JP5123162B2 - Power semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention has a circuit in which an output line to a load is drawn from a connection point of two series-connected semiconductor switching elements in which power lines from a power source are connected to both ends, and both the semiconductor switching elements are complementarily opened and closed The present invention relates to a power semiconductor device that converts the power of the power source by being controlled and outputs the converted power to the load, and particularly relates to a device having a wiring structure suitable for high power use.

Conventionally, in order to solve various problems such as power loss, heat generation, breakdown, malfunction due to noise, etc., which increase as a larger current is required to be converted at a higher frequency in power semiconductor devices, the wiring inductance is reduced. Is a solution (Patent Documents 1 to 5 etc.).
As semiconductor switching elements, transistors such as MOSFETs and IGBTs are mainly used. As a semiconductor device for high power use, there is a three-phase motor drive circuit such as an electric hawk lift. It is required to convert a large current at a high frequency (10 kHz or more for a hawk lift) to increase the output of electric motors such as vehicles and lifts and to take measures against noise.

Patent Documents 1 to 3 describe circuits of both series semiconductor switching elements in which an output line is connected to each other connection point and a power line is connected to both ends.
In Patent Document 1, a circuit diagram is shown in FIG. 10 and an external view of the apparatus is shown in FIGS. As shown in FIG. 11 of Patent Document 1, in the drive circuit of the three-phase motor, three sets of series semiconductor switching element circuits are configured corresponding to the u-phase, v-phase, and w-phase.
In the devices described in Patent Literatures 1 to 3, the high potential side of the power line is P, the low potential side is N, and the output line is U. The flat electrode lead-out terminals corresponding to these three electrodes (the electrodes are led out to the outside) Are arranged in parallel.

In the inventions described in Patent Documents 1 to 3, the electrode lead-out terminals of P, U, and N are formed in a wide flat plate shape, so that self-inductance is reduced and the electrode lead-out terminals through which current flows in the opposite direction are connected to each other. It is understood that the mutual inductance is reduced by the canceling action by being arranged close to the interval, thereby reducing the wiring inductance.
As disclosed in Patent Document 6, the present applicant also has three electrode lead terminals (4, 5, 6) of P, N, and U for the purpose of reducing wiring inductance based on the same theory. Over the circuit boards (2H, 2L) on which the switching elements are mounted, they are laminated at intervals through insulating materials (9, 10), and are formed in a flat plate shape parallel to the circuit board at least in the laminated parts. An application for a power semiconductor device adopting the following structure was filed.

That is, in the invention described in Patent Document 6, a P electrode lead terminal, an N electrode lead terminal, a U electrode lead terminal, an insulating material disposed between the P electrode lead terminal and the N electrode lead terminal, and the N electrode A five-layer structure composed of an insulating material disposed between the lead terminal and the U electrode lead terminal was employed. In order to obtain a mutual inductance canceling effect, the thickness of the insulating material becomes as thin as 0.5 mm, for example. As a method for manufacturing this five-layer structure, as described in paragraph 0064 of Patent Document 6, a method of laminating after applying a resin or applying a resin film to the surface of the electrode lead-out terminal in advance, and paragraph 6 of Patent Document 6 The method of filling the gap between the electrode lead-out terminals described in 0065 with a resin was presented.
Japanese Patent No. 3053298 JP 2001-332688 A JP 2004-214452 A Japanese Patent Laid-Open No. 11-177021 JP-A-11-177018 JP 2006-210500 A

As described in Patent Document 6, when the gap between the electrode lead-out terminals is narrow, according to the method of filling the gap between the electrode lead-out terminals with a resin, a resin-unfilled gap may be left between the terminals. This is not preferable. The present inventors have studied a method of laminating and sandwiching an insulating resin sheet between the terminals, which has few such problems and is desired to pursue manufacturing accuracy and manufacturing efficiency, but it has become a problem to be described below.
First, it is necessary to secure the reliability of the positional accuracy of the electrode lead-out terminal and the control terminal, and to achieve desired performance such as reliable connection to a circuit board on which the semiconductor switching element is mounted and reduction of wiring inductance. Moreover, it is necessary to ensure the reliability of the positional accuracy of the insulating resin sheet disposed between the electrode lead-out terminals and to ensure the insulation reliability.

According to the study by the present inventors, as shown in FIG. 18, between the P electrode lead terminal 4, the N electrode lead terminal 5, the U electrode lead terminal 6, and the P electrode lead terminal and the N electrode lead terminal. A five-layer structure composed of the insulating resin sheet 9 to be disposed and the insulating resin sheet 10 disposed between the N electrode lead terminal and the U electrode lead terminal is closed with molds 41 to 44 and filled with resin. The following problems occurred when molding the resin case.
As shown in FIG. 18 (a), a structure in which the end face position of the edge of the P electrode lead-out terminal 4 and the end face position of the edge of the N electrode lead-out terminal 5 coincide, the end face position of the edge of the N electrode lead-out terminal 5 and the U electrode There is a structure in which the end face position of the edge of the lead-out terminal 6 matches. Further, as shown in FIG. 18 (b), there is a structure in which the end face position of the edge of the P electrode lead terminal 4, the end face position of the edge of the N electrode lead terminal 5, and the end face position of the edge of the U electrode lead terminal 6 are coincident. is there.
In such a structure in which the end face positions of the edges of the adjacent terminals coincide with each other, in order to sufficiently ensure the creeping insulation distance between the terminals along the edge of the insulating resin sheet 9 or 10, the insulating resin sheet 9, It is necessary to project 10 edge portions outward from the end face position of the edge of the terminal.
However, in this case, as shown in FIG. 18, when the mold is closed, the mold 41, 42, 43 or 44 interferes with the edge of the insulating resin sheet 9 or 10 protruding from the terminal 4, 5 or 6, thereby insulating the mold. The edge of the resin sheet 9 or 10 may be damaged or broken, resulting in a problem that the manufacturing yield is lowered. Such a problem cannot be eliminated only by improving the positional accuracy of the terminals 4, 5, 6 and the insulating resin sheets 9, 10.

  The present invention has been made in view of the above problems in the prior art, and includes a power having a five-layer structure including three electrode lead-out terminals and two insulating resin sheets disposed therebetween. An object of the present invention is to improve the manufacturing yield and the positional accuracy of the conductor member and the insulating member while ensuring a sufficient creeping insulation distance along the edge of the insulating resin sheet between the terminals in the semiconductor device. .

The invention described in claim 1 for solving the above-described problems has a circuit in which an output line to a load is drawn from a connection point between two series-connected semiconductor switching elements in which power lines from a power source are connected to both ends. The power semiconductor device that converts the power of the power source and outputs the power to the load by complementary open / close control of the semiconductor switching elements,
With the high potential side of the power line as P, the low potential side as N, and the output line as U, there are three electrode lead-out terminals corresponding to the three electrodes P, N, and U, and two insulating resin sheets. And
The three electrode lead-out terminals are stacked above the circuit board on which the semiconductor switching element is mounted via the insulating resin sheet, and are formed in a flat plate shape parallel to the circuit board at least in the stacked portion. Become
In the laminated portion, the other electrode lead-out terminal adjacent to the insulating resin sheet is arranged such that the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is located inside the end face position of the edge of the insulating resin sheet. The end face position of the edge of the insulating resin sheet is aligned with the end face position of the edge of the insulating resin sheet or arranged outside the position ,
A laminated hole is formed by laminating holes through each of the three electrode lead-out terminals and the two insulating resin sheets in the laminated portion,
In the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet. The end face position of the inner edge of the electrode lead-out terminal coincides with the end face position of the inner edge of the insulating resin sheet or is arranged inside the position,
1. The power semiconductor device according to claim 1, wherein each of the three electrode lead-out terminals constituting one of the stacked holes is formed to have a size relationship that gradually increases along a certain stacking direction. .

The invention according to claim 2 has a circuit in which an output line to a load is drawn from a mutual connection point of both semiconductor switching elements connected in series, to which power lines from a power source are connected at both ends. A power semiconductor device that converts the power of the power source and outputs it to the load by complementary opening and closing control,
With the high potential side of the power line as P, the low potential side as N, and the output line as U, there are three electrode lead-out terminals corresponding to the three electrodes P, N, and U, and two insulating resin sheets. And
The three electrode lead-out terminals are stacked above the circuit board on which the semiconductor switching element is mounted via the insulating resin sheet, and are formed in a flat plate shape parallel to the circuit board at least in the stacked portion. Become
In the laminated portion, the other electrode lead-out terminal adjacent to the insulating resin sheet is arranged such that the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is located inside the end face position of the edge of the insulating resin sheet. The end face position of the edge of the insulating resin sheet is aligned with the end face position of the edge of the insulating resin sheet or arranged outside the position,
A laminated hole is formed by laminating holes through each of the three electrode lead-out terminals and the two insulating resin sheets in the laminated portion,
In the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet. The end face position of the inner edge of the electrode lead-out terminal coincides with the end face position of the inner edge of the insulating resin sheet or is arranged inside the position,
A resin case that holds and retains a part of the three electrode lead-out terminals in a frame shape surrounding the circuit board;
The control electrode lead-out terminal for controlling the switching of the semiconductor switching element has a structure that intersects the three electrode lead-out terminals above the stacked portion,
The resin part continuously extended from the resin case is formed so as to hold the control electrode lead-out terminal above the laminated part and to be attached to the inner surface of the one laminated hole. it is a semiconductor device that power.

The invention according to claim 3 has a circuit in which an output line to the load is drawn from a connection point between the two semiconductor switching elements connected in series, to which power lines from the power supply are connected at both ends. A power semiconductor device that converts the power of the power source and outputs it to the load by complementary opening and closing control,
With the high potential side of the power line as P, the low potential side as N, and the output line as U, there are three electrode lead-out terminals corresponding to the three electrodes P, N, and U, and two insulating resin sheets. And
The three electrode lead-out terminals are stacked above the circuit board on which the semiconductor switching element is mounted via the insulating resin sheet, and are formed in a flat plate shape parallel to the circuit board at least in the stacked portion. Become
In the laminated portion, the other electrode lead-out terminal adjacent to the insulating resin sheet is arranged such that the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is located inside the end face position of the edge of the insulating resin sheet. The end face position of the edge of the insulating resin sheet is aligned with the end face position of the edge of the insulating resin sheet or arranged outside the position,
A laminated hole is formed by laminating holes through each of the three electrode lead-out terminals and the two insulating resin sheets in the laminated portion,
In the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet. An end surface position of the inner edge of the electrode lead-out terminal is the same as the end surface position of the inner edge of the insulating resin sheet, or a manufacturing method of a power semiconductor device arranged inside the position ,
Laminating the three electrode lead-out terminals via the insulating resin sheet to form a five-layer structure comprising three electrode lead-out terminals and two insulating resin sheets;
Inserting a positioning pin into two or more of the laminated holes configured in the five-layer structure to position a relative position between layers;
Fixing the positioning pin to a mold; and
Storing the five-layer structure positioned and fixed by the positioning pin in the mold and closing the mold;
A method of manufacturing a power semiconductor device comprising: filling a mold in a closed mold and molding a resin case attached to a part of the three electrode lead-out terminals.

Invention of Claim 4 is a manufacturing method of the semiconductor device for electric power of Claim 1 , Comprising:
Laminating the three electrode lead-out terminals via the insulating resin sheet to form a five-layer structure comprising three electrode lead-out terminals and two insulating resin sheets;
In the two or more laminated holes configured in the five-layer structure, a three-stage positioning pin having an outer diameter that fits into the hole of each electrode lead-out terminal, the electrode lead-out terminal side having the largest hole Inserting the relative position between the layers,
Fixing the positioning pin to a mold; and
Storing the five-layer structure positioned and fixed by the positioning pin in the mold and closing the mold;
A method of manufacturing a power semiconductor device comprising: filling a mold in a closed mold and molding a resin case attached to a part of the three electrode lead-out terminals.

Invention of Claim 5 is a manufacturing method of the semiconductor device for electric power of Claim 2 , Comprising:
Laminating the three electrode lead-out terminals via the insulating resin sheet to form a five-layer structure comprising three electrode lead-out terminals and two insulating resin sheets;
The laminated layer in which positioning pins are inserted into two or more laminated holes configured in the five-layer structure to position relative positions between the layers, and another positioning pin is disposed below the control electrode lead-out terminal The control electrode lead-out terminal is supported by inserting the hole into the hole from below and projecting the upper end portion upward from the laminated hole to contact the control electrode lead-out terminal, and the control electrode for the five-layer structure Positioning the relative position of the lead terminal;
Fixing the positioning pin to a mold; and
Storing the five-layer structure positioned and fixed by the positioning pin and the control electrode lead-out terminal in the mold, and closing the mold;
A resin case that is filled with resin in the mold that is closed and adheres to a part of the three electrode lead-out terminals and the control electrode lead-out terminal, and is continuously formed extending from the resin case, The control electrode lead-out terminal is held above the stack portion, and enters the gap between the other positioning pin below the control electrode lead-out terminal and the stack hole into which it is inserted, and adheres to the inner surface of the stack hole. And a step of molding a resin part.

According to the first aspect of the present invention, in the laminated portion of the five-layer structure composed of three electrode lead terminals and two insulating resin sheets, the edge of one electrode lead terminal adjacent to the insulating resin sheet The end surface position is arranged inside the end surface position of the edge of the insulating resin sheet, and the end surface position of the edge of the other electrode lead-out terminal adjacent to the insulating resin sheet matches or matches the end surface position of the edge of the insulating resin sheet. The creeping insulation distance from the edge of one electrode lead-out terminal to the other electrode lead-out terminal along the edge of the insulating resin sheet is ensured to be longer than the thickness of the insulating resin sheet. There is an effect that a sufficient distance can be secured.
Further, according to the present invention, since the edge of the insulating resin sheet does not protrude and extends along the electrode lead-out terminal on one side, the mold interferes with the edge of the insulating resin sheet when the mold is closed. However, this edge portion is supported by the electrode lead-out terminal on one side, and there is an effect that damage and breakage of this edge portion can be suppressed, and thus the manufacturing yield can be improved.

According to the first or third or fourth aspect of the present invention, the relative position between the layers of the five-layer structure is obtained by inserting the positioning pin into the laminated hole formed in the five-layer structure and fixing the pin to the mold. The positional accuracy with respect to the molding die (and hence the resin portion) can be improved, and the rate of occurrence of interference of the die with the edge of the insulating resin sheet when the die is closed can be suppressed.

According to the second or fifth aspect of the present invention, the three electrode lead-out terminals, the two insulating resin sheets, and the control electrode terminals that intersect the sky are continuously connected to the resin case. Since these parts are integrally connected and fixed by the resin part, the position of each part can be accurately fixed and maintained by a strong structure in which these parts are connected and fixed via the resin part. The creeping insulation distance from the edge of the insulating resin sheet to the other electrode lead-out terminal along the edge of the insulating resin sheet and the distance between the electrode lead-out terminal and the control electrode lead-out terminal can be ensured and maintained with high accuracy. There is. Therefore, the subsequent assembly process can be performed with high accuracy.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.
FIG. 1 is a cross-sectional view of the power semiconductor device of this embodiment. FIG. 2 shows a plan view of an electrode lead-out terminal insert type case applied to the power semiconductor device of this embodiment, and FIG. 3 shows a perspective view thereof. FIG. 4 is a plan view of the P electrode lead-out terminal. FIG. 5 is a plan view of the N electrode lead-out terminal. FIG. 6 is a plan view of the U electrode lead-out terminal. FIG. 7 is a plan view of an insulating resin sheet disposed between PN. FIG. 8 is a plan view of an insulating resin sheet disposed between N-U. FIG. 9 is an exploded perspective view of the three-electrode lead terminals P, N, and U and the insulating resin sheet. FIG. 10 is a plan view of a circuit board (without bonding wires). FIG. 11 is an equivalent circuit diagram of the power semiconductor device of the present embodiment. FIG. 12 is a circuit diagram of a drive circuit for a three-phase motor.

The power semiconductor device of the present embodiment has a configuration common to the power semiconductor device described in Patent Document 6 as described below.
As shown in FIG. 1, the power semiconductor device of the present embodiment is configured by assembling a heat sink 1, two circuit boards 2H and 2L (shown in a plan view in FIG. 10), and a case 3. The circuit shown in FIG.

  As shown in FIG. 2, the case 3 holds the electrode lead-out terminals 4 to 6 and the control electrode lead-out terminals 7H, 7L, 8H, and 8L of the P, N, and U electrodes that constitute the laminated portion 11. The electrode lead-out terminals 4 to 6 and the control electrode lead-out terminals 7 and 8 of the P, N, and U electrodes are produced by press-molding a metal plate such as a copper plate, and are subjected to nickel plating or the like. Case 3 is a resin molded product.

As shown in FIGS. 4 and 9, the P electrode lead-out terminal 4 is divided into a parallel plate portion 4a, a vertical plate portion 4b, an outer end connection portion 4c, and two inner end connection portions 4d and 4e. be able to.
As shown in FIGS. 5 and 9, the N electrode lead-out terminal 5 is divided into a parallel plate portion 5a, a vertical plate portion 5b, an outer end connection portion 5c, and two inner end connection portions 5d and 5e. be able to.
As shown in FIGS. 6 and 9, the U electrode lead-out terminal 6 is divided into a parallel plate portion 6a, a vertical plate portion 6b, an outer end connection portion 6c, and four inner end connection portions 6d to 6g. be able to.
Each parallel flat plate part 4a, 5a, 6a is a flat plate-like part arrange | positioned in parallel with the circuit boards 2H and 2L.
The vertical flat plate portions 4b, 5b, 6b are arranged perpendicular to the circuit boards 2H, 2L. As shown in FIG. 9, the end portions of the parallel flat plate portions 4a, 5a, 6a and the outer end connection portions 4c, 5c, It is a flat part which connects the edge part of 6c.
An external wiring from the high potential side of the power source is connected to the outer end connection portion 4c of the P electrode. The external connection from the low potential side of the power source is connected to the outer end connection portion 5c of the N electrode. An output destination device such as a three-phase motor is connected to the outer end connection portion 6c of the U electrode.

The three outer end connection portions 4 c, 5 c, 6 c are arranged on the upper end surface of the case 3 at the same height. The parallel flat plate portions 4a, 5a, 6a are stacked at intervals in the order of P, N, U from the side closer to the circuit boards 2H, 2L, and the intervals are held by the insulating resin sheets 9, 10. Therefore, the height difference between the outer end connection portions 4c, 5c, and 6c and the parallel plate portions 4a, 5a, and 6a is large in the order of P, N, and U.
As shown in FIG. 9, the insulating resin sheets 9 and 10 are formed with a uniform thickness.

  The tips of the parallel plate portions 4a, 5a, 6a are arranged at the same position. Therefore, the length of the parallel plate portion is longer in the order of P, N, and U. The three layers P, N, and U are stacked on almost the entire parallel plate portion 5a of the N electrode. A range corresponding to the thickness of the insulating resin sheet 10 adjacent to the vertical flat plate portion 5 b of the parallel flat plate portion 5 a is excluded from the laminated portion 11.

  Bolt insertion holes 4k, 5k, and 6k are formed in the outer end connection portions 4c, 5c, and 6c at the same time along the edge of the case 3 during press forming. Three nuts communicating with these bolt insertion holes 4k, 5k, 6k, one by one, are embedded in the case 3. These bolt insertion holes 4k, 5k, and 6k and the three nuts are structures for crimping and connecting ring-shaped terminals provided at the end portions of the external wiring to the outer end connection portions 4c, 5c, and 6c by bolting. .

Each of the inner end connection portions 4d, 4e, 5d, 5e, 6d to 6g has a protruding shape that protrudes in the same plane from the side edge of the laminated portion 11, that is, the side edge of each of the parallel plate portions 4a, 5a, 6a. The part is formed by being bent to the circuit board 2H, 2L side in the middle and further bent to the inner side after that.
For the four inner end connection portions 4d, 4e, 6d, and 6e arranged on one side of the stacked portion 11, from the front end side, the P electrode front end side inner end connection portion 4d, the U electrode front end side inner end connection portion 6d, The base end side inner end connection portion 6e of the U electrode and the base end side inner end connection portion 4e of the P electrode are arranged in this order.
Regarding the four inner end connection portions 5d, 5e, 6f, and 6g arranged on the other side of the laminated portion 11, from the front end side, the front end side inner end connection portion 6f of the U electrode and the front end side inner end connection portion of the N electrode 5d, the base end side inner end connection portion 5e of the N electrode, and the base end side inner end connection portion 6g of the U electrode are arranged in this order.
The front end side end surfaces of the inner end connection portions 4d and 6f on the most front end side coincide with the front ends of the parallel plate portions 4a and 6a, that is, the front end of the stacked portion 11.
The four inner end connecting parts 4d, 4e, 6d, 6e on one side are not arranged at equal intervals, and the inner end connecting part 6d and the inner end connecting part 6e are opened relatively widely, so that The connection portions 4d and 6d and the proximal end inner end connection portions 4e and 6e are arranged so as to be unevenly distributed on the distal end side and the proximal end side.
Similarly, the other four inner end connecting portions 5d, 5e, 6f, 6g on the other side are not arranged at equal intervals, and the inner end connecting portion 5d and the inner end connecting portion 5e are opened relatively large. The distal end inner end connecting portions 5d and 6f and the proximal end inner end connecting portions 5e and 6g are arranged so as to be unevenly distributed on the distal end side and the proximal end side.

As shown in FIGS. 2, 4, 9, and the like, the base end portion of the parallel plate portion 4 a of the P electrode lead-out terminal 4 is formed so as to protrude from the base end portion of the laminated portion 11 to the opposite side of the inner end connection portion 4 e. The width is wider than the tip portion having the same width as the stacked portion 11. A vertical flat plate portion 4b is continuously formed at the base end portion of the widened parallel flat plate portion 4a through a right-angle fold with the same width, and an end portion on the opposite side to the inner end connection portion 4e of the vertical flat plate portion 4b. The outer end connection portion 4c is coupled through a fold that is perpendicular to each other. The P electrode lead-out terminals 4 are formed in a cross-sectional crank shape by these two foldings being opposite to each other.
Since the base end portion of the parallel plate portion 4a is widened on the opposite side of the inner end connection portion 4e, the portion protruding from the laminated portion 11 of the parallel plate portion 4a and the inner end connection portion 4e do not interfere with each other, and two inner end connections are made. The part which protrudes from the lamination | stacking part 11 of the parallel plate part 4a can be formed large, keeping the space | interval of the parts 4d and 4e wide. The cross-sectional area of the current path from the laminated portion 11 to the outer end connection portion 4c is increased by the portion of the parallel flat plate portion 4a that protrudes from the laminated portion 11 and the vertical flat plate portion 4b.

  As shown in FIGS. 2, 5, 9, and the like, the parallel plate portion 5 a of the N electrode lead-out terminal 5 is formed with the same width as the stacked portion 11 as a whole. A vertical flat plate portion 5b is continuously formed on the parallel flat plate portion 5a through a right-angle fold with the same width, and an outer end connection portion 5c is connected to a central portion of the vertical flat plate portion 5b through a right-angle fold. . The U-electrode lead-out terminals 5 are formed in a cross-sectional crank shape by these two foldings being in opposite directions.

As shown in FIGS. 2, 6, 9, and the like, the base end portion of the parallel plate portion 6 a of the U electrode lead-out terminal 6 is formed to protrude from the base end portion of the stacked portion 11 to the opposite side of the inner end connection portion 6 g. The width is wider than the tip portion having the same width as the stacked portion 11. A vertical flat plate portion 6b is continuously formed at the base end portion of the widened parallel flat plate portion 6a through a right-angle fold with the same width, and an end portion on the opposite side to the inner end connection portion 6g of the vertical flat plate portion 6b. The outer end connection portion 6c is coupled through a fold that is perpendicular to each other. The U-electrode lead-out terminal 6 is formed in a cross-sectional crank shape by these two foldings being opposite to each other.
Since the parallel flat plate portion 6a is widened on the opposite side of the inner end connection portion 6g, the portion protruding from the laminated portion 11 of the parallel plate portion 6a and the inner end connection portion 6g do not interfere with each other, and the two inner end connection portions 6f, 6g. The part which protrudes from the lamination | stacking part 11 of the parallel plate part 6a can be formed large, taking the space | interval of this wide. The cross-sectional area of the current path from the laminated portion 11 to the outer end connecting portion 6c is increased by the portion of the parallel flat plate portion 6a that protrudes from the laminated portion 11 and the vertical flat plate portion 6b.

As shown in FIG. 10, the two circuit boards 2H and 2L have the same circuit pattern. The circuit board 2H is connected between P-U, and 16 MOSFET elements 12H connected between P-U are mounted. The circuit board 2L is connected between U and N, and 16 MOSFET elements 12L connected between U and N are mounted.
The circuit boards 2H and 2L respectively have an insulating substrate 13 and conductor patterns 14, 15 and 16 on the insulating substrate 13. The conductor pattern 14 is connected to the gate electrode of the MOSFET element 12H (12L), the conductor pattern 15 is connected to the source electrode of the MOSFET element 12H (12L), and the conductor pattern 16 is connected to the drain electrode of the MOSFET element 12H (12L). A source conductor pattern 15 is formed in a ring shape around the gate conductor pattern 14, and a drain conductor pattern 16 is formed in a ring shape around the source conductor pattern 15.
On the conductor pattern 14, 16 gate resistance elements 17H (17L) corresponding to the respective MOSFET elements 12H (12L) are attached.
MOSFET element 12H (12L) has the back surface having the drain electrode bonded to conductor pattern 16. The gate electrode and source electrode of the MOSFET element 12H (12L) are formed on the chip surface, and are connected to the conductor patterns 14 and 15 via bonding wires, respectively.

A connection region of the inner end connection portion is shown by a surrounding broken line in FIG. Inner end connection portions 4d and 4e of the P electrode lead-out terminal 4 are joined to the drain conductor pattern 16 on the circuit board 2H side by soldering.
The two inner end connection portions 6d and 6e of the U electrode lead-out terminal 6 are joined to the source conductor pattern 15 on the circuit board 2H side by soldering.
The control electrode lead-out terminal 7H is joined to the gate conductor pattern 14 on the circuit board 2H side via solder. The control electrode lead-out terminal 8H is joined to the source conductor pattern 15 on the circuit board 2H side by soldering.

The other two inner end connection portions 6f and 6g of the U electrode lead-out terminal 6 are joined to the drain conductor pattern 16 on the circuit board 2L side by soldering.
The inner end connection portions 5d and 5e of the N electrode lead-out terminal 5 are joined to the source conductor pattern 15 on the circuit board 2L side by soldering.
The control electrode lead-out terminal 7L is joined to the source conductor pattern 15 on the circuit board 2L side by soldering. The control electrode lead-out terminal 8L is joined to the gate conductor pattern 14 on the circuit board 2L side by soldering.

  The control electrode lead-out terminals 7H and 8H are installed on the circuit board 2H, and the control electrode lead-out terminals 7L and 8L are provided on the circuit boards 2H and 2L and three-dimensionally intersect with the laminated portion 11. In other words, the power semiconductor device has a structure in which the control electrode lead terminals 7L and 8L intersect the three electrode lead terminals 4 to 6 above the stacked portion 11.

The inner end connection portion of the control electrode lead-out terminal 7H is dropped onto the circuit board 2H through the inner end connection portions 6d and 6e that are spaced apart by a relatively large distance. The inner end connection portions of the control electrode lead terminals 7L and 8L are dropped onto the circuit board 2L through the inner end connection portions 5d and 5e that are separated by a relatively wide distance.
Concave portions 4h, 5h, 6h, 9h, and 10h are formed at the same position on one side edge of the electrode lead terminals 4 to 6 and the insulating resin sheets 9 and 10 that are located above the circuit board 2L. Thus, the inner end connecting portion of the control electrode lead-out terminal 7 </ b> L is avoided so as not to contact the electrode lead-out terminals 4 to 6 and the insulating resin sheets 9 and 10.

Next, different parts of the power semiconductor device of the present embodiment from the power semiconductor device described in Patent Document 6 will be mainly described.
As shown in FIGS. 4 to 9, holes a <b> 1 to a <b> 5 are formed in the electrode lead terminals 4 to 6 and the insulating resin sheets 9 and 10. These holes a1 to a5 are holes that penetrate the electrode lead terminals 4 to 6 and the insulating resin sheets 9 and 10, respectively. By laminating these five holes a1 to a5, a laminated hole a is formed in the laminated portion 11. Another stacked hole b is formed in the stacked portion 11. The laminated hole b is composed of holes b1 to b5. The holes a1 to a5 and the holes b1 to b5 are circular holes. The stacked hole a and the stacked hole b are formed at different positions along the longitudinal direction of the stacked portion 11.

  The holes a1, a3, a5 and the holes b1, b3, b5 of the three electrode lead-out terminals 4-6 gradually increase in size along a certain stacking direction (the stacking direction from bottom to top in this embodiment). It is formed with a relationship. This is because a three-stage positioning pin 30 as shown in FIG. 13 is inserted from above and fitted into the holes a1, a3, a5 (holes b1, b3, b5) for positioning. FIG. 13 is a cross-sectional view of the laminated holes common to the laminated holes a and b.

  Furthermore, the other two laminated holes c and d are formed in the laminated part 11. Each of the two laminated holes c and d is composed of rectangular holes c1 to c5 and holes d1 to d5 provided through the electrode lead terminals 4 to 6 and the insulating resin sheets 9 and 10, respectively. The stacked hole c and the stacked hole d are located at different positions along the width direction of the stacked portion 11 and are disposed below the control electrode lead terminals 7L and 8L.

  FIG. 14 and FIG. 15 show the magnitude relationship between the holes c1, c3, c5 and the holes d1, d3, d5 of the three electrode lead-out terminals 4-6. FIG. 14 is a perspective view of a terminal and a resin portion showing a vertical cross section passing through the laminated holes c and d. FIG. 15 is a cross-sectional view of a terminal and a resin portion depicting a vertical cross section passing through the laminated holes c and d. As shown in FIGS. 14 and 15, the middle hole c3 and the hole d3 are formed to be the smallest, and the upper and lower holes c1 and c5 and the holes d1 and d5 are made larger than that.

FIG. 16 is a perspective view of the U electrode lead-out terminal 6, the control electrode lead-out terminal 7L, and the positioning pins 31 and 32 during resin molding.
At the time of resin molding, positioning pins 31 and 32 are inserted into the laminated holes c and d from below. The positioning pins 31 and 32 have a tapered shape that becomes narrower along the upper end direction. The upper end surfaces of the positioning pins 31 and 32 support the control electrode lead terminals 7L and 8L, and determine the height with respect to the U electrode lead terminal 6.
Terminal holding resin portions 19a and 19b extending from the resin case (outer portion) and continuously formed support the control electrode lead-out terminals. The terminal holding resin portion 19b protrudes from the inner wall of the resin case (outer portion), adheres and joins around the base end portions of the control electrode lead terminals 7H and 8H, and supports them.
The terminal holding resin portion 19a protrudes from the inner wall located in the front end direction of the laminated portion 11, sandwiches and holds the front end portion of the laminated portion 11 up and down, and a portion extending on the laminated portion 11 is a laminated hole. The control electrode lead-out terminals 7L and 8L located above the portion between c and d are adhered and joined to hold them, and they are immersed in the laminated holes c and d to adhere to the inner surfaces of the laminated holes c and d. By joining, the scaffold for supporting the terminals 7L and 8L is solidified, and the interlayer position of the laminated portion 11 is fixed.

The end face positions of the edges of the insulating resin sheets 9 and 10 at the outer edge and inner edge of the laminated portion 11 described above are determined according to the following rules.
That is, for the outer edge, the end surface position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed inside the end surface position of the edge of the insulating resin sheet in the laminated portion, and the other edge adjacent to the insulating resin sheet is disposed. The end face position of the edge of the electrode lead-out terminal coincides with the end face position of the edge of the insulating resin sheet or is disposed outside the position.
FIG. 17 is a schematic cross-sectional view showing a state when the mold is closed. For example, as shown in the left side of FIG. 17A and FIG. 17B, the end surface position of the edge of one electrode lead-out terminal 4 adjacent to the insulating resin sheet 9 is the edge of the insulating resin sheet 9 in the laminated portion 11. The edge surface position of the other electrode lead-out terminal 5 adjacent to the insulating resin sheet is disposed outside (may be coincident with) the edge surface position of the edge of the insulating resin sheet 9. ing. Other parts are also arranged according to the same rules.

In addition, the inner edge of the hole has the same discipline only when the relationship between the outer side and the inner side is reversed. That is, on the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is arranged outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet The end face position of the inner edge of the electrode lead-out terminal coincides with or is located inside the end face position of the inner edge of the insulating resin sheet.
This rule is applied to the laminated holes a, b, c and d. For example, as shown in FIG. 13, the end surface position of the inner edge of one electrode lead-out terminal 6 adjacent to the insulating resin sheet 10 is outside the end surface position of the inner edge of the insulating resin sheet 10 in the inner periphery of the laminated holes a and b. The end surface position of the inner edge of the other electrode lead-out terminal 5 that is disposed and is adjacent to the insulating resin sheet 10 coincides with the end surface position of the inner edge of the insulating resin sheet 10 (may be disposed inside). Other parts are also arranged according to the same rules.

  By arranging the outer edge and inner edge of each layer of the laminated portion 11 in accordance with the above rules, the creeping surface extends from the edge of one electrode lead-out terminal to the other electrode lead-out terminal along the edge of the insulating resin sheets 9 and 10. The insulation distance is secured longer than the thickness of the insulating resin sheets 9 and 10, and the creeping insulation distance can be sufficiently secured. Moreover, since the edge part of the insulating resin sheets 9 and 10 does not protrude and extends along the electrode lead-out terminal on one side, the molds 51 to 54 interfere with the edge part of the insulating resin sheets 9 and 10 when the mold is closed. However, this edge part is supported by the electrode lead-out terminal on one side, and damage and breakage of this edge part can be suppressed, thereby improving the manufacturing yield.

Next, a method for manufacturing the power semiconductor device will be described along a manufacturing procedure.
(Step 1) First, three electrode lead-out terminals 4 to 6 are laminated via insulating resin sheets 9 and 10, and are composed of three electrode lead-out terminals 4 to 6 and two insulating resin sheets 9 and 10. A five-layer structure is formed. The electrode lead-out terminals 4 to 6 and the insulating resin sheets 9 and 10 are respectively manufactured. As a material of the insulating resin sheets 9 and 10, for example, PPS is applied. Since the interlayer position is corrected in the next process, in this process, the electrode lead-out terminals 4 to 6 and the insulating resin sheets 9 and 10 are simply overlapped, and the interlayer is not fixed. Therefore, an adhesive, glue, a heat fusion process, etc. are unnecessary. That is, the layers are held in a relatively slidable state.

(Step 2) With or after the implementation of step 1, positioning pins 30 are inserted into the two laminated holes a and b formed in the five-layer structure to position the relative positions between the layers. At this time, as shown in FIG. 13, the two laminated holes a and b formed in the five-layer structure have a three-stage shape having an outer diameter that fits into the holes of the electrode lead-out terminals 4, 5, and 6. The positioning pin 30 is inserted from the electrode lead-out terminal 6 side having the largest hole to position the relative position between the layers.
On the other hand, as shown in FIG. 16, the other positioning pins 31 and 32 are inserted from below into the laminated holes c and d arranged below the control electrode lead-out terminals 7L and 8L, and the upper ends thereof are laminated holes c and d. The control electrode lead-out terminals 7L, 8L are supported by projecting upward from the control electrodes 7L, 8L, and the relative positions of the control electrode lead-out terminals 7L, 8L with respect to the five-layer structure are positioned. .
In addition, the case where this process 2 is implemented together with the implementation of the above-described process 1 means that the positioning pins 30 are sequentially inserted into the holes a1 to a5 and b1 to b5 of the electrode lead terminals 4 to 6 and the insulating resin sheets 9 and 10, This is a case where the positioning pin 30 is locked while being stacked.
In the case where the positioning pins 30 are sequentially inserted into the stacked holes a and b in the already configured five-layer structure, this step 2 is executed after the step 1 described above.

(Step 3) The positioning pins 30, 31, and 32 are fixed to the mold together with or before or after the implementation of the above steps 1 and 2.
The timing for fixing the positioning pins 30, 31, 32 to the mold may be the same as or before or after the above-described steps 1 and 2.

(Step 4) The five-layer structure positioned and fixed by the positioning pins 30, 31, and 32 and the control electrode lead-out terminals 7L and 8L are placed in a mold and closed.

(Step 5) Resin case (enclosed portion) filled with resin in the mold that is closed and adhered to a part of the three electrode lead terminals 4 to 6 and the control electrode lead terminals 7H, 8H, 7L, 8L The control electrode lead-out terminals 7L and 8L are held in the sky above the laminated portion 11 and are formed below the control electrode lead-out terminals 7L and 8L. A resin portion 19a that enters the gap between the positioning pins 30 and 30 and the laminated holes c and d into which the positioning pins 30 and 30 are inserted and adheres to the inner surfaces of the laminated holes c and d is molded. The resin part 19b is also molded at the same time.

(Step 6) The electrode lead-out terminal insert type case 3 manufactured as described above and the circuit boards 2H and 2L after die bonding and wire bonding are arranged on the heat sink 1 as shown in FIG. The circuit boards 2H and 2L are surrounded by the case 3. The case 3 is fitted to the peripheral edge of the heat sink 1 around the circuit boards 2H and 2L. It is preferable to fix the heat radiating plate 1 and the circuit boards 2H and 2L with a bonding material having good thermal conductivity such as solder. The heat radiating plate 1 and the case 3 are fixed by inserting bolts into holes 20 and 21 provided at four corners and fastening them with bolts and nuts.
The circuit boards 2H and 2L are integrated with the heat sink from the beginning of the formation of an insulating layer such as a ceramic substrate deposited on the heat sink 1 with the heat sink 1 as a base and a conductor pattern layer formed thereon. Things can be used.

(Step 7) The arrangement of the circuit boards 2H and 2L and the case 3 is determined, and each inner end connection portion and the circuit board are soldered. Thereafter, as shown in FIG. 1, a resin lid 22 is placed on the upper end opening of the case 3.
The outer end connection portions of all the electrode lead terminals 4 to 6, 7 H, 8 H, 7 L, 8 L are arranged on the upper end surface of the frame-like case 3. Therefore, the lid 22 can be easily attached and detached without interfering with the electrode lead-out terminals. If the lid 22 is removed, the inside can be easily inspected and repaired. Other devices such as a control circuit board connected to the control electrode lead terminals 7H, 8H, 7L, and 8L can be arranged on the lid 22 or in place of the lid 22.

The power semiconductor device of this embodiment is used in a drive circuit for a three-phase motor as shown in FIG. Three power semiconductor devices of this embodiment are connected in parallel corresponding to three phases of u phase, v phase, and w phase.
Control signal lines from a control circuit (not shown) are connected to control electrode lead terminals 7H, 7L, 8H, and 8L of the power semiconductor device corresponding to each phase, and the MOSFET circuit 12H and the MOSFET element 12L are controlled by the control circuit. Switch alternately. As is well known, power semiconductor devices corresponding to each of the u-phase, v-phase, and w-phase are controlled with phases shifted from each other by 120 °, and a three-phase alternating current whose phase is shifted by 120 ° in the entire circuit of FIG. Current is output to the three-phase motor M, and the three-phase motor M is driven.

  The present invention is not limited to the above embodiment, and the semiconductor switch element may be an IGBT (Insulated Gate Bipolar Transistor) instead of the MOSFET. In the case of an IGBT, an external diode element is required in parallel with the IGBT.

1 is a cross-sectional view of a power semiconductor device according to an embodiment of the present invention. It is a top view of the electrode lead-out terminal insert type case applied to the power semiconductor device according to the embodiment of the present invention. It is a perspective view of the electrode lead-out terminal insert type case applied to the power semiconductor device according to the embodiment of the present invention. It is a top view of the P electrode derivation terminal concerning the embodiment of the present invention. It is a top view of the N electrode derivation terminal concerning the embodiment of the present invention. It is a top view of the U electrode derivation terminal concerning the embodiment of the present invention. It is a top view of the insulating resin sheet arrange | positioned between PN which concerns on this invention embodiment. It is a top view of the insulating resin sheet arrange | positioned between NU which concerns on this invention embodiment. It is a disassembled perspective view of 3 electrode lead-out terminals of P, N, and U and an insulating resin sheet according to an embodiment of the present invention. 1 is a plan view of a circuit board (without bonding wires) according to an embodiment of the present invention. 1 is an equivalent circuit diagram of a power semiconductor device according to an embodiment of the present invention. It is a circuit diagram of the drive circuit of a three-phase motor. 1 is a cross-sectional view of a laminated hole according to an embodiment of the present invention. It is the perspective view of the terminal and resin part which showed the vertical cross section which passes along the laminated hole which concerns on this invention embodiment. It is sectional drawing of the terminal and resin part which drew the vertical cross section which passes along the laminated hole which concerns on this invention embodiment. It is a perspective view of a U electrode lead-out terminal, a control electrode lead-out terminal, and a positioning pin at the time of resin molding according to an embodiment of the present invention. It is a cross-sectional schematic diagram which shows the mode at the time of the mold closing which concerns on this invention embodiment. It is a cross-sectional schematic diagram which shows the mode at the time of the mold closing which concerns on contrast technology.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Heat sink 2H, 2L Circuit board 3 Case 4 P electrode derivation terminal 5 N electrode derivation terminal 6 U electrode derivation terminal 4a, 5a, 6a Parallel flat plate part 4b, 5b, 6b Vertical flat plate part 4c, 5c, 6c Outer end connection part 4d, 4e, 5d, 5e, 6d to 6g Inner end connection portion 7H, 7L, 8H, 8L Control electrode lead-out terminal 9, 10 Insulating resin sheet 11 Laminated portion 12H, 12L MOSFET element 13 Insulating substrate 14 Gate conductor pattern 15 Conductor pattern for source 16 Conductor pattern for drain 17H, 17L Gate resistor 19a Terminal holding resin part 19b Terminal holding resin part 20, 21 hole 22 Lid a, b, c, d Laminated hole 30 Positioning pin 31, 32 Positioning pin

Claims (5)

It has a circuit in which output lines to the load are drawn from the mutual connection points of both series-connected semiconductor switching elements connected to power lines from the power supply at both ends, and both the semiconductor switching elements are complementarily controlled to open and close The power semiconductor device that converts the power of the power source and outputs the power to the load,
With the high potential side of the power line as P, the low potential side as N, and the output line as U, there are three electrode lead-out terminals corresponding to the three electrodes P, N, and U, and two insulating resin sheets. And
The three electrode lead-out terminals are stacked above the circuit board on which the semiconductor switching element is mounted via the insulating resin sheet, and are formed in a flat plate shape parallel to the circuit board at least in the stacked portion. Become
In the laminated portion, the other electrode lead-out terminal adjacent to the insulating resin sheet is arranged such that the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is located inside the end face position of the edge of the insulating resin sheet. The end face position of the edge of the insulating resin sheet is aligned with the end face position of the edge of the insulating resin sheet or arranged outside the position ,
A laminated hole is formed by laminating holes through each of the three electrode lead-out terminals and the two insulating resin sheets in the laminated portion,
In the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet. The end face position of the inner edge of the electrode lead-out terminal coincides with the end face position of the inner edge of the insulating resin sheet or is arranged inside the position,
A power semiconductor device, wherein each hole of the three electrode lead-out terminals constituting one of the stacked holes is formed to have a size relationship that gradually increases along a certain stacking direction . It has a circuit in which output lines to the load are drawn from the mutual connection points of both series-connected semiconductor switching elements connected to power lines from the power supply at both ends, and both the semiconductor switching elements are complementarily controlled to open and close The power semiconductor device that converts the power of the power source and outputs the power to the load,
With the high potential side of the power line as P, the low potential side as N, and the output line as U, there are three electrode lead-out terminals corresponding to the three electrodes P, N, and U, and two insulating resin sheets. And
The three electrode lead-out terminals are stacked above the circuit board on which the semiconductor switching element is mounted via the insulating resin sheet, and are formed in a flat plate shape parallel to the circuit board at least in the stacked portion. Become
In the laminated portion, the other electrode lead-out terminal adjacent to the insulating resin sheet is arranged such that the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is located inside the end face position of the edge of the insulating resin sheet. The end face position of the edge of the insulating resin sheet is aligned with the end face position of the edge of the insulating resin sheet or arranged outside the position,
A laminated hole is formed by laminating holes through each of the three electrode lead-out terminals and the two insulating resin sheets in the laminated portion,
In the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet. The end face position of the inner edge of the electrode lead-out terminal coincides with the end face position of the inner edge of the insulating resin sheet or is arranged inside the position,
A resin case that holds and retains a part of the three electrode lead-out terminals in a frame shape surrounding the circuit board;
The control electrode lead-out terminal for controlling the switching of the semiconductor switching element has a structure that intersects the three electrode lead-out terminals above the stacked portion,
The resin part continuously extended from the resin case is formed so as to hold the control electrode lead-out terminal above the laminated part and to be attached to the inner surface of the one laminated hole. semiconductor device for that power. It has a circuit in which output lines to the load are drawn from the mutual connection points of both series-connected semiconductor switching elements connected to power lines from the power supply at both ends, and both the semiconductor switching elements are complementarily controlled to open and close The power semiconductor device that converts the power of the power source and outputs the power to the load,
With the high potential side of the power line as P, the low potential side as N, and the output line as U, there are three electrode lead-out terminals corresponding to the three electrodes P, N, and U, and two insulating resin sheets. And
The three electrode lead-out terminals are stacked above the circuit board on which the semiconductor switching element is mounted via the insulating resin sheet, and are formed in a flat plate shape parallel to the circuit board at least in the stacked portion. Become
In the laminated portion, the other electrode lead-out terminal adjacent to the insulating resin sheet is arranged such that the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is located inside the end face position of the edge of the insulating resin sheet. The end face position of the edge of the insulating resin sheet is aligned with the end face position of the edge of the insulating resin sheet or arranged outside the position,
A laminated hole is formed by laminating holes through each of the three electrode lead-out terminals and the two insulating resin sheets in the laminated portion,
In the inner periphery of the laminated hole, the end surface position of the inner edge of one electrode lead-out terminal adjacent to the insulating resin sheet is disposed outside the end surface position of the inner edge of the insulating resin sheet, and the other end adjacent to the insulating resin sheet. An end surface position of the inner edge of the electrode lead-out terminal is the same as the end surface position of the inner edge of the insulating resin sheet, or a manufacturing method of a power semiconductor device arranged inside the position ,
Laminating the three electrode lead-out terminals via the insulating resin sheet to form a five-layer structure comprising three electrode lead-out terminals and two insulating resin sheets;
Inserting a positioning pin into two or more of the laminated holes configured in the five-layer structure to position a relative position between layers;
Fixing the positioning pin to a mold; and
Storing the five-layer structure positioned and fixed by the positioning pin in the mold and closing the mold;
A method of manufacturing a power semiconductor device, comprising: filling a mold in a closed mold and molding a resin case attached to a part of the three electrode lead-out terminals. A method of manufacturing a power semiconductor device according to claim 1 ,
Laminating the three electrode lead-out terminals via the insulating resin sheet to form a five-layer structure comprising three electrode lead-out terminals and two insulating resin sheets;
In the two or more laminated holes configured in the five-layer structure, a three-stage positioning pin having an outer diameter that fits into the hole of each electrode lead-out terminal, the electrode lead-out terminal side having the largest hole Inserting the relative position between the layers,
Fixing the positioning pin to a mold; and
Storing the five-layer structure positioned and fixed by the positioning pin in the mold and closing the mold;
A method of manufacturing a power semiconductor device, comprising: filling a mold in a closed mold and molding a resin case attached to a part of the three electrode lead-out terminals. A method of manufacturing a power semiconductor device according to claim 2 ,
Laminating the three electrode lead-out terminals via the insulating resin sheet to form a five-layer structure comprising three electrode lead-out terminals and two insulating resin sheets;
The laminated layer in which positioning pins are inserted into two or more laminated holes configured in the five-layer structure to position relative positions between the layers, and another positioning pin is disposed below the control electrode lead-out terminal The control electrode lead-out terminal is supported by inserting the hole into the hole from below and projecting the upper end portion upward from the laminated hole to contact the control electrode lead-out terminal, and the control electrode for the five-layer structure Positioning the relative position of the lead terminal;
Fixing the positioning pin to a mold; and
Storing the five-layer structure positioned and fixed by the positioning pin and the control electrode lead-out terminal in the mold, and closing the mold;
A resin case that is filled with resin in the mold that is closed and adheres to a part of the three electrode lead-out terminals and the control electrode lead-out terminal, and is continuously formed extending from the resin case, The control electrode lead-out terminal is held above the stack portion, and enters the gap between the other positioning pin below the control electrode lead-out terminal and the stack hole into which it is inserted, and adheres to the inner surface of the stack hole. The manufacturing method of the semiconductor device for electric power provided with the process of shape | molding the resin part.

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