing through the second output terminal are parallel to each other. The terminals are arranged so as to sandwich the terminals. For this reason, the magnetic field is canceled at three points by the current flowing through the P terminal and the N terminal, the current flowing through the P terminal and the first output terminal, and the current flowing through the N terminal and the second output terminal, thereby reducing inductance. The effect to do can be improved.

  In this case, the semiconductor device further includes an insulating substrate having a first surface and a second surface, each of the P terminal and the N terminal having a plate shape having a width larger than the thickness, and the P terminal is disposed on the first surface of the insulating substrate. It is preferable that the terminals are disposed on the second surface of the insulating substrate, and the P terminal and the N terminal are stacked so as to sandwich the insulating substrate therebetween.

  According to this configuration, the insulating substrate having the first surface and the second surface is further provided, the P terminal and the N terminal are each formed in a plate shape having a width larger than the thickness, and the P terminal is disposed on the first surface of the insulating substrate. The N terminal is disposed on the second surface of the insulating substrate, and the P terminal and the N terminal are stacked so as to sandwich the insulating substrate therebetween. For this reason, a current flows in the opposite direction to the wide plate-like P terminal and N terminal arranged in layers with the insulating substrate interposed therebetween, and the effect of reducing the inductance can be further improved.

  In this case, it is preferable that the first switching element is disposed on the first surface of the insulating substrate, and the second switching element is disposed on the second surface of the insulating substrate.

  According to this configuration, since the phases of the first switching element and the second switching element are stacked with the insulating substrate interposed therebetween, the projected area onto the insulating substrate is reduced, and the power module can be reduced in size. .

  In this case, the U-phase first switching element disposed on the first surface of the insulating substrate, the V-phase first switching element disposed on the first surface of the insulating substrate, and the first surface of the insulating substrate. First switching element for W phase, second switching element for U phase disposed on the second surface of the insulating substrate, second switching element for V phase disposed on the second surface of the insulating substrate, and insulation A second switching element for W phase disposed on the second surface of the substrate, the first switching element for U phase, the first switching element for V phase, and the first switching element for W phase are U A first output terminal for the phase, a first output terminal for the V phase, a first output terminal for the W phase, and a common P terminal, and a second switching element for the U phase, The second switching element and the second switching element for the W phase are the U phase. A second output terminal of a second output terminal for the second output terminal and a W-phase for the V-phase, it is preferable to have each an N terminal in common.

  According to this configuration, the first switching elements for three phases for the U phase, the V phase, and the W phase are disposed on the first surface of the insulating substrate, and the U phase and V phase are disposed on the second surface of the insulating substrate. Second switching elements for three phases for the first and second phases are arranged, and the first switching elements for three phases for the U phase, the V phase and the W phase are respectively for the U phase, the V phase and the W phase. A first output terminal for three phases and a common P terminal, and second switching elements for three phases for U phase, V phase and W phase are for U phase, V phase and It has a second output terminal for three phases for the W phase and an N terminal in common. Therefore, in the PN wiring of the P terminal and the N terminal for three phases, it can be arranged in parallel so that the directions of the currents are opposite to each other with a simple circuit wiring pattern (PN parallel running). The inductance of the PN wiring can be efficiently reduced.

  According to the power module of the present invention, the effect of reducing inductance can be improved.

It is a top view which shows the power module which concerns on embodiment. It is sectional drawing in the AA line of the power module of FIG. It is sectional drawing in the BB line of the power module of FIG. It is a top view which shows P heat sink. It is a top view which shows a P terminal board. It is a top view which shows an upper phase output terminal board. It is a circuit diagram for one phase of the power module concerning an embodiment. It is a flowchart which shows the process of manufacturing the upper phase side of the power module which concerns on embodiment. It is sectional drawing in the AA line | wire in the time of a 1st reflow process being performed in the manufacturing process of the upper phase side of the power module shown in FIG. It is sectional drawing in the BB line | wire at the time of a 1st reflow process being performed in the manufacturing process by the side of the upper phase of the power module shown in FIG. It is sectional drawing in the AA line | wire at the time of a switching element and a control terminal being wire-bonded in the manufacturing process of the upper phase side of the power module shown in FIG. It is sectional drawing in the AA line | wire at the time of a 2nd reflow process being performed in the manufacturing process by the side of the upper phase of the power module shown in FIG. It is sectional drawing in the BB line | wire at the time of performing a 2nd reflow process in the manufacturing process of the upper phase side of the power module shown in FIG. It is sectional drawing in the AA line | wire at the time of mold shaping | molding in the manufacturing process by the side of the upper phase of the power module shown in FIG. It is sectional drawing in the BB line at the time of mold shaping | molding in the manufacturing process of the upper phase side of the power module shown in FIG. FIG. 2 is a plan view at the time when molding is performed in the manufacturing process on the upper phase side of the power module illustrated in FIG. 1. It is a top view at the time of joining a P terminal board to the power module of FIG. It is sectional drawing in the AA line of the power module of FIG. It is sectional drawing in the BB line of the power module of FIG. It is a figure which shows the electric current which flows through the upper phase output terminal board in the power module of this embodiment, a P terminal board, an N terminal board, and a lower phase output terminal board, and its effect | action. It is a circuit diagram for one phase of the conventional power module. It is a figure which shows the electric current which flows through the P terminal board in the conventional power module, an output terminal board, and an N terminal board, and its effect | action.

  Hereinafter, a power module according to an embodiment of the present invention will be described with reference to the drawings. As shown in the plan view of FIG. 1, the power module 10 of this embodiment includes a U-phase module 30U, a V-phase module 30V, and a W-phase module 30W that are sealed with a sealing resin 20. The power module 10 of this embodiment is configured as a three-phase inverter of U phase, V phase, and W phase using two switching elements for each phase.

As shown in the plan view of FIG. 1, the cross-sectional view taken along the line AA in FIG. 2, and the cross-sectional view taken along the line BB in FIG. 3, the power module 10 As shown in the plan view, a common P heat radiation plate _RP is disposed in the three phases of the U-phase module 30U, the V-phase module 30V, and the W-phase module 30W. P radiating plate _{R P} has the P terminal plate connecting terminal JT _P. Similarly, the insulating substrate bottom surface 40b of the insulating substrate 40, U-phase module 30 U, common N radiating plate _{R N} to the three-phase V-phase modules 30V and W-phase module 30W are arranged. N radiating plate _{R N} has the N terminal plate connecting terminal JT _N. Insulating substrate 40 preferably has a thickness of 0.5 mm or less in order to improve the effect of reducing inductance.

As shown in FIGS. 1 and 3, the P radiating plate R _P through P terminal board connecting terminal JT _P, U-phase module 30U as shown in the plan view of FIG. 5, V-phase module 30V and the W-phase A common P terminal plate P is joined to the three phases of the module 30W. The P terminal board P is a plate-like bus bar that is wider than the thickness. Similarly, the N radiating plate R _N through N terminal board connecting terminal JT _N, U-phase module 30 U, V-phase module 30V and the W-phase module common wide plate-like than the thickness in the three phases of 30W N terminal plates N are joined. The N terminal plate N is a plate-like bus bar that is wider than the thickness.

On the opposite side of the P radiator plate _{R P} of the insulating substrate 40, U-phase module 30 U, each three-phase V-phase modules 30V and W-phase module 30 W, the first transistor Tr1 and the first diode via a solder 80 D1 is joined. The first transistor Tr1 is, for example, a power MOS transistor or an IGBT (insulated gate bipolar transistor), and the first diode D1 functions as a freewheeling diode. The surface opposite to the P radiator plate R _P of the first transistor Tr1 and the first diode D1, the spacer 60 via the solder 80 respectively are joined.

As shown in FIG. 6 for each of the three phases of the U-phase module 30U, the V-phase module 30V, and the W-phase module 30W on the surface of the spacer 60 opposite to the first transistor Tr1 or the first diode D1, respectively. upper phase output terminal plates U _P are joined such. Upper phase output terminal plates U _P is bent tip from the bonded position in the spacer 60, a distance from the insulating substrate top surface 40t and P radiating plate R _P is protruded from the sealing resin 20 at the same position. A control terminal 50 is bonded to the first transistor Tr1 via a bonding wire 70. In this way, the upper phase UP of the U phase, the V phase, and the W phase is formed on the upper surface 40t of the insulating substrate.

Similarly, the opposite surface of the insulating substrate 40 of N radiating plate _{R N,} the solder 80, the second transistor Tr2, a second diode D2, the spacer 60, the lower phase output terminal plates UN are successively joined. In this way, the lower phase BP of the U phase, the V phase, and the W phase is formed on the lower surface 40b of the insulating substrate. For each of the U phase, V phase and W phase, the first transistor Tr1 and the first diode D1 are used for the upper phase UP as shown in FIG. 7, and the second transistor Tr2 and the second diode 2 are used for the lower phase. Inverter circuit is formed.

As shown in FIGS. 2 and 7, in the power module 10, in the region Z <b> 1, the P terminal plate P and the N terminal plate N are in parallel directions in which the directions of currents are opposite to each other with the insulating substrate 40 interposed therebetween. It is arranged to be. In the region Z2, the orientation of the P terminal plate P and the upper phase output terminal plates U _P and its current is arranged to be opposite in a direction parallel to each other. In the region Z3, and the N terminal plate N and the lower-phase output terminal plates U _N direction of the current is arranged to be opposite in a direction parallel to each other. As shown in FIG. 3, in the region Z4, is sandwiched therebetween arranged as P radiator plate R _P and N radiating plate R _N and the direction of the current is opposite the direction parallel to each other between the insulating substrate 40 Yes. P terminal plate P, a N terminal plate N, the upper-phase output terminal plates U _P, is between the lower phase output terminal plates U _N, insulating paper and the upper phase output terminal plates U _P, the lower phase output terminal plates U _N It is insulated by placing an insulator such as a laminate.

Hereinafter, the manufacturing process of the power module 10 of this embodiment is demonstrated. In the following description, a process of forming the upper phase UP on the insulating substrate upper surface 40t will be described. As shown in the flowchart of FIG. 8, the cross-sectional view taken along line AA in FIG. 9, and the cross-sectional view taken along line BB in FIG. 10, solder _P , first transistor Tr 1, The first diode D1 and the spacer 60 are sequentially joined, and the first reflow process is performed (S11). 8 and 11, the first transistor Tr1 and the control terminal 50 are wire-bonded by the bonding wire 70 (S12).

As shown in the cross-sectional view taken along the line AA in FIGS. 8 and 12 and the cross-sectional view taken along the line BB in FIG. upper phase output terminal plates U _P is a lead frame side are joined, the second reflow process is performed (S13). After this step, at the end of the sealing resin 20 by molding after the upper phase output terminal plates U _P and the P radiating plate R _P is the distance from the insulating substrate top surface 40t from the sealing resin 20 at the same position It is arranged to protrude. As shown in FIG. 8, a primer coating process is performed to improve the adhesion between the sealing resin 20 and each component (S14).

As shown in the cross-sectional view taken along the line AA in FIGS. 8 and 14, the cross-sectional view taken along the line BB in FIG. 15, and the plan view in FIG. 16, the sealing with the sealing resin 20 that has been molded is performed. (S15). In the present embodiment, at the end of the sealing resin 20, the upper-phase output terminal plates U _P and the P radiating plate R _P is arranged so that a distance from the insulating substrate top surface 40t protrudes from the sealing resin 20 at the same position Has been. Therefore, a line apart the distance from the insulating substrate top surface 40t by the parting line of the molding, by matching the parting line between the upper phase output terminal plates U _P and P radiating plate R _P, easily Molding can be performed.

As shown in the plan views of FIGS. 8 and 17, the cross-sectional view taken along the line AA in FIG. 18, and the cross-sectional view taken along the line BB in FIG. and the terminal JT _P is joined (S16). The step of forming the lower phase BP on the insulating substrate lower surface 40b can be performed in the same manner as described above.

According to this embodiment, the first transistor Tr1, which is joined to the upper phase output terminal plates U _P P-terminal plate P and the low potential side of the high potential side, the low potential side of the N terminal plate N and the high potential side in the power module 10 and a second transistor Tr2, which is joined to the lower-phase output terminal plates U _N of parallel directions opposite to each other in the current flowing direction and N terminal plate N of the current flowing through the P terminal plate P such become so the P terminal plate P and N terminal plate N direction are arranged in parallel, the opposite of the parallel direction of the current flowing direction and the upper phase output terminal plates U _P of the current flowing through the P terminal plate P such that the direction, the upper-phase output terminal plates U _P is disposed so as to sandwich the P terminal plate P between the N terminal plate N and the upper phase output terminal plates U _P, the current flowing through the N terminal plate N parallel towards the direction opposite to each other in the current flowing direction and the lower-phase output terminal plates U _N And so that, are arranged so as to sandwich the N terminal plate N between the lower phase output terminal plates U _N is P terminal plate P and the lower-phase output terminal plates U _N.

Therefore, as shown in FIGS. 2, 7 and 20, the current flowing through the P terminal plate P and N terminal plate P in the region Z1, flows the upper phase output terminal plates U _P and P terminal plate in the region Z2 current, and the magnetic field are canceled out by each other three positions by a current flowing through the N terminal plate N and the lower-phase output terminal plates U _N in the region Z3, it is possible to improve the effect of reducing the inductance. Furthermore, in the present embodiment, in the region Z4, is sandwiched therebetween arranged as P radiator plate R _P and N radiating plate R _N and the direction of the current is opposite the direction parallel to each other between the insulating substrate 40 Therefore, also in the region Z4, the effect of reducing the inductance can be improved. In the regions Z1 to Z4, by reducing the inductance, the surge voltage at the time of switching can be further suppressed, operation at a higher frequency can be performed, and the peripheral components such as capacitors and reactors can be downsized and reduced. The effect on cost can be expected.

  In the present embodiment, the insulating substrate 40 further includes an insulating substrate upper surface 40t and an insulating substrate 40b. The P terminal plate P and the N terminal plate P each have a plate shape whose width is larger than the thickness, and the P terminal plate N Is arranged on the upper surface 40t of the insulating substrate, the N terminal plate N is arranged on the lower surface 40b of the insulating substrate, and the P terminal plate P and the N terminal plate N are laminated so as to sandwich the insulating substrate 40 therebetween. For this reason, a current flows in the opposite direction to the wide plate-like P terminal plate P and N terminal plate N that are stacked with the insulating substrate 40 interposed therebetween, and the effect of reducing the inductance can be further improved. it can.

  Further, in the present embodiment, since the upper phase UP of the first transistor Tr1 and the lower phase BP of the second transistor Tr2 are stacked with the insulating substrate 40 interposed therebetween, the projected area onto the insulating substrate 40 is reduced. The power module can be reduced in size.

In this embodiment, the first transistor Tr1 for three phases of the U-phase module 30U, the V-phase module 30V, and the W-phase module 30W is disposed on the insulating substrate upper surface 40t, and the U-phase modules 30U, V are disposed on the insulating substrate lower surface 40b. The second transistors Tr2 for the three phases of the phase module 30V and the W phase module 30W are arranged, and the first transistors Tr1 for the three phases for the U phase, the V phase, and the W phase are for the U phase and the V phase, respectively. and is bonded to the P terminal plate P in common with the upper-phase output terminal plates U _P for three phases for W-phase, U-phase, the second switching elements of three phases for the V-phase and W-phase, respectively U-phase, are joined to the N terminal plate N common to the lower-phase output terminal plates U _N for three phases for V-phase and W-phase. Therefore, in the PN wiring of the P terminal board P and the N terminal board N for three phases, it can be arranged in parallel so that the directions of the currents are opposite to each other with a simple circuit wiring pattern (PN parallel running). The inductance of the three-phase PN wiring can be efficiently reduced.

  In addition, this invention is not limited to the said embodiment, A various deformation | transformation aspect is possible.

DESCRIPTION OF SYMBOLS 10 ... Power module, 20 ... Sealing resin, 30U ... U phase module, 30V ... V phase module, 30W ... W phase module, 40 ... Insulating substrate, 40t ... Insulating substrate upper surface, 40b ... Insulating substrate lower surface, 50 ... Control terminal , 60 ... spacer 70 ... bonding wire, 80 ... solder, _{R P} ... P radiating plate, _{R N} ... N radiating plate, JT _P ... P terminal board connecting terminal, JT _N ... N terminal plate connecting terminal, P ... P terminal plate, N ... N terminal plate, U _P ... upper phase output terminal plate, U _N ... lower phase output terminal plate, U ... output terminal plate, Tr1 ... first transistor, Tr2 ... second transistor, D1 ... first Diode, D2 ... second diode, UP ... upper phase, BP ... lower phase, Z1-Z5, z1-z2 ... region.

Claims (4)

A first switching element having a P terminal on the high potential side and a first output terminal on the lower potential side than the P terminal;
A second switching element having an N terminal on a low potential side and a second output terminal on a higher potential side than the N terminal;
With
The P terminal and the N terminal are arranged in parallel so that the direction of the current flowing through the P terminal and the direction of the current flowing through the N terminal are parallel to each other.
The first output terminal is between the N terminal and the first output terminal so that the direction of the current flowing through the P terminal and the direction of the current flowing through the first output terminal are parallel to each other. Arranged to sandwich the P terminal,
The second output terminal is between the P terminal and the second output terminal so that the direction of the current flowing through the N terminal and the direction of the current flowing through the second output terminal are parallel to each other. A power module disposed so as to sandwich the N terminal therebetween. An insulating substrate having a first surface and a second surface;
The P terminal and the N terminal each have a plate shape whose width is larger than the thickness,
The P terminal is disposed on the first surface of the insulating substrate;
The N terminal is disposed on the second surface of the insulating substrate;
The power module according to claim 1, wherein the P terminal and the N terminal are stacked so as to sandwich the insulating substrate therebetween. The first switching element is disposed on the first surface of the insulating substrate;
The power module according to claim 2, wherein the second switching element is disposed on the second surface of the insulating substrate. The first switching element for U-phase disposed on the first surface of the insulating substrate, the first switching element for V-phase disposed on the first surface of the insulating substrate, and the first switching element for the insulating substrate. The first switching element for the W phase disposed on one surface;
The second switching element for U-phase disposed on the second surface of the insulating substrate, the second switching element for V-phase disposed on the second surface of the insulating substrate, and the second switching element for the insulating substrate. The second switching element for W phase disposed on two surfaces;
With
The first switching element for the U phase, the first switching element for the V phase, and the first switching element for the W phase are the first output terminal for the U phase, the V phase The first output terminal and the first output terminal for the W phase, and the common P terminal,
The second switching element for the U phase, the second switching element for the V phase, and the second switching element for the W phase are the second output terminal for the U phase, the second phase switching element for the V phase, 4. The power module according to claim 3, further comprising the second output terminal, the second output terminal for the W phase, and the common N terminal. 5.

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